Dear Friends,

Gallium nitride devices have demonstrated what they are capable of in terms of switching speed and efficiency. Realizing that performance in a practical converter, however, depends just as much on the gate drive, layout, and overall system design as on the semiconductor itself.

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Kind regards,
Bodo Arlt

Great GaN starts with great gate driving

Engineers, are you getting the full performance out of your GaN design? If not, this webinar is for you. Register now and discover how the right gate driver can unlock the true potential of CoolGaN™ devices.

Join us on 02.09.2026 to explore how Infineon's CoolGaN™ Transistors and EiceDRIVER™ level-shift gate drivers work together to enable highly efficient, high-performance designs.

In this technical webinar, our experts will explain the challenges of driving high-voltage GaN devices and show how level-shift gate driver technology can simplify implementation while delivering fast switching performance, excellent efficiency, and reliable operation.

You will gain valuable insights into the key design considerations when pairing CoolGaN™ Transistors with EiceDRIVER™ gate drivers and learn how this combination helps engineers maximize efficiency and power density across a wide range of applications.

You will learn about:

• Why gate driving matters when pushing GaN performance to the limit
• How CoolGaN™ and EiceDRIVER™ work together to enable the highest efficiency
• Common design challenges - and how to overcome them
• Tips for achieving higher efficiency, faster switching, and greater power density in your applications

Ready to power up your GaN knowledge? Reserve your seat today!

The webinar will be hosted in two sessions to suit different time zones and will be available on-demand after the live event - so you can tune in whenever it works best for you.