Bodo's WBG Features

On this page I am sharing contributions on one of my key focuses, wide bandgap (WBG) semiconductors for future improvement of system design. These might be event presentations or topic-related webinars, mostly in video format. SiC and GaN, together with the corresponding passive devices, are paving the way to more efficiency.

 

Power Conference Virtual Event

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Power Electronics is rapidly moving towards Wide Bandgap, because the key for the next essential step in energy efficiency lies in the use of new materials, such as GaN (gallium nitride) and SiC (silicon carbide) which allow for greater power efficiency, smaller size, lighter weight and lower overall cost. Wide Bandgap Semiconductors are transforming power electronics designs across many applications such as data centers, renewable energy, automotive and many more. The event not only explained why, how and where this is happening, but also offered the opportunity to meet industry experts, gather information and share knowledge & experiences.

SiC Enabling Long Term Global Market Growth
  • Power Conference Virtual Event
  • 2020-12-08

Guy Moxey, Senior Director of Power Products, Wolfspeed: It is widely realized that SiC is now an established technology that is transforming the power industry in many applications across the industrial, energy and automotive segments - from watts to megawatts. So the conversations within the market are no longer what is SiC or how do I use it? The conversations now have pivoted to how do I ensure getting continuity of supply and what is the long term reliability of this technology. Reliability is not just qualification, supply assurance is not just product today. In this presentation Wolfspeed discusses the mechanisms behind its SiC qualification, realization of differences between SiC and silicon with regards to qual & rel, its compressive proven long term reliability and how this related to a 30X increase in both material and end wafer fabrication over the next series of years.

Send your question to: ask-wolfspeed@bodospower.com.

New Generation of SiC Power Devices for Industrial and Automotive Applications
  • Power Conference Virtual Event
  • 2020-12-08

Ignacio Lizama,  Field Application Engineer, ROHM: In many power electronics-based applications, requirements like space, weight and high efficiency play an increasing role. With this development is mind, ROHM has expanded its SiC MOSFET device portfolio with the latest generation of SiC devices, where the new devices enables faster switching speeds and lower switching losses. Together with this line-up expansion, the benefits of the new generation of SiC devices are presented.

Send your question to: ask-rohm@bodospower.com.

1.2kV SiC Power MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability
  • Power Conference Virtual Event
  • 2020-12-08

Stephan Wirths, R&D Senior Engineer, Hitachi ABB Power Grids: Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We have developed a high-k gate stack technology on SiC that shows significantly reduced density of interface states (Dit) and consequently substantially improved on-state performance for 1.2kV SiC MOSFETs. Additionally, we have demonstrated superior threshold voltage (VTH) stability, i.e. virtually no VTH-shift during static characterization as function of the starting gate voltage and its ramp. These developments have been recently awarded with the IEEE ISPSD 2020 poster award.

Send your question to: ask-abb@bodospower.com.

750V Gen 4SiC FETs Enable Higher Efficiency power Designs
Learn more:
unitedsic.com
  • Power Conference Virtual Event
  • 2020-12-08

Anup Bhalla, VP of Engineering, UnitedSiC: The introduction of the UnitedSiC Gen 4 750V SiC FETs, based on an advanced JFET technology with an R(DS)A of only 0.7mohm-cm2, includes multiple new SiC FETs with breakthrough cost-performance options ideal for power conversion applications from datacenters, telecom rectifiers, and EV on-board chargers, to DC-DC converters, UPS and solar inverters. All UnitedSiC Gen 4 SiC FET devices can be used with a 0 to +12V gate drive, feature a 5V V(th) with a +/-20V gate rating, and include input ESD protection. The excellent third quadrant diode behavior and ultra-low Qrr makes the device excellent for hard-switched circuits, and the low Coss(tr) makes it ideal for soft-switched circuits. We examine the comparative figures of merit for the new 18mohm, 750V Gen 4 device, its performance in Totem-Pole PFC, and show the planned roadmap for the Gen 4 product portfolio.

Send your question to: ask-unitedsic@bodospower.com.

