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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

1.8 V Power-Line Protection by using eFuse Ics

Learn more:
toshiba.semicon-storage.com

Product Release
2026-10-22

Toshiba announces the TCKE5 Series of electronic fuse ICs (eFuses), extending its power-line protection range to support 1.8V supplies in space-constrained electronic equipment. Applications include SD memory cards, USB and HDMI® devices, laptop PCs and gaming consoles. The four devices combine overcurrent and short-circuit protection in a compact package. Operating over an input voltage range of 1.7 V to 5.5 V, the TCKE5 Series supports 1.8 V, 3.3 V and 5 V supplies. An external resistor sets the overcurrent detection threshold, allowing designers to match protection to the requirements of the downstream circuit. A mask time of 2.4 ms (typ.) allows brief current peaks to pass without triggering overcurrent shutdown; if the overcurrent persists beyond this period, the IC switches off its output. A separate short-circuit protection function responds to higher fault currents. The series comprises the TCKE501UA, TCKE501UL, TCKE502UA and TCKE502UL. The UA variants provide automatic retry following a fault, while the UL variants latch off and require an external signal to restart. Designers can choose the recovery behaviour that suits their system. All four devices support a DC output current of up to 1.0 A and are housed in the SOT-353F (UFV) package, measuring 2.0 mm × 2.1 mm × 0.7 mm (typ.).

SiC Power Modules for Energy and Grid Infrastructure

Learn more:
navitassemi.com

Product Release
2026-10-21

Navitas Semiconductor announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has an R_DSon of 8 mΩ. It has been developed for use in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas’ fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas’ 2300 V and 3300 V ultra-high voltage SiC portfolio. These SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas’ AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications. The module family will be qualified to Navitas’ AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request.

Y1 Safety Capacitors for Operations up to 500 VAC

Learn more:
tdk-electronics.tdk.com

Product Release
2026-10-21

TDK Corporation has introduced the B3201^∗A5/B5/C5 series of Y1 safety capacitors designed to suppress EMI in demanding automotive and industrial applications. The metallized polypropylene (MKP) film capacitors are rated for AC voltages of 500 V and DC voltages of up to 1500 V. Featuring a maximum operating temperature of up to +125 °C (with derating), they combine a space-saving footprint with AEC-Q200 Rev. E compliance. Typical applications include xEV power electronics, on-board chargers, EV charging infrastructure, industrial drives, power supplies, renewable energy converters, and energy storage systems. This series offers capacitance values ranging from 0.47 to 33 nF and is available with lead spacings of 15 and 22.5 mm. The smaller B32012 variants measure 5.0 × 10.5 × 18.0 mm³, and the B32013 types extend the capacitance range to 33 nF. Parallel wire leads support conventional through-hole mounting. The components are available untaped or in ammo-pack and reel configurations. The capacitors are rated for continuous operation at 500 VAC and 1500 VDC, respectively, at temperatures of up to +110 °C. At operating temperatures above +110 °C and up to the maximum of +125 °C, the operating voltage must be derated by 1.5% per degree Celsius. Operation within this elevated temperature range is limited to a maximum of 1000 hours. The series is approved according to IEC/EN/UL 60384-14, CSA E60384-14, and GB/T 6346.14.

100 W USB-C PD Medical Desktop Power Supplies

Learn more:
belfuse.com

Product Release
2026-10-20

Bel Fuse announced the SDM100G series, a family of 100 W medical desktop power supplies that combines USB-C Power Delivery (PD) with gallium nitride (GaN) technology. As Bel’s first USB Type-C medical power supply line, the series gives medical equipment designers a globally compatible option for powering and charging devices across multiple voltage requirements. The SDM100G series supports five USB-C PD output levels (5 V, 9 V, 12 V, 15 V, and 20 V) enabling a single power platform to support a broad range of devices. C8 and C14 AC inlet options address different regional electrical standards and equipment requirements, while the USB-C interface provides a widely adopted charging standard that can help customers simplify accessories and reduce electronic waste. Built for medical environments, the series carries a Means of Patient Protection (MOPP) safety classification to support protection against electric shock. Integrated overcurrent and short-circuit protection help protect connected equipment and reduce the risk of system failure. The series is certified to IEC/UL 60601-1 and supports global regulatory and EMC requirements, including UL, cUL, UKCA, CE, and FCC. The SDM100G Series is designed for portable medical devices, remote patient-monitoring equipment, mobile medical workstations, and wearable medical devices. It also supports industrial and consumer or IoT applications that benefit from compact, high-efficiency USB-C power delivery.

APEC 2027 Early Bird Registration Now Open

Learn more:
apec-conf.org

Event News
2026-10-20

Registration is now open for the 42nd Annual Applied Power Electronics Conference. The APEC 2027 conference and exposition, running March 7-11, 2027 at the Ernest N. Morial Convention Center in New Orleans/Louisiana (USA) continues its long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. APEC 2027 Conference registration includes access to technical content, such as peer-reviewed Technical Program paper presentations, Industry Sessions discussing the latest advances in commercial developments, as well as half-day Professional Education Seminars presented by industry experts on a range of topics geared to both introductory and expert-level participants. In addition to the conference program, full registration includes admission to the sold-out APEC 2027 Exposition that brings together nearly 300 manufacturers. Special events – including the MicroMouse contest and the always-popular Wednesday evening Social Event – round out the interactive tradeshow environment. APEC focuses on the practical and applied aspects of the power electronics business.

Sales Rep as well as Authorized Distributor added in the UK

Learn more:
recom-power.com

Industry News
2026-10-20

Recom has increased its sales and distribution network in the UK by adding BCD Atlantik as a sales representative and Ecopac as an authorized distributor in the United Kingdom. The partnership with BCD Atlantik combines RECOM’s DC/DC and AC/DC power supplies with BCD Atlantik’s engineering capabilities and customer-focused approach. This company supports engineers throughout the entire product development cycle by providing technical consulting, design-in support, and engineering services. For more than three decades, Ecopac Power, which is now an official RECOM distributor in the UK, has supported design engineers and industrial customers with the selection and integration of power supply solutions. The partnership provides a local source for the RECOM portfolio in the UK.

4 kW Buck-Boost Converter Reference Design

Learn more:
epc-co.com

Product Release
2026-10-20

Efficient Power Conversion (EPC) announced the use of its EPC2361 100 V eGaN FETs in a high-performance buck-boost converter reference design from Analog Devices (ADI). The design demonstrates how GaN technology can enable efficient, high-current power conversion for demanding industrial, telecom, battery charging, and other high-power applications. The EVAL-LT7930-AZ combines the LT7930 controller with EPC2361 GaN FETs in a dual-phase, interleaved buck-boost converter operating from 36 V to 65 V input and delivering 48 V output. The platform supports up to 4 kW of output power and achieves typical efficiencies of 98.5% at 36 V and 48 V input and 98.8 % at 65 V, demonstrating the high-efficiency power conversion enabled by EPC’s GaN technology. The EPC2361 is a 100 V, 133 A enhancement-mode GaN transistor featuring a typical 0.75 mΩ on-resistance and a 3 mm × 5 mm package. A key element of the reference design is the ability to optimize the switching behavior specifically for GaN. The power-stage controller provides gate drivers optimized for GaN FETs and programmable dead-time control. On the evaluation platform, the dead time is set to 10 ns based on the EPC2361 GaN FET parameters, helping minimize reverse-conduction losses while maintaining safe switching operation.

Swiss-Japanese Power Joint Venture

Learn more:
abb.com

Industry News
2026-10-20

ABB announced the creation of a joint venture with Mitsubishi Electric’s carved-out low-voltage power distribution product business, forming a new company focused on low-voltage solutions for Asian markets. For a consideration of JPY 79 billion (~$495 million), ABB will acquire a controlling 51 percent stake in the newly carved out company as well as full ownership of the related sales operations outside of Japan of Mitsubishi Electric’s low-voltage power distribution products. The transaction, which provides an option for full ownership by ABB in the mid-term, is expected to close in the second half of 2027, subject to regulatory approvals and other customary closing conditions. The new company brings together ABB’s technology and global sales network with Mitsubishi Electric’s established market presence. Mitsubishi Electric’s power distribution business employs around 2,800 people, with dedicated manufacturing facilities in Fukuyama, Japan, and Hanoi, Vietnam. Its portfolio includes low-voltage circuit breakers, switches, motor starters, contactors and control devices, energy measurement and monitoring equipment, and uninterruptible power supply systems.

Family of Heat Shock Chip Resistors

Learn more:
koaspeer.com

Product Release
2026-10-16

KOA Speer Electronics has developed a family of heat shock resistors capable of withstanding two to three times the number of thermal cycles compared to standard chip resistors. These resistors feature a metal glaze resistance film that features a thicker bottom electrode to suppress cracking and delamination caused by thermal shock. This enhanced solder joint reliability applies to both high-strength solders and SAC (Sn-Ag-Cu) solders. KOA’s family of heat shock resistors use a part number designation of -AT and include general purpose, high precision, high voltage, anti-surge and high temperature resistors. The new resistors have applications in the automotive and industrial markets as well as power supplies. KOA tested these heat shock resistors and standard resistors in 30 minute cycles from -55 °C to +155 °C for 3,000 cycles.

Single-Output AC/DC Power Supplies

Learn more:
vox-power.com

Product Release
2026-10-15

Vox Power has expanded its EIRE family of single-output AC/DC power supplies with the introduction of the EIRE600, a 600 W power supply measuring 5 inches × 3 inches with a 1.1-inch profile. The unit delivers its full 600 W output with either forced-air or conduction cooling. Where fan-less operation is preferred, it can provide up to 450 W using natural convection at 115 V_AC. For applications with short-duration higher power requirements, up to 750 W is available for three seconds. System airflow can be used where it is already available, while conduction cooling allows heat to be transferred directly into the equipment chassis or a cooling plate. Natural-convection operation is also available for applications where acoustic noise, maintenance or ingress protection are important considerations. With its efficiency of up to 96 %, the power supply is designed for both industrial and medical applications. It provides 2 MOPP isolation, BF-rated output and support for both Class I and Class II installations. The platform operates from a universal 85–264 V_AC input and is designed for operation at altitudes up to 5,000 m and ambient temperatures up to +85 °C with appropriate derating. Four standard output voltages of 12 V, 24 V, 36 V and 48 V are available. A 5 V/2 A bias supply and 12 V auxiliary fan output are provided, together with remote sense, AC_OK and inhibit functions for system control and monitoring. With the main output inhibited, standby power consumption is approximately 200 mW.

SiC MOSFET Power Module with Integrated Half-Bridge Structure

Learn more:
starpowereurope.com

Product Release
2026-10-15

The MD53HFL120L2S_B20 from StarPower Semiconductor is a SiC MOSFET power module designed for demanding high-voltage applications (1200 V class, 120 A class) in the industrial and automotive sectors. With its reverse voltage of 1200 V, an R_DS(on) of 5.3 mΩ at 25 °C, a free-wheeling diode and the use of AlN-AMB technology, the module is suited for the development of DC/DC converters and auxiliary drives. The half-bridge topology, consisting of two SiC MOSFETs (dual N-channel) connected in series, can be used for inverter and converter stages. The devices can operate at temperatures of up to 150 °C. Typical applications are main and auxiliary drives in electric vehicles, as well as on-board chargers, central and string inverters for solar installations, UPS systems and SMPS, as well as DC servo systems and robot drives.

Supply Agreement for 200-Millimeter SiC Wafers

Learn more:
infineon.com

Industry News
2026-10-15

Infineon Technologies and Wolfspeed have signed a multi-year supply agreement for 200-millimeter silicon carbide wafers, transitioning Infineon’s already existing Wolfspeed supply relationship from 150-millimeter to 200-millimeter substrate technology. The agreement directly supports Infineon’s conversion to 200-millimeter SiC manufacturing. The transition to 200-millimeter SiC wafers delivers large manufacturing economics compared to 150-millimeter production. Larger wafer diameter increases usable die area per wafer, reduces per-unit substrate cost, and improves overall manufacturing efficiency. Infineon operates a multi-source SiC substrate strategy to maintain supply chain flexibility and quality across its global manufacturing network, including its 200-millimeter SiC fab in Kulim, Malaysia.

Semiconductor Distribution Agreement for Power MOSFETs in Japan

Learn more:
idealsemi.com

Industry News
2026-10-15

iDEAL Semiconductor announced a distribution agreement with the value-added technology distributor Marubun Corporation. Under the agreement, Marubun will distribute iDEAL’s expanding portfolio of high-performance silicon MOSFETs. The manufacturer’s MOSFETs address efficiency, thermal performance, and power density challenges in industrial automation and robotics, battery management systems, industrial power supplies, isolated DC/DC converters, data center power supplies, and other high-performance power conversion systems.

Expanding Distribution Capabilities for Shipping worldwide

Learn more:
digikey.com

Industry News
2026-10-14

DigiKey will invest $100 million over the next 18 months to expand both its global product distribution center in Thief River Falls, Minnesota/USA, and its order management system. The investment funds the next phases of DigiKey’s product distribution center (PDC) expansion, adding high-volume picking capacity and advanced automated packing operations. The first new automated packing system is already on site and will be in use this year, with additional multi-line packing automation phased in as part of the investment program. The announcement follows a year of extraordinary growth for the company. DigiKey is on pace to grow more than 50 percent in 2026, and projects continued double-digit growth in the year ahead. The expansion continues the design philosophy behind the company’s purpose-built product distribution center: building in capacity ahead of demand. DigiKey’s 2.2 million-square-foot product distribution center expansion project opened in August 2022 and was designed for scalable growth, with many open spaces and much of the fourth floor left empty for future expansion. The additional picking bays, order retrieval automation and expanded packing operations will process a growing share of order volume across multiple product form factors with higher speed and efficiency. Currently, the company has more than 1.9 million products in stock and ready to ship the same day from the product distribution center.

Radiation-Tolerant GaN Point-of-Load Converter

Learn more:
microchip.com

Product Release
2026-10-14

Microchip Technology announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the power requirements of space processing applications. This device uses GaN power devices to deliver up to 20 A of output current. The converter is supplied in a 25 g surface-mount package measuring 1.51" × 1.51" × 0.45". By delivering 20 A in this footprint, the device helps engineers manage the size, power and energy constraints that accompany increasingly capable onboard processing systems. The POL-05-20S-T is designed for high-current, fast-transient applications such as for the core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. It combines a synchronous buck topology with current-mode control. With an input range of 4.75 V to 13.2 V and adjustable 0.7 V to 5 V output, the device fits to multiple power rails and system architectures. The POL-05-20S-T has electrical parameters specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad. The device is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg. It operates from -55 °C to +100 °C at full load. It incorporates remote sensing, undervoltage and overvoltage protection, soft start, an enable pin and power-good indication pin.

27 kW three-phase PSU solution for Next-Generation AI Server Power Architectures

Learn more:
infineon.com

Product Release
2026-10-08

To address the shift toward 800 VDC or ±400 VDC power supply architectures, Infineon has launched a 27 kW three-phase power supply unit (PSU) solution for server ODMs and OEMs. The reference design meets the requirements of the OCP Open Rack V3 (ORV3) specification and AI server rack architectures. The solution helps developers shorten time-to-market while improving rack power density, efficiency, and thermal performance. The design combines Infineon components including 650 V CoolSiC™ and CoolMOS™ MOSFETs, EiceDRIVER™ gate drivers, XENSIV™ current sensors, and PSOC™ microcontrollers. It achieves a peak efficiency of more than 98 % at an input voltage of 480 VAC and 50 % load. The reference design uses a five-level ANPC PFC topology and a three-level LLC converter, reaching a power density of 116 W/in³, compared with the ORV3 minimum requirement of 94 W/in³. An integrated energy buffer provides a hold-up time of 20 ms during short power grid disturbances. It also helps smooth the line voltage during rapid GPU load changes, eliminating the need for a separate capacitor bank unit (CBU). An integrated planar magnetic structure enables a modular, and scalable high-frequency transformer design. The reference design supports a three-phase input voltage range of 311 to 528 VAC and is therefore suitable for a range of global grid standards. It achieves low input-current total harmonic distortion (iTHD) and a power factor above 0.99 across most of the load operating range. The design supports operation at ambient temperatures from -5 °C to +45 °C.

3 kW AC/DC Power Supply meets Medical Requirements

Learn more:
recom-power.com

Product Release
2026-10-07

With the RACM3000-M series, RECOM provides high-power AC/DC power supplies for medical, industrial, and energy applications. Communication functions, support for parallel operation, and safety approvals enable straightforward integration into a wide range of systems. The RACM3000-M delivers up to 3000 W of output power and operates over an input voltage range of 90 – 264 V_AC, with full power available from 180 – 264 V_AC. In addition, variants of the RDC3000-M series are planned for 400 – 800 V_DC input, extending the range of possible applications in modern energy and infrastructure systems. The products feature an integrated CAN bus interface for monitoring and control, a 5 V / 2 A standby output, Remote On/Off, Remote Sense, and a DC-OK signal. For applications with increasing power requirements, active load sharing and optional integrated OR-ing FETs support safe parallel operation of multiple power supplies. A temperature-controlled intelligent fan provides reliable cooling. The series meets the requirements of UL/IEC 60601 for medical applications, UL/IEC 62368 for industrial and ICT equipment, and IEC 60335-2-29 for charging applications. With 2MOPP isolation, it is suitable for both medical devices and industrial systems with stringent safety and reliability requirements. Typical applications for the RACM3000-M series include battery charging systems, cobots, automated medical analysis and diagnostic systems, machine control, communication infrastructure, energy storage, and data centers.

60 V Dual Power MOSFETs for Automotive

Learn more:
taiwansemi.com

Product Release
2026-10-07

Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its existing TQM Series. Available in a PDFN56UD, these twelve 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm x 6 mm packaging with heat-spreader contacts, a drain current (I_D) of 81 or, respectively, 100 A, and an R_DS(ON) between 2.6 and 5.2 mΩ provide adequate thermal management and power density. Additionally, their wettable flank connections are suited for automated placement. Typical applications include H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives.

