Bodo's WBG Expert Talk

Talk to the experts! Join my virtual roundtable, focused on wide bandgap technology. Our goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles we published in the magazine, giving you the chance to ask questions to the experts out of the industry.

If you are interested in participating as an expert, please plan your article for the magazine. We will then invite you to one of the upcoming rounds. Our aim is to give as many companies as possible this opportunity, as we are sure that a wide variety of contributions is of value to everyone. Different speakers will bring new perspectives and approaches.

My next session will take place on Wednesday, October 9th.
We will discuss SiC from 3:00 to 4:00 pm CEST and GaN from 4:30 to 5:30 pm CEST
Our platform of choice is ZOOM.

Free Registration

Below you will find the articles that will be addressed in my upcoming expert talk. Please feel free to submit your question to the author by using the link in the description. He will then answer your question during the session. All questions will be forwarded to the companies. We will motivate the authors to give you a direct reply in case we received too many submissions and your specific question is unanswered yet.

Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base

Download the Article:
bp_article_2210.pdf

SiC
2024-10-09 3:00

Since the introduction of the first commercial single-crystal SiC wafers in the early 1990’s, no change has been made to their composition, only changing their diameter and reducing their defectivity over time. SmartSiC™ is an engineered substrate based on a new paradigm, combining on a single substrate a high-quality top layer made of single-crystal SiC bonded over a highly-electrically conductive polycrystalline SiC handle wafer. This allows for unprecedented gains in terms of device performance and reliability.

By G. Picun, WBG Business Development Manager, SOITEC; Dr. L. Zumbo, R&D Staff Engineer, STMicroelectronics; Dr. E. Guiot, WBG Product Design Manager, SOITEC; G. Bellocchi, R&D Staff Engineer, STMicroelectronics; A. Guarnera, SiC Power Devices Design Group Manager, STMicroelectronics; S. Rascunà, Advanced Research Senior Manager, STMicroelectronics; A. Imbruglia, Funded Projects Advanced Design Program Manager & Expert, STMicroelectronics; G. Arena, Sr. Director of R&D Technology Development, STMicroelectronics; M. Saggio, R&D Design Director, STMicroelectronics (ask-soitec@bodospower.com)

This article was published in our June 2024 issue.

Design Considerations for a High-Voltage SiC-Based Battery Disconnect Switch

Download the Article:
bp_article_2250.pdf

SiC
2024-10-09 3:00

Electrical systems with DC bus voltages of 400V or greater, powered by single- or three-phase grid power or an energy storage system (ESS), can enhance their reliability and resilience with the benefits offered from solid-state circuit protection. In designing a high-voltage solid-state battery disconnect switch there are several fundamental design decisions to consider.

By Ehab Tarmoom, Senior Technical Staff Applications Engineer - Silicon Carbide Business Unit, Microchip Technology (ask-microchip@bodospower.com)

This article was published in our September 2024 issue.

Sustainable Power Conversion in EVs with Wide-Bandgap Materials and Top-Side Cooling

Download the Article:
bp_article_2199.pdf

SiC
2024-10-09 3:00

The world of global mobility is on the cusp of a remarkable shift. In 2024, global EV sales are expected to soar by about 20 percent as governments and consumers try to mitigate the effects of climate change. By 2030, EVs are forecasted to account for at least two-thirds of global car sales.

By Daniel Makus, Application Director xEV Power Conversion (OBC, HV DC-DC), and Rafael Garcia, System Architect for OBC and DC-DC Applications, both at Infineon Technologies (ask-infineon@bodospower.com)

This article was published in our June 2024 issue.

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Download the Article:
bp_article_2161.pdf

GaN
2024-10-09 4:30

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

By Alejandro Pozo, Ph.D., Senior Applications Engineer, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our February 2024 issue.

GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

Download the Article:
bp_article_2201.pdf

GaN
2024-10-09 4:30

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

By Francesco Musumeci, Application Engineer, Italy Application Center, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our June 2024 issue.

Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

Download the Article:
bp_article_2187.pdf

GaN
2024-10-09 4:30

The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

By Parinda Chantarasereekul, Application Engineer, and Alejandro Pozo Arribas, Senior Application Engineer, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our May 2024 issue.

Enhancing Reliability and Compatibility with Upgraded E-mode GaNFET

Download the Article:
bp_article_2253.pdf

GaN
2024-10-09 4:30

GaNPower International unveils an advanced version of the E-Mode GaNFET (GP65R45T4), featuring a boosted gate turn-on voltage of 4V and an expanded gate driving range of +/-20V. This device incorporates cutting-edge All-GaN-IC technology, enabling a seamless transition from traditional silicon and SiC MOSFETs while ensuring pin-to-pin replacement compatibility.

By Daniel Wan and Simon Li, GaNPower International (ask-ganpower@bodospower.com)

This article was published in our September 2024 issue.