Compact Full Bridge SiC Module for EV Charger Applications
  • Power Conference Virtual Event
  • 2020-12-08

Max Josef Kell, Research Engineer, Danfoss: Danfoss Silicon Power has developed a new full bridge, full silicon carbide power module. With its voltage rating of 1200 V and current rating of 130 A it is predestined for applications in the range of 50 kW and above, possible applications being an EV fast-charger or higher power on-board chargers in commercial vehicles. The full bridge layout in a single module saves space and allows system designers to achieve higher power densities. The layout and performance of the module is verified by the help of circuit simulation, with a special attention to the current sharing among the four paralleled silicon carbide chips. Certain design measures are implemented to make the module both robust and easy to use. The characteristics of the module are proven through laboratory double-pulse tests under various operating conditions.

Send your question to: ask-danfoss@bodospower.com.

Power Cycling on sintered SiC modules
  • Power Conference Virtual Event
  • 2020-12-08

Marcus Lippert, Business Development Manager, StarPower: Reliable packaging technologies are key for widespread adaptation of power modules with SiC chip configuration. A key benchmark test is power cycling as it gives a good indication on the potential life time of the module in the field. StarPower presents power cycling results of its SiC Mosfet module range. You are provided with an overview on power cycling capabilities of current chip and packaging technologies as well as an outlook of the next step packaging improvements to further increase reliability of SiC based modules.

Send your question to: ask-starpower@bodospower.com.

Easy Design Tips to Maximize Performance in Your GaN Designs
Learn more:
epc-co.com
  • Power Conference Virtual Event
  • 2020-12-08

Alex Lidow Ph.D., CEO, EPC: GaN transistors are very similar in behavior to the aging power MOSFETs, and therefore power systems engineers can use their design experience to take advantage of the performance enhancements possible with GaN. In this presentation we are covering some of the primary design issues we see in the field with designers using GaN for the first time. First we discuss optimal layout techniques for improved performance, then we review some simple and inexpensive heatsinking techniques to extract even more power out of your GaN designs, and lastly we show how the use of GaN transistors along with good design techniques can result in better EMI than achieved with power MOSFETs.

Send your question to: ask-epc@bodospower.com.

High-Reliability, High-Performance Fast Charging Using GaNFast Power Ics
Learn more:
navitassemi.com
  • Power Conference Virtual Event
  • 2020-12-08

Stephen Oliver, VP Corporate Marketing & Investor Relations, Navitas Semiconductor: GaNFast power ICs are self-contained, integrated, easy-to-use “digital-in, power-out” building blocks. For practical system design, they deliver high-frequency, high-efficiency performance, fast time to prototype, qualification, certification and mass production, and built-in device- and system-reliability features (6M+ shipped with zero failures). OEM examples are presented showing 3x faster charging in half the size and weight of silicon.

Send your question to: ask-navitas@bodospower.com.

200mm/8-Inch GaN Power Device and GaN-IC Technology to Unleash Your Power IC Technology
Learn more:
imec-int.com
  • Power Conference Virtual Event
  • 2020-12-08

Denis Marcon, Senior Business Development Manager, IMEC: Today, GaN-on-Si is well accepted as a break-through power electronics technology. Imec has available a solid 8-inch/200mm GaN-on-Si e-mode platform that is continuously improved in terms of performance and reliability for 100, 200V and 650V power switching applications. Next to this, imec is also enabling the next generations of GaN technologies with higher level of integration and suitable for wide voltage ranges. In this talk, imec reviews the status of imec’s 8-inch/200mm GaN-on-Si e-mode device technology and how key challenges were tackled and solved. Moreover, imec’s GaN-IC technology is explained and examples of what is possible to realize with such technology will be shown.

Send your question to: ask-imec@bodospower.com.

GaN Transistors: High Performance and High Reliability
Learn more:
gansystems.com
  • Power Conference Virtual Event
  • 2020-12-08

Peter Di Maso, GaN Systems: With increasing demand for renewable energy and storage, e-mobility and data consumption, the industry is faced with design challenges around high efficiency, high power density and lower system costs. GaN power transistors play a central role in this revolution by enabling the creation of smaller, lighter, lower cost, more efficient, and high reliability power systems that are free from the limitations imposed by yesterday’s silicon-based solutions. Peter Di Maso, speaks about how GaN power transistors have become a significant part of addressing industry’s challenges in performance and reliability.

Send your question to: ask-gansystems@bodospower.com.