$1.5 Billion Loan Commitment for SiC Manufacturer

Learn more:
wolfspeed.com

Industry News
2026-10-07

Wolfspeed announced it has received a conditional loan commitment letter from the U.S. Department of War (“DoW”), through its Office of Strategic Capital (“OSC”), for up to $1.5 billion of long-term financing to support the domestic development and production of silicon carbide materials and wide bandgap power devices, with an additional focus on U.S. national security applications. Beyond supporting the domestic wide bandgap supply chain, which is critical to the U.S. defense and economic industrial base, the $1.5 billion commitment will support key DoW initiatives. Specifically, Wolfspeed plans to use the financing to, without limitation, upgrade its gallium nitride (GaN) epitaxy capabilities for next generation communications infrastructure and electronic warfare systems and develop radiation-hardening capabilities for its current SiC and future GaN products. Wolfspeed believes that SiC and related semiconductor technologies are critical to next generation power and radio-frequency applications across defense, aerospace, AI, critical infrastructure and other strategic commercial markets. The execution of the definitive agreements and consummation of the potential financing are subject to substantial due diligence and numerous conditions, the negotiation and finalization of agreements, significant closing conditions, governmental authorizations and approvals, appropriations and required third-party consents.

Cooperation on advanced Packaging Industrial Adoption

Learn more:
electronics.org

Industry News
2026-10-07

The Global Electronics Association has signed a Memorandum of Understanding (MoU) with the Fraunhofer Group for Microelectronics to help accelerate the path from advanced packaging innovation to industry-scale manufacturing. The collaboration focuses on the APECS pilot line, the European pilot line for advanced packaging and heterogeneous integration for electronics components and systems under the EU Chips Act. APECS is coordinated by the Fraunhofer-Gesellschaft and implemented by Research Fab Microelectronics Germany (FMD), a research collaboration of 13 Fraunhofer institutes and the Leibniz institutes FBH and IHP. The MoU draws on APECS pilot line capabilities and the Global Electronics Association’s expertise in standards, industry engagement and knowledge transfer to support the transition of new technologies toward industrial implementation. APECS provides access to capabilities for advanced packaging and heterogeneous integration, including chiplet-based modules and 2.5D/3D integration. The pilot line also emphasizes System-Technology Co-Optimization (STCO) – an approach that helps align product design, materials, assembly integration choices and manufacturing processes earlier in development. At a kick-off meeting in September, representatives from the Global Electronic Association and the Fraunhofer Group for Microelectronics launched the collaboration and discussed its priorities with a focus on supporting industry adoption of advanced packaging and heterogeneous integration technologies. The goal is to turn validated pilot line capabilities into industry-ready approaches that can be adopted at scale.

3300 V SiC MOSFET Module for Industrial Equipment

Learn more:
toshiba.semicon-storage.com

Product Release
2026-10-06

Toshiba Electronics Europe launched IX800FXF2YMS4, a dual SiC MOSFET modulewith high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. The IX800FXF2YMS4 uses Toshiba’s third-generation SiC MOSFET devices and has a drain-source voltage (V_DSS) rating of 3300 V with a drain current (DC) rating of 800 A. The IX800FXF2YMS4 has an I²t rating of 30 0kA²s for its diode at initial channel temperature of 175 °C, V_GS = -6 V, a single half-sinewave 10 ms pulse, and F.R. = 1 %. This indicates the diode’s surge current capability under abnormal operating conditions. Typical drain-source on-voltage (sense) (V_DS(on)sense) is 1.4 V at I_D = 800 A, V_GS = +20 V and T_ch = 25 °C. Typical turn-on and turn-off switching losses (E_on and E_off) are 185 mJ and 175 mJ, respectively, at V_DD = 1800 V, I_D = 800 A and T_ch = 175 °C. The device is housed in the iXPLV™ (Intelligent Flexible Package Low Voltage) package, which uses silver sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175 °C.

TVS Diode Arrays for ESD Protection

Learn more:
littelfuse.com

Product Release
2026-10-06

Littelfuse announced AQ4315-01ETG and SP4315-01WTG, two bidirectional TVS Diode Arrays (SPA® Diodes) that combine low clamping voltage with low capacitance to protect today’s fastest automotive and consumer data interfaces from electrostatic discharge (ESD) without compromising signal integrity. High-speed interfaces such as automotive ADAS, DisplayPort, and USB4 are increasingly vulnerable to ESD damage as data-line voltages drop below 1 V to save energy and reduce EMI. Conventional TVS diodes force a tradeoff between low clamping voltage and low capacitance, and many competing devices advertise a lower breakdown voltage while still clamping at levels that leave protected chips exposed to damage. The AQ4315-01ETG and SP4315-01WTG close that gap, holding clamping voltage to a typical 4.5 V to 6.5 V while suppressing ESD transients ranging from 8 kV to 20 kV down to well under 10 V at the protected device, an 800- to 2,000-times reduction in the voltage and current reaching the IC and keeping it safely within its Safe Operating Area (SOA). The capacitances of the devices are 0.25 pF (AQ4315-01ETG) or 0.17 pF (SP4315-01WTG) to preserve high-speed signal integrity. AQ4315-01ETG provides automotive-grade reliability is AEC-Q101 qualified and PPAP capable, rated -40 °C to +150 °C.

Collaboration on 800 V Reference Design for Next-Generation AI Data Centers

Learn more:
navitassemi.com

Industry News
2026-10-05

The industry is shifting toward 800V DC rack power architectures to improve distribution efficiency, increase power density and support next-generation server designs. To help accelerate this transition, Navitas and Microchip have collaborated on an 800 V DC-to-6V DC reference design for AI data center rack power applications. The platform combines Microchip’s digital power control and security technologies with Navitas’ GaNFast™ gallium nitride (GaN) power devices to give developers a practical path to implement high-efficiency power conversion aligned with the Open Compute Project (OCP) 800 V DC standard. Complete with reference hardware, software and design documentation, the solution helps reduce design risk, shorten development cycles and accelerate deployment of next-generation AI infrastructure. At the core of the reference platform are Microchip's dsPIC33AK Digital Signal Controllers (DSCs), TA100 CryptoAuthentication™ device, and Navitas’ GaNFast FETs. The dsPIC33AK is designed to provide high-resolution control, high-speed analog and security with support for post-quantum cryptography. Powered by a 200 MHz 32-bit core with a double-precision floating-point unit (FPU), the dsPIC33AK256MPS306 family combines 78 ps high-resolution Pulse Width Modulators (PWMs) and multiple 12-bit Analog-to-Digital Converters (ADCs) operating at up to 40 MSPS for high frequency, high-efficiency DC/DC power conversion. This PDB is powered by 16 × NV6034, 650 V, 17 mΩ GaNFast FETs in a stacked half-bridge topology on the primary side. The DFN8×8 dual-side-cooled package reduces thermal resistance. The PDB targets delivering up to 96 % peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³.

Investment in Scottish Battery Storage Project

Learn more:
cip.com

Industry News
2026-10-02

Copenhagen Infrastructure Partners (CIP) has taken Financial Investment Decision (FID) for Kilmarnock South, a 350 MW / 1,400 MWh lithium-ion battery energy storage system (BESS) located in south Ayrshire, southern Scotland. Construction is now underway with commercial operations expected in the first quarter of 2028. The battery will store surplus Scottish wind power that would otherwise go unused and release it to the grid when the network has capacity. Kilmarnock South is CIP's fourth investment in transmission-connected BESS projects in Scotland. Upon full commissioning, CIP’s four Scottish BESS projects will collectively offer a total energy storage capacity of 4.4 GWh, the equivalent of almost a third of Great Britain’s operational battery energy storage today and about the electricity demand of over 5.5 million households, across a two-hour period.

650 V GaN in Dual-Side Cooled Package for Megawatt-Scale AI Data Centers

Learn more:
renesas.com

Product Release
2026-09-30

Renesas launched a 650V GaN device with dual-side cooling for high-density power conversion in 800 V high-voltage DC (HVDC) AI data center architectures. The TP65H020G4PLSGBD D-Mode device delivers 20 mΩ on-resistance in a dual-side-cooled (DSC) PQFN package. Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centers supporting up to 700 V operation. It targets the 800 V DC/DC intermediate bus converter (IBC) stage that steps down to 48 V, 12 V or 6 V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack. As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, this device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10 %. Its 8 × 8 mm² PQFN footprint is also 57 % smaller than the existing 10 × 15 mm² TOLT package.

Aluminum-Housed Wirewound Resistors for High-Power Industrial Equipment

Learn more:
bourns.com

Product Release
2026-09-29

Bourns announced the UALH Series Aluminum Housed High Power Wirewound Resistors industrial equipment operating under demanding electrical and thermal conditions. The fixed resistors provide a 100 W power rating when mounted to a heatsink and a 30 W power rating without a heatsink, with a resistance range of 0.5 Ω to 22 kΩ with ±5 % tolerance and a temperature coefficient of resistance of ±350 ppm/°C. Industrial motor controls, power supplies and high-power machinery can subject resistive components to elevated temperatures and electrical stress. These conditions require designers to account for power dissipation, working voltage and available mounting space when selecting a fixed resistor. The UALH Series combines wirewound construction protected by a silicone molding compound with an aluminum housing that transfers heat from the resistor when mounted to a heatsink. Its thin, lightweight body operates across a temperature range of -55 °C to +275 °C. The maximum working voltage is 1483 V, while the dielectric withstanding voltage is 4500 V. Target Applications are industrial motor controls, industrial power supplies and high-power machinery.

Silicon Carbide Technology for Solid-State Transformers in 800 VDC AI Data Center Power Architectures

Learn more:
infineon.com

Industry News
2026-09-29

Infineon Technologies will deliver silicon carbide (SiC) power devices to Eaton, an intelligent power management company, for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across APAC. It targets 800 VDC data center power distribution architectures. Designed for high-density computing infrastructures and emerging 800 VDC AI data center power distribution architectures, Eaton’s MVSST 2.0 platform reduces conversion stages compared with conventional architectures, improving efficiency, power density and deployment flexibility. It is one of the first medium-voltage solid-state transformer platforms. Looking ahead, Eaton and Infineon are exploring next-generation SST platforms based on 2.3 kV and 3.3 kV SiC power modules to support higher system voltages, greater efficiency and enhanced reliability for future AI data centers, grid modernization and renewable energy applications.

Climbing up the Ladder of Responsibilities

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ttieurope.com

People
2026-09-28

TTI promoted Marc Winfield to President of TTI IP&E – Europe. Marc Winfield succeeded Glyn Dennehy and assumes responsibility for TTI’s European business, with a focus on continued growth and strengthening relationships with its customers and strategic supplier partners. He has been with TTI for 25 years and has held senior positions across its European commercial organisation, including Director of European Strategic Accounts and Regional Vice President roles covering Northern and Southern Europe. For more than eight years, he has overseen the European Sales organisation and was appointed Senior Vice President Sales in 2023. In his role as President of TTI IP&E – Europe, Marc Winfield reports directly to John Drabik, President of TTI IP&E – Global. Glyn Dennehy, who has been President of TTI’s European business since 2015, is moving into the role of Executive Advisor to Mike Morton, Chief Executive Officer of TTI, and John Drabik, President of TTI IP&E – Global. He will remain actively involved with the business throughout 2027, supporting the management transition and selected strategic initiatives.

Infrastructure-compatible Reference Designs for Next-generation AI Data Centers

Learn more:
mitsubishielectric.com

Product Release
2026-09-24

Mitsubishi Electric Corporation’s U.S. subsidiary Mitsubishi Electric Power Products released Chip-to-Grid DSX Reference Designs to support the adoption of NVIDIA’s Vera Rubin NVL72 and future next-generation NVIDIA AI infrastructure in U.S. data centers. Going forward, Mitsubishi Electric will use the reference designs to develop solutions for next-generation AI data centers. The company’s Chip-to-Grid DSX Reference Designs encompass and coordinate systems from grid connection to chip power supply, and direct-rack to facility-level cooling. This solution integrates Mitsubishi Electric’s power transmission and distribution equipment with next-generation power supply that incorporates cutting-edge technologies as well as cooling systems. The designs also offer reliable scalability to support future gigawatt-class data centers. The designs support both conventional 415/480 VAC and 800 VDC power distribution within the data center. Furthermore, by combining with a dual-loop cooling system suitable for high-density AI loads, the solution maximizes power efficiency.

Ultra-Ruggedized 160 W AC/DC Power Supply for Extreme Environments

Learn more:
advancedenergy.com

Product Release
2026-09-24

Advanced Energy Industries launches the ruggedized DF150 160 W AC/DC power supply. This is the first offering in the company’s Defiant Future (DF) series of robust, high-reliability standard power supplies for extreme-environment applications across the defense, industrial, telecommunications, transportation and energy sectors. Backed by rigorous validation testing, the DF150 power supply features a broad spectrum of MIL-STD certifications, combining proven performance with the shorter lead times of a standard power supply. It is certified to MIL-STD 810H, withstanding harsh conditions including shock, vibration, altitude variations and thermal extremes. DF150 also provides enhanced electromagnetic compatibility (EMC) performance with certification to MIL-STD 461G. The unit delivers a nominal 27 VDC at 6 A (160 W) with no performance degradation across its extended operating temperature range of -46 °C to +60 °C. With its IP67 rating, DF150 is fully submersible and exceeds MIL-STD ingress protection requirements for dust and liquids. The DF150 delivers up to 91 % efficiency at full load. It operates with no minimum load and low leakage (275 μA at 230 VAC). Its MIL-STD-461G certification includes RE102, CE102, CS101, CS114, CS115, CS116, CS118 and RS103. The DF150 is available with conduction cooling via a base plate or convection cooling with a mounted heatsink.

High-Current Common-Mode Chokes for Automotive DC Power Applications

Learn more:
sumida.com

Product Release
2026-09-23

Sumida Corporation has introduced the CNFC6D33 and CNFC11D57, a series of DC common-mode chokes designed to suppress electromagnetic interference (EMI) in automotive and other demanding electronic applications. The devices are designed for DC power-line applications in automotive, industrial, and consumer electronics. The CNFC6D33 measures 7.2 × 6.2 × 3.5 mm³ and supports rated currents up to 4 A, while providing common-mode impedance of up to 2,500 Ω typical at 100 MHz, depending on the version. DCR is as low as 15 mΩ maximum. The larger CNFC11D57 supports rated currents up to 16 A yet measures only 12.3 × 11.3 × 6.0 mm³. Three impedance configurations provide flexibility for different EMI-filtering requirements, with common-mode impedance ranging from 240 Ω to 1,000 Ω minimum at 100 MHz. DCR is 3 mΩ maximum. Both devices are designed for operation from -40 °C to +150 °C, including self-heating, supporting applications exposed to demanding electrical and thermal conditions. Potential applications include automotive HVAC systems, traction inverters, onboard chargers, automotive powertrain systems, DC power supplies, industrial and consumer electronics and other DC power systems requiring EMI suppression. The CNFC6D33 and the CNFC11D57 have provisional AEC-Q200 compliance.

Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth

Learn more:
wartsila.com

Industry News
2026-09-17

Technology group Wärtsilä and Tokyo Gas Engineering Solutions Co (TGES) have signed a Memorandum of Understanding (MoU) to jointly evaluate power supply solutions for data centres in Japan. The Memorandum of Understanding between Wärtsilä and TGES aims to establish a framework for jointly evaluating gas- or dual-fuel engine-based power generation solutions for selected data centre opportunities currently under development by TGES in Japan. Under the MoU, the two companies will cooperate in developing initial technical concepts and establishing performance parameters and in assessing the feasibility of selected projects. Wärtsilä is a provider of on-site power to data centre projects.

Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation

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nexperia.com

Industry News
2026-09-17

Nexperia and Tata Electronics have started a strategic partnership spanning semiconductor wafer manufacturing, assembly and test, technology collaboration, and innovation. The partnership establishes a framework for long-term cooperation across multiple stages of the semiconductor value chain and supports the growth ambitions of both companies. The partnership is structured around three areas: Front-end wafer fabrication, back-end assembly and test as well as technology and ecosystem development. As part of the front-end manufacturing collaboration, Nexperia and Tata Electronics are laying the groundwork for the production of Nexperia's MOSFET portfolio at Tata Electronics' upcoming 300mm semiconductor fab in Dholera, Gujarat. In parallel, the partnership also includes collaboration on semiconductor assembly and test of Nexperia’s discrete semiconductor products at Tata Electronics’ packaging facility in Jagiroad, Assam. The alliance reflects the companies’ shared ambition to build a long-term manufacturing partnership that enhances manufacturing flexibility, strengthens supply chain resilience, and establishes scalable production pathways to support Nexperia’s future growth. Tata Electronics is building India’s first commercial semiconductor fab in Dholera, Gujarat, and the first indigenous semiconductor assembly and test facility in Jagiroad, Assam, with a combined investment of USD 14 billion, to serve global customers across critical sectors.

Dual Channel Gate Driver

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infineon.com

Product Release
2026-09-17

Infineon Technologies introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver engineered for high-density silicon power designs in AI datacenter applications. Housed in a WQFN-12 package measuring 2.2 mm x 2.2 mm, the device addresses the growing demand for power conversion solutions that deliver higher server rack density without sacrificing reliability or thermal performance. The 2EDL6014AC-G2D supports dual high-side, dual low-side, and half-bridge configurations, making it suitable across the switched-capacitor and multilevel topologies increasingly adopted in next-generation AI server power architectures. The 2EDL6014AC-G2D provides two completely independent floating output gate drivers, each capable of driving a high-side MOSFET operating at up to 120 V. Full 4 A source and 6 A sink current driving capability takes care of the switching performance under demanding load conditions. Separate INA and INB input pins enable independent control of both channels, with integrated deglitch filtering for improved noise immunity in high-density PCB environments. The input stage is 3.3 V and 5 V logic compatible and can be directly connected to microcontroller ground to maximize signal integrity. Undervoltage lockout (UVLO) on both floating output supplies forces the corresponding outputs low in the event of insufficient supply voltage, supporting safe system startup. An exposed pad provides low thermal impedance, improving heat dissipation under sustained heavy loads, a characteristic directly relevant to the continuous high-utilization operating profiles of AI inference and training infrastructure. Applications include solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules.

Distribution Agreement with Current Sensor Company

Learn more:
avnet.com

Industry News
2026-09-17

Avnet Silica announced a distribution agreement with LEM. Under the agreement, Avnet Silica will offer LEM’s portfolio of PCB-mounted and module-mounted current sensors, covering currents from below 1 A up to 42 kA, voltage sensors for applications up to 6.4 kV, and Rogowski coil solutions for grid monitoring and instrumentation. As electrification raises the performance and safety demands placed on power systems, accurate current and voltage measurement is becoming increasingly important to engineers. LEM provides a range of galvanically isolated sensing technologies for high-current and high-voltage applications, supporting precise system control, fault and overload detection, and energy management. LEM’s sensing solutions are designed for applications across automotive, e-mobility and EV charging, data centres, energy, industrial automation and smart infrastructure.

