Dear Friends,

These 1200V silicon carbide MOSFETs are designed for high-frequency, high-efficiency power applications, offering low switching and conduction losses. Their low gate charge and resistance enable excellent performance in demanding environments such as charging systems, power supplies, and industrial equipment.

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Bodo Arlt

Littelfuse 1200V SiC MOSFETs are industrial-grade components designed for high-frequency and high-efficiency power applications. They exhibit excellent power cycling characteristics and very fast, low-loss switching behavior, making them ideal for high-speed industrial switch mode power supplies.

These MOSFETs feature extremely low gate charge, output capacitance, and gate resistance, enabling superior high-frequency switching performance. The very low drain-source on-state resistance minimizes energy loss during conduction, while the combination of low gate charge and on-resistance significantly reduces both switching and conduction losses.

Features & Benefits:

• SiC MOSFET Technology with –3/+15. . .18 V gate drive
• High blocking voltage with low on-state resistance
• High-speed switching with low capacitance