PowiGaN Enables an Innovative Approach to Further Reduce Adapter Size
Learn more:
power.com
  • Power Conference Virtual Event
  • 2020-12-08

Mike Matthews, VP of Product Development, Power Integrations: The high efficiency of GaN switches is well understood which is leading to the rapid uptake of the technology in the marketplace. A further benefit – which is perhaps less well documented – is that GaN devices based on technologies such as Power Integrations’ PowiGaN™ process offer increased ruggedness: the increased operating voltage of GaN eliminates the need for designers to rely on MOSFET avalanche when managing mains surges and swells, reducing the chance of damage to the primary switch. The high efficiency GaN switch improves thermal performance leading to improved reliability, and also enables new power designs. An example is the MinE-CAP™ IC which dramatically reduces bulk capacitor size, eliminates inrush stress, and simplifies the design of power supplies for worldwide applications.

Send your question to: ask-powerintegrations@bodospower.com.

Is GaN the Key to Smaller, Lighter Designs HEV/EV Designs?
Learn more:
ti.com
  • Power Conference Virtual Event
  • 2020-12-08

Xaver Arbinger, Texas Instruments: Today, designers of electric vehicle powertrain systems are challenged with reducing size, weight and cost of the onboard charger (OBC), high-voltage DC/DC converter and traction inverter – even as the power rating of these sub-systems is pushing upwards. Lighter electric vehicles travel further on a full-battery, while a higher power rating delivers faster charging times and higher vehicle performance. It is no secret that one way to achieve smaller size is by cranking up the operating frequency of the switching power electronics and shrinking the passive components such as inductors, transformers and capacitors.

Send your question to: ask-texasinstruments@bodospower.com.

Increasing the Practicality of Design Using GaN Semiconductors
Learn more:
transphormusa.com
  • Power Conference Virtual Event
  • 2020-12-08

Philip Zuk, VP of Worldwide Technical Marketing, Transphorm: Cascode is a decades-old, well-known solution that was once used in switch mode power supplies to increase efficiency. While some wide bandgap power semiconductors explore the use of alternative solutions-cascode still serves as an ideal, practical configuration for a high performance, high reliability GaN power transistor. This presentation outlines design benefits enabled by cascode as demonstrated by Transphorm's notable generation-over-generation improvements achieved. Explained in the context of comparable alternative WBG technologies such as e-mode GaN or SiC, example benefits include: - TO-xxx packages for maximum thermal performance and cost - No Kelvin source requirement - Wide gate safety margin with silicon-like threshold voltage (best-in-class gate noise immunity) - Collectively, these advantages and others lead to simple RDDR: Reliability, Designability, Drivability, and Reproducibility.

Send your question to: ask-transphorm@bodospower.com.

The Emergence of GaN Technology in USB-C Power Delivery Adapters
Learn more:
techinsights.com
  • Power Conference Virtual Event
  • 2020-12-08

Sinjin Dixon-Warren, TechInsights: Energy efficiency regulation is driving innovation in the USB wall charger market. The USB-C power delivery standard aims to provide variable charging power up to 100 W (e.g. 20 V and 5 A), so that a single AC adapter can be used to charge a wide variety of devices. TechInsights has seen an increasing number of gallium nitride (GaN) design wins in wall charger technology, and we present on the GaN integration strategies we have observed in recently procured USB adapters.

Send your question to: ask-techinsights@bodospower.com.

Power GaN Technology and CCPAK SMD Package
Learn more:
nexperia.com
  • Power Conference Virtual Event
  • 2020-12-08

Dr. Dilder Chowdhury, Strategic Marketing Director, Nexperia: Addressing the many design challenges todays engineers face with high performance, high power and high frequency designs, in this session we look at Nexperia’s next-generation HV power GaN FET technology. Including the innovative CCPAK package, a low parasitic, high-performance power package designed with all copper-clip technology, also providing enhanced reliability and ease of SMD manufacturing.

Send your question to: ask-nexperia@bodospower.com.

Why D-Mode and Specifically D3GaN for Automotive Applications
Learn more:
visic-tech.com
  • Power Conference Virtual Event
  • 2020-12-08

Elijah Bunin, Product Manager & Technical Sales, VisIC Tech: Not all GaN devices are the same, and each has its own advantages. D-Mode GaN technology has been proven for years as suitable for automotive applications and this presentation discusses how VisIC D3GaN is perfectly suitable to address the growing automotive market. From multi-kW charging applications to Hundreds of kW for Inverters, from Tens of kHz to Hundreds, D-Mode GaN devices can provide safe and efficient solutions while addressing the various requirements of each application. Among the topics discussed is Short circuit protection, gate drive circuits, Paralleling, and high-power packaging.