60 V Dual Power MOSFETs

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taiwansemi.com

Product Release
2026-09-15

Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its TQM Series. Available in a PDFN56UD, the 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm × 6 mm packaging with heat-spreader contacts enables drain currents of 40 A and an R_DS(ON) of 13 mΩ. Additionally, their wettable flank connections are suited for automated placement. TSC’s 60 V dual power PDFN56UD MOSFETs are suited for applications like H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives. All are produced to meet AEC-Q standards, and documentation for the production part approval process (PPAP) can be provided.

MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits

Learn more:
rohm.com

Product Release
2026-09-15

ROHM has developed the RS4P063BPHZG, a 100 V MOSFET optimized for automotive safety functions and protection circuits. The device achieves a wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under V_DS = 100 V and P_W = 100 μs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 mm × 8.0 mm) and TOLG (TO-Leaded with Gullwing, 9.9 mm × 11.7 mm) packages as well.

Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents”

Learn more:
tesvolt.com

Industry News
2026-09-15

The world’s largest public festival has become increasingly electrified since Russia’s first attack of Ukraine. However, the physical power grid infrastructure on site is reaching its limits. Munich’s municipal utility company, Stadtwerke München (SWM), could only further increase capacity at the medium-voltage level at disproportionate cost. This year SWM ensures the reliable operation of the large Pschorr-Bräurosl and Löwenbräu festival “tents” (halls) with three commercial battery storage systems supplied by the TESVOLT. A large festival tent is provided with a grid connection capacity of around 420 kW by SWM, but actual demand can surge to well over 500 kW during peak periods. At those moments, the grid connection is operating under continuous overload. The appetite for electricity at the Theresienwiese has multiplied within a short period of time. In addition to the move away from gas since the start of Russia's war of aggression against Ukraine, new and stricter municipal emissions regulations accelerate the transition to electric-powered systems. As even small food stalls are now required to comply with extensive regulations governing the use of gas, tent operators can save money by switching to fully electric kitchens, avoiding the installation of costly exhaust gas systems and monitoring equipment. At the same time, comfort levels are increasing. The patio heaters in outdoor areas alone now require up to 150 kW per tent. Particularly in cooler weather, peak loads rise significantly, as the heaters consume large amounts of electricity. This power is now supplied decentrally by the battery storage systems, reducing the strain on the tents’ grid connections.

Fully regenerative Dynamic Test System for 800 V AI Data Center Power

Learn more:
tek.com

Product Release
2026-09-15

With the EA-ELR 21000 Tektronix introduces a dynamic test system, which acts as an auto-ranging, high-dynamic electronic load test system built on a fully regenerative architecture for validating the ±400 V and 800 V DC power architectures emerging in AI data centers. Rather than dissipating absorbed test energy as heat, the system returns it to the grid with up to 95 % regenerative efficiency, helping manufacturers conduct sustained high-power validation with less demand on lab power and cooling infrastructure. The system is built around the EA-ELR 21000-80 4U HS, a 30 kW regenerative electronic load module rated for up to 1,000 V and up to 80 A. The EA-ELR 21000 Dynamic Test System delivers up to 12 A/μs at 240 kW of current slew rate to emulate the rapid load transitions that challenge 800 V power shelves and power racks. It provides up to 1.92 MW of modular test capacity across up to eight racks and 64 loads, expanding in 30 kW increments. Each rack delivers up to 240 kW in a 0.6 m² footprint. The EA-ELR 21000-80 4U HS is rated for up to 1,000 V, 80 A and 30 kW in 4U. Integrated waveform generation supports repeatable load profiles, while coordinated controls enable multiple loads to operate as one synchronized test system. The modular architecture also allows to service individual modules without disrupting the entire system. The EA-ELR 21000 is also designed for solid-state transformers that convert medium-voltage AC power for high-power DC infrastructure.

140 W USB-C Power Delivery Reference Design

Learn more:
eggtronic.com

Product Release
2026-09-14

Eggtronic introduced a 140 W USB-C Power Delivery AC/DC reference platform for next-generation premium laptops and high-performance devices. This reference design is developed based on Renesas’ high-voltage GaN transistors combining Eggtronic's EPIC™ combo controller with Renesas' high-voltage GaN device, the TP70H150G4LSG (700 V, 150 mΩ R_DS(on)). Unlike conventional high-power USB-C adapters that rely on costly LLC, Asymmetrical Half-Bridge (AHB), or Active Clamp Flyback (ACF) topologies, this reference design achieves efficiencies approaching 96 % while maintaining the bill of materials cost of a traditional QR flyback converter. The platform also delivers 94.5 % efficiency at 90 V_AC input enabling compliance with the latest DOE Level VII energy efficiency requirements. At the heart of the solution is Eggtronic's EPIC combo controller, which integrates major control function into a single device, including totem pole Power Factor Correction (PFC), isolated primary-side regulation, synchronous rectification, proprietary low-latency isolated communication and USB Power Delivery protocol management. The platform's Totem Pole PFC overcomes two of the most common limitations of conventional implementations, EMI performance and light-load efficiency. The PFC stage feeds Eggtronic's proprietary QuarEgg™ regenerative flyback architecture, which utilizes a single primary-side switch to achieve higher efficiency and lower system cost than LLC, AHB, and ACF converters while maintaining the simplicity and economics of a QR flyback design.

Anti-Surge Chip Resistors in 0402 Size

Learn more:
rohm.com

Product Release
2026-09-10

ROHM has developed the “SDR01 Series” of high anti-surge chip resistors, delivering a rated power of 0.33 W in the 0402 (1005 Metric) size. Designed for electronic equipment where mounting densities continue to increase, the series is well suited for automotive, industrial, consumer electronics, and AI server applications. The products help save board space and reduce component count by enabling replacement of larger-size resistors and consolidation of resistors while maintaining the reliability required of anti-surge chip resistors. ROHM optimized the resistive element and electrode designs of the SDR01 Series. This enables high rated power to be guaranteed in the 0402 size while securing the reliability expected of high anti-surge chip resistors. The devices guarantee 0.33 W up to the rated terminal temperature of T_k = 125°C. In addition, these products achieve a TCR of ±100 ppm/°C for 10 ohm; ≤ R ≤ 2.2 MΩ. By suppressing resistance-value fluctuations caused by temperature changes, the components support stable circuit operation and contribute to smaller, more reliable power supply circuits and peripheral interface circuits.

Thermoelectric Generators

Learn more:
sameskydevices.com

Product Release
2026-09-09

Same Sky® (formerly CUI Devices) and its Thermal Management Group expanded its thermoelectric generator (TEG) modules product line. Utilizing the temperature difference between the hot and cold side of the module to generate usable power, the SPG family of thermoelectric generators now offers output power up to 27.3 W in expanded package sizes from 30 x 30 mm² to 80 x 80 m mm² m with profiles as of e.g. 3.5 mm. They are suited for applications where waste heat is present, like industrial processes, to recover energy that would otherwise be lost. These TEG modules feature silicone sealing, continuous maximum hot side temperatures up to 300 °C, and graphite pad options for a simplified thermal interface. Additional specifications measured under conditions (T_h = 300 °C / T_c = 30 °C) include an open circuit voltage of 8 to 17.7 V_DC, a matched load resistance of 0.83 to 5.7 Ω, a matched load output voltage of 4 to 8.8 V with a matched load output current of 1 to 5.7 A. The heat flow across the module is 90 to 525 W, while the heat flow density is 6.2 to 13.2 W/cm².

TDAP Stage 2 Certificate for EMC Chokes

Learn more:
we-online.com

Industry News
2026-09-09

The Würth Elektronik lab at its Quality Design Center Asia in Shenzhen/China has been awarded with the TDAP Stage 2 certificate for the product “choke for suppressing electromagnetic interference” by VDE Prüf- und Zertifizierungsinstitut GmbH. This entitles Würth Elektronik to conduct tests in its own lab at its Chinese site under the supervision of VDE experts. The test results are recognized by VDE and, if successful, can lead to VDE certification. The VDE Institute’s TDAP (Test Data Acceptance Program) accelerates the certification process, thereby reducing time to market. Specifically, the certification of the laboratory in Shenzhen means that Würth Elektronik is permitted to conduct acceptance testing of its common-mode chokes in accordance with IEC 60938. Assessment of the lab at the recently expanded Quality Design Center (QDC) Asia was accompanied by intensive technical discussions. The successful certification was followed by a presentation ceremony in Offenbach, where Yangyang Chen, Head of Würth Elektronik’s facility in Shenzhen, received the certificate.

Battery Cells provide more Energy at the same Weight

Learn more:
ise.fraunhofer.de

Industry News
2026-09-09

Together with partners from research and industry, the Fraunhofer Institute for Solar Energy Systems ISE has modified the structure of battery electrodes so that the battery cells can store 10 to 15 percent more energy at the same weight. They achieved this by more than tripling the coating thickness of the battery electrodes - for example, in lithium-ion batteries - which simultaneously reduces the number of current collectors in the battery cell. The research team implemented the new electrode architecture in lithium-ion pouch cells manufactured using industry-standard processes. Furthermore, they successfully applied the concept to zinc-ion and sodium-ion battery cells. Normally, the anode and cathode consist of many thin, alternating layers of electrode coating and current collectors. Fraunhofer ISE has managed to increase the thickness of the electrode coating from the previously standard 100 to 200 μm to up to 800 μm, thereby significantly reducing the number of current collectors required. As a result, there is now much more space for active material, which increases the energy density by 10 to 15 percent, depending on the battery type and design. The research team initially validated the new electrode architecture for zinc-ion, sodium-ion, and lithium-ion batteries experimentally using small battery cells in the laboratory. For lithium-ion batteries, they also manufactured prototypes of pouch battery cells with this electrode structure on a semi-automated production line in the cleanroom of the Fraunhofer ISE Battery Materials and Cell Production Lab. The battery electrodes are PFAS-free and are manufactured without the use of toxic solvents.

Acquisition of Interconnect Technology Company

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harwin.com

Industry News
2026-09-09

Harwin has acquired KEC Limited, a UK-based designer and manufacturer of rugged interconnect technologies for the aerospace, defence and high-end industrial sectors. Founded in 1979, KEC manufactures EMC backshells and panel fittings that deliver long-term, reliable operation in complex, mission-critical applications. Harwin will now add the full range of KEC technologies and services to its existing portfolio of high-reliability signal, power and coax connector technologies and accessories. In addition to expanding the Harwin product range, the acquisition will make available KEC’s circular and D-type EMC backshells, glands and panel fittings and fully bespoke solutions to a wider market thanks to Harwin’s global sales, distribution and support network.

Common Mode Chokes with higher Voltage Rating

Learn more:
itg-electronics.com

Product Release
2026-09-09

ITG Electronics has introduced its C201371B Series of 300 V_AC NanoCrystal common mode chokes (CMCs), providing an EMI filtering option for higher-voltage electronic systems. This expansion of ITG's 250 V_AC C201371A Series, the C201371B family increases the voltage rating to 300 V_AC. The upgrade helps designers address more demanding operating conditions, increase safety margins against transient surges, and support compliance with applicable safety standards, including UL/IEC 60938-2 and IEC 62368-1. The series uses nanocrystalline core material, produced by rapidly cooling molten metal to create crystals with grain sizes on the nanoscale. The material's high permeability enables designers to achieve the required inductance with fewer winding turns. In turn, the chokes can provide lower direct current resistance (DCR), helping reduce power loss and improve overall system efficiency. Compared with ferrite-based common mode chokes, the C201371B Series can save approximately 30-60 % in space and weight. This combination of smaller size, lower weight and reduced DCR makes the series well suited to power electronics designs in which thermal performance, efficiency and board space are critical considerations. Available in through-hole configurations, the C201371B Series spans inductance values from 0.4 mH to 11.0 mH, DCR values from 20.0 mΩ to 380.0 mΩ, and maximum current ratings from 4.5 to 0.9 A. The components are designed for AC/DC converters used in industrial equipment and automotive applications, as well as other commercial and consumer electronics requiring compact common-mode noise suppression.

Battery Company relocates within Silicon Valley

Learn more:
ensurge.com

Industry News
2026-09-09

Ensurge Micropower, a company active in solid-state lithium microbatteries, is relocating its San Jose operations. The move gives Ensurge a fully equipped, battery-focused environment, purpose-built to accelerate its proprietary lithium solid-state microbattery development and pilot-line operations, as well as a state-of-the-art space to host customers, partners, and stakeholders across med-tech, consumer electronics, IoT, and defense markets. The 32,000-square-foot facility is designed around the company's core technology development and operational needs, creating an environment for both pilot production and commercialization. Under the transition plan, Ensurge will still retain a defined process area at its current site through year-end to maintain continuous operations as equipment and workflows are transferred and qualified.

Electrical Safety Testers

Learn more:
kikusui.co.jp

Product Release
2026-09-09

The electrical safety testers of Kikusui’s TOS5400 Series perform two of the four fundamental safety tests: withstanding voltage and insulation resistance tests, both essential for ensuring product reliability and safety. This series complies with major international safety standards, including IEC, EN, BS, VDE, UL, CSA, GB, and JIS. In addition, to ensure stable and reliable measurements, the TOS5400 Series is equipped with a high-efficiency PWM switching amplifier, which means, that it can maintain a stable output voltage even when the AC line voltage or frequency fluctuates, enabling consistent evaluation in regions where the power supply is unstable. The discharge detection function allows the response speed (sensitivity) to be adjusted, making it possible to detect momentary discharges and high-frequency discharge components such as arc and corona discharges. The TOS5400 is also the first Kikusui withstanding voltage and insulation resistance tester featuring a touchscreen display. Its intuitive interface is claimed to simplify operation, to reduce setup time, and to support more efficient and easier test execution. It is well suited for R&D and QA testing, laboratories, production line inspections and certification bodies looking to enhance both the accuracy and efficiency of their safety evaluation processes.

TMR Switch Family expanded with leaded TO-92 Package Option

Learn more:
littelfuse.com

Product Release
2026-09-08

Littelfuse announced the TX00AT314AMA Omnipolar TMR Switch Sensor, the latest addition to the TX00 TMR Switch family. The TX00AT314AMA delivers the same performance as the SOT-23-3 TX00AS314TRA in a leaded TO-92 package and with South Korea country of origin, providing design teams with a new form factor option and a diversified supply chain. The TX00AT314AMA integrates a precision TMR (Tunnel Magnetoresistance) sensing element with CMOS signal-processing circuitry - including an on-chip voltage generator, low-noise amplifier, comparator, and Schmitt trigger. Like its SOT-23-3 sibling, it features X-axis (in-plane) magnetic sensing for detection of fields parallel to the sensor surface. The device operates with a typical supply current of 1.5 μA and supports high-speed detection up to 1 kHz. Like all TX00 family members, the TX00AT314AMA features omnipolar detection with a sensitivity of about 14 Gauss, allowing it to respond to both North and South magnetic poles without polarity alignment constraints. Its operate and release thresholds, combined with built-in hysteresis are said to enable bounce-free switching even in electrically noisy environments. Typical applications are building and home automation (smart meters with tamper detection, position and limit sensing, industrial automation (proximity sensing), consumer electronics (appliances, power tools, battery-powered IoT and wearable devices as well as utilities (gas, water, and heat metering).

600 V Super Junction MOSFETs

Learn more:
aosmd.com

Product Release
2026-09-08

Alpha and Omega Semiconductor (AOS) released αMOS E2™ 600 V Super Junction MOSFETs: AOGT037V60DE2 (600 V, 37 mΩ) and AOGT060V60DE2 (600 V, 60 mΩ). These devices are suited for applications including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems. This MOSFET platform features a body-diode ruggedness with a di/dt of 1500 A/μs, in a top-side-cooled GTPAK™ package to increase thermal performance via the top-side cooling pad. As a result, system designers can enhance thermal dissipation and reclaim PCB space to maximize overall power density.

Europe’s Battery Storage Boom Accelerates

Learn more:
eupd-group.com

Industry News
2026-09-07

Europe’s battery storage market is entering its most transformative year yet, with annual installations forecast to rise from 32 GWh in 2025 to 57 GWh in 2026, a 78% year-on-year increase, according to EUPD Research’s latest EES Report© Europe H1 2026. The milestone signals a fundamental shift in Europe’s energy transition, as battery storage becomes critical infrastructure for renewable integration, grid flexibility and electrification across residential, commercial and utility-scale markets. Germany, Bulgaria, Italy, the United Kingdom and Spain are expected to lead Europe’s battery storage market in 2026. Bulgaria’s emergence among Europe’s leading markets demonstrates the transformative impact of EU recovery funding, highlighting growing momentum across Central and South-Eastern Europe. Growth is driven by falling battery costs, rising electricity prices, and increasing adoption of solar-plus-storage systems to maximize self-consumption and reduce energy bills. Commercial and industrial storage is gaining traction as businesses seek to reduce energy costs and optimize on-site generation, while utility-scale deployment is accelerating, supported by improving market opportunities and policy frameworks, despite persistent grid-connection and permitting challenges. The residential segment remains one of Europe’s strongest growth engines, with installations expected to increase from 11 GWh in 2025 to 15 GWh in 2026, a 36% annual increase. Germany remains the largest residential market, followed by Italy, the Netherlands, the UK and Austria. In 2025, BYD, Huawei, Sungrow and Fox ESS were the leading brands, with BYD and Huawei retaining prominent positions and together accounting for more than 30% of the total share.

Smart Power Stage Exceeds 2 A per Square Millimeter

Learn more:
infineon.com

Product Release
2026-09-07

Infineon Technologies introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon’s OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, this family delivers a power density exceeding 2 A/mm², which is claimed to set a new reference point for power stage performance in high-current AI processor applications. The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. The TDA235E5 and TDA235E0 integrate into Infineon’s end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails.

