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| Stable Operating Range for GaN MISHEMTs in RF Power Amplifiers identified | Imec, a research and innovation hub in nanoelectro... | 12340 | Industry News | Stable Operating Range for GaN MISHEMTs in RF Power Amplifiers identified | Imec, a research and innovation hub in nanoelectronics and digital technologies, demonstrates that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when operating within a well-defined range. These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored for use in 5G+/6G RF systems due to their excellent efficiency and power-handling capabilities. However, these devices face challenges, particularly with positive gate bias instability (ΔV<sub>th</sub>), where shifts in the threshold voltage under certain conditions can affect the performance and long-term reliability of the power amplifier. Gate bias instability in GaN MISHEMTs is a complex and largely unexplored phenomenon that can occur in the different operational states -off, semi-on, and on state- each exhibiting distinct instability mechanisms. Moreover, its role in the power amplifier operation has not been widely studied, partly because traditional RF power amplifiers typically use GaAs) HBT or HEMTs without a dielectric gate. To bridge this gap, imec researchers introduce a pragmatic analytical approach that directly compares a stable range of gate voltages in DC conditions with the actual gate modulation range in the RF power amplifier operation. Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the typical voltage swing of RF power amplifiers. This allows linearly operating power amplifiers to be designed that avoid a ΔV<sub>th</sub> concern. The researchers also show that the presence of naturally occurring positive interfacial polarization charges at the material interface plays a key role in preventing unwanted shifts in operating voltage over time. | 03.04.2025 08:00:00 | Apr | news_2025-04-15_3.jpg | \images\news_2025-04-15_3.jpg | https://www.imec-int.com/en/press/imec-identifies-stable-operating-range-gan-mishemts-rf-power-amplifiers | imec-int.com |
| High Power RF Switch | Menlo Microsystems released to production the MM52... | 12344 | Product Release | High Power RF Switch | Menlo Microsystems released to production the MM5230, a small form-factor, high performance RF switch. The MM5230 is engineered for high-power applications, supporting up to 25 W continuous and 150 W pulsed power. At the same time, its compact, 2.5 mm x 2.5 mm size means that the MM5230 can fit easily into a wide range of systems without taking up valuable board space. The switch operates seamlessly from DC to 18 GHz, and with its versatile Super-Port mode, extends to 26 GHz, making it well-suited for a wide variety of end applications. The contact design and materials, inherent in the Ideal Switch® technology, enable over 50 billion switching cycles typically. Being an RF device the insertion losses play an important role. With an on-state insertion loss of 0.3 dB at 6 GHz, the MM5230 minimizes signal degradation, which means that there is almost no loss in signal quality. With a typical IIP3 of 95 dBm, the MM5230 offers high linearity, keeping signals clear and undistorted. The MM5230's Super-Port mode extends its frequency range from 18 to 26 GHz. In this mode, the switch offers improved RF isolation and better return loss, which results in even higher-quality performance, especially when cascading switches. This solution is a perfect fit for several high-demand industries, in application fields like defense and aerospace, test and measurement, medical equipment and wireless infrastructure. | 01.04.2025 07:30:00 | Apr | news_2025-04-15_7.jpg | \images\news_2025-04-15_7.jpg | https://menlomicro.com/newsroom/menlo-micro-releases-to-production-the-mm5230-high-power-rf-switch | menlomicro.com |
| Joint Development of Automotive Components using GaN Semiconductors | Mazda Motor Corporation and ROHM have commenced a ... | 12341 | Industry News | Joint Development of Automotive Components using GaN Semiconductors | Mazda Motor Corporation and ROHM have commenced a joint development of automotive components using GaN power semiconductors. Since 2022, Mazda and ROHM have been jointly working on the development of inverters using SiC power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027. | 28.03.2025 09:00:00 | Mar | news_2025-04-15_4.jpg | \images\news_2025-04-15_4.jpg | https://www.rohm.com/news-detail?news-title=2025-03-28_news&defaultGroupId=false | rohm.com |
| CEO of SiC Semiconductor Manufacturer appointed | Wolfspeed appointed Robert Feurle as Chief Executi... | 12338 | People | CEO of SiC Semiconductor Manufacturer appointed | Wolfspeed appointed Robert Feurle as Chief Executive Officer (CEO), effective May 1, 2025, following a comprehensive internal and external search by the Board of Directors. Feurle succeeds Thomas Werner, who is serving as interim Executive Chairman and will return as Chairman of the Board following the transition. Being a citizen of both the United States and Germany, Feurle will be returning to the United States where he previously spent a decade in executive roles at Micron Technology and will be relocating to the Company's headquarters in Durham, North Carolina, where he will work closely with Werner to ensure a smooth transition. Most recently, he served as Executive Vice President and General Manager of the Opto Semiconductors Business Unit at ams-OSRAM AG, where he was responsible for managing more than 10,000 employees in sites and factories around the world. Previously, at Infineon Technologies, Micron Technology, Qimonda, and Siemens, Feurle managed strategic initiatives that enhanced competitiveness and increased revenue growth in challenging global markets. Previously e. g. at Infineon Technologies, he strategically expanded market opportunities with product introductions in the field of IGBT and SiC technologies and leading a global business unit focused on competitive differentiation and profitable growth. He was also part of the team at Infineon supporting the proposed acquisition of the Wolfspeed operations in 2016. "His experience in market-driven technology innovation and strategic business scaling makes him uniquely suited to advance Wolfspeed's global leadership in silicon carbide technology", Wolfspeed says in a press release. | 27.03.2025 06:00:00 | Mar | news_2025-04-15_1.jpg | \images\news_2025-04-15_1.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-inc-appoints-semiconductor-industry-veteran-robert-feurle-as-chief-executive-officer-and-board-member/ | wolfspeed.com |
| EMC Protection: Now also available for thin Cables | Snap ferrites, developed in-house with technology ... | 12335 | Product Release | EMC Protection: Now also available for thin Cables | Snap ferrites, developed in-house with technology using keys for retroactive cable noise suppression, are core products of Würth Elektronik. Now the STAR TEC and STAR-TEC LFS product families have grown as the company now also offers a ferrite for cable diameters of 2 to 3 mm that features all the proven practical benefits familiar from Würth Elektronik snap ferrites. EMC protection is becoming increasingly important for applications using smaller cable diameters as compact packages are facing more sources of interference. This makes noise suppression increasingly challenging. The STAR-TEC snap ferrites are used for retroactive suppression of frequency-dependent and conducted interference on single conductors in the frequency range from 1 MHz to 1 GHz. The STAR-TEC LFS series of snap ferrites were specifically designed for low-frequency applications in the 300 kHz to 30 MHz range. These snap ferrites offer a cable pre-fixation feature to simplify handling, and the pinching safeguard prevents assembly faults. The key, included with sample deliveries, allows the ferrites to be opened and reinstalled at any time, making EMC testing a snap. The internal lock also prevents unauthorized cable removal without the key. The plastic housing of the NiZn and MnZn ferrites is classified according to UL94 V0 and specified for an operating temperature range of -50 °C to +105 °C. All STAR-TEC and STAR-TEC LFS snap ferrites, now available for cable diameters between 2 and 25 mm. | 25.03.2025 13:30:00 | Mar | news_2025-04-01_16.jpg | \images\news_2025-04-01_16.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-star-tec | we-online.com |
| Subsidiary for the Benelux Region | Job van Galen takes over the management of the new... | 12321 | Industry News | Subsidiary for the Benelux Region | Job van Galen takes over the management of the newly founded subsidiary of Plasmatreat in Eindhoven, the Netherlands. The company, which manufactures and develops atmospheric pressure plasma technologies for surface treatment, serves customers in Belgium, Luxembourg and the Netherlands directly from this office, and Job van Galen is Managing Director of the new subsidiary. Van Galen holds a Bachelor of Science in Engineering Physics (2017) from Fontys University of Applied Sciences. During his more than eleven years with an international electrical equipment manufacturer, he held various technical and strategic positions and worked with companies in the automotive, medical, semiconductor, consumer goods and energy sectors. In his new role at Plasmatreat, van Galen will be responsible for technical sales, the development of sustainable relationships and application development with valued customers. Atmospheric-pressure plasma technology makes it possible to precisely modify material surfaces, improve adhesion properties and create environmentally friendly alternatives to chemical pretreatment. | 24.03.2025 07:00:00 | Mar | news_2025-04-01_2.jpg | \images\news_2025-04-01_2.jpg | https://www.plasmatreat.com/en/news-and-stories/news-and-press/detail/new-office-for-the-benelux-region | plasmatreat.com |
| Stefan Witte joins Foxy Power | Foxy Power is pleased to welcome Stefan Witte as o... | 12320 | Industry News | Stefan Witte joins Foxy Power | Foxy Power is pleased to welcome Stefan Witte as our new Technical Sales Director. With over 30 years of experience in the power electronics industry, Stefan brings a wealth of expertise in R&D, sales, and business development, further strengthening Foxy Power's capabilities and market presence. Stefan began his career in power electronics with a strong foundation in research and development before transitioning to distribution in 2006. Since then, he has held leadership roles in supplier management, technical sales, and international business development for high-power products. The Foxy Power team is excited to have Stefan on board and looks forward to his contributions in driving growth and innovation. | 24.03.2025 06:00:00 | Mar | news_2025-04-01_1.jpg | \images\news_2025-04-01_1.jpg | https://foxypower.com/ | foxypower.com |
| PCIM Asia Shanghai 2025 | The PCIM Asia Shanghai 2025 will open its doors fr... | 12322 | Event News | PCIM Asia Shanghai 2025 | The PCIM Asia Shanghai 2025 will open its doors from September 24th to 26th, 2025 at the Shanghai New International Expo Centre in Shanghai, China. With a focus on the dynamic power electronics markets in eastern and southern China, it is a platform for global experts and companies to share and discover innovative technologies and solutions. The PCIM Asia Shanghai offers an overview of the entire value chain. The exhibition will showcase developments in photovoltaics, energy storage, charging infrastructure, electric drive systems, rail transportation, automation technology, and smart building services, among others. These sectors are gaining in importance, especially within China and Asia. Combining an exhibition and conference format, the PCIM Asia Shanghai offers a central platform for direct exchange between industry, science, and research. The event brings together industry professionals to discuss current industry topics, present forward-looking solutions, and actively shape developments in the power electronics industry. For the visitors, the more than 260 exhibiting companies, presentations, practice-based sessions, and in-depth discussions will provide lots of inputs for the further development of the industry. Exhibitors include such major companies as Mitsubishi, Rohm, Fuji, Innoscience, Sun.King and CRRC. At the end of this year there will also take place a PCIM Asia New Delhi Conference on December 9th and 10th, 2025, in New Delhi, India. | 20.03.2025 08:00:00 | Mar | news_2025-04-01_3.JPG | \images\news_2025-04-01_3.JPG | https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en.html | pcimasia-shanghai.cn |
| Lithium-Ion Battery Management Platform | Renesas Electronics introduced all-in-one solution... | 12352 | Product Release | Lithium-Ion Battery Management Platform | Renesas Electronics introduced all-in-one solutions for managing lithium-ion battery packs in a wide range of battery-powered consumer products, such as e-bikes, vacuum cleaners, robotics and drones. With pre-validated firmware provided, the R-BMS F (Ready Battery Management System with Fixed Firmware) will reduce the learning curve for developers, enabling rapid designs of safe, power-efficient battery management systems. Designed for lithium-ion batteries in both 2-4 and 3-10 cell series (S), R-BMS F solutions include Renesas' fuel gauge ICs (FGICs), an integrated microcontroller (MCU) and an analog battery front end, pre-programmed firmware, software, development tools and full documentation – all available in complete evaluation kits that are now ready to ship. | 18.03.2025 15:30:00 | Mar | news_2025-04-15_15.jpg | \images\news_2025-04-15_15.jpg | https://www.renesas.com/en/about/newsroom/renesas-unveils-complete-lithium-ion-battery-management-platform-pre-validated-firmware | renesas.com |
| Chokes Offer integrated Magnetics and special Mounting | Premier Magnetics introduces the PM-CMCX5 Series, ... | 12347 | Product Release | Chokes Offer integrated Magnetics and special Mounting | Premier Magnetics introduces the PM-CMCX5 Series, the first offering in the company's CM Guard Series™ of advanced-technology chokes. The CM Guard Series implements integrated magnetics technology to build common mode (CM) and differential mode (DM) attenuation into a single device. The PM-CMCX5 Series devices' performance features a strong winding-to-winding insulation of 5 kV, an operating temperature from -60 °C to +155 °C and low-capacitive coupling to the core. The mechanical stability is achieved utilizing Premier Magnetics' proprietary Snap-In Technology to secure parts to the PCB without the use of epoxy during the assembly process. The PM-CMCX5 Series offers sixteen models with a selection of spread or compressed windings and common mode choke inductances from 0.5 to 30 mH. | 18.03.2025 10:30:00 | Mar | news_2025-04-15_10.png | \images\news_2025-04-15_10.png | https://premiermag.com/ | premiermag.com |
| Korean Automotive Tier-1 takes Stake in U.S. Fabless Semiconductor Company for EV Applications | Elevation Microsystems, delivering energy-efficien... | 12324 | Industry News | Korean Automotive Tier-1 takes Stake in U.S. Fabless Semiconductor Company for EV Applications | Elevation Microsystems, delivering energy-efficient high-voltage power management solutions for sustainable electrification, announced that Hyundai Mobis has acquired a significant stake in the company. The $15 Million investment was completed in November 2024, as disclosed in the Hyundai Mobis' 2024 business report to the Financial Supervisory Service's electronic disclosure system (DART). Elevation Microsystems has expertise in designing high-voltage power semiconductors, including SiC and GaN FETs with isolated gate drivers, and Matrix LED drivers. | 18.03.2025 10:00:00 | Mar | news_2025-04-01_5.jpg | \images\news_2025-04-01_5.jpg | https://elevationmicro.com/hyundai-mobis-acquires-stake-in-us-fabless-semiconductor-company-for-electric-vehicle-applications/ | elevationmicro.com |
| Power Management Chips for Data Centers | Texas Instruments (TI) debuted power-management ch... | 12350 | Product Release | Power Management Chips for Data Centers | Texas Instruments (TI) debuted power-management chips to support data centers. The TPS1685 is claimed to be "the industry's first 48 V integrated hot-swap eFuse with power-path protection to support data center hardware and processing needs". The devices are rated for more than 6 kW. To simplify data center design, TI also introduced a family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging. | 17.03.2025 13:30:00 | Mar | news_2025-04-15_13.jpg | \images\news_2025-04-15_13.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2025/2025-03-17-new-power-management-chips-from-ti-maximize-protection--density-and-efficiency-for-modern-data-centers.html | ti.com |
| Up to 92 % Efficiency for Power Supplies | Power Integrations has announced TinySwitch™... | 12334 | Product Release | Up to 92 % Efficiency for Power Supplies | Power Integrations has announced TinySwitch™-5, extending the output power of the family of integrated off-line switcher ICs to 175 W. The TinySwitch-5 achieves up to 92 % efficiency using basic diode rectification and optocoupler feedback. The control engine built into the TinySwitch-5 switcher ICs seamlessly manages switching frequency and power delivery to maximize efficiency, even at light loads. This enables power supplies that easily meet the light-load power consumption limit of 300 mW, set by the European Commission Energy-related Products (ErP) Directive 2009/125/EC, while still delivering up to 220 mW output power for display, controls and communications functions. An enhanced thermal package means that TinySwitch-5 ICs can deliver up to 75 W without a heatsink, and line under- and over-voltage protection ensures robustness for use in countries with unstable mains power. Reference designs are available which describe: a 12 W single-output power supply (DER-1017); a 26.5 W dual-output power supply with high standby efficiency (RDR-1016); a 36 W single-output power supply with high efficiency at light load (DER-1040); and a 120 W power supply with 92 percent efficiency at 230 V AC (DER-1027). | 17.03.2025 12:30:00 | Mar | news_2025-04-01_15.jpg | \images\news_2025-04-01_15.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-Launches-TinySwitch-5-ICs-for-High-Efficiency-Power-Supplies/default.aspx | power.com |