Send your question to: ask-visictech@bodospower.com.

High-Performance GaN Gate-Driving
Learn more:
mindcet.com
  • Power Conference Virtual Event
  • 2020-12-08

Mike Wens, Managing Director, MinDCet: GaN technology is driving higher power densities and enabling smaller power supplies. However, despite the intrinsically higher switching speeds of GaN transistors compared to the best MOSFET technologies, the gate-driver remains the limiting factor in GaN-based Switched-Mode Power Supplies (SMPS) performance. This presentation demonstrates the pitfalls of GaN gate-driving and MinDCet’s solution for maximizing the performance of GaN power stages, including a future look toward monolithic GaN ICs.

Send your question to: ask-mindcet@bodospower.com.

Maximizing SiC Performance in Evs
Learn more:
pre-switch.com
  • Power Conference Virtual Event
  • 2020-12-08

Bruce Renouard, CEO, Pre-Switch: The holy grail for EV designers is increased range. More range requires greater efficiency in both the inverter and the motor drive systems. In the past, switching losses were kept low in the inverter which compromised motor efficiency. Now, Pre-Switch has developed an embedded AI which for the first time enables soft switching to be employed in DC/AC inverters. The resulting SiC-based inverters have virtually no switching losses. This unleashes inverter switching speeds of 100 kHz which reduces sine wave distortion, thereby increasing motor efficiency. The main benefits are reduced size/cost of the SiC needed for an inverter, a higher efficiency inverter AND a 10x reduction motor current distortion. EV range is predicted to be increased by 5-12%. This presentation includes test data showing the near-total elimination of switching losses and three-dimensional graphs of system level inverter efficiencies of 99% at 100kHz in Pre-Switch’s 200kVA CleanWave inverter reference.

Send your question to: ask-preswitch@bodospower.com.

Gate Driver Module that Brings out the Performance of All-SiC Power Modules
Learn more:
tamuracorp.com
  • Power Conference Virtual Event
  • 2020-12-08

Wolfgang Rath, Tamura: Tamura outlines their product portfolio to bring out the features and performance of All-SiC power modules.

Send your question to: ask-tamura@bodospower.com.

From Device Modeling to Characterization
Learn more:
keysight.com
  • Power Conference Virtual Event
  • 2020-12-08

Simon Muff, Keysight: A complete end to end design flow for SiC devices half bridge design: By using I-V curve tracer and double pulse test results on a SIC device a modified Angelov model was generated, which was used to simulate the overshoot and ringing in the time domain of a half bridge test board. The layout parasitic effects of the printed circuit boards have been taken into consideration by an EM extracted model (S-parameters) used in co-simulation within the transient simulation, including an adoption of the models for passive elements and active devices. The modeling approach was proven as well as the accuracy of the whole design flow to predict the device behavior on any application board by simulation before building a prototype.

Send your question to: ask-keysight@bodospower.com.

Measurement Challenges with Wideband Gap Semiconductor Devices
Learn more:
tek.com
  • Power Conference Virtual Event
  • 2020-12-08

Bernd Wessling, Tektronix: Floating differential measurements (such as high-side Vgs) are difficult or impossible to make due to high frequency (fast turn on and turn off), and the presence of high common mode voltages (such as Vds) affecting oscilloscope probes which do not have enough common mode rejection at high bandwidth. The poor common mode rejection leads to the measurement being dominated by the common mode error instead of the actual differential signal. This presentation looks at CMRR issues and the utilization of traditional versus galvanically isolated differential Probes for measuring GaN and SiC devices.

Send your question to: ask-tektronix@bodospower.com.

Magnetics Valiation for WBG Application
Learn more:
b-stone.de
  • Power Conference Virtual Event
  • 2020-12-08

JC Sun, BS&T: WBG enables faster, more power, the reliability and efficiency of the wbg system are very much pending on magnetics, Bs&T provides the validation technique of magnetic material, cores and components, and provides the data for simulation and modelling, if magnetics not get done, NOTHING get done!

Send your question to: ask-bs&t@bodospower.com.