Low-Noise DC Power Supplies designed for Test Environments

Learn more:
kikusui.co.jp

Product Release
2026-09-04

Kikusui Electronics has introduced the PMX-E Series of DC power solutions for the engineers’ daily work. Each unit is equipped with communication interfaces like LAN, USB, and RS-232C. These interfaces enable seamless connection to automated test setups, data acquisition systems, and remote-control environments. PMX-E weighs approximately 5–6 kg (depending on the model), and is optimized for benchtop use. All models feature front-facing output terminals, which simplify wiring and make connecting load harnesses faster. Depending on the model the output voltage is between 18 V and 500 V delivering between 0.1 A and 5 A.

Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies

Learn more:
xppower.com

Product Release
2026-09-03

XP Power introduces the ASB320 series of 320 W fully integrated, baseplate-cooled AC/DC power supplies offering single output from 12 V to 54 VDC in an encapsulated brick format. Global ITE safety approvals, Class B emissions and a low-profile rugged mechanical design make these power supplies suitable for space-constrained industrial automation, communications, test and measurement, and analytical instrumentation equipment. Featuring a built-in EMC filter, AC fuse, and bulk storage capacitor, the units reduce external components. The efficiency of up to 94 % and baseplate cooling at operating temperatures from -40 °C to +90 °C enable operation in compact sealed or fanless systems. The ASB320 offers seven single DC output voltages: 12, 15, 24, 28, 36, 48, and 54 VDC, and features a universal input range of 90 to 264 VAC. With peak power capability of up to 360 W for 5 s, the units provide headroom for transient loads without oversizing. In addition, the ±5 % output voltage trim helps engineers optimize system performance for specific load requirements. The units offer in-built over current, over voltage and over temperature protection circuitry.

3D-PEIM 2026 Registration Now Open

Learn more:
3d-peim.org

Event News
2026-09-03

The rapid emergence of AI infrastructure is fundamentally reshaping power electronics, advanced packaging, and heterogeneous integration. Higher current densities, vertical power delivery architectures, thermal management, reliability, advanced materials, and AI-assisted design are becoming central challenges for next-generation computing systems. 3D-PEIM 2026 brings together researchers and industry leaders developing the technologies that will enable this transformation. Taking place November 16–19, 2026 at Arizona State University in Tempe, Arizona (USA), the symposium offers a technical program spanning the complete ecosystem of power electronics integration - from materials and manufacturing to system architecture and AI-driven design. This year’s program features a collection of plenary and keynote presentations addressing the rapidly evolving relationship between AI computing and power electronics. The presentations are complemented by invited talks on AI-enabled EDA, AI-driven power electronics co-design, advanced thermal solutions, integrated magnetics, heterogeneous packaging, and high-density voltage regulation, highlighting the multidisciplinary innovations driving future AI hardware. Beyond the Technical Sessions four expert-led tutorials on advanced packaging, sintering technologies, digital twins, and magnetic materials as well as an industry-academic panel discussion on key challenges in 3D power electronics packaging and manufacturing will complement the program.

PCIM Asia Shenzhen 2026 with higher international Attendance

Learn more:
pcimasia-shanghai.com

Event News
2026-09-03

PCIM Asia Shenzhen concluded its 2026 edition at the Shenzhen World Exhibition & Convention Center on 28 August. For three days 271 companies showcased across 30,000 square metres of exhibition space products and technologies from across the power electronics value chain, including solutions for e-mobility, AI data centres and renewable energy & smart energy. Alongside the exhibition, the PCIM Asia Shenzhen Conference featured 131 academic presentations by senior experts, scholars and representatives of leading global companies. Together, the exhibition and conference enabled discussion between companies, researchers and technical specialists, earning positive feedback from participants throughout the event. Added-up, 25,313 visitors attended the event, which is a 49 % increase over PCIM Asia Shanghai 2025, and 1,300 visitors (183 % increase) came from overseas. Mitsubishi Electric and Infineon Technologies supported PCIM Asia Shenzhen as Strategic Partners, with Semikron Danfoss, Fuji Electric and ROHM participating as Platinum Sponsors. The next event in PCIM's China series, PCIM Asia Shanghai, will take place from 24 – 26 August 2027 at the Shanghai New International Expo Centre in China.

50 W and 100 W DC/DC Converters with 4:1 Input Range

Learn more:
recom-power.com

Product Release
2026-09-02

RECOM has expanded its portfolio of isolated DC/DC converters with the RP50-AW and RP100-FW series. The converter families combine 4:1 input voltage ranges with robust isolation and comprehensive protection features for reliable operation in demanding environments. The RP50-AW series delivers up to 50 W output power in a compact 1×1 square inch footprint. The series supports input voltage ranges from 9-36 VDC and 18-75 VDC, offers efficiencies up to 93%, and features 2.25 kVDC isolation. In addition to single-output versions, dual-output models are also available. The operating temperature range extends from -40 °C to +105 °C, while an optional heatsink version improves thermal performance in high ambient conditions. For higher power requirements, the RP100-FW series provides up to 100 W output power with efficiencies up to 94 %. The series also supports a 4:1 input range of 9-36 VDC or 18-75 VDC. They operate in the temperature range from -40 °C to +110 °C and at altitudes up to 5000 m. Dimensions of 50.8 × 25.4 × 10.7 mm³ are achieved without heatsink, while an optional heatsink version measuring 50.8 × 26.5 × 32.2 mm³ improves thermal performance in demanding operating conditions. Both series integrate several protection functions including overvoltage, overload, overtemperature and continuous short-circuit protection, together with remote ON/OFF control supporting positive or negative logic. They both comply with current RoHS and REACH requirements. The RP50-AW and RP100-FW series are suitable for industrial control systems, test and measurement equipment, communication infrastructure and transportation-related electronics.

Collaboration on Solid-State Transformers and Sidecars for AI Power

Learn more:
infineon.com

Industry News
2026-09-02

Infineon Technologies and Skeleton Technologies, which is active in high-power energy storage systems e. g. for AI data centers, have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency, resilient power solutions for data centers. Solid-state transformers (SSTs) and high-power sidecars are increasingly important building blocks for AI data center infrastructure. They enable more efficient power conversion from grid to core and higher system resilience. Accordingly, the two companies aim to advance these technologies to improve energy efficiency and system performance throughout the power delivery chain. Under the agreement, Infineon and Skeleton will jointly explore and develop advanced architectures for the entire AI data center power chain that delivers electricity from grid to core. This includes next-generation SSTs for medium-voltage AC to high-voltage DC conversion. The companies intend to combine Infineon’s high-voltage CoolSiC™ power semiconductors with Skeleton’s expertise in power conversion systems and supercapacitor technology. The companies are also collaborating on GaN-based peak-shaving systems that combine Skeleton’s supercapacitor technology with Infineon’s CoolGaN™ power semiconductors.

High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission

Learn more:
we-online.com

Product Release
2026-09-01

Würth Elektronik is expanding its optoelectronics portfolio with the WL-OCHS high-speed optocoupler. This component is designed for high-speed digital signal transmission between galvanically isolated circuit sections. The optocoupler supports data rates from 1 MBd to 10 MBd and provides an isolation voltage of up to 5000 V_RMS. Optocouplers offer galvanic isolation of high voltages and potential differences. However, the short switching times (tpHL/tpLH) of 100 ns to 1500 ns enable the high-speed optocoupler to transmit signals with significantly lower delay than conventional optocouplers. Thanks to its high CMTI (common-mode transient immunity), the optocoupler ensures reliable signal transmission even during rapid input/output voltage changes in demanding, electrically noisy environments. In addition, a copper leadframe improves resistance to corrosion and environmental influences, significantly enhancing the robustness of the new optocoupler series. The device is suitable for microcontroller, FPGA, and DSP interfaces, as well as for serial communication interfaces such as UART, SPI, and RS-232/RS-485. Typical applications therefore include measurement and control technology, industrial electronics in high-interference environments, medical devices requiring safe electrical isolation, in addition to PLC and automation systems.

Collaboration on Power Semiconductor Solutions for EVs and HEVs

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nexperia.com

Industry News
2026-09-01

Nexperia will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in GaN and SiC semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on the existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms. The companies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems.

European Partnership with Power Electronics Distribution Company

Learn more:
semiq.com

Industry News
2026-08-26

SemiQ has announced a distribution agreement with Ibérica Semiconductores de Potencia, a Spanish-headquartered specialist in power electronics. This partnership expands SemiQ’s European reach and support for its range of high performance SiC MOSFETs and Schottky diodes. Under the deal, Ibérica will have access to SemiQ’s complete portfolio of modules, discrete and bare-die products, and will provide these with application and design support to power system developers across the entire continent. Headquartered in Madrid, Ibérica will lead the development of SemiQ’s business in Spain, while supporting customers and opportunities across Europe.

Multiaxial coreless Halleffect Current Sensor for (H)Evs

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ti.com

Product Release
2026-08-25

Texas Instruments (TI) introduced a multiaxial coreless Hall-effect current sensor designed for all hybrid electric vehicle and electric vehicle (HEV/EV) traction inverter applications. The TMCS2100-Q1 sensor offers current sensing through the combination of multiaxial measurement and a proprietary algorithm, which is said to eliminate the trade-off between precision and system size in traction inverter designs. While existing coreless solutions are limited to single-axis measurements, the TMCS2100-Q1 sensor measures magnetic fields in both horizontal and vertical directions. This multiaxial measurement is 20 times more accurate than single-axis alternatives, achieving displacement error of less than 1 % at 0.4 mm movement and as low as 0.25 % at 0.1 mm. This level- of precision improves the EV powertrain torque control loop, maximizing efficiency and power delivery across varying load and thermal conditions. TI’s current sensing technology measures both axes simultaneously. Vibration during vehicle operation creates movement between the sensor and conductor, causing single-axis, differential coreless sensors to lose accuracy. The TMCS2100-Q1 sensor reduces vibration-induced error by measuring magnetic fields in both horizontal and vertical axes at once. By eliminating the magnetic core without sacrificing precision, the TMCS2100-Q1 sensor enables smaller, more power-dense traction inverter designs, helping automakers build EVs that are more efficient.

650 V IGBTs

Learn more:
rohm.com

Product Release
2026-08-25

ROHM has developed its 4^th Generation of 650 V IGBTs, which is well-suited for automotive electric compressors and HV heaters, as well as for inverters in industrial equipment. The automotive-grade 650 V-class products operate with V_CE(sat)= 1.55 V and comply with the AEC-Q101 automotive. The devices can withstand short-circuits for 7 μs at T_j = 25 °C. The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR / RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website.

German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company

Learn more:
infineon.com

Industry News
2026-08-24

Infineon Technologies has acquired C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology is said to complement Infineon’s portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The transaction is expected to close in the third quarter of calendar year 2026. This acquisition aims to strengthen Infineon’s position in power solutions for AI data centers and create a center of excellence for digital power technologies in India. C2i Semiconductors brings expertise in software-defined power management and system-level power architectures. Software-defined power solutions combine advanced power semiconductors with intelligent digital control and software algorithms to optimize power conversion, regulation and system performance in real time. As increasingly powerful AI processors create highly dynamic and rapidly changing power demands, power delivery systems must respond faster and more precisely to sudden load fluctuations while maintaining efficiency and system stability. By adding intelligence to the power delivery architecture, software-defined solutions help data center operators improve efficiency, reduce power losses, and support the increasing power density requirements of next-generation AI processors. C2i Semiconductors’ technology takes a system-level approach to power delivery, spanning the path from grid to core and enabling more intelligent and adaptive power architectures for AI infrastructure.

1000 V Wire-to-Board Connector for Automotive Powertrains

Learn more:
hirose.com

Product Release
2026-08-24

The high-voltage ZE150HV Series wire-to-board connector from Hirose is now commercially available. Suitable for electric vehicle (EV) and hybrid electric vehicle (HEV) powertrains, the connector features a 4.5 mm pitch and supports 1000 V AC/DC, 10 A per pin, and operating temperatures up to 125 °C. Engineered to meet IEC 60664 standards (Pollution Degree 2, altitude 6,000 m), the ZE150HV combines reliable electrical performance with mechanical stability. Traditionally, there is a standard distance required between pins of 6.8 mm to achieve 1000 V. The ZE150HV Series features a patented design that reduces this required distance to 4.5 mm. By placing proprietary ribs between the contacts, Hirose has reduced the size of the connector to support miniaturization of powertrain and other high-voltage systems. The double-spring structure increases pressure, strengthening the contact force and stabilizing the connection under severe vibration. A housing and built-in connector position assurance (CPA) mechanism helps prevent incomplete mating. This reduces the risk of electrical arcing or exposure, especially important in high-voltage environments.

Acquisition of VPD Company

Learn more:
navitassemi.com

Industry News
2026-08-24

Navitas signed a definitive agreement to acquire Claros, a power management solutions company developing vertical power delivery (VPD) and integrated voltage regulator (IVR) technology for next-generation AI data centers, in a transaction valued at up to approximately $232.8 million. Navitas’ potential acquisition of Claros would extend the Company’s AI infrastructure portfolio from the grid all the way to the xPU by bringing VPD and IVR capabilities that can directly power the high-current, high-speed processors at the heart of AI systems. On the last step of 800 V HVDC architectures, traditional voltage regulator modules (VRMs) push power sideways across the board, and as xPUs demand thousands of amps and near-instant response times, this lateral approach hits what Navitas refers to as a "power wall". Bandwidth and compute performance are constrained by the limitations of existing power delivery systems. Through the combination of Navitas and Claros, the company expects to break through that wall from grid-to-xPU. Claros’ VPD and IVR technologies stack power conversion, drive, control, and passives into a single, compact package. By placing this solution directly beneath or inside the chip package or printed circuit board, power travels only millimeters instead of inches. The result is ultra-fast transient response, significantly lower impedance, higher efficiency at sub-volt levels, and the power density required for the next generation of AI compute. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close before year-end, subject to customary closing conditions, including applicable regulatory approvals.

Zait Akcam appointed as Managing Director of GVA

Learn more:
gva-power.de

People
2026-08-22

GVA Leistungselektronik has appointed Zait Akcam as its new Managing Director. Mr. Akcam is already well known to many customers and partners through his many years as Head of Sales at the Mannheim/Germany-based company. With more than 30 years of experience in the semiconductor industry and his knowledge of international markets, he brings considerable industry and management expertise to his new role. In his new position, Akcam will drive the continued development of GVA, with a particular focus on the needs of customers and partners. One of his key priorities will be the ongoing development of the company’s product and service portfolio. The aim is to further strengthen GVA’s position as a trusted partner in power electronics and to continue providing customers with innovative solutions combined with the high level of service they have come to expect.

650 W Thick Film Power Resistors

Learn more:
vishay.com

Product Release
2026-08-20

The power capabilities and compact package of these devices by Vishay allow designers to reduce the number of parallel resistors required. Their performance is supported by a "cold system" baseplate design that enables efficient heat transfer to an external heatsink, maintaining stable operation over a wide temperature range from -55 °C to +155 °C. RPWA 650 series devices integrate a power resistor and optional embedded NTC temperature sensor in a single housing. Customizable cabling and an easy-mount design with self-calibrating pressure eliminate the need for board-level soldering, reduce wiring and assembly complexity, and enable faster plug and play integration in power modules and assemblies. Available in a range of resistance values from 6.2 Ω to 1 MΩ, with tolerances down to ± 5 %, the RPWA 650 series supports a variety of circuit functions, including precharge, discharge, active discharge, power conversion, and snubber operations. The devices are suited for automotive, energy, industrial, medical, and avionics systems used in harsh environments. Their maximum operating voltage is specified up to 6000 V_DC with a dielectric strength to 7000 V_RMS, and typical self-inductance of ≤ 40 nH. For high voltage and fast-switching circuits, this combination enables accurate energy dissipation and minimizes transient overshoot. The devices also offer a pulse energy capability, supporting repetitive operation up to 3.5 J per pulse for 50 μs pulses. The RoHS-compliant resistors are pending AEC-Q200 qualification.

Collaboration on Battery Management Systems and Integrated PowerBox Solutions

Learn more:
schaeffler.com

Industry News
2026-08-20

Schaeffler and CATL have signed a memorandum of understanding (MoU) in the field of e-mobility for the joint development of Battery Management Systems (BMS) and "X-in-1" Integrated PowerBox (IPB) solutions. The collaboration builds on an already secured customer project and addresses the growing demand for electrification solutions in the European market. Both companies are pursuing a long-term partnership.

18 V GaN FET e.g. for Next-Generation AI Power Architectures

Learn more:
epc-co.com

Product Release
2026-08-20

Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that allows it to replace MOSFETs with ratings up to 25 V. AI power architectures are transitioning to 800 V DC power distribution, adopting 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the EPC2370 delivers a benchmark 101 A continuous current rating, 0.28 mΩ typical R_DS(on), 26 nC gate charge in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package. The EPC2370 is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. Its 18 V continuous and 22 V transient ratings provide voltage margin for reliable operation while enabling peak efficiencies of 98 % and full-load efficiencies of 97 % in high-density power modules. Beyond AI servers, the EPC2370 is also suited for high-current DC/DC converters used in high-performance computing, telecommunications infrastructure, and advanced industrial power systems. To accelerate evaluation and product development, EPC also offers the EPC90168 evaluation board. Measuring 2" × 2", the EPC90168 features two EPC2370 GaN FETs configured as a half bridge. The board includes all critical components and an optimized layout to maximize switching performance. It also provides multiple probe points for convenient waveform measurements and efficiency evaluation.

1 W Isolated DC/DC Converters for Medical and ITE Applications

Learn more:
belfuse.com

Product Release
2026-08-19

Bel Fuse launched its PTM1-S Series, a family of 1 W isolated DC/DC converters engineered to meet the growing demand for medically certified, high-isolation power in compact form factors. Housed in an encapsulated SIP-7 package, the series is built for medical instrumentation, harsh-environment equipment, and industrial control systems that require both dual medical and ITE safety certification in a single part. The PTM1-S Series offers 6000 V_DC isolation and reinforced insulation rated for 300 V_AC, protecting against surges and cross-circuit faults in applications where isolation integrity is critical. The series is dual certified to UL/IEC 62368 for information technology equipment and EN 60601 and 2xMOOP for medical use, giving engineers the flexibility to qualify a single part number across both medical and industrial designations rather than stocking separate solutions for each. The converters are rated for continuous operation across an extended -40 °C to +100 °C temperature range, making them well suited to harsh outdoor and industrial environments as well as controlled clinical settings. With a 1:1 input-to-output voltage ratio, the initial lineup spans 5, 12, 15, and 24 V_DC input options with 5 and 12 V_DC single outputs, covering the input rails most common in medical and industrial control platforms.

