Dear Friends,

Electric drivetrains have become increasingly effective at exposing every weakness in efficiency, thermal behavior, and long-term reliability. That is precisely why scalable SiC platforms, solid-state battery disconnect concepts, and robust packaging approaches continue attracting so much attention at PCIM Europe.

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Bodo Arlt

Having a positively evolving roadmap combined with the opening of state-of-the-art new 8-inch SiC wafer process fab, Mitsubishi Electric continues to provide innovative SiC-MOSFET power device generations that enable reliable, high-efficiency e-mobility applications.

Further, building on an accumulated track record of powering over 38 million xEVs with its highly reliable devices since 1997, Mitsubishi Electric showcases its next generation of scalable automotive power solutions: the J3-Series Modules & SiC MOSFET Relays. The core-module, J3-T-PM, is a half-bridge that can be configured with either 1300V SiC MOSFET or 750V Si RC-IGBT with various built-in features. The J3-T-PM is further assembled into three-phase inverters in a modular way (J3-HEXA-S & J3-HEXA-L) and integrated to pin-fin baseplates. These solutions support a wide power range from 80kW to over 350kW for both 400V and 800V battery classes. The 1300V SiC MOSFET relays are available in both bidirectional and uni-directional configurations (250A and 350A) while sharing the same footprint as J3-T-PM, provide matching high-efficiency, solid-state solutions for battery disconnect applications.

The latest addition to Mitsubishi Electrics' solutions are automotive grade, 2 in 1 SiC MOSFET OBC modules optimized for high frequency operation, featuring a low inductance, high thermal performance insulated package with >10 mm creepage distance compliant with LV123 (terminal to fin).

Mitsubishi Electric will showcase the J3-Series together with its latest SiC devices generations at booth 409, hall 7. Presentations covering the hot topics “Innovative and long-term stable SiC MOSFET power device solutions for e-mobility” at the E-Mobility & Energy Storage Stage and "WBG Reliability: Comparative Study of Dynamic Gate Stress Effects on SiC MOSFETs" will be given during the PCIM conference.

Find a preview of all power semiconductor innovations from Mitsubishi Electric at PCIM Expo and our related conference contributions here at a glance.