| Winner of the PSMA's first Global Energy Efficiency Award | Pulsiv have won the PSMA's (Power Sources Manufact... | 12325 | Industry News | Winner of the PSMA's first Global Energy Efficiency Award | Pulsiv have won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. First announced on 22nd April 2024 (Earth Day), the goal of the award was to recognize a "world achievement in system design to improve energy efficiency". Nominations were collected until 9th September 2024, with the finalists being announced on 2nd October 2024 (Energy Efficiency Day). The judges evaluated finalists based on their total global impact on the power electronics industry and where the focus was on energy efficiency, rather than renewables or electrification. During a ceremony at APEC 2025 in Atlanta, Georgia, USA, which coincided with the PSMA's 40th anniversary, Pulsiv were announced as the winner for their 65 W USB-C design, which delivers low operating temperatures and a peak efficiency of 96 %. Pulsiv's 65 W USB-C reference design combines the company's OSMIUM PFC technology with QR flyback and highly optimized, ultra-compact magnetics. It represents the first in a series of designs aimed at pushing the boundaries of power conversion by significantly lowering operating temperatures, minimizing losses, and reducing size to create a sustainable platform for the USB-C standard. | 17.03.2025 11:00:00 | Mar | news_2025-04-01_6.jpg | \images\news_2025-04-01_6.jpg | https://www.pulsiv.com/news-press/pulsiv-wins-psma-1st-global-energy-efficiency-award | pulsiv.com |
| Electric Two-Wheeler Ecosystem to accelerate E-Mobility Innovation | Microchip Technology launched its Electric Two-Whe... | 12332 | Product Release | Electric Two-Wheeler Ecosystem to accelerate E-Mobility Innovation | Microchip Technology launched its Electric Two-Wheeler (E2W) ecosystem, which is a suite of pre-validated reference designs that addresses key challenges in e-scooter and e-bike development, including power efficiency, system integration, safety and time-to-market. By offering automotive-grade, scalable solutions, Microchip enables manufacturers to streamline development and build reliable, feature-rich electric two-wheelers at various power levels and feature requirements. Backed by design files, schematics, BOM (Bill of Materials) and global technical support, developers can decrease their time-to-market for the next-generation e-scooters and e-bikes. The E2W ecosystem comprises e. g. a BMS (Battery Management System) with intelligent power conversion and sensing. A 48 V to 12 V Power Conversion Reference Design facilitates high-efficiency power distribution, improving overall system reliability, while a 7.4 kW Single-Phase AC EV Charger Reference Design offers home charging with built-in protection features. A USB-PD Dual Charging Port is designed to provide fast, flexible charging for mobile devices to enhance user convenience. Furthermore, 350 W to 10 kW traction motor control reference cater for smooth acceleration, improved energy efficiency and precise control. Pre-integrated firmware and modular design simplify system development and reduce time-to-market. Several additional digital functionalities for system integration, smart vehicle control, intelligent touch displays and a connected user experience complement the ecosystem. | 17.03.2025 10:30:00 | Mar | news_2025-04-01_13.jpg | \images\news_2025-04-01_13.jpg | https://www.microchip.com/en-us/about/news-releases/products/microchip-introduces-electric-two-wheeler-ecosystem-to-accelerate | microchip.com |
| Exceeding the 80 PLUS 'Ruby' Certification for Highest Level of Efficiency in AI Data Center Power Supplies | Navitas Semiconductor has announced that its portf... | 12339 | Industry News | Exceeding the 80 PLUS 'Ruby' Certification for Highest Level of Efficiency in AI Data Center Power Supplies | Navitas Semiconductor has announced that its portfolio of 3.2 kW, 4.5 kW, and 8.5 kW AI data center power supply unit (PSU) designs exceed the new 80 PLUS 'Ruby' certification, focused on the highest level of efficiency for redundant server data center PSUs. The 80 PLUS certification program assesses and certifies the energy efficiency of internal PSUs in computers and servers. The 'Ruby' certification was announced in January 2025 by 80 PLUS's administrating body, CLEAResult, following its endorsement by the Green Grid consortium. 'Ruby' is the most rigorous PSU efficiency standard since the 'Titanium' certification was released 14 years ago. In comparison, Ruby sets an additional 1% system efficiency across all load conditions, except at 50% load (which requires a 0.5% increase), to achieve a new benchmark of 96.5% efficiency. | 17.03.2025 07:00:00 | Mar | news_2025-04-15_2.jpg | \images\news_2025-04-15_2.jpg | https://navitassemi.com/navitas-enables-data-center-power-supplies-to-achieve-latest-80-plus-ruby-certification/ | navitassemi.com |
| Transducer Electronic Datasheet | At APEC 2025 Danisense launched a Transducer Elect... | 12330 | Product Release | Transducer Electronic Datasheet | At APEC 2025 Danisense launched a Transducer Electronic Datasheet (TEDS) functionality for its range of current transducers to further streamline lab testing processes. For test engineers, the TEDS offers an enhanced set-up, making the whole processes very quick and easy. In addition, it improves the measurement accuracy in laboratory environments. With the introduction of its "augmented" TEDS, Danisense goes beyond the requirements of the IEEE 1451 standard by offering a wealth of additional data. While the IEEE standard only includes basic details such as transducer type, model, serial number, and turn ratio, Danisense's TEDS provides engineers with expanded parameters that are vital to improving overall performance and ensuring a seamless "Plug & Play" experience. The expanded parameters of Danisense's TEDS include offset data, as well as AC and DC calibration data, allowing engineers to implement compensation loops that enhance the transducer's overall accuracy and performance. Additionally, phase shift data is available, enabling the introduction of phase compensation strategies that extend accuracy over a broader frequency range. The company also incorporates power supply information within TEDS, setting power limits to avoid set-up errors and ensure precise calibration management by including calibration dates and alarms, so users can easily track and schedule regular calibration periods. The new TEDS functionality is available across the range of Danisense current transducers, covering both current and voltage outputs. | 16.03.2025 08:30:00 | Mar | news_2025-04-01_11.jpg | \images\news_2025-04-01_11.jpg | https://danisense.com/ | danisense.com |
| Magnetics Company: "Preferred Partner" of a Semiconductor Company | Würth Elektronik is broadening its collaboration w... | 12327 | Industry News | Magnetics Company: "Preferred Partner" of a Semiconductor Company | Würth Elektronik is broadening its collaboration with semiconductor manufacturers. The company, which has collaborated with major industry players for many years, was recently recognized by Infineon as a 'Preferred Partner'. Developers benefit from this partnership by gaining access to over 480 reference designs featuring Infineon chips and compatible components on the Würth Elektronik website: A dedicated section on the Würth Elektronik website provides access to all reference designs for which Infineon uses Würth Elektronik components. The filtering functions allow users to select a reference design optimized for their application. Each design includes a comprehensive description, detailed circuit diagrams, an IC specification, and a bill of materials for the suitable Würth Elektronik components. Developers can request these components as free lab samples or access additional specs via the REDEXPERT simulation platform. The database currently includes over 25,000 Würth Elektronik components. | 13.03.2025 13:00:00 | Mar | news_2025-04-01_8.jpg | \images\news_2025-04-01_8.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=preferred-partner-infineon | we-online.com |
| Eliminating the DC-Link Capacitors: Single-Stage Bi-Directional Switch Converters | Navitas has announced "the world's first productio... | 12333 | Product Release | Eliminating the DC-Link Capacitors: Single-Stage Bi-Directional Switch Converters | Navitas has announced "the world's first production-released 650 V bi-directional GaNFast™ ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies". Targeted applications range across EV charging (On-Board Chargers and roadside), solar inverters, energy storage and motor drives. According to Navitas over 70% of today's high-voltage power converters use a 'two-stage' topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky 'DC-link' buffering capacitors. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors - the ultimate solution in EV OBCs. Previously, two discrete, 'back-to-back' single switches had to be used, but new bi-directional GaNFast ICs are monolithically integrated single-chip designs with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs. The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ R<sub>SS(on) typ</sub>.) and NV6428 (50 mΩ R<sub>SS(on) typ</sub>.) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower R<sub>SS(on)</sub> offerings in the future. The IsoFast™ devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers. | 13.03.2025 11:30:00 | Mar | news_2025-04-01_14.jpg | \images\news_2025-04-01_14.jpg | https://navitassemi.com/navitas-drives-a-paradigm-shift-in-power-with-single-stage-bi-directional-switch-bds-converters/ | navitassemi.com |
| Customizable High-Current Power Control Solution with Liquid Cooling | Advanced Energy Industries announced its Thyro-PX&... | 12346 | Product Release | Customizable High-Current Power Control Solution with Liquid Cooling | Advanced Energy Industries announced its Thyro-PX® Modular Solution, a fully configurable, distributed architecture that enables operators to build custom power control with liquid-cooled high-power stacks and external control units to meet their precise needs. The components are designed to meet the requirements of glass manufacturing, arc furnaces, rectifiers, and other high-current heating elements. Configuration options include separating control and power functions to minimize EMC issues. Thyro-PX's silicon-controlled rectifier (SCR) technology controls temperature and power. It offers precise phase angle control and improved efficiency, while reducing costs and CO<sub>2</sub> emissions compared to standard thyristors. Each Thyro-PX control unit can drive up to three high-power water-cooled Thyro-PX stacks. The Thyro-PX Modular Solution directly integrates with common field bus systems, achieving a current accuracy of 0.5%, with simple AC and DC configurations and a voltage range of up to 690 V<sub>AC</sub> (750 V<sub>DC</sub>), with 1,000 V<sub>AC</sub> available on demand. | 13.03.2025 09:30:00 | Mar | news_2025-04-15_9.png | \images\news_2025-04-15_9.png | https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-introduces-customizable-high-current-power-control-solution-with-liquid-cooling/ | advancedenergy.com |
| President and CEO of Semiconductor Company appointed | Allegro MicroSystems appointed Mike Doogue as Pres... | 12323 | People | President and CEO of Semiconductor Company appointed | Allegro MicroSystems appointed Mike Doogue as President and Chief Executive Officer and as a member of the Board. Mr. Doogue's ascension to CEO comes after 27 years of rising through the leadership ranks at Allegro, during which time he enabled many of Allegro's disruptive technologies, originally as an engineer and later as a business leader. Immediately prior to this promotion, Mr. Doogue served as Allegro's Executive Vice President and its first Chief Technology Officer (CTO), leading technology development and worldwide operations, which includes manufacturing, procurement, and quality. Mike Doogue also previously served as the Company's Senior Vice President of Technology and Products, which included direct oversight of each of the Company's business units. As a testament to his roots as an engineer and technology innovator, Mr. Doogue personally holds 75 semiconductor-related U.S. patents. Mike Doogue succeeds Vineet Nargolwala, who is stepping down as President and CEO and as a member of the Board. | 13.03.2025 09:00:00 | Mar | news_2025-04-01_4.jpg | \images\news_2025-04-01_4.jpg | https://investors.allegromicro.com/news-releases/news-release-details/allegro-microsystems-appoints-mike-doogue-president-and-chief/ | allegromicro.com |
| Collaboration on Proprietary Power Electronics for Grid Technology | ENODA and Mersen have been working in collaboratio... | 12319 | Product Release | Collaboration on Proprietary Power Electronics for Grid Technology | ENODA and Mersen have been working in collaboration on the proprietary power electronics of ENODA's flagship technology, the Enoda PRIME® Exchanger and will exhibit the stack at the upcoming Applied Power Electronics Conference (APEC) in March. The Enoda PRIME Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. ENODA is solving the fundamental challenge of the energy system: balancing exponentially rising electricity demand using generation sources that are volatile and variable. ENODA technologies can enhance grid stability, improve grid resilience, and accelerate decarbonisation. The Enoda PRIME® Exchanger is a dynamic power flow hardware technology, which can automate and enhance power quality in low-voltage networks. The Prime Exchanger has capabilities including dynamic voltage regulation; it can autonomously balance the three phases, remove damaging harmonics, correct power factor, and can provide decarbonised frequency services at scale. Thanks to Mersen's widely acclaimed expertise in laminated bus bar, cooling, high-speed fuses, film capacitor design, mechatronics, test and manufacturing, Mersen was selected as ENODA's partner to assist during the development phase of the silicon carbide-based power electronics stack. The Enoda PRIME Exchanger's power electronics stack controls the primary electromagnetic subsystem. This in turn, allows for control of all 12 degrees of freedom within the 3 phase signal. | 12.03.2025 15:30:00 | Mar | news_2025-03-15_19.jpg | \images\news_2025-03-15_19.jpg | https://enodatech.com/ | enoda.com |
| 4-Level Buck Converter for Battery Charging Applications | pSemi announced a multi-level technology, which is... | 12351 | Product Release | 4-Level Buck Converter for Battery Charging Applications | pSemi announced a multi-level technology, which is capable of fast battery charging in a low profile (<1 mm) application. The converter operates over an input range from 4.5 V to 18 V covering USB and wireless charging standards. In general, 4-level buck mode is enabled for higher input voltages, and 3-level buck mode for mid-to-low input voltages. Additionally, the device can be operated in fixed ratio, capacitor divider mode with divider ratios 2 and 3 when the input voltage is a programmable power source (PPS). Current delivery is up to 6 A per device, with the option to parallel devices to achieve faster charging times, in all operation modes using a 1 mm height inductor. | 12.03.2025 14:30:00 | Mar | news_2025-04-15_14.jpg | \images\news_2025-04-15_14.jpg | https://www.psemi.com/2024/06/17/psemi-takes-power-conversion-to-the-next-level-at-apec-2025/ | psemi.com |
| Two additional MOSFET Package Options for High-Current Applications | Alpha and Omega Semiconductor released two surface... | 12328 | Product Release | Two additional MOSFET Package Options for High-Current Applications | Alpha and Omega Semiconductor released two surface mounting package options for its high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS' AOGT66909 and AOGL66901 MOSFETs, respectively. The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used. The GLPAK offered with the AOGL66901 is a gull-wing version of AOS' TOLL package. It is designed using AOS' clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding. The GTPAK and GLPAK packages feature gull-wing leads, enabling good solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements. | 12.03.2025 06:30:00 | Mar | news_2025-04-01_9.jpg | \images\news_2025-04-01_9.jpg | https://www.aosmd.com/news/aos-adds-two-new-advanced-mosfet-package-options-high-current-applications | aosmd.com |
| 3-Phase BLDC Motor Driver | Qorvo added an integrated brushless DC (BLDC) moto... | 12336 | Product Release | 3-Phase BLDC Motor Driver | Qorvo added an integrated brushless DC (BLDC) motor driver to its growing family of power management products. This 160 V, 3-phase gate driver enables smaller solution size and reduces design time as well as bill of material (BOM) cost/count compared to a discrete approach to automotive and industrial motor control. Qorvo's ACT72350 replaces up to 40 discrete components in a BLDC motor control system and offers a configurable AFE, enabling engineers to configure their exact sensing and position detection requirements. It also includes a configurable power manager with an internal DC/DC Buck converter and LDOs to support internal components and serve as an optional supply for the host MCU device. The 25 V to 160 V input range also allows for the reuse of the same design for several battery-operated motor control applications including power and garden tools, drones, EVs and e-bikes. The ACT72350 provides programable propagation delay, precise current sensing and BEMF feedback and differentiated features for safety-critical applications. This SOI-based motor driver is available now in a 9 mm x 9 mm, 57-pin QFN package. An evaluation kit and a QSPICE model of the ACT72350 are also available. | 11.03.2025 14:30:00 | Mar | news_2025-04-01_17.jpg | \images\news_2025-04-01_17.jpg | https://www.qorvo.com/newsroom/news/2025/qorvo-3-phase-bldc-motor-driver-reduces-solution-size-design-time-and-bom-cost | qorvo.com |
| Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections | Efficient Power Conversion (EPC) has released its ... | 12342 | Industry News | Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections | Efficient Power Conversion (EPC) has released its Phase 17 Reliability Report, emphasizing GaN's position as a highly reliable technology for power electronics, automotive, AI, space, and industrial applications. The latest reliability report introduces expanded lifetime models, mission-specific reliability projections, and new physics-based wear-out mechanisms, providing engineers with more accurate and practical reliability data for GaN power devices. The key highlights of the Phase 17 Reliability Report include an expanded gate lifetime model that incorporates gate leakage current effects across voltages and temperatures, leading to enhanced impact ionization modeling as well as repetitive transient gate overvoltage testing which develops and validates a 7 V gate overvoltage rating, addressing resonance-like transient stress in real-world applications. Other highlights include enhanced drain overvoltage robustness, pulsed current rating data (extending testing to over 100 million pulses), a comprehensive thermomechanical lifetime model now including power cycling modeling and mission-specific reliability insights. EPC's test-to-fail methodology continues to push GaN technology beyond traditional silicon MOSFETs. By integrating real-world stress conditions into advanced lifetime models, the Phase 17 report allows for more accurate reliability projections for next-generation power applications. | 11.03.2025 10:00:00 | Mar | news_2025-04-15_5.jpg | \images\news_2025-04-15_5.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3200/epc-releases-phase-17-reliability-report-advancing-gan-reliability-and-lifetime-projections | epc-co.com |
| Next Generation of high-density Power Modules for VPD | Infineon Technologies launched the next generation... | 12329 | Product Release | Next Generation of high-density Power Modules for VPD | Infineon Technologies launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. The OptiMOS™ TDM2454xx quad-phase power modules are claimed to "enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators". The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer a current density of 2 A/mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year. In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance. The OptiMOS TDM2454xx modules are a fusion of Infineon's OptiMOS 6 trench technology, chip-embedded package and low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems. Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280 A across four phases with an integrated embedded capacitor layer within a small 10 mm² x 9 mm² form factor. | 10.03.2025 07:30:00 | Mar | news_2025-04-01_10.jpg | \images\news_2025-04-01_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202503-073.html | infineon.com |
| Parallel Combination of ICeGaN HEMT and IGBT | Cambridge GaN Devices (CGD) revealed more details ... | 12343 | Product Release | Parallel Combination of ICeGaN HEMT and IGBT | Cambridge GaN Devices (CGD) revealed more details about a solution that will enable the company to address EV powertrain applications over 100 kW with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions. The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e. g. 0-20 V) and excellent gate robustness. In operation, the ICeGaN switch is claimed to be very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions). Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices. ICeGaN technology allows EV engineers to enjoy GaN's benefits in DC/DC converters, on-board chargers and potentially traction inverters. Proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is said to be "a far more economical solution". CGD expects to have working demos of Combo ICeGaN at the end of this year. | 10.03.2025 06:30:00 | Mar | news_2025-04-15_6.jpg | \images\news_2025-04-15_6.jpg | https://camgandevices.com/en/p/cgd-announces-breakthrough-100kw+-technology-enabling-gan-to-address-$10b+-ev-inverter-market/ | camgandevices.com |
| Benchmark for 100 V GaN Power Transistors | EPC launches EPC2367, a 100 V eGaN® FET with a... | 12331 | Product Release | Benchmark for 100 V GaN Power Transistors | EPC launches EPC2367, a 100 V eGaN® FET with an R<sub>DS(on)</sub> of 1.2 m&ohm for power conversion applications. Designed for 48 V intermediate voltage bus architectures, the EPC2367 advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. This device is claimed to "set a benchmark in performance compared to both previous-generation GaN and traditional silicon MOSFET solutions". Its footprint measures 3.3 mm × 3.3 mm (QFN package). According to EPC it also provides an "outstanding temperature cycling reliability", which is said to be "4× the thermal cycling capability compared to previous GaN generations". In a 1 MHz, 1.25 kW system, EPC2367 is said to reduce power losses while achieving 1.25× the output power compared to previous GaN and Si MOSFET alternatives. The EPC90164 development board (measuring 2" x 2" or 50.8 mm x 50.8 mm) is a half bridge featuring the EPC2367 GaN FET. It is designed for 80 V maximum operating voltage and 35 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product's time to market. | 08.03.2025 09:30:00 | Mar | news_2025-04-01_12.jpg | \images\news_2025-04-01_12.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3201/epc-announces-new-benchmark-for-100-v-gan-power-transistors | epc-co.com |
| 80 V/100 V Power MOSFETs | Taiwan Semiconductor (TSC) has expanded its PerFET... | 12337 | Product Release | 80 V/100 V Power MOSFETs | Taiwan Semiconductor (TSC) has expanded its PerFET%trade; family of power MOSFETs with the addition of 80 V and 100 V versions. "Based on TSC's proprietary PerFET device structures and processes, these 80 V / 100 V N-channel power MOSFETs offer a best-in-class figure of merit (FOM: R<sub>DS(on)</sub>* Q = 184) and an industry-leading 175 °C avalanche rating", the company claims. The AEC-Q-qualified devices are suited for automotive power applications and other non-automotive commercial and industrial power applications. PerFET devices are housed in TSC-designed, industry-standard-size (5 mm x 6 mm) PDFN56U (single/dual) packages whose wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. Six devices comprise the 100 V PerFET series, with single-output current ratings of 50 – 100 A and dual-outputs rated at 31 A. Target applications are 48 V automotive, SMPS, server and telecom, DC/DC converters, motor drives and polarity switches. The 80 V PerFET series also offers six devices. Single-output models feature current ratings of 33 – 110 A and 31 – 33 A for dual-output models. In addition to those targeted by the 100 V series, 80 V PerFETs are suitable for ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting and telecommunications power applications. | 07.03.2025 15:30:00 | Mar | news_2025-04-01_18.jpg | \images\news_2025-04-01_18.jpg | https://www.taiwansemi.com/en/perfet-80v-and-100v-in-pdfn56u-product-family/ | taiwansemi.com |
| Buy-back of GaN IP Portfolio | Burkhard Slischka (picture) and his co-founders At... | 12326 | Industry News | Buy-back of GaN IP Portfolio | Burkhard Slischka (picture) and his co-founders Atsushi Nishikawa and Alexander Loesing have achieved a milestone for ALLOS Semiconductors by acquiring the GaN IP portfolio of AZUR Space. This strategic acquisition includes the buy-back of the GaN-on-Si technology for high power electronics (HPE) applications, which ALLOS originally sold to AZUR in 2020, along with several jointly completed innovations and resulting patent applications. With this acquisition, ALLOS' global IP portfolio has expanded to over 50 granted patents, with more to come, most of them essential for both GaN-on-Si for optoelectronics and HPE applications. This acquisition provides the company with the option to re-enter the GaN-on-Si high power electronics (HPE) market. "We believe that the unique features of ALLOS' 200 mm and 300 mm technology can significantly benefit in scaling up production while reducing unit costs", claims Burkhard Slischka, CEO of ALLOS Semiconductor. "In addition to standard silicon fab compatibility, these features include excellent crystal quality, best wafer uniformity, and award-winning breakdown voltages for undoped GaN. While we remain focused on micro-LEDs, we are open to collaborations with HPE players." | 06.03.2025 12:00:00 | Mar | news_2025-04-01_7.jpg | \images\news_2025-04-01_7.jpg | https://www.allos-semiconductors.com/news/allos-acquires-gan-ip-from-azur/ | allos-semiconductors.com |
| Strategic Partnership: Innovation Incubator | Würth Elektronik announced an additional two-year ... | 12306 | Industry News | Strategic Partnership: Innovation Incubator | Würth Elektronik announced an additional two-year partnership with Centech, a university business incubator based in Montreal, Canada. This collaboration aims to support the growth of emerging technology start-ups by combining Centech's entrepreneurial ecosystem with Würth Elektronik's expertise and resources. Centech specializes in fostering high-potential technological innovation projects originating from science and engineering disciplines. Over the past 25 years, the incubator has helped bring groundbreaking ideas to market, contributing to the creation of over 1,500 jobs by graduate companies in just the last five years. By offering entrepreneurs access to resources, tools, and industry connections, Centech provides a comprehensive platform for conceptualizing, developing, and commercializing innovative products. Through this partnership, Würth Elektronik will serve as a key supporter and champion Centech's mission to foster the next generation of technology leaders. As part of the agreement, Würth Elektronik will supply a state-of-the-art testing rack equipped with complimentary samples of electronic and electromechanical components. This equipment will enable entrepreneurs to prototype and refine their technologies with precision and efficiency. In addition to technical support, Würth Elektronik will provide expertise in electronic component selection and board layout design. Entrepreneurs will gain direct access to Würth Elektronik's global network of knowledge. | 06.03.2025 10:00:00 | Mar | news_2025-03-15_6.jpg | \images\news_2025-03-15_6.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=centech | we-online.com |
| How to add Modeling Capabilities to QSPICE Circuit Simulation Software | Qorvo announced an addition to its QSPICE circuit ... | 12349 | Product Release | How to add Modeling Capabilities to QSPICE Circuit Simulation Software | Qorvo announced an addition to its QSPICE circuit simulation software. Electronic designers can now create models for semiconductor components accurately, and in minutes instead of hours, using a tool included with the free QSPICE software package. This additional feature provides the capability to create circuit simulation models for discrete JFETs, MOSFETs and diodes using information commonly found in datasheets. Mike Engelhardt, the author of QSPICE, explained the modelling feature to the APEC visitors. In addition to analog simulation technology, QSPICE allows designers to simulate complex digital circuits and algorithms. Its combination of schematic capture and mixed-mode simulation make it a well-suited tool for solving increasingly complex hardware and software challenges. | 05.03.2025 12:30:00 | Mar | news_2025-04-15_12.jpg | \images\news_2025-04-15_12.jpg | https://www.qorvo.com/newsroom/news/2025/qorvo-adds-modeling-capabilities-to-award-winning-qspice-circuit-simulation-software | qorvo.com |
| LLC Switcher IC for 98 % Efficiency | Power Integrations announced a two-fold increase i... | 12313 | Product Release | LLC Switcher IC for 98 % Efficiency | Power Integrations announced a two-fold increase in power output from the HiperLCS™-2 chipset. Featuring half-bridge switch technology and a special package, the device can deliver up to 1650 W of continuous output power (2.5 kW peak) with over 98 % efficiency. This family member targets industrial power supplies as well as chargers for e-scooters and outdoor power tools. According to Power Integrations "the HiperLCS-2 family reduces component count and board area of half-bridge LLC resonant power converters by 30 to 60 % in applications of 50 W and higher". Its POWeDIP™ package includes an electrically insulating, thermally conductive ceramic pad that can be directly attached to any flat, heat-sinking surface. It provides sufficient creepage to the package pins, enabling an overall thermal performance of less than 1 degree Celsius per Watt. The primary-side HiperLCS2-HB devices in the chipset incorporate 600 V FREDFETs in a half-bridge configuration. Self-bias and start-up control enable operation without an external bias supply, reducing system cost and complexity. The companion IC in the chipset, the HiperLCS2-SR, incorporates a secondary-side master controller that provides "optimized synchronous rectification (SR) to reduce output rectification losses". It also includes a FluxLink™ isolator for robust, high-speed feedback to the primary-side IC, eliminating the need for a slow and unreliable optocoupler. This IC controls multi-mode burst operation for appropriate light- and no-load performance while eliminating audible noise and reducing output ripple. Fault protection is also implemented. | 05.03.2025 09:30:00 | Mar | news_2025-03-15_13.jpg | \images\news_2025-03-15_13.jpg | https://investors.power.com/news/news-details/2025/New-LLC-Switcher-IC-From-Power-Integrations-Delivers-1650-W-of-Continuous-Output-Power/default.aspx | power.com |
| onsemi proposes to acquire Allegro MicroSystems | onsemi intends to acquire Allegro MicroSystems at ... | 12304 | Industry News | onsemi proposes to acquire Allegro MicroSystems | onsemi intends to acquire Allegro MicroSystems at an implied enterprise value of $6.9 billion. onsemi has made numerous attempts over the past six months to enter into constructive discussions regarding a potential transaction. "We believe the combination of onsemi and Allegro would bring two highly complementary businesses together," said Hassane El-Khoury, President and Chief Executive Officer of onsemi, who first approached Allegro regarding a potential all-cash acquisition already in September 2024. "While we would have preferred to reach an agreement with Allegro privately, the decision to make our proposal public reflects our conviction in the merits of a combined company, which we believe is in the best interests of Allegro and onsemi shareholders." | 05.03.2025 08:00:00 | Mar | news_2025-03-15_4.jpg | \images\news_2025-03-15_4.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-proposes-to-acquire-allegro-microsystems-for-35-10-per-share-in-cash | onsemi.com |
| Design-in of 650 V GaN HEMTs in Server Power Supplies | ROHM has announced that the EcoGaN™ series o... | 12302 | Industry News | Design-in of 650 V GaN HEMTs in Server Power Supplies | ROHM has announced that the EcoGaN™ series of 650 V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM's GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions' 5.5 kW AI server power supply unit achieves greater efficiency and miniaturization. Mass production of this power supply unit is set to begin in 2025. Murata Power Solutions' series of "1U Front End" AC-DC power supplies includes the D1U T-W-3200-12-HB4C (12V output) and D1U T-W-3200-54-HB4C (54V output) 3.2kW power supplies in the high power density short version M-CRPS package, as well as the 5.5kW D1U67T-W-5500-50-HB4C designed for AI servers. These front-end power supplies deliver high conversion efficiency that meets the stringent requirements of 80+ Titanium and Open Compute products while supporting N+m redundant operation for system reliability. | 05.03.2025 06:00:00 | Mar | news_2025-03-15_2.jpg | \images\news_2025-03-15_2.jpg | https://www.rohm.com/news-detail?news-title=2025-03-05_news_murata&defaultGroupId=false | rohm.com |
| Are you looking for the latest technologies in power electronics? | Experience the full range of solutions that are re... | 12301 | Event News | Are you looking for the latest technologies in power electronics? | Experience the full range of solutions that are revolutionizing power electronics at the PCIM Expo & Conference from 6 – 8 May 2025 in Nuremberg, Germany!<br>At the leading event for power electronics, you can look forward to:<br>- New and reliable technologies from over 600 exhibitors that will equip you for the future, including new semiconductors, dependable and sustainable system solutions, and more<br>- Inspiring practice-oriented presentations that will offer you new insights<br>- Valuable contacts and knowledge sharing that promote your developments<br><br>Whether you want to make new contacts, expand your expertise, or help shape the future of power electronics, the PCIM Expo & Conference 2025 is the place where the industry meets.<br>Secure your ticket now and don't miss out on the latest pioneering technologies and developments!<br>Benefit from the Early Bird Rate until 31 March 2025. | 05.03.2025 05:00:00 | Mar | news_2025-03-15_1.jpg | \images\news_2025-03-15_1.jpg | https://pcim.mesago.com/nuernberg/en/expo/visitors.html?wt_mc=pcim.global.email.Bodo%27s.News | pcim.mesago.com |
| AI Vertical Power Delivery Platform | Empower Semiconductor introduced its scalable on-d... | 12345 | Product Release | AI Vertical Power Delivery Platform | Empower Semiconductor introduced its scalable on-demand true vertical power architecture for artificial intelligence (AI) and high-performance computing (HPC) processors. Featuring Empower's proprietary FinFast™ technology, the Crescendo platform integrates all power components into a single thin device, enabling relocation beneath the processor and eliminating the requirement for large decoupling capacitor bank. "This shrinks the AI power supply by 5x and delivers on-demand kilowatt power with unmatched speed and accuracy while reducing power distribution losses by 5-20% from a traditional lateral current transmission", said Tim Philips, CEO and Founder of Empower. "Crescendo tackles one of the biggest hurdles in AI-driven data centers-how to deliver the increasing power demands of new processors with the efficiency, responsiveness, and compact footprint required." said Phillips. | 02.03.2025 08:30:00 | Mar | news_2025-04-15_8.jpg | \images\news_2025-04-15_8.jpg | https://www.empowersemi.com/empower-debuts-revolutionary-ai-power-delivery-platform-to-solve-critical-technology-roadblock/ | empowersemi.com |
