Dear Friends,

Electromobility has not yet reached the volumes many of us had hoped for. Still, the potential is enormous, and personally, I remain a strong supporter of these vehicles. Wide Bandgap technology will play a key role in boosting their efficiency.

Find all my magazines from 2006 on in our free archive on bodospower.com. There is no better way to communicate. We all share one world. As a publisher I serve the world: one magazine, on time, every time.

Kind regards,
Bodo Arlt

Maximize High Power Application Efficiency with AOS Gen3 αSiC MOSFETs

Rising power demands in EVs, AI data centers, and renewable energy systems are highlighting the inefficiencies in the power conversion stages. Designers require the latest high-voltage next-generation switches with the optimal combination of performance and reliability. For these applications, traditional leaded, surface mount, and topside cooling packages are required to handle the high-power requirements for air- or water-cooled systems.

Alpha and Omega Semiconductor’s (AOS’) Gen3 1200V αSiC MOSFETs deliver the advanced features critical for enabling new topologies with the necessary efficiency. These Gen3 MOSFETs provide up to 30% improved switching figure-of-merit (FOM) compared to AOS’ previous generation while maintaining low conduction losses at high load conditions. Plus, they are fully AEC-Q101 qualified and have HV-H3TRB capabilities, ensuring that the performance improvements provided do not compromise ruggedness and reliability.

Learn more about the transformative power efficiency AOS Gen3 ααSiC MOSFETs can bring to new electric vehicle and AI designs. Visit our website to explore the full range of benefits and technical specifications.