Dear Friends,

For a long time, cost was the main obstacle on the way to the introduction of WBG materials. But there are a number of experts in the industry who can prove that this is no longer necessarily the case!

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Bodo Arlt

Innoscience GaN power devices: e-mode (30V-700V), reliable, mass produced and price competitive with Silicon

Gallium Nitride (GaN) power devices outperform standard Silicon (Si) power devices in both AC-DC and DC-DC applications. They help increase efficiency whilst shrinking entire power systems, which often results in cost savings on the BOM (e.g. smaller passives, smaller or total removal of heat sinks, etc.).

Innoscience, the world’s largest producer of 8-inch GaN-on-Si power devices wafers, has shipped more than 300M devices to date. These devices are being used in numerous applications with different power ranges and voltages.

Join Innoscience at the Bodo’s Power WBG event in Munich on December 12 and 13, 2023, and find out how to take advantage of discrete (InnoGaN®) and integrated (SolidGaN™) Innoscience GaN power devices. At Bodo’s Power WBG event, Dr. Denis Marcon will also present tests and results that demonstrate Innoscience GaN power devices’ endurance, strength and reliability. Dr. Marcon will explain that price-competitive GaN power devices are now available by leveraging the economies of scale, thanks to the company’s large dedicated manufacturing sides, 8-inch GaN-on-Si wafers and high yield.

Follow Innoscience on Linkedin: www.linkedin.com/company/innoscience-technology/