| 650 V GaN HEMT in a TOLL Package | ROHM has developed 650 V GaN HEMTs in the TOLL (TO... | 12316 | Product Release | 650 V GaN HEMT in a TOLL Package | ROHM has developed 650 V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this product, ROHM has outsourced package manufacturing to ATX Semiconductor. According to ROHM these products integrate second generation GaN-on-Si chips in a TOLL package, "achieving industry-leading values in the device metric that correlates ON-resistance and output charge (R<sub>DS(on)</sub> × Q<sub>oss</sub>)", however, without stating any numbers so far. Front-end processes are carried out by Taiwan Semiconductor Manufacturing Company (TSMC). The GaN HEMTs are suited e. g. for power supplies for servers, communication base stations, industrial equipment etc. as well as for AC adapters (USB chargers), PV inverters or ESS (Energy Storage Systems). | 27.02.2025 12:30:00 | Feb | news_2025-03-15_16.jpg | \images\news_2025-03-15_16.jpg | https://www.rohm.com/news-detail?news-title=2025-02-27_news_gan&defaultGroupId=false | rohm.com |
| Non-Isolated Bus Converters for AI Server Applications | OmniOn Power has developed its Osprey family, a fa... | 12314 | Product Release | Non-Isolated Bus Converters for AI Server Applications | OmniOn Power has developed its Osprey family, a family of high-power, non-isolated DC/DC bus converters. The product family includes 2 kW QODE167A0B, 1.6 kW QODE136A0B, and 1.3 kW QODE108A0B modules, with "the 2 kW version among the highest-powered bus converters available today in DOSA standard, quarter-brick footprints", the company points out. Enabling peak efficiencies of up to 97.6 %, the Osprey bus converters feature a 40-60 V<sub>DC</sub> input range and can transform 48 V unregulated DC rack voltages into the regulated 12 V<sub>DC</sub> output power required by high-performance GPUs with minimal power loss. The converters incorporate digital control, synchronous rectification technology, a regulated control topology, and adequate packaging techniques to achieve high efficiencies and provide low output ripple and noise in the operating temperature range of -40 °C to 85 °C. A heat plate allows for external heat sinks to be attached or for contact with a cold wall. The Osprey converters integrate a PMBus interface for power management and feature a variety of built-in protections, including output overcurrent and over voltage protection, over temperature protection, and input under and over voltage lockout. | 27.02.2025 10:30:00 | Feb | news_2025-03-15_14.jpg | \images\news_2025-03-15_14.jpg | https://www.omnionpower.com/about/news/press-releases/omnion-power-introduces-new-osprey-series-non-isolated-bus-converters-for-ai-server-applications | omnionpower.com |
| 3D Power Electronics Integration and Manufacturing Symposium (3D-PEIM 2025) | Registration is now open for the fifth internation... | 12303 | Event News | 3D Power Electronics Integration and Manufacturing Symposium (3D-PEIM 2025) | Registration is now open for the fifth international symposium on 3D Power Electronics Integration & Manufacturing (3D-PEIM) being held July 8-10, 2025. The symposium presenting advances in 3D circuits, packaging, integration and manufacturing technologies will be hosted at the U.S. Department of Energy's NREL (National Renewable Energy Laboratory) facilities in Golden, Colorado/USA. 3D-PEIM is a conference and exhibition comprising presentations by global experts as well as partner-product-and-technology exhibits. The 3D-PEIM 2025 symposium combines synergistic advances in component design, multi-component integration and 3D manufacturing. The target audience includes professionals interested in the latest advancements in power electronic technologies for computing, automotive, energy and medical equipment-and many other applications. Created and supported by PSMA's Packaging and Manufacturing Committees, the 3D-PEIM conference features plenary, keynote and contributing speakers from industry, academia and government who will address the latest design, thermal, materials, reliability and manufacturability issues. The complete technical program is scheduled as a single-track conference to allow attendees to attend every presentation. This year's 3D-PEIM will include tours of NREL's state-of-the-art laboratories-covering the Advanced Power Electronics and Electric Machines research facilities, the Energy Systems Integration Facility, the Solar Energy Research Facility and the Science and Technology Facility. | 27.02.2025 07:00:00 | Feb | news_2025-03-15_3.jpg | \images\news_2025-03-15_3.jpg | https://www.3d-peim.org/registration/ | 3d-peim.org |
| Plan for £1 Billion Investment in UK: 10 GWh Battery Factory | Volklec, a battery manufacturing business based in... | 12308 | Industry News | Plan for £1 Billion Investment in UK: 10 GWh Battery Factory | Volklec, a battery manufacturing business based in the British midlands, announces an exclusive license agreement with the Asian battery supplier, Far East Battery (FEB). FEB provides energy storage solutions and EV power globally since 2009. In a first-of-its-kind technology and knowledge transfer agreement, Volklec will manufacture lithium-ion batteries in the UK. "Production starts later this year from Volklec's launch base at the UK Battery Industrialisation Centre (UKBIC), supported by a delivery partnership team of specialists from FEB in China to ensure a high yield, high quality manufacturing line in readiness for the start of production in Coventry", the UK company reports. Two specifications of lithium-ion 21700 cylindrical battery cells will be manufactured by Volklec. First to production will be a proven energy cell – a compact cylindrical cell using NMC chemistry to serve the broad e-mobility and energy storage sectors. This will be followed by the launch of a power cell aimed primarily at servicing the High Value Manufacturing sector, in particular specialist applications within automotive, aerospace, marine and off-highway. Volklec will be utilising UKBIC's current 100 MWh line to produce the energy cell, with an additional 1 GWh production line to be installed by the end of 2026 to manufacture the power cell. Volklec's strategic roadmap includes a dedicated 10 GWh gigafactory representing an investment of more than £1 billion and creating more than 1,000 highly skilled jobs by the end of the decade. | 26.02.2025 12:00:00 | Feb | news_2025-03-15_8.jpg | \images\news_2025-03-15_8.jpg | https://volklec.com/ | volklec.com |
| Expanding Rapid Prototyping Capabilities for customized Coil Configurations | Danisense is enhancing its R&D capabilities with t... | 12305 | Industry News | Expanding Rapid Prototyping Capabilities for customized Coil Configurations | Danisense is enhancing its R&D capabilities with the integration of winding machines into its rapid prototyping setup. The investment is aimed at streamlining the development process for next-generation current transducers and accelerating their time-to-market. By incorporating advanced Ruff winding machines, Danisense is now able to produce highly customized coil configurations in-house – a critical component for highly precise current sense transducers. These winding machines support a wide range of wire gauges and winding patterns, allowing for greater flexibility in designing sensor coils. This is particularly crucial for applications in power electronics, renewable energy, and high-performance industrial systems, where highly precise current measurement is essential. By bringing more of the prototyping process in-house, Danisense reduces its reliance on external suppliers, shortens the development cycles, and enhances intellectual property protection. | 26.02.2025 09:00:00 | Feb | news_2025-03-15_5.jpg | \images\news_2025-03-15_5.jpg | https://danisense.com/ | danisense.com |
| 600 V MOSFET with 24 Milliohm On Resistance | Toshiba Electronics has launched an N-channel powe... | 12300 | Product Release | 600 V MOSFET with 24 Milliohm On Resistance | Toshiba Electronics has launched an N-channel power MOSFET named TK024N60Z1, which uses the DTMOSVI 600V series process with a super junction structure. Applications include servers in data centres, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators. The TK024N60Z1 has an R<sub>DS(on)</sub> of 0.024 Ω (max). The drain-source on-resistance × gate-drain charge is reduced by approximately 52% compared to Toshiba's conventional generation DTMOSIV-H series products with the same drain-source voltage rating. The company offers tools that support circuit design for switched-mode power supplies. These include the G0 SPICE model and the highly accurate G2 SPICE models that reproduce transient characteristics. | 25.02.2025 15:30:00 | Feb | news_2025-03-01_18.jpg | \images\news_2025-03-01_18.jpg | https://toshiba.semicon-storage.com/eu/company/news/2025/02/mosfet-20250225-1.html | toshiba.semicon-storage.com |
| 1 A Buck Converter for Low-Voltage Loads | STMicroelectronics' DCP3601 miniature monolithic b... | 12318 | Product Release | 1 A Buck Converter for Low-Voltage Loads | STMicroelectronics' DCP3601 miniature monolithic buck converter requires six components to complete the circuit, including the inductor, bootstrap and filter capacitors, and feedback resistors for setting the output voltage, while the power switches and compensation are built-in. With its 3.3 V-to-36 V input voltage range and 1 A output capability, the DCP3601 can power low-voltage loads in applications such as smart meters, domestic appliances, and industrial 24 V conversion. Synchronous rectification and a fixed switching frequency of 1 MHz provide an efficiency reaching 91 % across the load range and under all operating conditions, at 600 mA with 12 V input and 5 V output. Different variants, offer the choice of forced-PWM operation for noise-sensitive applications or pulse-skipping at light load for minimal power consumption. Additionally, both the low-noise and low-consumption variants are available with frequency dithering to reduce noise power at the 1 MHz switching frequency. All variants have a quiescent current of 110 µA and an Enable pin that allows turning off the converter with a dedicated signal to maximize power savings. Designers can directly start their projects with the DCP3601 using the dedicated evaluation board, STEVAL-3601CV1. The board comes with screw terminals and headers and is ready to power-up out of the box. The single-chip buck converter is packaged as a 3 mm x 1.6m m SOT23 6-lead device. | 25.02.2025 14:30:00 | Feb | news_2025-03-15_18.jpg | \images\news_2025-03-15_18.jpg | https://community.st.com/t5/developer-news/simple-efficient-flexible-1a-buck-converter-powers-low-voltage/ba-p/774562 | st.com |
| Webinar to Simplify DC-DC Converter Design | Mouser Electronics has teamed up with Würth Elektr... | 12309 | Event News | Webinar to Simplify DC-DC Converter Design | Mouser Electronics has teamed up with Würth Elektronik to present a free webinar titled "How to Get Started with Your Power Supply Design". The event will take place on 25th March 2025 at 16:00 CET. The design of DC-DC converters is growing in complexity due to the escalating demand for compact, reliable power supplies, coupled with the necessity for heightened efficiency to tackle global energy consumption and CO2 emissions. As specialist expertise in power supply design becomes scarcer, engineers must look for ways to simplify the design process, reduce design iterations and accelerate time to market. This webinar will provide actionable insights into the complexities of power supply design, specifically focusing on the most important design considerations for DC-DC buck converters. The session will also demonstrate how REDEXPERT can help engineers streamline their design process by simplifying calculations, simulation and validation. This easy-to-use software solution from Würth Elektronik enables users to precisely calculate complete AC losses by measuring the power inductors in a switching controller setup. | 25.02.2025 13:00:00 | Feb | news_2025-03-15_9.jpg | \images\news_2025-03-15_9.jpg | https://emea.info.mouser.com/webinar-wurth-powersupplydesign-emea | mouser.com |
| Global Distribution Agreement | DigiKey and Qorvo announced a worldwide distributi... | 12307 | Industry News | Global Distribution Agreement | DigiKey and Qorvo announced a worldwide distribution agreement. DigiKey will distribute Qorvo's leading connectivity and power solutions worldwide. The collaboration with DigiKey extends Qorvo's product reach across North America, EMEA and APAC regions, enabling rapid delivery and additional support for customers in markets such as IoT, defense, aerospace, automotive, power and wireless infrastructure. By leveraging DigiKey's logistics and distribution capabilities, Qorvo will satisfy growing demand and accelerate its customers' time-to-market. Currently, DigiKey offers over 15.9 million products, from over 3,000 name-brand manufacturers which enables Qorvo's customers to directly order entire bills of materials in one place. | 25.02.2025 11:00:00 | Feb | news_2025-03-15_7.jpg | \images\news_2025-03-15_7.jpg | https://www.digikey.com/en/news/press-releases/2025/february/digikey-and-qorvo-announce-global-distribution-agreement | digikey.com |
| Automotive Grade LDOs | Nexperia introduced a series of AEC-Q100 qualified... | 12298 | Product Release | Automotive Grade LDOs | Nexperia introduced a series of AEC-Q100 qualified general-purpose low-dropout (LDO) voltage regulators with a typical quiescent current of 5.3 µA at light load and 300 nA (typical) shut-down current under disabled mode, which are suited for powering always-on components like microcontrollers, CAN or LIN transceivers in standby and CAN-wake systems. These LDOs are thermally enhanced and can generate a stable voltage source under cold-crank conditions for ripple-sensitive loads in automotive applications including infotainment systems, ADAS as well as telematics, and lighting systems. Beyond automotive applications, these LDOs are well-suited for industrial applications, including power tools, e-bikes and battery packs. Additionally, for ratiometric sensing or measurement applications, the tracking LDOs deliver exceptional output accuracy, tracking supply voltages of A/D converters or MCUs within ±5 mV. The general LDOs generate a stable (±2% accuracy) 3 V or 5 V output from a 3-40 V input voltage range. Integrated protection features include short-circuit, over-current and thermal shutdown and these LDOs can operate over a -40 °C to 125 °C (ambient) and -40 °C to 150 °C (junction) temperature range. The series also features devices with a power good (PG) output voltage status monitor that can be used to support functional safety-related system designs. NEX90x30-Q100 LDOs provide 300 mA of output current capability and are available in a choice of packages including the thermally enhanced, bottom-side cooled 8-pin HTSSOP package measuring 3 mm x 3 mm and a DFN6 package measuring 2 mm x 2 mm. | 20.02.2025 13:30:00 | Feb | news_2025-03-01_16.jpg | \images\news_2025-03-01_16.jpg | https://www.nexperia.com/about/news-events/press-releases/New-series-of-automotive-grade-LDOs-from-Nexperia-offer-high-accuracy-and-ultra-low-quiescent-current | nexperia.com |
| 20 W Miniature DC/DC Converter for Rail Applications | RECOM has introduced a DC/DC converter in a compac... | 12315 | Product Release | 20 W Miniature DC/DC Converter for Rail Applications | RECOM has introduced a DC/DC converter in a compact 1.6" x 1" x 0.4" package (40.6 mm x 25.4 mm x 10.2 mm). The RPA20-FR series delivers 20 W over its full 36 V<sub>DC</sub> -160 V<sub>DC</sub> input range (200 V<sub>DC</sub> peak for 1 s) from -40 °C to 70 °C and 105 °C with derating. Fully regulated, low-noise, and protected single outputs available are 5 V, 5.1 V, 12 V, 15 V, and 24 V<sub>DC</sub>, trimmable by +20 %/-10 % minimum, while +/-5 V, +/-12 V, and +/-15 V<sub>DC</sub> options are also offered. Remote ON/OFF control with positive or negative logic and under-voltage lock-out is included, and no minimum load is required. The parts are designed specifically for rolling stock applications with nominal input voltages of 48 V, 72 V, or 110 V<sub>DC</sub> and are EN45545-2 and EN50155 compliant, as well as for UL/IEC/EN62368-1 for audio/video and IT applications. Full 3 kV<sub>AC</sub> for 1 min reinforced isolation is provided, and the parts comply with EMC 'Class A' levels as well as rail EMC standard EN 50121-3-2. A separate protection module RSP150-168 is available to protect against surges according to RIA12 and NF F01-51 standards. The RPA20-FR series meets environmental standards required for rail applications, particularly EN45545-2 for fire protection, EN60068-2-1 for dry and damp heat, and EN61373 for shock and vibration. MTBF is over 1.5 million hours at 25 °C, according to MIL-HDBK-217F, GB. | 20.02.2025 11:30:00 | Feb | news_2025-03-15_15.jpg | \images\news_2025-03-15_15.jpg | https://recom-power.com/en/rec-n-20w-miniature-dc!sdc-converter-is-optimized-for-rail-applications-415.html?0 | recom-power.com |
| TVS delivers improved Performance and lower Cost | Taiwan Semiconductor introduces the first product ... | 12348 | Product Release | TVS delivers improved Performance and lower Cost | Taiwan Semiconductor introduces the first product in its series of SUPER CLAMP™ Snapback TVS devices. SUPER CLAMP TVS diodes have snapback characteristics featuring a 1.0 to 1.05 clamping ratio between the designated breakdown voltage and clamping voltage. The lower clamping voltage of the snapback TVS protects the circuit at a much higher peak pulse current than conventional TVS diodes. This enables designers to use lower-working-voltage and less costly components (capacitors, switching MOSFETs, reverse polarity protection diodes and regulators) while still maintaining proper design margins. The first in the series of SUPER CLAMP snapback TVS devices is the 24V LTD7524CAH. This 24 V snapback TVS device provides a peak power rating of 7700 W and is designed to clamp repetitive (10/1000 µs) transients of up to 300 V peak, which is claimed to be nearly twice that of comparable standard TVSs. With a temperature rating of -55 °C to +175 °C, the DO-218AB-packaged SUPER CLAMP diodes meet AEC-Q101 automotive qualification and ISO7637. Suitable for any transient protection application working at 24 V or greater, the SUPER CLAMP snapback TVS is usable for hybrid electric vehicle 48 V buses, battery management systems and chargers, alternators, lighting protection, telecom/datacom/networking 36–72-V rails, EMP protection systems, industrial process controls and avionics. | 20.02.2025 11:30:00 | Feb | news_2025-04-15_11.png | \images\news_2025-04-15_11.png | https://www.taiwansemi.com/en/low-clamp-24v-surface-mount-tvs | taiwansemi.com |