Palm-sized Split Core Current Sensors with Accuracy up to 0.01 %

Learn more:
tmi.yokogawa.com

Product Release
2026-08-19

Yokogawa Test & Measurement released its second-generation of AC/DC split core current sensors, the CT500SA and CT200SA. Designed specifically for space-constrained environments, such as in-vehicle xEV testing, they offer accurate current measurements for the 200 A and 500 A ranges. The sensors are compatible with both power analyzers and waveform measurement instruments. The main sensor unit of both devices measures 110 mm width × 62 mm height × 25 mm depth. Each features a single unlock-and-open button for one-handed clamp-on installation, while the body includes both an M4 screw hole and a cable tie slot to secure the sensor in place. The CT500SA and CT200SA guarantee accuracy of ±0.1 % from -40 °C to 85 °C. Within 23±5 °C range this improves further still, achieving a peak accuracy of ±0.09 % of reading +0.01 % of full scale. Both models guarantee accuracy “one order of magnitude higher than that of conventional current sensors”, equivalent to through-hole types but with the convenience of clamp-on installation. Available frequency bandwidths differ between the two models. The CT500SA delivers a bandwidth of 500 kHz (−3 dB), while the CT200SA extends to 1 MHz (−3 dB). The CT200SA and CT500SA can also measure switching frequencies, used for motor inverter validation and requiring wideband measurement. Both models hold a phase accuracy of ±0.1° (0.1 Hz ≤ f ≤ 1 kHz). Major Target Markets are EV/xEV, Automotive, Renewable energy: Photovoltaic (PV) / solar and HVAC.

Radiation-Hard Power GaN FETs for Space Computing

Learn more:
epc.space

Product Release
2026-08-18

EPC Space announced three eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems. The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads. All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm²/mg, and neutron > 4E15 n/cm². The EPC7050PCSH is a 15 V device with 101 A continuous current capability and typical R_DS(on) of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with typical R_DS(on) of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability and typical R_DS(on) of 0.5 mΩ. All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5 V – 12 V, delivering an R_DS(on) × Q_G figure of merit to enable higher-frequency and higher-efficiency operation. The devices also target point-of-load buck converters/IVRs supplying 0.8 V core voltage for the processor.

Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules

Learn more:
sumibe.co.jp

Product Release
2026-08-18

Sumitomo Bakelite has developed a high-power-density 3D SiC-MOSFET power module with a resin-insulated dual-layer structure through joint research with Tohoku University. By optimizing the thermal expansion characteristics and elastic modulus of the resin insulated substrate and epoxy molding compound, Sumitomo Bakelite significantly reduced module warpage. In addition, the adoption of an Ag semi-sintering bonding material improved bonding reliability with the heat sink. By replacing conventional ceramic insulated substrates with resin-insulated substrates, the mismatch in the coefficients of thermal expansion between the substrate and copper is significantly reduced, suppressing power module warpage to 20 μm or less. The use of resin-insulated substrates suppresses module warpage caused by differences in thermal expansion between substrate materials. This enables a thinner Thermal Interface Material (TIM) layer between the module and the heat sink, significantly reducing thermal resistance while ensuring highly reliable bonding to the heat sink and significantly improving mountability. Ag semi-sintering TIM enables low-temperature, pressureless bonding, unlike conventional soldering and sintered-silver bonding processes that require high temperatures and high pressure, thereby reducing the thermal stress applied to the module. In addition, its high adhesion and low elastic modulus enable a bond-line thickness of less than 100 μm while significantly improving the reliability and durability of the bonding layer between the module and the heat sink. Compared with industry-standard solutions, this technology is said to make it possible to reduce the volume of power units by approximately 50 %.

2027 IEEE Electronic Components and Technology Conference: Call for Papers

Learn more:
ectc.net

Event News
2026-08-17

The 2027 IEEE Electronic Components and Technology Conference (ECTC), the technical conference and product exhibition for the world’s semiconductor packaging industry, has announced a Call for Papers. ECTC 2027 will take place June 1-4, 2027 at the Gaylord Rockies Resort & Convention Center in Denver, CO/USA. More than 2,500 scientists, engineers and businesspeople from around the world are expected to attend. The deadline for abstract submissions is October 5, 2026. The ECTC 2027 technical program will address the latest developments, trends and applications in a range of advanced packaging topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, chiplet architectures, hybrid bonding, wafer-level packaging (WLP) and panel-level packaging (PLP), fan-out and fan-in packaging, flip-chip technologies, integrated photonics and optoelectronics, LEDs, 5G, quantum computing and systems, and other emerging technologies in electronics packaging. Previously unpublished, non-commercial paper abstracts are requested in areas like Applied Reliability, Assembly and Manufacturing Technology, Electrical Design and Analysis, Emerging Technologies, Interconnections, RF, High-Speed Components & Systems, Materials & Processing, Packaging Technologies, Photonics and Thermal/Mechanical Simulation & Characterization.

Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications

Learn more:
industry.panasonic.eu

Product Release
2026-08-17

Panasonic Industry Europe released the ECWFJ series of metallized polypropylene film capacitors. The series is aimed at engineers working across industrial and automotive power electronics (it is qualified to AEC-Q200 standards) who require dependable performance under demanding environmental conditions. The ECWFJ series demonstrates resistance to moisture, maintaining stable operation under conditions of 40 °C and 95 % relative humidity for up to 1.000 hours. Typical application areas include electric mobility systems such as DC/DC converters, on-board chargers and e-compressors, along with solar inverters and EV charging infrastructure. The series is also designed for use in industrial power supplies, LED lighting, smart meters and embedded power systems, where consistent electrical performance and durability are essential. Technically, the ECWFJ series covers DC voltage ratings from 600 V up to 1.100 V. Capacitance values range from 1 μF up to 12 μF. The capacitors operate across a temperature range from -40 °C up to +110 °C, with the 1.000 V variant rated up to 105 °C. The devices are engineered to withstand thermal shock from -55 °C up to 85 °C over 1.000 cycles and can tolerate maximum ambient temperatures of up to 125 °C for limited durations. Panasonic’s proprietary patterned metallization with an integrated fuse mechanism helps ensure stable capacitance over the lifetime of the component and enhances overall system reliability. The design is complemented by a flame-retardant plastic enclosure and non-conductive resin, supporting compliance with UL and other regulatory standards. In addition, the capacitors are fully compliant with RoHS requirements.

Acquisition of High-Voltage Product Line

Learn more:
deantechnology.com

Industry News
2026-08-17

Dean Technology (DTI) and HVP High Voltage Products of Munich, Germany, have announced an addition to their catalog of products. DTI and HVP have jointly acquired the high voltage measurement and driver businesses of North Star High Voltage (NSHV), a manufacturer of high voltage probes. NSHV has developed and defined high voltage measurement for the last 24 years. Their high voltage probes are designed to provide high accuracy while providing wide bandwidth capability, rugged packaging, and overall convenience. Two main types of probes are available – the PVM series designed for portability, and the VD series optimized for long life and accuracy. Both types of probes can be used with 1 MΩ input oscilloscopes standard, or with meters of various input impedances.

Digital Isolators in Quad-Channel Configuration

Learn more:
toshiba.semicon-storage.com

Product Release
2026-08-13

Toshiba Electronics Europe has expanded its DCL34xx0B series of standard digital isolators with four quad-channel devices for industrial automation equipment. These devices achieve a typical current consumption of 0.2 mA per channel while supporting data rates of up to 25 Mbit/s. Applications include programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor drives, inverters and switching power supplies. The DCL34xx0B series operates from supply voltages of 2.25 V to 5.5 V and provides a minimum isolation voltage of 3000 V_rms. Housed in a SSOP16 package, the devices support operation across a temperature range of -40 °C to +125 °C. Using Toshiba’s magnetic-coupling isolation technology, these devices provide isolated signal transmission with a common-mode transient immunity (CMTI) of 30 kV/μs (min). The additions comprise the DCL340L0B and DCL340H0B with four forward channels and zero reverse channels (4:0), and the DCL342L0B and DCL342H0B with two forward channels and two reverse channels (2:2).

Single and Three Phase Common Mode HEMP Power Line Filters

Learn more:
emisglobal.com

Product Release
2026-08-12

The EMC solutions provider EMIS offers a range of EMI powerline filters designed to protect sensitive electrical and electronic equipment against High-Altitude Electromagnetic Pulse (HEMP) and conducted Electromagnetic Interference (EMI/RFI) resulting from high-energy electromagnetic events, including nuclear-induced electromagnetic disturbances and lightning-related transients. EMIS SMF913 and TMF913HEMP EMI Power Line Filters provide single phase and three phase configurations, and suitable for AC and DC facility power applications. With current ratings from 6 to 3000 A, they are able to support applications ranging from control panels and communication equipment to high-current facility power distribution systems. The EMIS HEMP filter design features Integrated 80 kA peak surge-current protection (8/20 μs) which provides protection against lightning-induced surges and power switching transients. Standard Performance models provide 100 dB insertion loss from 30 MHz to 18 GHz, followed by 90 dB attenuation up to 40 GHz. Extended-performance models provide 100 dB attenuation from 14 kHz to 40 GHz, offering enhanced protection against both low-frequency conducted interference and high-frequency electromagnetic disturbances. Built-in discharge resistors safely dissipate energy stored in internal capacitors after power is switched off, improving operator safety and reducing maintenance hazards. The EMIS HEMP filters are designed in accordance with the requirements of MIL-STD-188-125-1/2 and MIL-PRF-15733J, supporting HEMP-hardened facility and high-performance EMI/RFI protection applications and tested in accordance with MIL-STD-188-125-1/2 to withstand specified E1 Short Pulse and E2 Intermediate Pulse current injection levels under common-mode and line-to-ground conditions, with E1 residual current limited to ≤10 A and no damage to the filter during E2 testing.

Silicone-free Thermal Conductive Paste

Learn more:
fischerelektronik.de

Product Release
2026-08-11

To compensate for even the smallest air pockets between the contact pairs, Fischer Elektronik is expanding its product range of thermal interface materials to include a high-performance, silicone- and solvent-free thermal conductive paste. This thermal paste, with the product code WLPF 36 035, has a thermal conductivity of 3.6 W/m•K and is CRM-free; it is therefore not subject to any additional training requirements. The paste contains no metallic fillers, is electrically insulating and is claimed to offer high long-term stability with good creep properties. The WLPF 36 035 thermal grease can be used within a temperature range of -60 °C to +100 °C and is supplied in a 35 g tin. Other types and sizes of packaging can be produced to customer specifications on request.

Manufacturing Facility in Guadalajara, Mexico, opened

Learn more:
indium.com

Industry News
2026-08-11

Indium Corporation has opened a manufacturing facility in Guadalajara, Mexico. This 1,230-square-meter facility will manufacture solder paste, cored wire, and wave flux products to support customers throughout the Americas and global markets. Production will initially focus on Indium Corporation’s best-selling paste series Indium8.9HF and Indium10.8HF. This marks the first phase of the company’s long-term manufacturing investment in Mexico, with more capabilities planned as the facility grows to meet customer demand. At full capacity, the Guadalajara facility is expected to produce approximately 18–20 metric tons of solder paste per month. In addition to manufacturing and operational roles, the site will house customer service and technical support teams.

TVS Diodes for simplified ISO 7637 Load-Dump Protection

Learn more:
littelfuse.com

Product Release
2026-08-11

Littelfuse announced the TPSMD-FL Series FlatSuppressX™ TVS Diodes, a family of automotive-grade transient voltage suppression devices designed to simplify ISO 7637-2 Pulse 5b load-dump protection for 12 V vehicle electronics. Unlike conventional TVS diodes that can allow transient voltages to rise to levels requiring additional protection circuitry, the TPSMD-FL Series leverages proprietary FlatSuppressX™ technology to maintain a low, flat, and stable clamping voltage profile during high-energy transient events. This enables designers to meet demanding automotive load-dump requirements with lower clamping fewer external components, reducing design complexity and PCB space requirements. Rated for 3000 W peak pulse power dissipation and housed in a compact surface-mount DO-214AB package, the TPSMD-FL Series is optimized to protect sensitive automotive electronics from high-energy surges. The devices are AEC-Q101 qualified and designed specifically for applications requiring compliance with ISO 7637-2 Pulse 5b load-dump standards. They provide IEC 61000-4-2 ESD protection up to 30 kV air and contact discharge. The TPSMD-FL Series is suited for automotive applications operating on 12 V power rails.

Quad-Channel Digital Isolators for High-Temperature Applications

Learn more:
toshiba.semicon-storage.com

Product Release
2026-08-06

Toshiba Electronics Europe has expanded its standard digital isolator line-up with the DCL54xx01A series, comprising ten quad-channel devices that support data rates of up to 150 Mbps and operate at temperatures up to 125 °C. Target industrial automation applications include programmable logic controllers (PLCs), I/O interfaces, motor control, inverters and switching power supplies. The DCL54xx01A series operates from 2.25 V to 5.5 V and provides an isolation voltage of 5000 V_rms for one minute. Typical propagation delay is 10.9 ns, while typical pulse-width distortion is 0.8 ns. The devices are housed in an SOIC16-W package and operate from -40 °C to +125 °C, making them suitable for industrial systems in high-temperature environments. The series is available in 4:0, 3:1 and 2:2 forward/reverse channel-direction configurations. Devices are also available with different default output states and enable-control options.

Power Operational Amplifier Family

Learn more:
apexanalog.com

Product Release
2026-08-06

Apex Microtechnology released three precision power operational amplifiers - the PA167, PA168, and PA169 - delivering up to 20 % higher thermal performance than previous generations. The PA167 is a high-voltage MOSFET operational amplifier featuring a monolithic amplifier core designed for applications requiring high output voltage or output current density. Operating up to 205 V, the device delivers 1 A of continuous output current in the standard version and 2 A in the A-grade version, with up to 6 A peak current and 33 W of internal power dissipation. The PA168 operates up to 200 V with 8 A of continuous output current, 12 A peak current, and 52 W of internal power dissipation. Separate power supplies for the amplifier core and output stage allow designers to optimize voltage swing and overall system efficiency. The PA169 integrates two independent high-voltage amplifier channels into a 52-pin QFP package, delivering dual 200 V, 2 A continuous (6 A peak) amplifier channels with up to 52 W of internal power dissipation for applications requiring multiple high-performance amplifier channels in a single package. All three devices utilize Apex’s monolithic MOS technology and incorporate integrated protection features including temperature-compensated current limiting with over-current flag indication and amplifier disable functionality. Housed in a 20 mm × 20 mm PQ package, the devices are targeted towards applications like high-density voltage and current sources, electrostatic transducers, beam and mirror deflection systems, deformable mirror focusing, piezoelectric positioning, and other precision motion control applications.

2200 V GaN Technology

Learn more:
power.com

Product Release
2026-08-05

Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200 V, which is according to the company "far exceeding the voltage capabilities of all other commercially available GaN technologies". This positions PowiGaN well for high-voltage data centers, EVs, renewable energy and HVDC infrastructure as they leverage higher-voltage bus architectures in search of greater power density. GaN power switches are steadily supplanting silicon transistors in a wide range of power conversion applications thanks to their higher efficiency and switching frequencies. However, GaN technology must keep pace with data center, EV, renewables and HVDC infrastructure roadmaps calling for higher voltages and greater power density. Alternatives include lower-frequency silicon carbide or arrays of stacked, lower-voltage GaN devices. PowiGaN ICs rated at 1700 V are already being designed into single-stage data center auxiliary power applications, while 1250 V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800 V_DC data centers. In addition to data centers other possible applications are e.g. EVs, photovoltaic inverters and battery-energy storage systems.

Custom Magnetics Research and Development Center opened in Northern Germany

Learn more:
bourns.com

Industry News
2026-08-05

Bourns has opened a research, development, and design center for its custom magnetics operations in Rosdorf near Göttingen/Germany. The facility brings together the full 44-person engineering, prototyping, and design team - the same group that has been developing custom magnetic components at this site since Bourns acquired Kaschke Components in 2021 - in a renovated 3,000-square-meter building. Production of inductive components continues at Bourns’ manufacturing sites in Tunisia. The move comes after Bourns wound down ferrite production at the team’s previous location, leaving it in a building that was too large for an engineering and design operation. Rather than adapt the old space, Bourns chose to start fresh. The center includes a prototype workshop with separate areas for measurement technology and qualification equipment - tools the engineering team needs to move from concept to tested design without leaving the building. After renovation there are now 17 offices where each engineer has a permanent desk, a soundproof booth for uninterrupted work, two meeting rooms, and a work café - all designed with the home office as the benchmark to beat. Heating and cooling come from a geothermal system feeding two heat pumps. Rainwater drains into a surrounding basin and two on-site ponds rather than the municipal system. Bourns also added electric vehicle charging stations for employees. All renovation work - interior fit-out, electrical, painting, fire safety - was handled by local companies based in the German federal state of Lower Saxony.

Silicon Photovoltaics Make Power Generation in Space More Cost-Effective

Learn more:
ise.fraunhofer.de

Industry News
2026-08-04

Source Energy and the Fraunhofer Institute for Solar Energy Systems ISE have jointly developed a product line for space satellites based on silicon solar cells. The solar arrays use a special interconnection technology. Combined with inexpensive silicon solar cells, this enables modules at much lower costs compared to standard III-V technology currently dominating the space sector. The high cost and limited availability of solar cells based on III-V materials are major constraints for commercial missions, particularly Low Earth Orbit (LEO) satellites. The resulting solar modules are compact and lightweight: 64 g and 629 cm², (321 mm by 209 mm). The average power output of the prototypes was 15.6 W – with modules achieving 16.1 W – and an average active area efficiency of 18.8 % (AM0 at 25 °C). At 252 W/kg, the module’s specific power is competitive with other silicon modules in its class. The silicon solar cells are interconnected using shingle-matrix technology, where individual solar cells are cut into strips and arranged with certain overlap and spacing relative to one another, like brickwork. An electrically conductive adhesive bonds the solar cells together. The machine manufacturer M10 Solar Equipment GmbH has developed an industrial stringer for shingle-matrix technology. If the solar panel is damaged – for example, by a small meteorite or space debris – the matrix arrangement of the solar cells allows the current to simply flow around the damaged area. Rows and columns of solar cells in the layout can be flexibly adjusted depending on the satellite’s voltage and current requirements.

