Dear Friends,

The cascode architecture of these devices allows standard gate drive operation while maintaining cost-effectiveness and compatibility with existing driver designs.

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Bodo Arlt

onsemi EliteSiC™ JFETs solve silicon limits with faster switching, higher efficiency, and standard gate-drive compatibility.

onsemi’s EliteSiC™ Cascode and Combo JFETs address the performance limits of silicon power devices by combining SiC efficiency with easy gate-drive compatibility. Traditional IGBTs and MOSFETs struggle with high switching losses, thermal stress, and limited frequency response.

The EliteSiC JFET architecture enables faster switching, lower R_DS(on), and reliable operation at higher power densities, while using standard 0–12 V gate drivers for seamless Si-to-SiC transition.

Key Highlights:

• Drop-in compatibility with existing Si and IGBT gate drivers
• Lower switching and conduction losses for higher efficiency
• Gate-oxide-free SiC JFET structure for long-term reliability
• Lower capacitance (C_OSS) for faster switching and smaller magnetics
• Available from 650 V to 1700 V in TOLL, D2PAK, and TO-247 packages
• Ideal for EV chargers, solar inverters, energy storage, and industrial converters