| Space-Grade 200 V GaN FET Gate Driver | Texas Instruments (TI) announced a family of radia... | 12294 | Product Release | Space-Grade 200 V GaN FET Gate Driver | Texas Instruments (TI) announced a family of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers. This family of gate drivers includes the industry's first space-grade GaN FET driver that supports up to 200 V operation. The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. The 200 V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels. The 60 V and 22 V versions are intended for power distribution and conversion across the satellite. Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available now on TI.com. Additionally, development resources include evaluation modules, as well as reference designs and simulation models. | 20.02.2025 09:30:00 | Feb | news_2025-03-01_12.jpg | \images\news_2025-03-01_12.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2025/industrys-first-space-grade-200V-GaN-FET-gate-driver-from-TI-helps-satellites-become-smaller-and-more-efficient.html | ti.com |
| 1200 V SiC Full-Bridge Modules tested to over 1350 W | SemiQ has announced a family of three 1200 V SiC f... | 12317 | Product Release | 1200 V SiC Full-Bridge Modules tested to over 1350 W | SemiQ has announced a family of three 1200 V SiC full-bridge modules, each integrating two of the company's rugged high-speed switching SiC MOSFETs with reliable body diode. The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications. Available in 18, 38 and 77 mΩ (R<sub>DSon</sub>) variants, the modules have been tested at voltages exceeding 1350 V and deliver a continuous drain current of up to 102 A, a pulsed drain current of up to 250 A and a power dissipation of up to 333 W. Operational with a junction temperature of up to 175 °C, the B2 modules have switching losses E<sub>ON</sub> of 0.13 mJ, and E<sub>OFF</sub> of 0.04 mJ at 25 °C in the 77 mΩ module, while their zero-gate voltage drain/gate source leakage is specified with 0.1 µA / 1 nA for all modules. The 18 mΩ module provides a junction to case thermal resistance of 0.4 °C/W. The modules, which are housed in a 62.8 x 33.8 x 15.0 mm<sup>3 </sup>package (including mounting plates) with press fit terminal connections and split DC negative terminals, can be mounted directly to a heat sink. | 19.02.2025 13:30:00 | Feb | news_2025-03-15_17.jpg | \images\news_2025-03-15_17.jpg | https://semiq.com/semiq-1200v-sic-full-bridge-modules-simplify-development-of-solar-inverters-energy-storage-and-battery-charging-applications/ | semiq.com |
| PCIM Asia Shanghai 2025: Call for Papers | PCIM Asia will take place from 24 – 26 September 2... | 12285 | Event News | PCIM Asia Shanghai 2025: Call for Papers | PCIM Asia will take place from 24 – 26 September 2025 in halls N4 and N5 of the Shanghai New International Expo Centre. Held alongside the exhibition, the PCIM Asia Shanghai Conference serves as an Asian platform connecting academia and industry in power electronics. In 2025, it will once again bring together experts and scholars to share insights and foster collaboration between industry, academia, and research institutes. Paper submissions for the Conference are now open. The 2025 conference seeks submissions on a topics like advanced power semiconductors, packaging and reliability, passive components and integration, AC/DC and DC/DC converters, digital power conversion, motor drives & motion control, high frequency power electronic converters and inverters, automotive power electronics and electrified transportation, system reliability and power quality. All submissions will be evaluated by the PCIM Asia Shanghai Conference Advisory Board. Selected papers will be considered for oral presentations or poster sessions, with accepted works published in the conference proceedings and indexed in Ei Compendex, IEEE Xplore, IET Inspec-Direct and Scopus databases. Key submission dates are:<br>- Abstract submission deadline: March 2025<br>- Notification of abstract acceptance: May 2025<br>- Full paper submission deadline: 20 June 2025 | 19.02.2025 08:00:00 | Feb | news_2025-03-01_3.jpg | \images\news_2025-03-01_3.jpg | https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en/press/press-releases/2025/PCIM25_PR2.html | pcimasia-shanghai.cn |
| Oscilloscope Days 2025 | In this two day online webinar on April 2 & 3, Ex... | 12283 | Event News | Oscilloscope Days 2025 | In this two day online webinar on April 2 & 3, Experts of Rohde and Schwarz, Würth Elektronik and PE System will show you how an oscilloscope in combination with properly selected probes and other accessories can effectively be used. Join Oscilloscope Days to learn the essentials of oscilloscopes by joining virtual hands-on sessions that relate to real world design challenges. | 19.02.2025 06:00:00 | Feb | news_2025-03-01_1.png | \images\news_2025-03-01_1.png | https://www.rohde-schwarz.com/knowledge-center/webinars/oscilloscope-days_257878.html | rohde-schwarz.com |
| GaN Transistor in Silicon-Footprint Packages | Gallium Nitride suppliers have thus far taken diff... | 12295 | Product Release | GaN Transistor in Silicon-Footprint Packages | Gallium Nitride suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for users. Infineon Technologies addresses this by announcing the gallium nitride CoolGaN™ G3 Transistor 100 V in RQFN 5x6 package (IGD015S10S1) and 80 V in RQFN 3.3x3.3 package (IGE033S08S1). According to Infineon these "devices are compatible with industry-standard silicon MOSFET packages, meeting demands for a standardized footprint, easier handling and faster-time-to-market". The CoolGaN G3 100 V Transistor devices will be available in a 5x6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that allows for multi-sourcing strategies and complementary layouts to Silicon-based designs. | 18.02.2025 10:30:00 | Feb | news_2025-03-01_13.jpg | \images\news_2025-03-01_13.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202502-057.html | infineon.com |
| Funding for GaN Company secured | Cambridge GaN Devices (CGD) has closed a $32 milli... | 12287 | Industry News | Funding for GaN Company secured | Cambridge GaN Devices (CGD) has closed a $32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital. CGD's proprietary monolithic ICeGaN technology for the implementation of GaN into existing and progressive designs delivers efficiency levels exceeding 99%, enabling energy savings of up to 50% in a wide range of high-power applications including electric vehicles and data centre power supplies. By enabling efficient, compact, and high-performance power devices, CGD intends to set "a new standard for sustainable power electronics". | 18.02.2025 10:00:00 | Feb | news_2025-03-01_5.JPG | \images\news_2025-03-01_5.JPG | https://camgandevices.com/en/p/cambridge-gan-devices-secures-$32m-to-drive-global-growth-in-power-semiconductor-industry/ | camgandevices.com |
| 2000 V 40 A 4-Phase Boost Module | Inventchip Technology (IVCT) introduced IV3B20023B... | 12299 | Product Release | 2000 V 40 A 4-Phase Boost Module | Inventchip Technology (IVCT) introduced IV3B20023BA2, 2000 V 4-phase boosts in a 3B module package. Each phase consists of a 2000 V 23 mΩ SiC MOSFET and a 40 A diode connected in a boost converter topology. The product was designed to aim 1500 V solar photovoltaic (PV) system applications. The four phase boosts are divided into two electrically isolated groups. Each group has two boosts with a common power ground and separate boost outputs and has a NTC for DBC temperature sensing. The 3B module has the same dimensions of the standard Easy-3B and is of a minimum 10 mm creepage from terminals to terminals and terminals to heatsink. The difference is that the 3B uses a metal base instead of a bare DBC. The metal base allows the module to be screwed on a heatsink with a stable attaching force and avoid the Easy-3B plastic case aging issue which could lead to the reduction or loss of the attaching force during temperature cycling test or real applications. The 2 kV MOSFET is based on Inventchip's second generation SiC technology, and the co-packed 2000 V SiC diode was designed to have a surge current over 5 times of its rated DC current. Compared with the fly-cap topology currently used in 1500 V PV systems, the 2000 V boost converter simplifies PV MPPT circuit design significantly. It eliminates external capacitors, halves the drive circuit and avoids the fly-cap topology patent issue. | 17.02.2025 14:30:00 | Feb | news_2025-03-01_17.png | \images\news_2025-03-01_17.png | https://www.inventchip.com.cn/En/sic%20module | inventchip.com.cn |
| AEC-Q101-qualified TVS Devices | Taiwan Semiconductor introduces the first product ... | 12296 | Product Release | AEC-Q101-qualified TVS Devices | Taiwan Semiconductor introduces the first product in its series of SUPER CLAMP™ Snapback TVS devices. SUPER CLAMP TVS diodes have snapback characteristics featuring a 1.0 to 1.05 clamping ratio between the designated breakdown voltage and clamping voltage. The lower clamping voltage of the snapback TVS protects the circuit at a much higher peak pulse current than conventional TVS diodes. This enables designers to use lower-working-voltage and less costly components (capacitors, switching MOSFETs, reverse polarity protection diodes and regulators) while still maintaining proper design margins. The first in the series of SUPER CLAMP snapback TVS devices is the 24V LTD7524CAH. The 24 V snapback TVS device provides a peak power rating of 7700 W and is designed to clamp repetitive (10/1000 µs) transients of up to 300 V peak. With a temperature rating of -55 °C to 175C °C, the DO-218AB-packaged SUPER CLAMP diodes meet AEC-Q101 automotive qualification and ISO7637. Suitable for any transient protection application working at 24 V or greater, the SUPER CLAMP snapback TVS is designed e.g. for hybrid electric vehicle 48 V buses, battery management systems and chargers, alternators, lighting protection, telecom/datacom/networking 36–72 V rails, EMP protection systems, industrial process controls and avionics. | 14.02.2025 11:30:00 | Feb | news_2025-03-01_14.png | \images\news_2025-03-01_14.png | https://www.taiwansemi.com/en/low-clamp-24v-surface-mount-tvs/ | taiwansemi.com |
| Intelligent Solutions for a Secure, Connected Future | Analog Devices (ADI) will be connecting with indus... | 12288 | Event News | Intelligent Solutions for a Secure, Connected Future | Analog Devices (ADI) will be connecting with industry leaders in Nuremberg for Embedded World 2025. Visitors to the ADI booth will have the opportunity to explore 18 feature-rich demos which highlight the company's broad portfolio and their ability to deliver system-level solutions that enable their customers to stand out in the market. Among the innovations on show, ADI's software capabilities will be demonstrated across a range of functionality in their CodeFusion Studio™ platform. By visiting the ADI booth, attendees will learn more about ADI's commitment to advancing the performance, and accelerating the development of, embedded system design. Whether through direct customer support, design tools, or robust technical resources, ADI is focused on providing exactly what customers need to bring their systems to life. Attendees are invited to join ADI in pioneering a secure, connected future at Hall 4A, Booth 360. | 13.02.2025 11:00:00 | Feb | news_2025-03-01_6.jpg | \images\news_2025-03-01_6.jpg | https://www.analog.com/en/lp/001/embedded-world.html | analog.com |
| First Products from 200 mm SiC Wafers | Infineon Technologies will release the first produ... | 12284 | Industry News | First Products from 200 mm SiC Wafers | Infineon Technologies will release the first products based on its 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles. Additionally, the transition of Infineon's manufacturing site in Kulim, Malaysia, from 150-millimeter wafers to the larger and more efficient 200-millimeter diameter wafers is fully on track. The newly built Module 3 will commence high-volume production aligned with market demand. | 13.02.2025 07:00:00 | Feb | news_2025-03-01_2.jpg | \images\news_2025-03-01_2.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202502-055.html | infineon.com |
| 20 W DIN-Rail AC/DC Power Supply | Low power AC/DC converters used in cabinet and DIN... | 12297 | Product Release | 20 W DIN-Rail AC/DC Power Supply | Low power AC/DC converters used in cabinet and DIN rail applications are often installed by non-specialists. As a result, they must be designed to handle worst-case supply conditions while remaining uncritical in terms of mounting orientation and airflow requirements. The RAC20NE-K/277/EPID series from RECOM are well-suited in these respects with a 85-305 V<sub>AC</sub> input range, rated Class II and OVC III to 3000 m. Their 26.4 mm width occupies little space on a DIN-Rail or back-plate, delivering 20 W output power without airflow up to +55 °C (85 °C with derating). Additionally, the parts can be chassis mounted in any orientation using the provided fixing holes. With IP40 ingress protection, and tool-free push-in terminals for input and output connections, installation is quick. The encapsulated RAC20NE-K/277/EPID models offer fully regulated DC outputs of 5, 12, 24, or 36 V<sub>DC</sub>, with an additional 24 V<sub>DC</sub> version featuring active current limitations. With efficiencies up to 88 %, these power supplies operate with an MTBF exceeding 1 million hours. They comply with safety standards for reinforced isolation, 'Class B' EMC levels with a floating or grounded output and meet Eco-design no-load and standby loss requirements. Short circuit, over-current, over-voltage, and over-temperature protection are provided. The size of the RAC20NE-K/277/EPID is 83.0 (H) x 26.4 (W) x 29.5 (D) mm³ and parts are supplied with a clip for tool-less 'snap-on' fitting to a fixed DIN-Rail. | 12.02.2025 12:30:00 | Feb | news_2025-03-01_15.jpg | \images\news_2025-03-01_15.jpg | https://recom-power.com/en/rec-n-20w-din-rail-ac!sdc-power-supply-is-highly-versatile-408.html?4 | recom-power.com |
| 650 V MOSFETs in Q-DPAK and TOLL packages | Infineon Technologies has expanded its portfolio o... | 12311 | Product Release | 650 V MOSFETs in Q-DPAK and TOLL packages | Infineon Technologies has expanded its portfolio of discrete CoolSiC™ MOSFETs 650 V with two product families housed in Q-DPAK and TOLL packages. These product families, with top- and bottom-side cooling, are based on the CoolSiC Generation 2 technology targeting high- and medium-power switched-mode power supplies (SMPS) including AI servers, renewable energy, chargers for electric vehicles, e-mobility and humanoid robots, televisions, drives and solid-state circuit breakers. According to Infineon "the TOLL package offers outstanding Thermal Cycling on Board (TCoB) capability", enabling compact system designs by reducing the PCB footprint. The introduction of the Q-DPAK package complements the ongoing development of Infineon's family of Topside Cooled (TSC) products. The TSC family enables direct heat dissipation of 95 percent, allowing the use of both sides of the PCB for better space management and reduction of parasitic effects. These MOSFETS in TOLL packages are now available with on-resistances from 10 to 60 mΩ, while the Q-DPAK variant is available in 7, 10, 15 and 20 mΩ. | 12.02.2025 07:30:00 | Feb | news_2025-03-15_11.jpg | \images\news_2025-03-15_11.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202502-054.html | infineon.com |
| Miniature Chip Resistors | ROHM has expanded its portfolio of general-purpose... | 12292 | Product Release | Miniature Chip Resistors | ROHM has expanded its portfolio of general-purpose chip resistors with the MCRx family. It is designed to achieve greater miniaturization and enhanced performance across a variety of applications. The new lineup includes the high-power MCRS series and low-resistance, high-power MCRL series. The MCRS series improves rated power and TCR (Temperature Coefficient of Resistance) characteristics by improving the internal structure and incorporating new materials, enabling use in a smaller size compared to conventional products. Sizes range from 0402/1005 to 2512 / 6432. The MCRL series, a low-resistance variant of the MCRS series, is offered in sizes ranging from 0805 / 2012 to 2512 / 6432. The MCRx family complies with the AEC-Q200 automotive reliability standard and meets the demand for electric vehicles (xEVs) while contributing to market expansion in communications infrastructure such as base stations and servers as well as factory automation equipment. | 12.02.2025 07:30:00 | Feb | news_2025-03-01_10.jpg | \images\news_2025-03-01_10.jpg | https://www.rohm.com/news-detail?news-title=2025-02-12_news_resistor&defaultGroupId=false | rohm.com |
| High Voltage Diodes | Dean Technology (DTI) announced the XNVG Series, a... | 12291 | Product Release | High Voltage Diodes | Dean Technology (DTI) announced the XNVG Series, a line of axial leaded high voltage diodes in a subminiature package. An enhanced version of the existing XNV Series, the XNVG Series offers diodes from 2 to 5 kV with a fast recovery time of 50 ns; they are designed with DTI's diode technology, named XOETM. In addition to the XNVG Series, DTI also offers additional high voltage diodes built with the XOE technology, including the before mentioned XNV Series, the XGF Series, and the XGA Series. | 12.02.2025 06:30:00 | Feb | news_2025-03-01_9.jpg | \images\news_2025-03-01_9.jpg | https://www.deantechnology.com/new-enhanced-series-of-xoe-high-voltage-diodes/ | deantechnology.com |