Wide-Terminal Metal Foil Current Sense Resistors

Learn more:
bourns.com

Product Release
2026-08-03

Bourns announced the CFG-A Series Wide-Terminal Metal Foil Current Sense Resistors, available in 0508 and 0612 footprints. Rated up to 2 W (0612 footprint rated at 2 W at 70 °C; 0508 rated up to 1.5 W), and covering a resistance range of 1–30 mΩ, the CFG-A Series is AEC-Q200-compliant and designed for automotive power electronics, motor drives, and other high-reliability applications where accurate, thermally stable current measurement is required. Automotive electrification, spanning 12 V to 48 V mild-hybrid architectures and beyond, is raising current sensing accuracy requirements while simultaneously compressing available board space. This metal foil element in the CFG-A Series delivers a TCR down to ±50 ppm/°C for values ≥5 mΩ (model-dependent), maintaining measurement accuracy across the -55 °C to +155 °C operating range and better stability under sustained load. The wide-terminal geometry lowers thermal resistance from the resistive element to the PCB, reducing localized heating and improving long-term drift performance. Its value range spans from 1–10 mΩ (CFG0508A) and 1–30 mΩ (CFG0612A) with ±1% and ±5% tolerances.

President of Danfoss Power Electronics appointed

Learn more:
semikron-danfoss.com

People
2026-08-01

Danfoss Power has appointed Kern Jain as President of Danfoss Power Electronics. He most recently served as Segment CFO of Danfoss Power Electronics and Drives and brings more than 20 years of experience in global technology and pharmaceutical companies. Mr. Jain has started in his new role as President of Danfoss Power Electronics on 1 August 2026. He succeeds Dominic Dorfner, who has left the company at his own request. Over the past months, the two worked closely together to ensure a smooth handover, allowing Jain to meet customers and colleagues ahead of his official start. The Danfoss business unit develops and markets power electronics products and solutions under the established Semikron Danfoss brand. The leadership transition coincides with the renaming of the business unit from Semikron Danfoss to Danfoss Power Electronics, reflecting being part of the Danfoss Group’s core electrification business. The established Semikron Danfoss brand will be retained for products and solutions. Within the Danfoss Group, the Power Electronics and Drives segment operates two distinct businesses: Danfoss Drives and Danfoss Power Electronics.

High-Voltage Power Supply for High-Precision Applications

Learn more:
industrial-eu.dbk-group.com

Product Release
2026-08-01

DBK David + Baader has expanded its portfolio with Vantys, a high-voltage power supply designed for high-precision measurement, analytical, and testing systems. Vantys targets applications where even the smallest deviations in output voltage can directly affect measurement accuracy, process stability, and system availability. The power supply features a fast and stable regulation, enabling rapid adaptation to changing operating conditions. At the same time, it offers integration flexibility through analog and digital interfaces as well as SCPI-compatible control. This simplifies integration into existing systems and reduces engineering effort. Typical applications include medical technology systems such as X-ray and CT equipment, as well as analytical and scientific applications including mass spectrometry and electron microscopy. The power supply is also suitable for security and inspection systems, such as X-ray screening equipment, and industrial processes utilizing ionization technology. In addition to precision and regulation performance, long-term system availability was a key development focus. With a design lifetime of at least 50,000 hours, a wear-free solid-state architecture, and integrated self-diagnostics and safe-state functions, Vantys helps reduce maintenance requirements and unplanned downtime. The system is based on a scalable architecture and can be configured for different voltage ranges. Development is carried out using automotive-grade components.

"Engineer Social Hub": Engineers supporting Engineers

Learn more:
rohm.com

Industry News
2026-07-30

ROHM launched the English-language version of Engineer Social Hub, an online platform designed to make the company’s technical information, know-how, and support more accessible to engineers. Engineer Social Hub brings together ROHM’s technical content related to semiconductor products and solutions in one place. Through product-specific FAQs and discussions, as well as a chatbot, users can search for solutions to technical questions and obtain direct support from ROHM engineers. Previously, when users encountered technical challenges, they often needed to contact ROHM individually or make inquiries through distributors. Via the Engineer Social Hub, users can now access ROHM’s technical information and know-how online – anytime and from anywhere. FAQs and discussions on the site can be read and searched without logging in. If users are unable to find the information they need, they can register as members and post questions in discussions, enabling them to explore solutions in greater depth. The site also provides documents and videos explaining how to use Engineer Social Hub. Going forward, ROHM will continue to evolve Engineer Social Hub into a community in which not only ROHM and users, but also users themselves, can communicate with one another to generate new ideas and solutions. Through this initiative, ROHM aims to contribute to solving engineers’ technical challenges by creating a site where engineers connect, create, and collaborate.

Harnessing Leakage Inductance

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we-online.com

Product Release
2026-07-29

Würth Elektronik is expanding its WE-MCRI product series with the 1090HL variant (HL = High Leakage), a coupled inductor specifically designed to improve the performance of SEPIC, ZETA and Ćuk converters. This double choke takes an unconventional approach by deliberately harnessing leakage inductance, which is normally treated as a parasitic element in conventional designs. The coupled inductor enables more effective filtering for improved EMC performance with a far more compact design. By using the molded double choke, which measures 11 × 10 × 9 mm³, ripple current reduction can be achieved with a lower inductance value. Cost and space are reduced compared with using two separate inductors. This special component also requires a smaller AC coupling capacitor, without sacrificing efficiency while enabling a more compact design. As a molded coupled inductor, this component delivers temperature-stable and soft saturation performance.

12 V Automotive eFuse supports Software-defined Vehicles

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infineon.com

Product Release
2026-07-29

Infineon Technologies has expanded its automotive power distribution portfolio with the SPOC™ Wire Guard BTS80009 SWPx 1ES, a 12 V automotive eFuse with SPI interface. As the first member of a smart power switch family, it combines a protected high-side switch with integrated I²t wire protection, software configurability, and advanced diagnosis. It is designed for new E/E architectures that support SDV concepts with over-the-air updates. The SPOC Wire Guard BTS80009 SWPx 1ES automotive eFuse provides failure isolation within µs as well as current sensing, avoiding overdimensioning of the wire diameter compared with traditional melting fusesFor permanently powered loads, the product features a dedicated idle mode with a power consumption of a few μA while maintaining full protection. Its 24-bit SPI interface is daisy-chain-capable. Supporting platform reuse across vehicle variants, the configuration and protection parameters can be adjusted in software for each variant. In addition, SPOC Wire Guard devices provide real-time status, pre-warning indicators, and other diagnostics. SPOC Wire Guard also addresses growing needs for features supporting ADAS and enables fail-operational capabilities for L2++ to L5. It is offered as a Safety Element out of Context (SEooC) for use in systems up to ASIL-D in accordance with ISO 26262, with an integrated non-volatile memory (NVM) to configure an application-specific safe state. It can autonomously react to supply-voltage drops caused by load faults to protect the supply and is available in four variants with a scalable feature set (A, I, P, and F) supporting currents up to 34.5 A.

Current Transducer with PPM-Class Precision

Learn more:
danisense.com

Product Release
2026-07-28

Danisense announced a high-precision DP12IP current transducer designed for isolated DC and AC current measurement in demanding PCB-mounted power electronics applications. Based on the company’s closed-loop compensated fluxgate technology, the DP12IP series combines ppm-class accuracy with a maximum linearity error of 10 ppm and high long-term stability in a PCB-mount package featuring a form factor of 32 mm and weighing 250 g. This allows for integration into 1U power supplies and other space-constrained equipment. The transducer supports current measurement up to 18 A and accommodates measurement resistors up to 100 Ω at full scale. It uses fixed excitation frequency and second harmonic zero-flux detection for current measurement. Typical applications include magnet power supplies for particle accelerators, stable precision power supplies, precision servo drives for motion control, battery test benches, battery emulators, and power measurement and power analysis systems.

Software for Three-Phase Power Analysis on MXO Series Oscilloscopes

Learn more:
rohde-schwarz.com

Product Release
2026-07-23

Rohde & Schwarz has introduced the R&S MXO-K333 software option for three-phase power analysis on its MXO series oscilloscopes. The software adds in-depth measurement and analysis functions for testing and debugging three phase power systems, drives and inverters. Available for all four and eight channel models of the MXO 3, MXO 4, MXO 5 and 5C oscilloscopes, it supports the analysis of voltage and current signals in three-phase AC systems. This test solution keeps the captured waveforms visible during measurement, allowing engineers to review power values and check transient behavior in the same instrument. Other oscilloscope functions such as math, spectrum analysis, measurement tracking and zone trigger remain available for further analysis. A guided setup wizard assigns the oscilloscope channels to the voltage and current probes used for the three-phase analysis. It verifies the wiring and supports common two-wire, three-wire and four-wire configurations (2V2A, 3V3A and 3VN3A). After setup, the software provides cycle-by-cycle calculations for RMS values, power factor, active power, reactive power and total power. By defining the input and output configuration, users can also calculate the system’s three-phase efficiency. Additional analysis views include phasor display, harmonic analysis and THD measurements in line with IEC 61000-3-2 and MIL-STD-1399. As an oscilloscope-based solution, the R&S MXO-K333 enables engineers to correlate three-phase power results directly with the underlying voltage and current waveforms in real time. This is especially valuable during R&D and debugging, when power behavior often must be analyzed alongside switching events, transients, control signals and communication activity.

Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption

Learn more:
navitassemi.com

Industry News
2026-07-23

Navitas Semiconductor and Magnachip Semiconductor, a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets. Under the terms of the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar™ (TAP) technology to enter the HV and UHV SiC markets. The license covers 1200 V, 2300 V, 3300 V and higher voltage GeneSiC technologies, enabling Magnachip to build on Navitas’ SiC device platforms for next-generation power conversion applications. Magnachip will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified, and internalized at Magnachip’s fab in South Korea. The companies expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems. The companies also stated that the agreement encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later.

High-Precision Power Analyzer

Learn more:
tmi.yokogawa.com

Product Release
2026-07-22

Yokogawa introduced the WT1500 power analyzer for high-voltage, multi-functional measurement within the renewable energy and xEV markets as well as for semiconductor and battery applications. Operating with an input voltage of 2000 V_DC, its four measurement channels fit within a 2U (approx. 88 mm), 19-inch chassis, making it suitable for the rack-mount and PC controlled test environments. Resolver signal input support enables engineers to conduct motor evaluation tests without needing additional equipment, while multi-unit synchronization capabilities will later allow up to 5 units to connect, for a maximum of 20 power channels. The WT1500 achieves a total power accuracy of ±0.038 % (DC, 50/60 Hz) and low-power-factor accuracy of ±0.07 % of S at 50/60 Hz and supports two types of input elements, High Voltage (HV) and Wide Bandwidth (WB). The HV element supports direct measurement up to 2000 V_DC and 300 kHz, well-suited for high-voltage PCS and ESS applications. The WB element supports up to 1000 V with a 2 MHz bandwidth, crucial for measuring the complex, high-frequency waveforms generated in today’s xEV motors. Both inputs share a common sensor input and can be mixed in a single unit. The instrument supports four power measurements and four motor evaluations, including both encoder and resolver signal inputs, IEEE 1588 time synchronization, and data output to CAN/CAN-FD buses and low-latency data transmission via UDP communication. Featuring several interfaces for remote control via PC, external monitor or tablet up to five WT1500 units can be synchronized, enabling 20-channel power measurement.

AEC-Q101 compliant 40 V N-channel MOSFETs

Learn more:
toshiba.semicon-storage.com

Product Release
2026-07-21

Toshiba Electronics Europe has launched the XPJ1R504PB, an automotive-compliant 40 V, 120 A N-channel power MOSFET housed in the S-TOGL™ package, expanding its lineup for 12 V systems. Target applications include inverters, semiconductor relays, load switches, and motor drives. By adding this 40 V MOSFET to its existing lineup in the S-TOGL package, which includes the XPJR6604PB and XPJ1R004PB, Toshiba has expanded its product options to meet a range of applications and performance requirements. The S-TOGL package employs gull wing leads that help relieve mounting stress, thereby improving the mechanical reliability of the soldered connections. In addition, the package features a post less structure that integrates the chip’s source-electrode connection and outer leads, thereby reducing parasitic resistance and achieving an on resistance (R_DS(ON)) of 1.54 mΩ (max.) at a gate-source voltage (V_GS) of 10 V. The use of a thick copper frame in the S-TOGL package lowers the transient thermal impedance between the channel and the case (Z_th(ch-c)) to 0.76 K/W, reducing conduction loss and suppressing heat generation, thereby improving overall system efficiency. Furthermore, a multi-pin structure for the source leads enhances current distribution, enabling high current capability.

Strategic Acquisition increases Medium Voltage Expertise

Learn more:
tamuracorp.com

Industry News
2026-07-21

Tamura Corporation has entered into a share transfer agreement, through its subsidiary Tamura-Europe Limited, to acquire EMG Power Electric S.r.l. This strategic acquisition marks another important step in Tamura’s "One TAMURA for Next 100" Medium-Term Management Plan, strengthening the Group’s capabilities in medium-voltage power technologies and supporting growth in key markets including renewable energy, industrial electrification, AI-driven data centers and critical power infrastructure. Following the completion of the transaction, EMG will serve as the Tamura Group’s Global Center of Excellence for medium-voltage dry-type transformer technologies, supporting engineering development, manufacturing excellence and technology transfer across the Group’s worldwide operations. By combining EMG’s expertise with Tamura’s global engineering and manufacturing network across Japan, Europe, the United States, Mexico, China and Malaysia, the Group aims to strengthen its ability to deliver advanced power conversion solutions to customers worldwide.

Family of 1200-2300 V SiC Power Modules

Learn more:
ween-semi.com

Product Release
2026-07-20

WeEn Semiconductors has launched a family of AC/DC and DC/DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications. The semiconductors are available in an array of packages and with voltages ranging from 1200 to 2300 V, R_DS(on) values as low as 1.5 mΩ and customer-specific configurations can also be created. Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kV_AC to 800 V_DC in a single stage. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T). Similarly, half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing.

