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On time postal delivery and
here
is the November issue ready for download.
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Dear Friends,
Only four weeks, and a little bit, until we meet in Munich for my Wide Bandgap Event! The program promises a great mix of topics, and real insights into the latest SiC and GaN technologies. Have a look here: bodoswbg.com.
When launching this event, my goal was to bring together the semiconductor manufacturers and the design engineers who are working with these "new" materials, and to foster meaningful knowledge exchange. One of the two sides has always been a bit cautious about sharing details in front of a broader audience, they preferred to stay in the crowd and soak up the crucial information. But that’s changing!
This year, I’m particularly proud to welcome not only a Director from Schaeffler to our opening roundtable, but also a company from the space sector, presenting on "SiC Semiconductors in Space Applications: Trends, Challenges, and Opportunities." I’m really looking forward to that one, just like to all the others. I’m sure these contributions will add a lot of insightful input to the event!
The Early Bird offer is still running on the event website. Be quick - seats are limited, and this opportunity will close soon!
Find all magazines from 2006 on in the free archive on my website. Do not miss our Chinese version bodospowerchina.com. There is no better way to communicate. As a publisher I serve the world: one magazine, on time, every time.
Kind Regards,
Bodo Arlt editor@bodospower.com
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| e-Newsletter Content - just click and get to your topic: |
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| The News |
Vertical GaN Architecture built on GaN-on-GaN Technology
onsemi has introduced vertical gallium nitride (vGaN) power semiconductors. These next-generation GaN-on-GaN devices conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security.
Read more ...
Digital Power Joint Lab
GigaDevice has launched a Digital Power Joint Lab in collaboration with Navitas Semiconductor. By combining GigaDevice’s GD32MCU expertise with Navitas’ advantages in high-frequency, high-speed, and highly integrated GaN technologies, and its GeneSiC™ technology leveraging ‘trench-assisted planar’ technology, the collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centers.
Read more ...
Web-Based Tools for Power Design
Analog Devices launched ADI Power Studio, a comprehensive family of products that offers modeling, component recommendations and efficiency analysis with simulation. In addition, ADI is introducing two web-based tools with a modernized user experience under the Power Studio umbrella.
Read more ...
Power Company opened its Italian Headquarters
RECOM Power Solutions (RPS), part of the RECOM Group, officially celebrated the opening of its company headquarters in Mareno di Piave, Italy. The event brought together employees from around the world, customers, and representatives from politics and business to mark this milestone.
Read more ...
Long-term Contract for green Electricity Supply
Infineon Technologies has concluded Power Purchase Agreements (PPA) with PNE and Statkraft for green electricity. Over the next ten years, Infineon will purchase green electricity from PNE AG’s Schlenzer and Kittlitz III wind farms in Brandenburg in Germany to supply its sites in Dresden, Regensburg, Warstein and Neubiberg near Munich.
Read more ...
Entering the Semiconductor Industry
Kurtz Ersa has taken over the business operations of the insolvent equipment manufacturer ATV Technologie. For Kurtz Ersa, this is the strategic step into the market for production systems for the semiconductor industry that has been announced for some time.
Read more ...
White Paper on Power Solutions for Next-Generation 800 VDC Architecture
ROHM has released a white paper detailing power solutions for AI data centers based on the 800 VDC architecture. The paper outlines power strategies that support large-scale 800 VDC power distribution across AI infrastructure.
Read more ...
APEC 2026 Early Bird Registration Now Open
The registration for APEC 2026, which will take in San Antonio, Texas (USA) on March 22-26, 2026, is now open. The IEEE Applied Power Electronics Conference and Exposition (APEC) offers a wide range of educational and social activities.
Read more ...
GaN Partnership
Cambridge GaN Devices (CGD), a fabless semiconductor company, is working with GlobalFoundries (GF), a semiconductor manufacturer. The partnership follows CGD’s fabless strategy, expanding the supply chain for the company’s ICeGaN® power devices.
Read more ...
Bosch Global Supplier Award
Isabellenhütte has received a Bosch Global Supplier Award and thus ranks globally among the best suppliers of Bosch, the supplier of technology and services. Isabellenhütte received the award in the category "Materials and components".