Using AI for Designing Magnetics in WBG Devices
Learn more:
frenetic.ai
  • Power Conference Virtual Event
  • 2020-12-08

Alfonso Martínez, CMO, Frenetic: As the semiconductor industry moves toward higher frequencies, the design of magnetics for those systems has not risen to the challenge due to models that were designed for low-medium frequencies or to lengthy finite elements simulations. In Frenetic we change the game with the development of a web-based software that uses Artificial Intelligence for providing accurate, fast, and realistic design for any kind of semiconductor devices.

Send your question to: ask-frenetic@bodospower.com.

Technologies for Hardware In the Loop Simulation of Complex Power Converter
Learn more:
plexim.com
  • Power Conference Virtual Event
  • 2020-12-08

Niklaus Felderer, Team Leader Applications Engineering, Plexim: Power electronic converters with complex topologies are typically found in high-power applications such as renewable energy generation, medium voltage motor drive and DC flexible power transmission. Neutral point clamped converter (NPC), modular multi-level converter (MMC), cascaded H-bridge converter (CHB) are typical examples. Besides that, parallel or series connections of such base topologies are also commonly used. The large amount of switching devices in modular converters increases the complexity of the control system significantly. In order to validate the controller performance without the risk of breaking or needing a prototype, hardware-in-the-loop (HIL) simulations can be used. This presentation introduces specific technologies for the modeling of complex power converters in HIL simulations, regarding accuracy and computational effort.

Send your question to: ask-plexim@bodospower.com.

CoolSiC™ MOSFETs 1200 V in D2PAK-7L
Learn more:
infineon.com
  • Power Conference Virtual Event
  • 2020-12-08

Michael Voelkl, Infineon: The CoolSiC™ 1200 V, SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses and 3 µs SCWT (short-circuit withstand time) of CoolSiC™ technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies

Send your question to: ask-infineon@bodospower.com.

Molded Module for Industrial Power Applications
Learn more:
st.com
  • Power Conference Virtual Event
  • 2020-12-08

Vladimir Scarpa, EMEA Technical Marketing Manager, STMicroelectronics: This presentation introduces ACEPACK™ SMIT package, a molded module for power applications offered by STMicroelectronics. Several design related topics are discussed, like assembly hints for connecting the heat-sink, and possible thermal interface materials. Finally, planned product portfolio and some application examples are also presented.

Send your question to: ask-stmicroelectronics@bodospower.com.

Practical Aspects in Automotive Applications
Learn more:
ween-semi.com
  • Power Conference Virtual Event
  • 2020-12-08

Jan Huijink, Technical Marketing Manager,WeEn Semiconductors: We show what WeEn Semiconductors can deliver for Automotive charging applications, like stationary EV Chargers and onboard chargers (OBC). We look at schematics, application design aspects and the test and measurement of the WeEn SiC (Silicon Carbide) Schottky diodes and SiC MOSFETs.

Send your question to: ask-weensemi@bodospower.com.

Reducing Size, Noise, and Field Failures of Transportation APUs
Learn more:
microchip.com
  • Power Conference Virtual Event
  • 2020-12-08

Kevin Speer, Nitesh Satheesh, and Marc Rommerswinkel, Microchip: The needs to shrink the size and soften the sound of today’s transportation auxiliary power units (APUs) have met a roadblock: Silicon IGBTs are lossy and incapable of switching the required power at frequencies above the audible range. High-voltage SiC MOSFETs allow designers to extend switching frequency well above 20 kHz, arresting noise and dramatically reducing the size of transformers; moreover, heat sinks may be downsized thanks to diminished light-load conduction losses and slashed switching losses. This presentation reports a total SiC MOSFET solution unifying three key pieces: MOSFETs designed for rugged operation to reduce field failure; low inductance power package for optimal efficiency and heat sink miniaturization; and digital gate driver for intelligent protection, control, and ease of system optimization.

Send your question to: ask-microchip@bodospower.com.