More News	Teaser	NewsID	NewsSection	Title	Text	Announced	AnnouncedMMM	Picture	PicturePath	WebLink	WebLinkText
1.8 V Power-Line Protection by using eFuse Ics	Toshiba announces the TCKE5 Series of electronic f...	14028	Product Release	1.8 V Power-Line Protection by using eFuse Ics	Toshiba announces the TCKE5 Series of electronic fuse ICs (eFuses), extending its power-line protection range to support 1.8V supplies in space-constrained electronic equipment. Applications include SD memory cards, USB and HDMI® devices, laptop PCs and gaming consoles. The four devices combine overcurrent and short-circuit protection in a compact package. Operating over an input voltage range of 1.7 V to 5.5 V, the TCKE5 Series supports 1.8 V, 3.3 V and 5 V supplies. An external resistor sets the overcurrent detection threshold, allowing designers to match protection to the requirements of the downstream circuit. A mask time of 2.4 ms (typ.) allows brief current peaks to pass without triggering overcurrent shutdown; if the overcurrent persists beyond this period, the IC switches off its output. A separate short-circuit protection function responds to higher fault currents. The series comprises the TCKE501UA, TCKE501UL, TCKE502UA and TCKE502UL. The UA variants provide automatic retry following a fault, while the UL variants latch off and require an external signal to restart. Designers can choose the recovery behaviour that suits their system. All four devices support a DC output current of up to 1.0 A and are housed in the SOT-353F (UFV) package, measuring 2.0 mm × 2.1 mm × 0.7 mm (typ.).	22.10.2026 09:30:00	Oct	news_2026-11-01_10.jpg	\images\news_2026-11-01_10.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/10/power-management-ics-20261022-1.html	toshiba.semicon-storage.com
SiC Power Modules for Energy and Grid Infrastructure	Navitas Semiconductor announced an ultra-high-volt...	14033	Product Release	SiC Power Modules for Energy and Grid Infrastructure	Navitas Semiconductor announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has an R<sub>DSon</sub> of 8 mΩ. It has been developed for use in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas’ fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas’ 2300 V and 3300 V ultra-high voltage SiC portfolio. These SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas’ AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications. The module family will be qualified to Navitas’ AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request.	21.10.2026 14:30:00	Oct	news_2026-11-01_15.jpg	\images\news_2026-11-01_15.jpg	https://www.navitassemi.com/en/press-releases/navitas-unveils-next-generation-ultra-high-voltage-sic-power-module-to-advance-energy-and-grid-infrastructure-efficiency	navitassemi.com
Y1 Safety Capacitors for Operations up to 500 VAC	TDK Corporation has introduced the B3201<sup>&lowa...	14031	Product Release	Y1 Safety Capacitors for Operations up to 500 VAC	TDK Corporation has introduced the B3201<sup>&lowast;</sup>A5/B5/C5 series of Y1 safety capacitors designed to suppress EMI in demanding automotive and industrial applications. The metallized polypropylene (MKP) film capacitors are rated for AC voltages of 500 V and DC voltages of up to 1500 V. Featuring a maximum operating temperature of up to +125 °C (with derating), they combine a space-saving footprint with AEC-Q200 Rev. E compliance. Typical applications include xEV power electronics, on-board chargers, EV charging infrastructure, industrial drives, power supplies, renewable energy converters, and energy storage systems. This series offers capacitance values ranging from 0.47 to 33 nF and is available with lead spacings of 15 and 22.5 mm. The smaller B32012 variants measure 5.0 × 10.5 × 18.0 mm³, and the B32013 types extend the capacitance range to 33 nF. Parallel wire leads support conventional through-hole mounting. The components are available untaped or in ammo-pack and reel configurations. The capacitors are rated for continuous operation at 500 VAC and 1500 VDC, respectively, at temperatures of up to +110 °C. At operating temperatures above +110 °C and up to the maximum of +125 °C, the operating voltage must be derated by 1.5% per degree Celsius. Operation within this elevated temperature range is limited to a maximum of 1000 hours. The series is approved according to IEC/EN/UL 60384-14, CSA E60384-14, and GB/T 6346.14.	21.10.2026 12:30:00	Oct	news_2026-11-01_13.png	\images\news_2026-11-01_13.png	https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-compact-y1-safety-capacitors-for-operations-up-to-500-v-ac-and-125-c/3709684	tdk-electronics.tdk.com
100 W USB-C PD Medical Desktop Power Supplies	Bel Fuse announced the SDM100G series, a family of...	14034	Product Release	100 W USB-C PD Medical Desktop Power Supplies	Bel Fuse announced the SDM100G series, a family of 100 W medical desktop power supplies that combines USB-C Power Delivery (PD) with gallium nitride (GaN) technology. As Bel’s first USB Type-C medical power supply line, the series gives medical equipment designers a globally compatible option for powering and charging devices across multiple voltage requirements. The SDM100G series supports five USB-C PD output levels (5 V, 9 V, 12 V, 15 V, and 20 V) enabling a single power platform to support a broad range of devices. C8 and C14 AC inlet options address different regional electrical standards and equipment requirements, while the USB-C interface provides a widely adopted charging standard that can help customers simplify accessories and reduce electronic waste. Built for medical environments, the series carries a Means of Patient Protection (MOPP) safety classification to support protection against electric shock. Integrated overcurrent and short-circuit protection help protect connected equipment and reduce the risk of system failure. The series is certified to IEC/UL 60601-1 and supports global regulatory and EMC requirements, including UL, cUL, UKCA, CE, and FCC. The SDM100G Series is designed for portable medical devices, remote patient-monitoring equipment, mobile medical workstations, and wearable medical devices. It also supports industrial and consumer or IoT applications that benefit from compact, high-efficiency USB-C power delivery.	20.10.2026 15:30:00	Oct	news_2026-11-01_16.jpg	\images\news_2026-11-01_16.jpg	https://www.belfuse.com/resources/news/bel-fuse-introduces-sdm100g-100-w-usb-c-pd-medical-desktop-power-supplies	belfuse.com
APEC 2027 Early Bird Registration Now Open	Registration is now open for the 42nd Annual Appli...	14024	Event News	APEC 2027 Early Bird Registration Now Open	Registration is now open for the 42nd Annual Applied Power Electronics Conference. The APEC 2027 conference and exposition, running March 7-11, 2027 at the Ernest N. Morial Convention Center in New Orleans/Louisiana (USA) continues its long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. APEC 2027 Conference registration includes access to technical content, such as peer-reviewed Technical Program paper presentations, Industry Sessions discussing the latest advances in commercial developments, as well as half-day Professional Education Seminars presented by industry experts on a range of topics geared to both introductory and expert-level participants. In addition to the conference program, full registration includes admission to the sold-out APEC 2027 Exposition that brings together nearly 300 manufacturers. Special events – including the MicroMouse contest and the always-popular Wednesday evening Social Event – round out the interactive tradeshow environment. APEC focuses on the practical and applied aspects of the power electronics business.	20.10.2026 11:00:00	Oct	news_2026-11-01_6.jpg	\images\news_2026-11-01_6.jpg	https://apec-conf.org/attendees/registration/	apec-conf.org
Sales Rep as well as Authorized Distributor added in the UK	Recom has increased its sales and distribution net...	14020	Industry News	Sales Rep as well as Authorized Distributor added in the UK	Recom has increased its sales and distribution network in the UK by adding BCD Atlantik as a sales representative and Ecopac as an authorized distributor in the United Kingdom. The partnership with BCD Atlantik combines RECOM’s DC/DC and AC/DC power supplies with BCD Atlantik’s engineering capabilities and customer-focused approach. This company supports engineers throughout the entire product development cycle by providing technical consulting, design-in support, and engineering services. For more than three decades, Ecopac Power, which is now an official RECOM distributor in the UK, has supported design engineers and industrial customers with the selection and integration of power supply solutions. The partnership provides a local source for the RECOM portfolio in the UK.	20.10.2026 07:00:00	Oct	news_2026-11-01_2.jpg	\images\news_2026-11-01_2.jpg	https://recom-power.com/en/company/newsroom/rec-n-bcd-atlantik-joins-recom%27s-uk-sales-representative-network-489.html?3	recom-power.com
4 kW Buck-Boost Converter Reference Design	Efficient Power Conversion (EPC) announced the use...	14025	Product Release	4 kW Buck-Boost Converter Reference Design	Efficient Power Conversion (EPC) announced the use of its EPC2361 100 V eGaN FETs in a high-performance buck-boost converter reference design from Analog Devices (ADI). The design demonstrates how GaN technology can enable efficient, high-current power conversion for demanding industrial, telecom, battery charging, and other high-power applications. The EVAL-LT7930-AZ combines the LT7930 controller with EPC2361 GaN FETs in a dual-phase, interleaved buck-boost converter operating from 36 V to 65 V input and delivering 48 V output. The platform supports up to 4 kW of output power and achieves typical efficiencies of 98.5% at 36 V and 48 V input and 98.8 % at 65 V, demonstrating the high-efficiency power conversion enabled by EPC’s GaN technology. The EPC2361 is a 100 V, 133 A enhancement-mode GaN transistor featuring a typical 0.75 mΩ on-resistance and a 3 mm × 5 mm package. A key element of the reference design is the ability to optimize the switching behavior specifically for GaN. The power-stage controller provides gate drivers optimized for GaN FETs and programmable dead-time control. On the evaluation platform, the dead time is set to 10 ns based on the EPC2361 GaN FET parameters, helping minimize reverse-conduction losses while maintaining safe switching operation.	20.10.2026 06:30:00	Oct	news_2026-11-01_7.jpg	\images\news_2026-11-01_7.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3380/epc-gan-fets-enable-4-kw-high-efficiency-buck-boost-converter-reference-design	epc-co.com
Swiss-Japanese Power Joint Venture	ABB announced the creation of a joint venture with...	14019	Industry News	Swiss-Japanese Power Joint Venture	ABB announced the creation of a joint venture with Mitsubishi Electric’s carved-out low-voltage power distribution product business, forming a new company focused on low-voltage solutions for Asian markets. For a consideration of JPY 79 billion (~$495 million), ABB will acquire a controlling 51 percent stake in the newly carved out company as well as full ownership of the related sales operations outside of Japan of Mitsubishi Electric’s low-voltage power distribution products. The transaction, which provides an option for full ownership by ABB in the mid-term, is expected to close in the second half of 2027, subject to regulatory approvals and other customary closing conditions. The new company brings together ABB’s technology and global sales network with Mitsubishi Electric’s established market presence. Mitsubishi Electric’s power distribution business employs around 2,800 people, with dedicated manufacturing facilities in Fukuyama, Japan, and Hanoi, Vietnam. Its portfolio includes low-voltage circuit breakers, switches, motor starters, contactors and control devices, energy measurement and monitoring equipment, and uninterruptible power supply systems.	20.10.2026 06:00:00	Oct	news_2026-11-01_1.jpg	\images\news_2026-11-01_1.jpg	https://www.abb.com/global/en/news/139701/abb-joint-venture-with-mitsubishi-electric-to-expand-position-in-asia-pacific-markets	abb.com
Family of Heat Shock Chip Resistors	KOA Speer Electronics has developed a family of he...	14029	Product Release	Family of Heat Shock Chip Resistors	KOA Speer Electronics has developed a family of heat shock resistors capable of withstanding two to three times the number of thermal cycles compared to standard chip resistors. These resistors feature a metal glaze resistance film that features a thicker bottom electrode to suppress cracking and delamination caused by thermal shock. This enhanced solder joint reliability applies to both high-strength solders and SAC (Sn-Ag-Cu) solders. KOA’s family of heat shock resistors use a part number designation of -AT and include general purpose, high precision, high voltage, anti-surge and high temperature resistors. The new resistors have applications in the automotive and industrial markets as well as power supplies. KOA tested these heat shock resistors and standard resistors in 30 minute cycles from -55 °C to +155 °C for 3,000 cycles.	16.10.2026 10:30:00	Oct	news_2026-11-01_11.png	\images\news_2026-11-01_11.png	https://www.koaspeer.com/	koaspeer.com
Single-Output AC/DC Power Supplies	Vox Power has expanded its EIRE family of single-o...	14032	Product Release	Single-Output AC/DC Power Supplies	Vox Power has expanded its EIRE family of single-output AC/DC power supplies with the introduction of the EIRE600, a 600 W power supply measuring 5 inches × 3 inches with a 1.1-inch profile. The unit delivers its full 600 W output with either forced-air or conduction cooling. Where fan-less operation is preferred, it can provide up to 450 W using natural convection at 115 V<sub>AC</sub>. For applications with short-duration higher power requirements, up to 750 W is available for three seconds. System airflow can be used where it is already available, while conduction cooling allows heat to be transferred directly into the equipment chassis or a cooling plate. Natural-convection operation is also available for applications where acoustic noise, maintenance or ingress protection are important considerations. With its efficiency of up to 96 %, the power supply is designed for both industrial and medical applications. It provides 2 MOPP isolation, BF-rated output and support for both Class I and Class II installations. The platform operates from a universal 85–264 V<sub>AC</sub> input and is designed for operation at altitudes up to 5,000 m and ambient temperatures up to +85 °C with appropriate derating. Four standard output voltages of 12 V, 24 V, 36 V and 48 V are available. A 5 V/2 A bias supply and 12 V auxiliary fan output are provided, together with remote sense, AC_OK and inhibit functions for system control and monitoring. With the main output inhibited, standby power consumption is approximately 200 mW.	15.10.2026 13:30:00	Oct	news_2026-11-01_14.jpg	\images\news_2026-11-01_14.jpg	https://www.vox-power.com/2026/10/14/eire600-power-series-600w-single-output-5-x-3-x-1-1-ac-dc/	vox-power.com
SiC MOSFET Power Module with Integrated Half-Bridge Structure	The MD53HFL120L2S_B20 from StarPower Semiconductor...	14030	Product Release	SiC MOSFET Power Module with Integrated Half-Bridge Structure	The MD53HFL120L2S_B20 from StarPower Semiconductor is a SiC MOSFET power module designed for demanding high-voltage applications (1200 V class, 120 A class) in the industrial and automotive sectors. With its reverse voltage of 1200 V, an R<sub>DS(on)</sub> of 5.3 mΩ at 25 °C, a free-wheeling diode and the use of AlN-AMB technology, the module is suited for the development of DC/DC converters and auxiliary drives. The half-bridge topology, consisting of two SiC MOSFETs (dual N-channel) connected in series, can be used for inverter and converter stages. The devices can operate at temperatures of up to 150 °C. Typical applications are main and auxiliary drives in electric vehicles, as well as on-board chargers, central and string inverters for solar installations, UPS systems and SMPS, as well as DC servo systems and robot drives.	15.10.2026 11:30:00	Oct	news_2026-11-01_12.jpg	\images\news_2026-11-01_12.jpg	https://starpowereurope.com/products?category=sic-mosfet-module	starpowereurope.com
Supply Agreement for 200-Millimeter SiC Wafers	Infineon Technologies and Wolfspeed have signed a ...	14022	Industry News	Supply Agreement for 200-Millimeter SiC Wafers	Infineon Technologies and Wolfspeed have signed a multi-year supply agreement for 200-millimeter silicon carbide wafers, transitioning Infineon’s already existing Wolfspeed supply relationship from 150-millimeter to 200-millimeter substrate technology. The agreement directly supports Infineon’s conversion to 200-millimeter SiC manufacturing. The transition to 200-millimeter SiC wafers delivers large manufacturing economics compared to 150-millimeter production. Larger wafer diameter increases usable die area per wafer, reduces per-unit substrate cost, and improves overall manufacturing efficiency. Infineon operates a multi-source SiC substrate strategy to maintain supply chain flexibility and quality across its global manufacturing network, including its 200-millimeter SiC fab in Kulim, Malaysia.	15.10.2026 09:00:00	Oct	news_2026-11-01_4.png	\images\news_2026-11-01_4.png	https://www.infineon.com/press-release/2026/infpr202610-008	infineon.com
Semiconductor Distribution Agreement for Power MOSFETs in Japan	iDEAL Semiconductor announced a distribution agree...	14021	Industry News	Semiconductor Distribution Agreement for Power MOSFETs in Japan	iDEAL Semiconductor announced a distribution agreement with the value-added technology distributor Marubun Corporation. Under the agreement, Marubun will distribute iDEAL’s expanding portfolio of high-performance silicon MOSFETs. The manufacturer’s MOSFETs address efficiency, thermal performance, and power density challenges in industrial automation and robotics, battery management systems, industrial power supplies, isolated DC/DC converters, data center power supplies, and other high-performance power conversion systems.	15.10.2026 08:00:00	Oct	news_2026-11-01_3.png	\images\news_2026-11-01_3.png	https://idealsemi.com/ideal-semiconductor-signs-distribution-agreement-with-marubun-to-expand-access-to-superq-power-mosfets-in-japan/	idealsemi.com
Expanding Distribution Capabilities for Shipping worldwide	DigiKey will invest $100 million over the next 18 ...	14023	Industry News	Expanding Distribution Capabilities for Shipping worldwide	DigiKey will invest $100 million over the next 18 months to expand both its global product distribution center in Thief River Falls, Minnesota/USA, and its order management system. The investment funds the next phases of DigiKey’s product distribution center (PDC) expansion, adding high-volume picking capacity and advanced automated packing operations. The first new automated packing system is already on site and will be in use this year, with additional multi-line packing automation phased in as part of the investment program. The announcement follows a year of extraordinary growth for the company. DigiKey is on pace to grow more than 50 percent in 2026, and projects continued double-digit growth in the year ahead. The expansion continues the design philosophy behind the company’s purpose-built product distribution center: building in capacity ahead of demand. DigiKey’s 2.2 million-square-foot product distribution center expansion project opened in August 2022 and was designed for scalable growth, with many open spaces and much of the fourth floor left empty for future expansion. The additional picking bays, order retrieval automation and expanded packing operations will process a growing share of order volume across multiple product form factors with higher speed and efficiency. Currently, the company has more than 1.9 million products in stock and ready to ship the same day from the product distribution center.	14.10.2026 10:00:00	Oct	news_2026-11-01_5.jpg	\images\news_2026-11-01_5.jpg	https://www.digikey.com/en/news/press-releases/2026/october/digikey-commits-100-million-investment-over-next-18-months-to-expand-global-distribution-operations	digikey.com
Radiation-Tolerant GaN Point-of-Load Converter	Microchip Technology announces the POL-05-20S-T, a...	14027	Product Release	Radiation-Tolerant GaN Point-of-Load Converter	Microchip Technology announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the power requirements of space processing applications. This device uses GaN power devices to deliver up to 20 A of output current. The converter is supplied in a 25 g surface-mount package measuring 1.51" × 1.51" × 0.45". By delivering 20 A in this footprint, the device helps engineers manage the size, power and energy constraints that accompany increasingly capable onboard processing systems. The POL-05-20S-T is designed for high-current, fast-transient applications such as for the core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. It combines a synchronous buck topology with current-mode control. With an input range of 4.75 V to 13.2 V and adjustable 0.7 V to 5 V output, the device fits to multiple power rails and system architectures. The POL-05-20S-T has electrical parameters specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad. The device is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg. It operates from -55 °C to +100 °C at full load. It incorporates remote sensing, undervoltage and overvoltage protection, soft start, an enable pin and power-good indication pin.	14.10.2026 08:30:00	Oct	news_2026-11-01_9.jpg	\images\news_2026-11-01_9.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-expands-space-power-portfolio-with-new-radiation-tolerant-gan-pol-converter	microchip.com