Read more ...
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| Events |
The Battery Show India, Greater Noida, India, October 30 - November 1
thebatteryshowindia.com
Batteries Event, Lyon, France, November 4-6
batteriesevent.com
embedded world North America, Anaheim, CA, USA, November 4-6
embedded-world.de
ENERGY STORAGE Workshop, Rome, Italy, November 5-6
supercap.org
The Magnetic Show NA, Detroit, MI, USA, November 5-6
magnetics-show.com
WiPDA, Fayetteville, AR, USA, November 10-12
wipda.org
SemIsrael, Tel Aviv, Israel, November 11
semisrael-expo.com
Thermal Management Expo Europe, Stuttgart, Germany, November 11-13
thermalmanagementexpo-europe.com
Battery Experts Forum, Darmstadt, Germany, November 11-13
battery-experts-forum.com
Design Methodologies Conference, Fayetteville, AR, USA, November 17-19
attend.ieee.org/dmc-2025
Enlit Europe, Bilbao, Spain, November 18-20
enlit-europe.com
productronica, Munich, Germany, November 18-21
productronica.com
SEMICON Europa, Munich, Germany, November 18-21
semiconeuropa.org
sps, Nuremberg, Germany, November 25-27
sps.mesago.com
Bodo's WBG Event, Munich, Germany, December 2-3
bodoswbg.com
cti symposium, Berlin, Germany, December 2-3
cti-symposium.world
IEEE IEDM, San Francisco, CA, USA, December 6-10
ieee-iedm.org
PCIM Asia New Delhi, New Delhi, India, December 9-10
pcim.in
SEMICON Japan, Tokyo, Japan, December 17-19
semiconjapan.org
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| New Products |
800 VDC Power Architecture for AI Data Centers
To address the challenge that future AI factory data centers will require megawatt-scale rack power delivery systems, EPC has developed a low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology.
Read more ...
10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics
Allegro MicroSystems introduced "the industry’s first commercially available magnetic current sensor to achieve 10 MHz bandwidth featuring Allegro’s advanced XtremeSense™ TMR (tunneling magnetoresistance) technology".
Read more ...
Supporting Wide Bandgap R&D
The Microtest Group, a manufacturer of test systems and testing of chips on packages and silicon wafers, launched two turnkey platforms for power device characterization: Quasar200 and Pulsar600.
Read more ...
100 V automotive-qualified Transistors
Infineon launched the CoolGaN™ automotive transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches.
Read more ...
Gate Driver simplifies SiC and IGBT Designs
Littelfuse released the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC/DC converter applications.
Read more ...
Power-Management Solutions for scalable AI Infrastructures
Texas Instruments (TI) debuted design resources and power-management chips to help companies meet growing artificial intelligence (AI) computing demands and scale power-management architectures from 12 V to 48 V to 800 VDC.
Read more ...
800 V Direct Current AI Data Center Power Architecture with GaN Devices
Renesas’ GaN based power solutions are especially suited for the task, supporting dense DC/DC power conversion with operating voltages of 48 V to as high as 400 V, with the option to stack up to 800 V.
Read more ...
1700 V GaN Technology for Next-Generation 800 VDC AI Data Centers
Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. The capabilities of 1250 V and 1700 V PowiGaN technology for 800 VDC power architectures are explained in a white paper.
Read more ...
Schottky Barrier Diode combining low VF and IR
ROHM has developed a Schottky barrier diode that overcomes the traditional VF / IR trade-off. This way, it delivers high reliability protection.
Read more ...
GaN Half-Bridge Gate Drivers
STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride gate drivers are tailored for systems powered from industrial or telecom bus voltages, 72 V battery systems, and 110 V AC line-powered equipment.
Read more ...
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| Imprint |
Content provider in terms of the german Telemediengesetz (TMG): Bodo's Power Systems Responsible according to § 6 TMG: Bodo Arlt -
editor@bodospower.com
Address: Katzbek 17a - D-24235 Laboe Germany Phone: +49 4343 421790 Fax: +49 4343 421789
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