How to Kill a SiC MOSFET – Errors in Gate Circuit Design
Learn more:
onsemi.com
  • Power Conference Virtual Event
  • 2020-12-08

Martin Warnke, Mehrdad Baghaie Yazdi, ON Semiconductor: Using SiC MOSFETs in various topologies can lead to great improvements in performance and efficiency, however if not used correctly engineers can quickly find themselves frustrated with failures. These failures are often, quite in contrast to the perception of the customers, no intrinsic weaknesses of the SiC MOSFET technology but in the design choices around the gate loop. Particularly the lack of attention to the turn-on interactions between the high side and low side device can result in catastrophic failures excited by wrong circuit choices. In this presentation, we show that classical dampening efforts using gate source capacitors in the gate circuit loop are a great hazard and an often hidden killer of SiC MOSFET gates. This practice of dampening oscillations on the gate, in order to improve switching transients actually results in heavy stress on the gate. This stress is not easily visible through measurements, as they occur on the internal gate node and not on the external measurable one, which thanks to the CGS seems nicely dampened. We show in simulation and test how these errors can be mitigated and where conceptual mistakes of “dampening” can be omitted.

Send your question to: ask-onsemi@bodospower.com.

SiC MOSFET Intelligent Power Module Platform for E-Mobility Applications
Learn more:
cissoid.com
  • Power Conference Virtual Event
  • 2020-12-08

Pierre Delatte, CTO, CISSOID: The talk will present a 3-Phase 1200V SiC MOSFET Intelligent Power Module platform co-integrating a liquid-cooled power module with a robust gate driver. This plug-and-play solution aims accelerating the time-to-market for E-Mobility. This power module family delivers continuous current up to 600A with On-resistance down to 2.2mOhms. The presentation will explain how SiC MOSFET driving challenges are solved and how electrical and thermal modelling help to estimate conduction and switching losses for optimal thermal design.

Send your question to: ask-cissoid@bodospower.com.

High Precision Measurement with Smallest Components and Lowest Resistance Values
Learn more:
isabellenhuette.de
  • Power Conference Virtual Event
  • 2020-12-08

Thomas Otto, Head of Application Management, Isabellenhütte: With our latest products Wax and FMx we close the gap of high precision and power shunts in smallest designs by having lowest resistance values at the same time. Get latest technical feature and production updates and discuss with our Product Expert the requirements for Automotive, White Goods, Power Tools and Industrial applications.

Send your question to: ask-isabellenhuette@bodospower.com.

3D Printed Micro Cooler for Power Electronics
Learn more:
iq-evolution.com
  • Power Conference Virtual Event
  • 2020-12-08

Chris Rocneanu Foxy Power/IQ Evolution: IQ Evolution designs and manufactures 3D-printed, tailor-made, and standard high-performance coolers made of stainless steel for power electronics applications. With heat flux densities of over 200W/cm², very low thermal resistance, and optimized by artificial intelligence, IQ Evolution has not yet found any application that it cannot cool.

Send your question to: ask-iqevolution@bodospower.com.

SiC Processing at a Foundry – Challenges and Opportunities
Learn more:
xfab.com
  • Power Conference Virtual Event
  • 2020-12-08

Agnes Jahnke, Product Marketing Manager SiC & GaN, X-FAB Semiconductor Foundries: The Silicon Carbide Market is dominated by the large IDMs like Infineon and Cree Wolfspeed but a growing number of fabless companies or design houses requires to create their own Silicon Carbide FETs or diodes, that meet the specific requirements of their customers applications. X-FAB is a the largest SiC-foundry in the world to offer an access to the Silicon Carbide device processing with a business model to enable fast time to market and high performance devices.

Send your question to: ask-xfabsemiconductor@bodospower.com.

Breakthrough Performance of Gen4 SiC FETs
Learn more:
unitedsic.com
  • Power Conference Virtual Event
  • 2020-12-08

Dr. Anup Bhalla, VP of Engineering, UnitedSiC: Learn how to reach the highest levels of power design performance, efficiency and cost effectiveness with UnitedSiC’s new Gen 4 SiC FETs.

Send your question to: ask-unitedsic@bodospower.com.


You can find the complete YouTube playlist here: Power Conference Virtual Event 

Bodo's Previous WBG Features

PCIM Europe digital days

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My special feature for the 2020 digital days of PCIM Europe, containing some insights on the event by Prof. Dr. Leo Lorenz, Conference Director PCIM, and my review of a lifetime in power electronics. The PCIM show has been accompanying me for over 30 years now. It is now time to think about alternative ways and the digital version of the event might have been the first step into a new phase. The way we do business is changing rapidly these days. On my virtual podium, industry experts shared their latest findings on silicon carbide and gallium nitride. If you missed the event, you can find all the presentations on demand on this site.


You can find the complete YouTube playlist here: PCIM Europe digital days