Dear Friends,

Wide bandgap semiconductors continue pushing efficiency and power density forward, but the real progress usually becomes visible once those gains remain stable under realistic operating temperatures. Anyone visiting PCIM Europe this year and curious how the latest SiC developments are addressing that challenge may want to stop by Hall 9, Booth 318 for a closer look.

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Kind regards,
Bodo Arlt

ROHM @ PCIM 2026: New booth, new products

ROHM has introduced its 5th Generation SiC MOSFETs, delivering approximately 30% lower on resistance at high temperatures - a major step forward for high efficiency power applications. Designed for demanding use cases such as EV traction inverters, AI servers, and industrial power systems, the new devices enable higher power density, smaller designs, and reduced energy losses. Discover what this latest generation of SiC technology can unlock for next generation mobility and infrastructure.

Visit ROHM at hall 9, booth 318, to learn more about the new 5th Generation SiC MOSFETs and ROHM’s Power Eco Family which in pursuit of carbon neutrality provides ideal solutions for ecosystems that optimize and enhance application performance.

At PCIM 2026 in Nuremberg, you will find ROHM once again in Hall 9 - this time at a new booth location and with a refreshed booth design. We cordially invite you to exchange ideas on SiC and GaN solutions with our experts and explore exciting reference projects, while enjoying a freshly prepared coffee from our barista. Visit hall 9, booth 318!