| Platform for Sensor, Measurement and Testing Technology | At the SENSOR+TEST trade show, which will take pla... | 12289 | Event News | Platform for Sensor, Measurement and Testing Technology | At the SENSOR+TEST trade show, which will take place in Nuremberg, Germany, from May 6 to 8, 2025, the focus is on sensor, measuring and testing technology. This applies to all key industries – from automotive and mechanical engineering to rail and aerospace. The SENSOR+TEST offers several presentation opportunities, especially for companies with a limited budget. By participating in topic-specific joint stands, exhibitors can present their innovations to a broad specialist audience and benefit from synergy effects at the same time. The Federal Ministry for Economic Affairs and Climate Protection (BMWK) is also specifically promoting the participation of German young innovative companies at trade fairs in 2025. Participation in the "Young Innovators" pavilion will be subsidized with up to 60% of the costs. In addition, other ranges will be dedicated to special topics, such as the Calibration Area or the Condition Monitoring Area with an integrated Technology Forum. Many exhibitors will also be presenting themselves under the umbrella of associations and initiatives such as the Strategic Partnership for Sensor Technology, the Fraunhofer-Gesellschaft, Bayern Innovativ and, for the first time, the INNOMAG association. In 2024, 383 companies from 29 countries presented their spectrum of system expertise from sensors and cloud technologies to AI solutions. Furthermore, the SMSI 2025 – Sensor and Measurement Science International Conference – will take place parallel to the trade fair. This international conference offers scientists and developers the opportunity to present the latest research results and exchange information on current developments. | 11.02.2025 12:00:00 | Feb | news_2025-03-01_7.JPG | \images\news_2025-03-01_7.JPG | https://www.sensor-test.de/en/press/press-center/press-releases/sensor-test-2025-the-essential-platform-for-sensor-measurement-and-testing-technology | sensor-test.de |
| German Company with lots of Presentations at APEC 2025 | Würth Elektronik announced its participation as an... | 12272 | Event News | German Company with lots of Presentations at APEC 2025 | Würth Elektronik announced its participation as an Emerald Partner at the 40th IEEE Applied Power and Electronics Conference and Exhibition (APEC). The exhibition will take place from March 17–19, 2025, at the Georgia World Congress Center in Atlanta, Georgia, with pre-show workshops held March 15–16. Celebrating its 40th anniversary, APEC has established itself as the leading conference for power electronics professionals across North America. This year's event will focus on innovation, collaboration, and advancements shaping the future of the industry. The conference begins with the 10th Annual Magnetics @ High Frequency Workshop, co-organized by PSMA and PELS, on Saturday before the exhibition, where Würth Elektronik's experts will present several insight presentations during this workshop: Throughout the APEC exhibition, Würth Elektronik will further five additional presentations. On top of this Würth Elektronik will also deliver three Exhibitor Presentations on the show floor, complemented by interactive demonstrations and technical showcases at Würth Elektronik's booth – including a photobooth for capturing memorable moments. | 11.02.2025 11:00:00 | Feb | news_2025-02-15_6.jpg | \images\news_2025-02-15_6.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=apec2025 | we-online.com |
| Low-Profile AC-DC Power Supplies suited for Medical Equipment | XP Power introduces the CCR range of low-profile (... | 12312 | Product Release | Low-Profile AC-DC Power Supplies suited for Medical Equipment | XP Power introduces the CCR range of low-profile (25.4 mm) AC/DC power supplies with several cooling options and power ratings from 110 W to 420 W. Approved for use in medical and industrial applications, the units feature a baseplate-cooled design for effective thermal management and quiet operation, even in sealed enclosure environments. The CCR range is compliant for medical applications to IEC60601-1 Ed. 4 with primary to secondary isolation at 4000 V<sub>AC</sub> (2 x MOPPs) and 1 x MOOP from primary to earth (1800 V<sub>AC</sub>) and secondary to earth (1500 V<sub>AC</sub>). The CCR range accepts input voltages between 85 and 264 V<sub>AC</sub> and covers the common single rail outputs from 12 V<sub>DC</sub> to 54 V<sub>DC</sub>. Depending on the chosen cooling option – convection, conduction, or forced air – power ratings are CCR200 (110 W/170 W/200 W), CCR300 (160 W/250 W/300 W), and CCR420 (280 W/350W/420 W), respectively. All models have overvoltage protection, overload protection, and short circuit protection with trip and restart as standard, as well as over-temperature protection with auto reset. Featuring Class B conducted and radiated emissions, the CCR does not require external filtering. The units offer efficiencies of up to 94 % while operating in ambient temperatures from -40 °C to up to +80 °C with appropriate derating above +50 °C. | 11.02.2025 08:30:00 | Feb | news_2025-03-15_12.jpg | \images\news_2025-03-15_12.jpg | https://www.xppower.com/resources/press-releases/ac-dc-power-induction-convection-fan-cooled-medical-industrial | xppower.com |
| 1200 V Third Generation SiC MOSFET | SemiQ introduced the QSiC 1200V MOSFET, a third-ge... | 12293 | Product Release | 1200 V Third Generation SiC MOSFET | SemiQ introduced the QSiC 1200V MOSFET, a third-generation SiC device that shrinks the die size while improving switching speeds and efficiency. Compared to the company's second generation SIC MOSFETs the device is 20% smaller, targeting a diverse range of markets including EV charging stations, solar inverters, industrial power supplies and induction heating. In addition to having a V<sub>DS</sub> of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has an R<sub>DS(on)</sub> of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm³, which includes a reliable body diode and a driver-source pin for gate driving. KGD testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400 V, as well as being avalanche tested to 800 mJ and 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices. The Q<sub>RR</sub> is specified with 470 nC while the creepage distance is 9 mm. Continuously operating in the temperature range of -55 °C to +175 °C it has a recommended operational gate-source voltage of -4/18 V, with a V<sub>GSmax</sub> of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25 °C). For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26 K/W (40 K/W junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns. | 11.02.2025 08:30:00 | Feb | news_2025-03-01_11.jpg | \images\news_2025-03-01_11.jpg | https://semiq.com/semiq-1200-v-third-generation-sic-mosfet-cuts-size-while-improving-performance-and-reducing-switching-losses-in-high-power-applications/ | semiq.com |
| Registration opens for CWIEME Berlin 2025 | You can now register for the world's leading exhib... | 12290 | Event News | Registration opens for CWIEME Berlin 2025 | You can now register for the world's leading exhibition for the coil winding, electric motor, transformer, generator and e-mobility sectors, CWIEME Berlin. Held at Messe Berlin from June 3 to 5, 2025, the event brings together engineers, professionals and academics specialising in procurement, R&D and production management. More than 5,000 people are expected to attend CWIEME Berlin across the three days. The event is the perfect opportunity to witness the latest technological advancement from the world of electric motors, transformers, coil winding machinery and materials. Leading companies from around the world will gather to showcase their latest innovations. CWIEME Berlin is also a great opportunity to network with like-minded individuals from the industry. Over 70 experts will take to the stage to share their thoughts on the latest developments and trends in electrical engineering. Elsewhere, there will be dedicated workshops for the motor industry, and for attendees from the C-suite, with top-level outcomes shared on the main stage for a wider audience. | 10.02.2025 13:00:00 | Feb | news_2025-03-01_8.jpg | \images\news_2025-03-01_8.jpg | https://berlin.cwiemeevents.com/page/visitor-registration | berlin.cwiemeevents.com |
| International Workshop on Integrated Power Packaging | The 2025 IWIPP (PSMA/IEEE International Workshop o... | 12286 | Event News | International Workshop on Integrated Power Packaging | The 2025 IWIPP (PSMA/IEEE International Workshop on Integrated Power Packaging) brings together industry, academic and government researchers in the field of power components, electrical insulating materials, and packaging technologies to promote the advancement of power electronics. The IWIPP conference covers a broad range of topics, including materials, semiconductors and components; packaging, manufacturing, and semiconductor integration; reliability, thermal and electrical management; and converter and system integration. IWIPP 2025 will be held April 8th-10th, 2025, on the campus of the University of Alabama, Tuscaloosa, USA. IWIPP 2025 will feature keynote talks from experts in the packaging field, a range of technical sessions, and several networking opportunities. Now the online registration portal for IWIPP 2025 is open. The event is sponsored by IEEE Power Electronics Society (PELS), IEEE Electronics Packaging Society (EPS), IEEE Dielectrics and Electrical Insulation Society (DEIS) and Power Sources Manufacturers Association (PSMA). | 10.02.2025 09:00:00 | Feb | news_2025-03-01_4.jpg | \images\news_2025-03-01_4.jpg | https://iwipp.org/ | iwipp.org |
| Pilot Line for Power and more | The FAMES Pilot Line offers a complete set of tech... | 12268 | Industry News | Pilot Line for Power and more | The FAMES Pilot Line offers a complete set of technologies to develop advanced chip architectures. FAMES will open new research avenues for enhancing performance and lowering power consumption for mixed-signal circuits – and strengthening European sovereignty in microelectronics, CEA-Leti reported in a recent article. The FAMES Pilot Line focuses on five sets of technologies that will enable new chip architectures, and in terms of power this technology set is about small inductors to develop DC/DC converters for power-management integrated circuits (PMIC). The other four technology sets are FD-SOI for 10nm and 7nm, eNVM (embedded non-volatile memories), RF components and 3D integration technologies for 3D stacking. FAMES will provide open access to stakeholders across Europe and partner countries. Researchers, SMEs, and industrial companies can leverage the pilot line for circuit testing, design evaluation, and new technology development. The FAMES consortium that will support the initiative includes: the pilot line coordinator, CEA-Leti (France), imec (Belgium), Fraunhofer (Germany), Tyndall (Ireland), VTT (Finland), CEZAMAT WUT (Poland), UCLouvain (Belgium), Silicon Austria Labs (Austria), SiNANO Institute (France), Grenoble INP (France) and the University of Granada (Spain). | 07.02.2025 07:00:00 | Feb | news_2025-02-15_2.jpg | \images\news_2025-02-15_2.jpg | https://fames-pilot-line.eu/ | fames-pilot-line.eu |
| Power Company's CEO is about to Retire | Power Integrations announced that Balu Balakrishna... | 12271 | People | Power Company's CEO is about to Retire | Power Integrations announced that Balu Balakrishnan, the company's CEO since 2002, will retire from that role once a successor is in place. To ensure a smooth transition he will remain CEO until a successor is in the office. The company's board of directors has retained an executive search firm to assist in identifying its next CEO; both internal and external candidates will be considered. Mr. Balakrishnan, 70, intends to serve as executive chairman of the company's board for as long as is needed to ensure a smooth transition to his successor, and is expected to remain on the board of directors thereafter. Balu Balakrishnan joined Power Integrations in 1989, shortly after its formation, from National Semiconductor, where he was a product-line manager. He is the inventor of many Power Integrations products including TOPSwitch™, the company's first commercial product, followed by TinySwitch™, the first product to feature the company's EcoSmart™ technology for reducing standby-power waste. Mr. Balakrishnan served in a succession of executive roles before being named president and chief operating officer in 2001. In 2002 he was named CEO and joined the company's board of directors. He has been awarded more than 200 U.S. patents and has received numerous awards including the Discover Award for Technological Innovation in recognition of the environmental benefits of EcoSmart technology. | 06.02.2025 10:00:00 | Feb | news_2025-02-15_5.jpg | \images\news_2025-02-15_5.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-CEO-Balu-Balakrishnan-to-Retire/default.aspx | power.com |
| Mica Capacitors | Mica capacitors are valued for their stability and... | 12310 | Product Release | Mica Capacitors | Mica capacitors are valued for their stability and reliable performance across a wide range of applications. They maintain consistent electrical characteristics over time and across temperature variations, making them suitable for use in critical environments. Exxelia's silver mica capacitors are designed to offer performance, stability, precision and reliability, and include series designed as per MIL standards. These capacitors support voltage ratings up to 1kV DC and operating temperatures up to +150 °C. Custom designs are also available. The CMR series is available in the capacitance range from 1 pF to 12,000 pF with voltage ratings up to 500 V, while the MF series is specified from 4.7 pF to 33 nF with voltage ratings up to 1 kV. The members of the CA series show capacitance values from 0.005 nF to 0.1 µF and voltage ratings up to 1 kV. | 06.02.2025 06:30:00 | Feb | news_2025-03-15_10.jpg | \images\news_2025-03-15_10.jpg | https://exxelia.com/en/news/high-performance-silvered-mica-capacitors-for-rf-military-aerospace-applications | exxelia.com |
| High-Voltage, Wide-Bandwidth Differential Probe | Yokogawa Test & Measurement Corporation released i... | 12278 | Product Release | High-Voltage, Wide-Bandwidth Differential Probe | Yokogawa Test & Measurement Corporation released its PBDH0400 series differential probe with a maximum input voltage of 2000 V and a frequency bandwidth of 400 MHz. PBDH0400 series differential probes are able to deliver the measurements required for developing the next generation of higher speed power devices. Initially, two models of the PBDH0400 series will be available: the 702922 model with a maximum input voltage of 2000 V, and the 702921 with a maximum input voltage of 1000 V. The PBDH0400 series features the Yokogawa probe interface, which does not require an external power supply when connected to a Yokogawa oscilloscope. Furthermore, the probe attenuation ratio is automatically set through the interface so that measurement can start immediately after connection to the instrument. Combining the PBDH0400 with Yokogawa's 12-bit DLM5000HD or DLM3000HD oscilloscopes enables more accurate waveform measurements. Major target markets are in-vehicle electronic systems including inverters and motors as well as power electronics such as electronic devices, inverters, and power generation devices. Domestic electronic systems like household appliances and air conditioners – complemented by mechatronics, including industrial devices. The probes are suited for evaluation of high-speed, high-voltage switching signals exhibited by SiC devices and IGBTs within EV inverters as well as for power analysis and operational confirmation of SiC and GaN based power electronics. | 04.02.2025 11:30:00 | Feb | news_2025-02-15_12.jpg | \images\news_2025-02-15_12.jpg | https://tmi.yokogawa.com/news/press-releases/2025/yokogawa-test-measurement-releases-pbdh0400-series-high-voltage-wide-bandwidth-differential-probe/ | tmi.yokogawa.com |
| Strategic Partnership for the North American market | The current transducers from Danisense can be sour... | 12269 | Industry News | Strategic Partnership for the North American market | The current transducers from Danisense can be sourced in the US through GMW Associates "at very short lead times". With its know-how in sensors, transducers, test & measurement, instrumentation, as well as magnetics, GMW is able to provide Danisense's products to its customer base. GMW and Danisense share a partnership that already spans over more than 10 years. GMW has been calibrating current transducers for more than fifteen years. | 30.01.2025 08:00:00 | Jan | news_2025-02-15_3.jpg | \images\news_2025-02-15_3.jpg | https://gmw.com/electric-current-measurement/ | gmw.com |
| GaN predicted to reach Adoption Tipping Points in multiple Industries | In its 2025 predictions – GaN power semiconductors... | 12267 | Industry News | GaN predicted to reach Adoption Tipping Points in multiple Industries | In its 2025 predictions – GaN power semiconductors, Infineon highlights that "gallium nitride will be a game-changing semiconductor material revolutionizing the way we approach energy efficiency and decarbonization across consumer, mobility, residential solar, telecommunication, and AI data center industries". The relevance of comprehensive power systems will increase with GaN manifesting its role due to its benefits in efficiency, density, and size. Given that cost-parity with silicon is in sight, Infineon expects to see an increased adoption rate for GaN this year and beyond. Powering AI will be highly depending on GaN. By leveraging GaN, AI data centers can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid approaches combining GaN with Si and SiC are considered "ideal for meeting the requirements of AI data centers and achieving the best trade-offs between efficiency, power density and system cost". In the home appliance market, Infineon expects GaN to gain significant traction, driven by the need for higher energy efficiency ratings. Together with high-end SiC solutions, GaN will also enable more efficient traction inverters for both 400 V and 800 V EV systems, contributing to an increased driving range. In 2025 and beyond, robotics will see widespread adoption of GaN supported by the material's ability to enhance compactness, driving growth in delivery drones, care robots and humanoid robots. Integrating inverters within the motor chassis eliminates the inverter heatsink while reducing cabling to each joint/axis and simplifying EMC design. | 30.01.2025 06:00:00 | Jan | news_2025-02-15_1.jpg | \images\news_2025-02-15_1.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202501-049.html | infineon.com |
| Constant Current Stepper Motor Driver IC | Toshiba Electronics Europe has introduced the TB67... | 12282 | Product Release | Constant Current Stepper Motor Driver IC | Toshiba Electronics Europe has introduced the TB67S559FTG 50V/3.0A stepper motor driver IC that supports constant current control with built-in current detection. Housed in a 5.0 mm x 5.0 mm QFN32 package, the TB67S559FTG operates in the 8.2 V to 44 V output voltage range to cover 12 V, 24 V, and 36 V applications, including office automation (OA) equipment, point of sale (POS) terminals, vending machines, surveillance cameras, industrial equipment, and more. The TB67S559FTG represents a voltage and current rating upgrade to its pin/function compatible predecessor, the 40 V / 2.0 A TB67S539FTG, and offers an R<sub>DS(on)</sub> of 0.4 Ω (typ., covering the upper and lower transistor). When in sleep mode, the device draws a maximum current of 1 µA. The TB67S559FTG eliminates the need for external current sense resistors having built-in current detection circuitry. The built-in charge pump circuit does not require an external capacitor. | 28.01.2025 15:30:00 | Jan | news_2025-02-15_16.jpg | \images\news_2025-02-15_16.jpg | https://toshiba.semicon-storage.com/eu/company/news/2025/01/motor-driver-20250128-1.html | toshiba.semicon-storage.com |
| Power Factor Correction Chokes for 1-5 kW Range | ITG Electronics offers several mid-tier power fact... | 12280 | Product Release | Power Factor Correction Chokes for 1-5 kW Range | ITG Electronics offers several mid-tier power factor correction chokes (PFCs) suitable for applications with continuous conduction requirements in the 1,000-5,000 W range. The company's PFC219167D Series are designed to meet AC to DC converter needs for the industrial, equipment and automotive sectors. PFC219167D Series solutions are viable for inductance ranges from 107–2,200 µH, and can handle DC voltage surges up to 400 V. With a maximum length/width of 55.5 mm x 55.5 mm and a maximum height of 42.5 mm the PFC chokes also offer an alloy powder-based DIP Inductor. The chokes can handle up to 61 A with approximately 50% roll off. | 27.01.2025 13:30:00 | Jan | news_2025-02-15_14.jpg | \images\news_2025-02-15_14.jpg | https://www.itg-electronics.com/en/series/946 | itg-electronics.com |
| POL Converters in SIP-3 Packages | TRACO Power released the TSR 2N & TSR 3N POL conve... | 12277 | Product Release | POL Converters in SIP-3 Packages | TRACO Power released the TSR 2N & TSR 3N POL converters, which are members of a step-down switching regulator series designed as a drop-in replacement for any TO-220 package linear regulators. Complementing TRACO Power's latest generation of converters these models offer a DC input range of 4.6 – 36 V. The design allows full load operation from –40 °C to +95 °C ambient without the need of a heat sink or forced cooling. The TSR 2N and TSR 3N switching regulators feature short circuit protection, current limitation and under voltage lockout for a broad application range in many environments, especially high-volume projects where the series will help to reduce production costs. The devices operate with efficiencies of up to 95 %. | 27.01.2025 10:30:00 | Jan | news_2025-02-15_11.jpg | \images\news_2025-02-15_11.jpg | https://www.tracopower.com/int/txo | tracopower.com |
| Step-Down DC/DC Converters with “lowest Quiescent Current” | Nexperia introduced a series of step-down DC/DC co... | 12264 | Product Release | Step-Down DC/DC Converters with “lowest Quiescent Current” | Nexperia introduced a series of step-down DC/DC converters for designing various fixed and portable battery-powered applications across consumer, industrial and automotive end-markets. For example, the NEX30606 is a step-down converter that offers a choice of 16 resistor-settable output voltages from input voltages ranging from 1.8 V to 5.0 V. It can deliver up to 600 mA of output current and offers “the industry’s lowest operating quiescent current” (Iq) of 220 µA. This feature is important e. g. for wearable consumer applications like hearing aids, medical sensors, patches and monitors in addition to battery-powered industrial applications like smart meters, asset-tracking and industrial (IIOT) and narrow-band internet-of-things (NBIOT) devices. This device provides >90 % switching efficiency for load currents ranging from 1 mA to 400 mA and has only 10 mV of output voltage ripple when stepping down from 3.6 V V<sub>in</sub> to 1.8 V<sub>out</sub>. The NEX40400 step-down converter operates with a quiescent current of 60 µA typ., and it can provide up to 600 mA output from a 4.5 V to 40 V input range. Featuring PFM (Pulse Frequency Modulation) for high efficiency at low to mid loads and Spread Spectrum Technology for minimizing EMI, the converter is suited for industrial distributed power systems and grid infrastructure (e. g. smart e-meters) as well as consumer white goods. Low shutdown supply current (0.3 µA) also makes this converter suitable for use in battery-powered home appliances. Nexperia also plans to release an AEC-Q100 qualified version of the NEX40400 later in 2025. | 26.01.2025 12:30:00 | Jan | news_2025-02-01_13.jpg | \images\news_2025-02-01_13.jpg | https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-step-down-DC-DC-converters-with-lowest-quiescent-current-enhance-design-flexibility- | nexperia.com |
| Funding secured to make “SiC Chips 30 % cheaper” | mi2-factory GmbH, a high-tech start-up in the fiel... | 12254 | Industry News | Funding secured to make “SiC Chips 30 % cheaper” | mi2-factory GmbH, a high-tech start-up in the field of semiconductor equipment, announced the closing of a EUR 15 million Series A financing round and the approval of a public grant from the ICPEI ME/CT program of up to EUR 23 million. The Belgian Ion Beam Applications S.A. (IBA) and the public investment company Wallonie Entreprendre International together with Beteiligungsmanagement Thüringen and a family office, are investing a total of EUR 15 million in mi2-factory. The Federal Ministry for Economic Affairs and Climate Action (BMWK) and the Free State of Thuringia are providing on top a total of EUR 23 million in public funds from the IPCEI ME/CT program. The investment and funding will enable the scale up of the patented proprietary EFIITRON technology from today`s laboratory pilot to industrial maturity and showcase its first industrial use. Chip manufacturers will use EFIITRON in the future to reduce chip costs, increase reliability and realize new component and wafer architectures. EFIITRON is claimed to provide “unprecedented precision and flexibility of deep doping in SiC”, which is said to enable a cost reduction of up to 30 % for silicon carbide chips. mi2-factory has set itself the long-term goal of processing more than 30 % of all SiC wafers in the market with EFIITRON systems. | 23.01.2025 08:00:00 | Jan | news_2025-02-01_3.jpg | \images\news_2025-02-01_3.jpg | https://mi2-factory.com/2025/01/23/mi2-factory-secures-series-a-financing-and-ipcei-me-ct-funding-for-novel-efiitron-semiconductor-processing-technology/ | mi2-factory.com |
| Ultra-Low Loss Shielded Power Inductors | The ultra-low profile XGL3020 power inductor serie... | 12274 | Product Release | Ultra-Low Loss Shielded Power Inductors | The ultra-low profile XGL3020 power inductor series from Coilcraft is claimed to offer "the lowest DC losses and extremely low AC losses for a wide range of DC/DC converters". This characteristic makes them well suitable for a variety of applications where space is limited and efficient power management is critical, including different non-isolated converter topologies, point-of-load (POL), IoT devices, and many other applications. The devices are integrated in a package measuring 3 mm x 3 mm x 2 mm. With an 80 V voltage rating, these components are suitable for wide V<sub>in</sub> DC/DC converters and applications. Additionally, their AEC-Q 200 qualification in the temperature range –40 °C to +125 °C with a 165 °C maximum part temperature provides reliability and robustness in automotive and other harsh environments. The components are available in the inductance range from 0.10 to 4.5 µH for current ratings up to 14.8 A with soft saturation. | 23.01.2025 07:30:00 | Jan | news_2025-02-15_8.jpg | \images\news_2025-02-15_8.jpg | https://www.coilcraft.com/en-us/products/power/shielded-inductors/molded-inductor/xgl/xgl3020/ | coilcraft.com |
| Protecting HVDC Networks: 50 kV DC Breaking | SuperGrid Institute has validated its resistive su... | 12253 | Industry News | Protecting HVDC Networks: 50 kV DC Breaking | SuperGrid Institute has validated its resistive superconducting fault current limiter (RSFCL) technology combined with a mechanical DC circuit breaker in major tests at 50 kV. The current was limited by 87 % compared with the prospective current. With these tests, SuperGrid Institute has paved the way for a new breaking option to protect high-voltage direct current (HVDC) networks. The “compact”, environmentally-friendly technology reduces the size of DC protection equipment on the ground by 40-50 %, by incorporating a simplified mechanical DC circuit breaker with the RSFCL which uses as many standardized components as possible in a gas-insulated environment (GIS). This is not only a significant advantage for offshore platforms but also provides cost savings. In addition, resistive superconducting fault current limiters are fully compatible with AC networks. When the voltage was raised to 50 kV DC and with 1.8 MJ injected during a test the RSFCL managed to limit the current to 5.5 kA, while the prospective current was 43 kA<sub>p</sub>. The DC circuit-breaker then cut off the fault current. | 23.01.2025 07:00:00 | Jan | news_2025-02-01_2.jpg | \images\news_2025-02-01_2.jpg | https://www.supergrid-institute.com/2025/01/20/supergrid-institute-first-50kv-dc-breaking-combining-superconducting-fault-current-limiter-circuit-breaker/ | supergrid-institute.com |
| Software Drives FOC Motors Without Shunts or Sensors | Power Integrations announced MotorXpert™ v3.... | 12258 | Product Release | Software Drives FOC Motors Without Shunts or Sensors | Power Integrations announced MotorXpert™ v3.0, a software suite for configuration, control and sensing of BLDC inverters that utilize the company’s BridgeSwitch™ motor-driver ICs. The latest release of the software incorporates Power Integrations’ shuntless and sensorless technology for field-oriented control (FOC), adding support for advanced modulation schemes and unconditional startup under any load condition, along with significant improvements to the host user interface and debugging tools. MotorXpert 3.0 comprises three main sections: Specific mathematical algorithms resident on the local MCU or DSP construct accurate feedback signals from the BridgeSwitch IC and provide real-time control of the switching patterns. The second section is a host-side application which interprets inverter actions and displays critical data in actionable format for engineering analysis. Being the third main section the control interface permits development engineers to experiment and directly converge to a final product. The MotorXpert suite is MCU-agnostic and includes a comprehensive porting guide to simplify deployment with a wide range of MCUs. It is implemented in common C language to MISRA standards. The MotorXpert v3.0 host-side application includes a GUI with a digital oscilloscope visualization tool that enables engineers to design and configure parameters and operation and simplifies debugging. Parameter tool tips and a tuning assistant help during the development process, and the parameter list provides easy motor tuning. The 3.0 version also features both V/F and I/F control, which permits motor startup in any load condition. A selectable two-phase modulation scheme allows developers to trade off temperature of the inverter vs torque ripple. | 23.01.2025 06:30:00 | Jan | news_2025-02-01_7.jpg | \images\news_2025-02-01_7.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-Latest-MotorXpert-Software-Drives-FOC-Motors-Without-Shunts-or-Sensors/default.aspx | power.com |
| Fourth-Generation SiC MOSFET Technology | Wolfspeed has unveiled details about its fourth-ge... | 12252 | Industry News | Fourth-Generation SiC MOSFET Technology | Wolfspeed has unveiled details about its fourth-generation silicon carbide MOSFET technology. Targeted at high-power automotive, industrial, and renewable energy systems, “Gen 4 MOSFETs constitute a paradigm change in SiC technology”, claims Dr. Adam Barkley, VP, Power Technology Development at Wolfspeed. “These devices provide a versatile foundation enabling a long-term road map of application-optimized bare die, module, and discrete products. Every Gen 4-based design focuses on three performance vectors: holistic system efficiency, remarkable durability, and low system cost—all of which let designers reach before unheard-of performance and value.” Wolfspeed’s Gen4 MOSFETs reduce this high temperature specific on-state resistance by up to 21 %, with even more reduction at lower temperature. Simultaneously, the reverse recovery “is much softer, resulting in lower di/dt and significantly reduced voltage overshoot: about 900 V, corresponding to a 75 % reduction”. This provides a 300 V margin below the 1,200 V rating. Gen 4 technology improves the performance of hard-switching applications with up to 15 % lower EON and EOFF, while conduction losses in soft and hard-switching applications can be mitigated with up to 21 % reduction in RSP at operating temperature (with 175 °C R<sub>DS(on)</sub> ). Gen 4 MOSFETs are designed with enhanced immunity, achieving up to 100× reduction in cosmic rays failure-in-time (FIT) rates compared to previous generations. “Additionally, they can survive overload and overstress events, with Wolfspeed die portfolio qualified for continuous operation at 185 °C and limited life operation at 200 °C”, Dr. Barkley says. | 22.01.2025 06:00:00 | Jan | news_2025-02-01_1.jpg | \images\news_2025-02-01_1.jpg | https://www.wolfspeed.com/company/news-events/news/wolfspeed-launches-new-gen-4-mosfet-technology-platform-to-deliver-breakthrough-performance-in-real-world-conditions-for-high-power-applications/ | wolfspeed.com |
| Nanocrystalline Inductors to reduce I/O and DC Line Noise | TTI IP&E – Europe now delivers the FW series of na... | 12281 | Product Release | Nanocrystalline Inductors to reduce I/O and DC Line Noise | TTI IP&E – Europe now delivers the FW series of nanocrystalline inductors from its franchisee Chemi-Con. The material's high magnetic permeability reduces the core volume, while enabling a lower number of copper wire turns needed to achieve a high performance, small size, and lightweight design. The common mode choke coils can be used as input/output and DC line noise filters in various power source applications. Since the curie temperature (magnetic transition temperature) is at 570 °C, the coil's characteristics are maintained even in high-temperature environments such as automotive applications. With a maximum resistance of 1.2 to 26 mΩ the coil may be used in power sources for medical equipment, communication base stations, and industrial equipment. Compared to the conventional FL-V series coils, the magnetic permeability of the FW series at 10 kHz has improved by approximately 150 % (from 3.2 to 37.1 mH), while maintaining a permeability of 1.0 to 11.5 mH at 100 kHz. Additionally, the impedance in the range from 150 kHz to 1 MHz has improved. The FW series nanocrystalline coils and cores can provide continuous operation 24/7. Other features include operation in the –40 °C to +130 °C temperature range, AEC-Q200 compliance, and UL 94V-0 Type B (+130 °C) flammability and insulation rating. | 21.01.2025 14:30:00 | Jan | news_2025-02-15_15.jpg | \images\news_2025-02-15_15.jpg | https://www.ttieurope.com/content/ttieurope/en/manufacturers/c-e/chemi-con.html | ttieurope.com |
| Low-Loss SiC MOSFETs target Renewables, Energy Storage and EV Charging Applications | SemiQ has announced a family of 1700 V SiC MOSFETs... | 12263 | Product Release | Low-Loss SiC MOSFETs target Renewables, Energy Storage and EV Charging Applications | SemiQ has announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV charging, uninterruptable power supplies, and induction heating/welding. The QSiC™ 1700 V switching planar D-MOSFETs feature a body diode, capable of operation at up to 175 oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ. The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H). The QSiC 1700 V series' bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25 oC, 61 A at 100 oC) and a pulsed drain current of 250 A (at 25 oC). They also feature a gate threshold voltage of 2.7 V (at 25 oC, 2.1 V at 125 oC), an R<sub>DSON</sub> of 31 mΩ (at 25 oC, 57 mΩ at 125 oC), 10n A gate source leakage current and a reverse recovery time (t<sub>RR</sub>) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27 oC/W. | 21.01.2025 11:30:00 | Jan | news_2025-02-01_12.jpg | \images\news_2025-02-01_12.jpg | https://semiq.com/semiq-qsic-1700-v-series-of-high-reliability-low-loss-sic-mosfets-target-renewables-energy-storage-and-ev-charging-applications/ | semiq.com |
| Swiss Company opened Hong Kong Office | Schurter has opened an office in Hong Kong. Steffe... | 12270 | Industry News | Swiss Company opened Hong Kong Office | Schurter has opened an office in Hong Kong. Steffen Lindner, General Manager and Vice President EMEA, and Oswald Fiegl, Group COO, conveyed their best wishes on behalf of Group CEO Lars Brickenkamp for the opening of the Hong Kong office and praised the excellent performance of the Asian region in 2024. According to Oswald Fiegl, Schurter "is committed to developing China and India into SCHURTER Group's operational bases in Asia to enhance our ability to serve the market and our customers". | 21.01.2025 09:00:00 | Jan | news_2025-02-15_4.jpg | \images\news_2025-02-15_4.jpg | https://www.schurter.com/en/news/the-grand-opening-of-schurters-hong-kong-office | schurter.com |
| GaN-Based Motor Drive Reference Design for Humanoid Robots | Efficient Power Conversion Corporation (EPC) launc... | 12275 | Product Release | GaN-Based Motor Drive Reference Design for Humanoid Robots | Efficient Power Conversion Corporation (EPC) launched the EPC91104, a 3-phase BLDC motor drive inverter reference design. This design is specifically suited for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements. The EPC91104 evaluation board uses the EPC23104 ePower™ Stage IC, offering a maximum R<sub>DS(on)</sub> of 11 mΩ and supporting DC bus voltages up to 80 V. The design supports up to 14 A<sub>peak</sub> steady-state and 20 A<sub>peak</sub> pulsed current, ensuring the performance for humanoid robot applications that require fine motor control and precision. The Designs operates in the voltage range between 14 V and 80 V, accommodating a variety of battery systems and is suitable for space-constrained robotics. It includes overcurrent and input undervoltage protection, ensuring reliability in demanding applications. For higher-current requirements, such as elbow and knee motors in humanoid robots, EPC offers the EPC9176 board in the same family. With enhanced current capacity, the EPC9176 complements the EPC91104 to cover a full range of motor drive applications in humanoid robotics. The EPC91104 is compatible with controller boards from leading manufacturers, including Microchip, Texas Instruments, STMicroelectronics, and Renesas. It is equipped with several sensing and protection features as well as with features for rapid prototyping and testing. | 21.01.2025 08:30:00 | Jan | news_2025-02-15_9.jpg | \images\news_2025-02-15_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3191/new-gan-based-motor-drive-reference-design-optimized-for-precision-motion-in-humanoid-robots | epc-co.com |
| Integrated Full-Bridge DC Motor Driver with real-time Diagnostics | STMicroelectronics’ VNH9030AQ integrated full-brid... | 12266 | Product Release | Integrated Full-Bridge DC Motor Driver with real-time Diagnostics | STMicroelectronics’ VNH9030AQ integrated full-bridge DC motor driver handles diverse automotive uses including functional-safety applications. As well as integrating advanced diagnostics, the driver has a dedicated pin for real-time output status that saves external circuitry and slims the bill of materials. With R<sub>DS(on)</sub> of 30 mΩ per leg, the VNH9030AQ handles mid- and low-power DC-motor driven applications such as door-control modules, washer pumps, powered lift gates, powered trunks, and seat adjusters. Integrated non-dissipative current-sense circuitry monitors the current flowing through the device to distinguish each motor phase. The VNH9030AQ integrates the high-side and low-side MOSFETs with gate drivers, diagnostics, and protection against overvoltage transients, undervoltage, short-circuit conditions, and cross conduction. Flexibility to configure the MOSFETs either in parallel or in series allows use in systems involving multiple motors or to meet other specific requirements. All products feature a 6 mm x 6 mm thermally enhanced triple-pad QFN package designed for underside cooling and share a common pinout to ease layout and software reuse. | 20.01.2025 14:30:00 | Jan | news_2025-02-01_15.jpg | \images\news_2025-02-01_15.jpg | https://community.st.com/t5/developer-news/vipower-full-bridge-with-real-time-diagnostics-reduces/ba-p/762419 | st.com |
| Vibration-resistant Capacitors | All SMT variants of the Aluminum Electrolyte and A... | 12279 | Product Release | Vibration-resistant Capacitors | All SMT variants of the Aluminum Electrolyte and Aluminum Hybrid Polymer capacitors from Würth Elektronik are now available in an extremely vibration-resistant version on request. Using enlarged solder pads and thicker base plates, the capacitors can withstand accelerations up to 30 g (294 m/s²). Electronics must continue to function reliably, even when exposed to strong mechanical stress. This is the case with electronically controlled tools, industrial applications, construction machinery, or drones, for example. SMT components are often not the best choice here, because without special adaptations, they may not withstand the prolonged vibration stress. Especially larger components then quickly reach their limits, because they can detach from the circuit board under continuous load and cause the electronics to fail. However, making electronics vibration-resistant does not necessarily require special connection techniques like press-fitting. The vibration-resistant versions of the Würth Elektronik capacitors feature larger solder pads for a more stable connection to the circuit board and an extra-high base for improved support and vibration damping. To maintain optimal temperature management, the manufacturer has provided the base of these capacitors with special cut-outs. The capacitors are tested under conditions that go beyond the requirements of IEC 60384-4: The components must remain securely attached to the circuit board for twelve hours (four hours per axis) under vibration in the frequency range between 10 Hz and 2 kHz with an amplitude of 0.75 mm. The final electrical tests then confirm their functionality. The vibration-resistant capacitors can be processed on standard SMT production lines. | 20.01.2025 12:30:00 | Jan | news_2025-02-15_13.jpg | \images\news_2025-02-15_13.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=vibration-resistant-capacitors | we-online.com |
| Automotive Power Management IC | Infineon Technologies is expanding the OPTIREG&tra... | 12276 | Product Release | Automotive Power Management IC | Infineon Technologies is expanding the OPTIREG™ PMIC (Power Management) family with the OPTIREG PMIC TLF35585, an integrated multi-rail power supply solution for demanding automotive systems. The TLF35585 provides a power supply for AURIX and other microcontrollers. The power supply solutions are suited for functional safety applications in harsh automotive environments, particularly in the chassis, powertrain, domain control and transmission areas. The OPTIREG PMICs enable voltage regulation with pre- and post-regulator architectures with DC/DC and linear regulators as well as trackers. In addition to the power supply, additional monitoring and control functions are integrated, enabling users to develop automotive ECUs for safety-related applications. The TLF35585 PMIC includes a boost buck pre-regulator that supplies the post-regulator rails for the microcontroller supply, communication supply and a voltage reference. It also provides two trackers that follow the voltage reference to supply off-board sensors. The main supervision functions of the TLF35585 include a configurable window watchdog (time-based trigger), a function watchdog (question and response-based trigger), error pin monitoring as well as voltage monitoring. For the interaction with microcontrollers, a 16-bit SPI, interrupt and reset function are also available. The device complies with ISO 26262 for systems up to ASIL D and supports an extended junction temperature range of up to 175 °C. The IC integrates a state machine and a wake-up concept with timer and a stand-by regulator. TLF35585 is available in either a small VQFN-48 package or a TQFP-48 package – both packages are thermally enhanced and fully AEC-Q100 qualified (Grade 0). | 20.01.2025 09:30:00 | Jan | news_2025-02-15_10.jpg | \images\news_2025-02-15_10.jpg | https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFATV202502-052.html | infineon.com |
| Increased Power Density and Thermal Performance | Vincotech released "<i>flow</i> E3BP", an advancem... | 12273 | Product Release | Increased Power Density and Thermal Performance | Vincotech released "<i>flow</i> E3BP", an advancement of the company's <i>flow</i> 2 and <i>flow</i> E3 housing. Featuring a specially treated surface, its convex baseplate provides a better thermal contact to better disperse heat and handle more power with a smaller footprint. The module's CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Developed with the increasingly challenging demands of renewable energy systems in mind, the <i>flow</i> E3BP enables engineers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30 % of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34 % compared to <i>flow</i> E3, thereby increasing power density to 51 %. Chosen for its low inductivity, the new <i>flow</i> E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today's <i>flow</i> E3BP housing meets tomorrow's 2000 V systems' high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control. Currently Vincotech offers 24 options rated from less than 10 kW up to MW. The <i>flow</i> 2, <i>flow</i> S3, and <i>flow</i> E3 housings see wide use in solar and ESS applications. | 20.01.2025 06:30:00 | Jan | news_2025-02-15_7.jpg | \images\news_2025-02-15_7.jpg | https://www.vincotech.com/products/by-housing/housing/flow-e3bp.html | vincotech.com |
| APEC 2025 Plenary Session Speakers to Keynote the Conference’s 40th Anniversary | The APEC 2025 Conference Committee for the annual ... | 12257 | Event News | APEC 2025 Plenary Session Speakers to Keynote the Conference’s 40th Anniversary | The APEC 2025 Conference Committee for the annual Applied Power Electronics Conference has announced that four plenary speakers are scheduled to keynote its 40th anniversary program. The Plenary Session for APEC 2025 (March 16-20, Atlanta) will take place Monday afternoon, March 17th, in the Georgia Congress Center’s from 1:30 to 4:30 PM. The Plenary Session will open with a welcome message by APEC 2025 General Chair Aung Thet Tu, followed by plenary introductions by APEC 2025 Program Chair Jin Wang. Designed to engage a global audience hailing from all sectors of the power electronics industry, the sessions will include interactive Q&As at the end of each presentation. After the Plenary Session, all registered APEC attendees are invited to attend the Welcome Reception in Exhibit Hall being held from 4:30 to 7:30 PM. The APEC 2025 Plenary Session speakers and presentations are:<br>- A Technology’s Journey: 40 Years of APEC by John G. Kassakian, Professor of Engineering, Emeritus, Massachusetts Institute of Technology (The first and second APEC General Chair, 1986 and 1987).<br>- Emerging Applications for Power Electronics in Efficient, Resilient Buildings by Wyatt Merrill, Technology Manager for Solid-State Lighting and Building Electric Appliances, Devices and Systems (BEADS), US Department of Energy.<br>- The Role of Power Electronics in Achieving a Sustainable Hydrogen Economy by Francisco Canales, Corporate Research Fellow, ABB Switzerland, Ltd.<br>- Integrated Magnetics and Heterogenous Integration Enabling Vertical Power Delivery for High Performance Computing by Cian Ó Mathúna, Research Director, Integrated Power and Energy Systems Embedded and Integrated Magnetics, Tyndall National Institute. | 15.01.2025 11:00:00 | Jan | news_2025-02-01_6.jpg | \images\news_2025-02-01_6.jpg | https://apec-conf.org/attendees/sessions-seminars/plenary-session/ | apec-conf.org |
| Backend Fab in Thailand | Infineon Technologies has broken ground for a semi... | 12255 | Industry News | Backend Fab in Thailand | Infineon Technologies has broken ground for a semiconductor backend production site in Samut Prakan, south of Bangkok. The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. The project is supported by the Thailand Board of Investment (BOI). Infineon said it will support developing a robust semiconductor ecosystem in Thailand covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company intends to strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites. | 14.01.2025 09:00:00 | Jan | news_2025-02-01_4.jpg | \images\news_2025-02-01_4.jpg | https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202501-038.html | infineon.com |
| Design with GaN for High-Performance Motor Drives | Efficient Power Conversion Corporation (EPC) intro... | 12259 | Product Release | Design with GaN for High-Performance Motor Drives | Efficient Power Conversion Corporation (EPC) introduces the EPC91200, a fully configured motor drive inverter reference design that delivers performance and flexibility for a variety of industrial and battery-powered applications. The EPC91200 is designed for 3-phase brushless DC (BLDC) motor drive applications and features the EPC2305, a 150 V 3.0 mΩ R<sub>DS(on)</sub> GaN FET. The EPC91200 supports voltage ranges from 30 V to 130 V, making it suitable for 80 V and 110 V battery systems commonly used in industrial automation, agricultural machinery, and material handling equipment like forklifts. It supports up to 60 A<sub>pk</sub> (40 A<sub>RMS</sub>) maximum output current with a switching frequency of up to 150 kHz, while its PCB layout and GaN technology reduce resistance and heat generation. Current sensing, voltage monitoring, overcurrent protection, and temperature sensing for robust operation are included. It works with multiple controller boards from leading manufacturers like STMicroelectronics, Texas Instruments, and Microchip. The EPC91200 provides features tailored for quick deployment and evaluation. Its PCB (130 mm x 100 mm) includes a pre-configured shaft encoder/Hall sensor interface and supports Field-Oriented Control (FOC) techniques. Engineers can directly measure critical signals and optimize system performance using built-in test points. | 14.01.2025 07:30:00 | Jan | news_2025-02-01_8.jpg | \images\news_2025-02-01_8.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3190/design-with-gan-for-high-performance-motor-drives-for-high-voltage-battery-applications | epc-co.com |
| Leadership Transition | As David (“Dave”) Heinzmann, President and Chief E... | 12256 | People | Leadership Transition | As David (“Dave”) Heinzmann, President and Chief Executive Officer of Littlefuse, has decided to retire, the Board has appointed Dr. Greg Henderson, a member of the Littelfuse Board of Directors, as President and Chief Executive Officer effective February 10, 2025. However, Dave Heinzmann will remain on the Littelfuse Board through April 2025 and, to support a seamless transition, serve as an advisor to the Company through August 10, 2025. Dr. Greg Henderson, 56, has been a member of the Littelfuse Board of Directors since May 2023. From 2017 to 2024, Dr. Henderson served as the Senior Vice President of the Automotive & Energy, Communications, and Aerospace Group for Analog Devices. Previously, he served as VP of the RF and Microwave Business for ADI from 2014 to 2017, and as VP of the RF and Microwave Business for Hittite Microwave Corporation until its acquisition by ADI in 2014. Before joining Hittite, Dr. Henderson held various positions at Harris Corporation, Tyco Electronics, TriQuint Semiconductor, and IBM. Dr. Henderson holds a bachelor’s degree in electrical engineering from Texas Tech University and a Ph.D. in electrical engineering from the Georgia Institute of Technology. | 13.01.2025 10:00:00 | Jan | news_2025-02-01_5.jpg | \images\news_2025-02-01_5.jpg | https://investor.littelfuse.com/news/news-details/2025/Littelfuse-Announces-CEO-Retirement-and-Leadership-Transition/ | littelfuse.com |
| Power Module Series in LGA-12EP | With MagI<sup>3</sup>C-VDLM, Würth Elektronik pres... | 12260 | Product Release | Power Module Series in LGA-12EP | With MagI<sup>3</sup>C-VDLM, Würth Elektronik presents three power modules in the LGA-12EP package for the 24 V industrial power bus. The modules are characterized by high resilience to voltage transients on the 24 V bus and a wide input-voltage range from 3.5 V to 38 V. The module, measuring 10 × 6 × 3.1 mm<sup>3</sup>, is available with an output current of 1, 2, or 3 A. The MagI<sup>3</sup>C-VDLM series of power modules offers a fully integrated DC/DC power supply that combines all essential components in a compact package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power module maintains a constant, selectable PWM switching frequency across the operating range, thereby optimizing output ripple for sensitive and precise applications. It achieves peak efficiency up to 94 %. The MagI<sup>3</sup>C-VDLM power modules are designed for use in point-of-load DC/DC applications on 24 V, 12 V, and 5 V buses. Typical applications include test and measurement technology, medical technology, industrial electronics, and telecommunications. The module is e. g. suited for supplying interfaces, microcontrollers, microprocessors, digital signal processors, and field-programmable gate arrays. Its EMC behavior complies with the EN55032 Class B / CISPR-32 standard. | 11.01.2025 08:30:00 | Jan | news_2025-02-01_9.jpg | \images\news_2025-02-01_9.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=magi3c-vdlm | we-online.com |
| Sebastian Fischer appointed CEO of Traco Power Group | As part of a future-oriented growth strategy, Seba... | 12243 | People | Sebastian Fischer appointed CEO of Traco Power Group | As part of a future-oriented growth strategy, Sebastian Fischer has taken over the position of CEO of the Traco Power Group on January 1, 2025. Together with an experienced Group Management Team, he will drive the further development of the company. As before, Jennifer Caspar, company owner and Chair of the Board of Directors, together with her father Rolf Caspar and Ueli Wampfler, both members of the Board of Directors, will continue to focus on the strategic direction of the group. After more than a decade of successfully managing Traco Power Germany, Sebastian Fischer moved to the Swiss headquarters at the end of 2023, where he took on the role of Chief Commercial Officer (CCO). In this role, he managed all subsidiaries of the Traco Power Group and was responsible for the group-wide revenue and all commercial activities of the Traco Power Group. As of January 1, 2025, Fischer handed over his responsibilities as CCO to Florian Haas, who has successfully managed product management, IT and marketing in the Traco Power Group for seven years. Before joining Traco Power, Sebastian Fischer held senior management positions in industry, with a focus on technology-oriented areas. He graduated from Munich University of Applied Sciences in 2004 with a degree in electrical engineering and electronics, followed by an MBA. He completed a postgraduate course in business law at the University of Hagen in 2015. | 10.01.2025 13:00:00 | Jan | news_2025-01-15_6.jpg | \images\news_2025-01-15_6.jpg | https://www.tracopower.com/de/sebastian-fischer-appointed-new-ceo-traco-power-group | tracopower.com |
| 100 V N-Channel MOSFETs | Renesas introduced 100 V high-power N-Channel MOSF... | 12265 | Product Release | 100 V N-Channel MOSFETs | Renesas introduced 100 V high-power N-Channel MOSFETs for applications such as motor control, battery management systems, power management and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS) and more. The company has developed its REXFET-1 MOSFET wafer manufacturing process that enables the devices “to reduce on-resistance by 30 %”. The REXFET-1 process also enables the MOSFETs to offer a 10 % reduction in Q<sub>g</sub> characteristics (the amount of charge needed to apply voltage to a gate), and a 40 % reduction in Q<sub>gd</sub> (the amount of charge that needs to be injected into the gate during the "Miller Plateau" phase). The RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50 % smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection. | 09.01.2025 13:30:00 | Jan | news_2025-02-01_14.jpg | \images\news_2025-02-01_14.jpg | https://www.renesas.com/en/about/newsroom/renesas-introduces-new-mosfets-exceptional-performance | renesas.com |