27 kW three-phase PSU solution for Next-Generation AI Server Power Architectures	To address the shift toward 800 VDC or ±400...	14010	Product Release	27 kW three-phase PSU solution for Next-Generation AI Server Power Architectures	To address the shift toward 800 VDC or ±400 VDC power supply architectures, Infineon has launched a 27 kW three-phase power supply unit (PSU) solution for server ODMs and OEMs. The reference design meets the requirements of the OCP Open Rack V3 (ORV3) specification and AI server rack architectures. The solution helps developers shorten time-to-market while improving rack power density, efficiency, and thermal performance. The design combines Infineon components including 650 V CoolSiC™ and CoolMOS™ MOSFETs, EiceDRIVER™ gate drivers, XENSIV™ current sensors, and PSOC™ microcontrollers. It achieves a peak efficiency of more than 98 % at an input voltage of 480 VAC and 50 % load. The reference design uses a five-level ANPC PFC topology and a three-level LLC converter, reaching a power density of 116 W/in<sup>3</sup>, compared with the ORV3 minimum requirement of 94 W/in<sup>3</sup>. An integrated energy buffer provides a hold-up time of 20 ms during short power grid disturbances. It also helps smooth the line voltage during rapid GPU load changes, eliminating the need for a separate capacitor bank unit (CBU). An integrated planar magnetic structure enables a modular, and scalable high-frequency transformer design. The reference design supports a three-phase input voltage range of 311 to 528 VAC and is therefore suitable for a range of global grid standards. It achieves low input-current total harmonic distortion (iTHD) and a power factor above 0.99 across most of the load operating range. The design supports operation at ambient temperatures from -5 °C to +45 °C.	08.10.2026 07:30:00	Oct	news_2026-10-15_10.jpg	\images\news_2026-10-15_10.jpg	https://www.infineon.com/technology-news/2026/inftn202610-005	infineon.com
3 kW AC/DC Power Supply meets Medical Requirements	With the RACM3000-M series, RECOM provides high-po...	14016	Product Release	3 kW AC/DC Power Supply meets Medical Requirements	With the RACM3000-M series, RECOM provides high-power AC/DC power supplies for medical, industrial, and energy applications. Communication functions, support for parallel operation, and safety approvals enable straightforward integration into a wide range of systems. The RACM3000-M delivers up to 3000 W of output power and operates over an input voltage range of 90 – 264 V<sub>AC</sub>, with full power available from 180 – 264 V<sub>AC</sub>. In addition, variants of the RDC3000-M series are planned for 400 – 800 V<sub>DC</sub> input, extending the range of possible applications in modern energy and infrastructure systems. The products feature an integrated CAN bus interface for monitoring and control, a 5 V / 2 A standby output, Remote On/Off, Remote Sense, and a DC-OK signal. For applications with increasing power requirements, active load sharing and optional integrated OR-ing FETs support safe parallel operation of multiple power supplies. A temperature-controlled intelligent fan provides reliable cooling. The series meets the requirements of UL/IEC 60601 for medical applications, UL/IEC 62368 for industrial and ICT equipment, and IEC 60335-2-29 for charging applications. With 2MOPP isolation, it is suitable for both medical devices and industrial systems with stringent safety and reliability requirements. Typical applications for the RACM3000-M series include battery charging systems, cobots, automated medical analysis and diagnostic systems, machine control, communication infrastructure, energy storage, and data centers.	07.10.2026 13:30:00	Oct	news_2026-10-15_16.jpg	\images\news_2026-10-15_16.jpg	https://recom-power.com/en/knowledgebase/newsroom/rec-n-high-power-racm3000-m-series-with-up-to-3000w-output-power-484.html?4	recom-power.com
60 V Dual Power MOSFETs for Automotive	Taiwan Semiconductor introduces a family of automo...	14015	Product Release	60 V Dual Power MOSFETs for Automotive	Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its existing TQM Series. Available in a PDFN56UD, these twelve 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm x 6 mm packaging with heat-spreader contacts, a drain current (I<sub>D</sub>) of 81 or, respectively, 100 A, and an R<sub>DS(ON)</sub> between 2.6 and 5.2 m&ohm; provide adequate thermal management and power density. Additionally, their wettable flank connections are suited for automated placement. Typical applications include H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives.	07.10.2026 12:30:00	Oct	news_2026-10-15_15.png	\images\news_2026-10-15_15.png	https://www.taiwansemi.com/en/perfet-60v-power-mosfets-for-automotive/	taiwansemi.com
$1.5 Billion Loan Commitment for SiC Manufacturer	Wolfspeed announced it has received a conditional ...	14007	Industry News	$1.5 Billion Loan Commitment for SiC Manufacturer	Wolfspeed announced it has received a conditional loan commitment letter from the U.S. Department of War (“DoW”), through its Office of Strategic Capital (“OSC”), for up to $1.5 billion of long-term financing to support the domestic development and production of silicon carbide materials and wide bandgap power devices, with an additional focus on U.S. national security applications. Beyond supporting the domestic wide bandgap supply chain, which is critical to the U.S. defense and economic industrial base, the $1.5 billion commitment will support key DoW initiatives. Specifically, Wolfspeed plans to use the financing to, without limitation, upgrade its gallium nitride (GaN) epitaxy capabilities for next generation communications infrastructure and electronic warfare systems and develop radiation-hardening capabilities for its current SiC and future GaN products. Wolfspeed believes that SiC and related semiconductor technologies are critical to next generation power and radio-frequency applications across defense, aerospace, AI, critical infrastructure and other strategic commercial markets. The execution of the definitive agreements and consummation of the potential financing are subject to substantial due diligence and numerous conditions, the negotiation and finalization of agreements, significant closing conditions, governmental authorizations and approvals, appropriations and required third-party consents.	07.10.2026 12:00:00	Oct	news_2026-10-15_7.jpg	\images\news_2026-10-15_7.jpg	https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-conditional-30-year-loan-commitment-from-us-department-of-war-to-advance-domestic-wide-bandgap-supply-chain/	wolfspeed.com
Cooperation on advanced Packaging Industrial Adoption	The Global Electronics Association has signed a Me...	14004	Industry News	Cooperation on advanced Packaging Industrial Adoption	The Global Electronics Association has signed a Memorandum of Understanding (MoU) with the Fraunhofer Group for Microelectronics to help accelerate the path from advanced packaging innovation to industry-scale manufacturing. The collaboration focuses on the APECS pilot line, the European pilot line for advanced packaging and heterogeneous integration for electronics components and systems under the EU Chips Act. APECS is coordinated by the Fraunhofer-Gesellschaft and implemented by Research Fab Microelectronics Germany (FMD), a research collaboration of 13 Fraunhofer institutes and the Leibniz institutes FBH and IHP. The MoU draws on APECS pilot line capabilities and the Global Electronics Association’s expertise in standards, industry engagement and knowledge transfer to support the transition of new technologies toward industrial implementation. APECS provides access to capabilities for advanced packaging and heterogeneous integration, including chiplet-based modules and 2.5D/3D integration. The pilot line also emphasizes System-Technology Co-Optimization (STCO) – an approach that helps align product design, materials, assembly integration choices and manufacturing processes earlier in development. At a kick-off meeting in September, representatives from the Global Electronic Association and the Fraunhofer Group for Microelectronics launched the collaboration and discussed its priorities with a focus on supporting industry adoption of advanced packaging and heterogeneous integration technologies. The goal is to turn validated pilot line capabilities into industry-ready approaches that can be adopted at scale.	07.10.2026 09:00:00	Oct	news_2026-10-15_4.png	\images\news_2026-10-15_4.png	https://www.electronics.org/technology-solutions	electronics.org
3300 V SiC MOSFET Module for Industrial Equipment	Toshiba Electronics Europe launched IX800FXF2YMS4,...	14014	Product Release	3300 V SiC MOSFET Module for Industrial Equipment	Toshiba Electronics Europe launched IX800FXF2YMS4, a dual SiC MOSFET modulewith high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. The IX800FXF2YMS4 uses Toshiba’s third-generation SiC MOSFET devices and has a drain-source voltage (V<sub>DSS</sub>) rating of 3300 V with a drain current (DC) rating of 800 A. The IX800FXF2YMS4 has an I<sup>2</sup>t rating of 30 0kA<sup>2</sup>s for its diode at initial channel temperature of 175 °C, V<sub>GS</sub> = -6 V, a single half-sinewave 10 ms pulse, and F.R. = 1 %. This indicates the diode’s surge current capability under abnormal operating conditions. Typical drain-source on-voltage (sense) (V<sub>DS(on)sense</sub>) is 1.4 V at I<sub>D</sub> = 800 A, V<sub>GS</sub> = +20 V and T<sub>ch</sub> = 25 °C. Typical turn-on and turn-off switching losses (E<sub>on</sub> and E<sub>off</sub>) are 185 mJ and 175 mJ, respectively, at V<sub>DD</sub> = 1800 V, I<sub>D</sub> = 800 A and T<sub>ch</sub> = 175 °C. The device is housed in the iXPLV™ (Intelligent Flexible Package Low Voltage) package, which uses silver sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175 °C.	06.10.2026 11:30:00	Oct	news_2026-10-15_14.jpg	\images\news_2026-10-15_14.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/10/sic-power-devices-20260924-1.html	toshiba.semicon-storage.com
TVS Diode Arrays for ESD Protection	Littelfuse announced AQ4315-01ETG and SP4315-01WTG...	14012	Product Release	TVS Diode Arrays for ESD Protection	Littelfuse announced AQ4315-01ETG and SP4315-01WTG, two bidirectional TVS Diode Arrays (SPA® Diodes) that combine low clamping voltage with low capacitance to protect today’s fastest automotive and consumer data interfaces from electrostatic discharge (ESD) without compromising signal integrity. High-speed interfaces such as automotive ADAS, DisplayPort, and USB4 are increasingly vulnerable to ESD damage as data-line voltages drop below 1 V to save energy and reduce EMI. Conventional TVS diodes force a tradeoff between low clamping voltage and low capacitance, and many competing devices advertise a lower breakdown voltage while still clamping at levels that leave protected chips exposed to damage. The AQ4315-01ETG and SP4315-01WTG close that gap, holding clamping voltage to a typical 4.5 V to 6.5 V while suppressing ESD transients ranging from 8 kV to 20 kV down to well under 10 V at the protected device, an 800- to 2,000-times reduction in the voltage and current reaching the IC and keeping it safely within its Safe Operating Area (SOA). The capacitances of the devices are 0.25 pF (AQ4315-01ETG) or 0.17 pF (SP4315-01WTG) to preserve high-speed signal integrity. AQ4315-01ETG provides automotive-grade reliability is AEC-Q101 qualified and PPAP capable, rated -40 °C to +150 °C.	06.10.2026 09:30:00	Oct	news_2026-10-15_12.jpg	\images\news_2026-10-15_12.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-unveils-ultra-low-capacitance-tvs-diode-arrays-with-industrys-lowest-clamping-voltage	littelfuse.com
Collaboration on 800 V Reference Design for Next-Generation AI Data Centers	The industry is shifting toward 800V DC rack power...	14006	Industry News	Collaboration on 800 V Reference Design for Next-Generation AI Data Centers	The industry is shifting toward 800V DC rack power architectures to improve distribution efficiency, increase power density and support next-generation server designs. To help accelerate this transition, Navitas and Microchip have collaborated on an 800 V DC-to-6V DC reference design for AI data center rack power applications. The platform combines Microchip’s digital power control and security technologies with Navitas’ GaNFast™ gallium nitride (GaN) power devices to give developers a practical path to implement high-efficiency power conversion aligned with the Open Compute Project (OCP) 800 V DC standard. Complete with reference hardware, software and design documentation, the solution helps reduce design risk, shorten development cycles and accelerate deployment of next-generation AI infrastructure. At the core of the reference platform are Microchip's dsPIC33AK Digital Signal Controllers (DSCs), TA100 CryptoAuthentication™ device, and Navitas’ GaNFast FETs. The dsPIC33AK is designed to provide high-resolution control, high-speed analog and security with support for post-quantum cryptography. Powered by a 200 MHz 32-bit core with a double-precision floating-point unit (FPU), the dsPIC33AK256MPS306 family combines 78 ps high-resolution Pulse Width Modulators (PWMs) and multiple 12-bit Analog-to-Digital Converters (ADCs) operating at up to 40 MSPS for high frequency, high-efficiency DC/DC power conversion. This PDB is powered by 16 × NV6034, 650 V, 17 m&ohm; GaNFast FETs in a stacked half-bridge topology on the primary side. The DFN8×8 dual-side-cooled package reduces thermal resistance. The PDB targets delivering up to 96 % peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in<sup>3</sup>.	05.10.2026 11:00:00	Oct	news_2026-10-15_6.jpg	\images\news_2026-10-15_6.jpg	https://www.navitassemi.com/en/press-releases/navitas-and-microchip-collaborate-to-deliver-800v-reference-design-for-next-generation-ai-data-centers	navitassemi.com
Investment in Scottish Battery Storage Project	Copenhagen Infrastructure Partners (CIP) has taken...	14003	Industry News	Investment in Scottish Battery Storage Project	Copenhagen Infrastructure Partners (CIP) has taken Financial Investment Decision (FID) for Kilmarnock South, a 350 MW / 1,400 MWh lithium-ion battery energy storage system (BESS) located in south Ayrshire, southern Scotland. Construction is now underway with commercial operations expected in the first quarter of 2028. The battery will store surplus Scottish wind power that would otherwise go unused and release it to the grid when the network has capacity. Kilmarnock South is CIP's fourth investment in transmission-connected BESS projects in Scotland. Upon full commissioning, CIP’s four Scottish BESS projects will collectively offer a total energy storage capacity of 4.4 GWh, the equivalent of almost a third of Great Britain’s operational battery energy storage today and about the electricity demand of over 5.5 million households, across a two-hour period.	02.10.2026 08:00:00	Oct	news_2026-10-15_3.jpg	\images\news_2026-10-15_3.jpg	https://www.cip.com/copenhagen-infrastructure-partners-p-s/r/copenhagen-infrastructure-partners-announces-eur-270-million-investment-in-new-scottish-battery-stor,c4388796?nfiid=3297	cip.com
650 V GaN in Dual-Side Cooled Package for Megawatt-Scale AI Data Centers	Renesas launched a 650V GaN device with dual-side ...	14013	Product Release	650 V GaN in Dual-Side Cooled Package for Megawatt-Scale AI Data Centers	Renesas launched a 650V GaN device with dual-side cooling for high-density power conversion in 800 V high-voltage DC (HVDC) AI data center architectures. The TP65H020G4PLSGBD D-Mode device delivers 20 m&ohm; on-resistance in a dual-side-cooled (DSC) PQFN package. Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centers supporting up to 700 V operation. It targets the 800 V DC/DC intermediate bus converter (IBC) stage that steps down to 48 V, 12 V or 6 V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack. As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, this device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10 %. Its 8 × 8 mm<sup>2</sup> PQFN footprint is also 57 % smaller than the existing 10 × 15 mm<sup>2</sup> TOLT package.	30.09.2026 10:30:00	Sep	news_2026-10-15_13.jpg	\images\news_2026-10-15_13.jpg	https://www.renesas.com/en/about/newsroom/renesas-unveils-industrys-first-650v-gan-dual-side-cooled-8x8mm-package-megawatt-scale-ai-data	renesas.com
Aluminum-Housed Wirewound Resistors for High-Power Industrial Equipment	Bourns announced the UALH Series Aluminum Housed H...	14018	Product Release	Aluminum-Housed Wirewound Resistors for High-Power Industrial Equipment	Bourns announced the UALH Series Aluminum Housed High Power Wirewound Resistors industrial equipment operating under demanding electrical and thermal conditions. The fixed resistors provide a 100 W power rating when mounted to a heatsink and a 30 W power rating without a heatsink, with a resistance range of 0.5 &ohm; to 22 k&ohm; with ±5 % tolerance and a temperature coefficient of resistance of ±350 ppm/°C. Industrial motor controls, power supplies and high-power machinery can subject resistive components to elevated temperatures and electrical stress. These conditions require designers to account for power dissipation, working voltage and available mounting space when selecting a fixed resistor. The UALH Series combines wirewound construction protected by a silicone molding compound with an aluminum housing that transfers heat from the resistor when mounted to a heatsink. Its thin, lightweight body operates across a temperature range of -55 °C to +275 °C. The maximum working voltage is 1483 V, while the dielectric withstanding voltage is 4500 V. Target Applications are industrial motor controls, industrial power supplies and high-power machinery.	29.09.2026 15:30:00	Sep	news_2026-10-15_18.jpg	\images\news_2026-10-15_18.jpg	https://www.bourns.com/news/press-releases/pr/2026/09/29/bourns-introduces-ualh-series-aluminum-housed-wirewound-resistors-for-high-power-industrial-equipment	bourns.com
Silicon Carbide Technology for Solid-State Transformers in 800 VDC AI Data Center Power Architectures	Infineon Technologies will deliver silicon carbide...	14005	Industry News	Silicon Carbide Technology for Solid-State Transformers in 800 VDC AI Data Center Power Architectures	Infineon Technologies will deliver silicon carbide (SiC) power devices to Eaton, an intelligent power management company, for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across APAC. It targets 800 VDC data center power distribution architectures. Designed for high-density computing infrastructures and emerging 800 VDC AI data center power distribution architectures, Eaton’s MVSST 2.0 platform reduces conversion stages compared with conventional architectures, improving efficiency, power density and deployment flexibility. It is one of the first medium-voltage solid-state transformer platforms. Looking ahead, Eaton and Infineon are exploring next-generation SST platforms based on 2.3 kV and 3.3 kV SiC power modules to support higher system voltages, greater efficiency and enhanced reliability for future AI data centers, grid modernization and renewable energy applications.	29.09.2026 10:00:00	Sep	news_2026-10-15_5.png	\images\news_2026-10-15_5.png	https://www.infineon.com/press-release/2026/infpr202609-146	infineon.com
Climbing up the Ladder of Responsibilities	TTI promoted Marc Winfield to President of TTI IP&...	14002	People	Climbing up the Ladder of Responsibilities	TTI promoted Marc Winfield to President of TTI IP&E – Europe. Marc Winfield succeeded Glyn Dennehy and assumes responsibility for TTI’s European business, with a focus on continued growth and strengthening relationships with its customers and strategic supplier partners. He has been with TTI for 25 years and has held senior positions across its European commercial organisation, including Director of European Strategic Accounts and Regional Vice President roles covering Northern and Southern Europe. For more than eight years, he has overseen the European Sales organisation and was appointed Senior Vice President Sales in 2023. In his role as President of TTI IP&E – Europe, Marc Winfield reports directly to John Drabik, President of TTI IP&E – Global. Glyn Dennehy, who has been President of TTI’s European business since 2015, is moving into the role of Executive Advisor to Mike Morton, Chief Executive Officer of TTI, and John Drabik, President of TTI IP&E – Global. He will remain actively involved with the business throughout 2027, supporting the management transition and selected strategic initiatives.	28.09.2026 07:00:00	Sep	news_2026-10-15_2.jpg	\images\news_2026-10-15_2.jpg	https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2026/september/pr-09282026-marc-winfield-promoted-president-tti-europe.html	ttieurope.com
Infrastructure-compatible Reference Designs for Next-generation AI Data Centers	Mitsubishi Electric Corporation’s U.S. subsidiary ...	14011	Product Release	Infrastructure-compatible Reference Designs for Next-generation AI Data Centers	Mitsubishi Electric Corporation’s U.S. subsidiary Mitsubishi Electric Power Products released Chip-to-Grid DSX Reference Designs to support the adoption of NVIDIA’s Vera Rubin NVL72 and future next-generation NVIDIA AI infrastructure in U.S. data centers. Going forward, Mitsubishi Electric will use the reference designs to develop solutions for next-generation AI data centers. The company’s Chip-to-Grid DSX Reference Designs encompass and coordinate systems from grid connection to chip power supply, and direct-rack to facility-level cooling. This solution integrates Mitsubishi Electric’s power transmission and distribution equipment with next-generation power supply that incorporates cutting-edge technologies as well as cooling systems. The designs also offer reliable scalability to support future gigawatt-class data centers. The designs support both conventional 415/480 VAC and 800 VDC power distribution within the data center. Furthermore, by combining with a dual-loop cooling system suitable for high-density AI loads, the solution maximizes power efficiency.	24.09.2026 08:30:00	Sep	news_2026-10-15_11.jpg	\images\news_2026-10-15_11.jpg	https://www.mitsubishielectric.com/en/pr/2026/0924_pu/	mitsubishielectric.com
Ultra-Ruggedized 160 W AC/DC Power Supply for Extreme Environments	Advanced Energy Industries launches the ruggedized...	14026	Product Release	Ultra-Ruggedized 160 W AC/DC Power Supply for Extreme Environments	Advanced Energy Industries launches the ruggedized DF150 160 W AC/DC power supply. This is the first offering in the company’s Defiant Future (DF) series of robust, high-reliability standard power supplies for extreme-environment applications across the defense, industrial, telecommunications, transportation and energy sectors. Backed by rigorous validation testing, the DF150 power supply features a broad spectrum of MIL-STD certifications, combining proven performance with the shorter lead times of a standard power supply. It is certified to MIL-STD 810H, withstanding harsh conditions including shock, vibration, altitude variations and thermal extremes. DF150 also provides enhanced electromagnetic compatibility (EMC) performance with certification to MIL-STD 461G. The unit delivers a nominal 27 VDC at 6 A (160 W) with no performance degradation across its extended operating temperature range of -46 °C to +60 °C. With its IP67 rating, DF150 is fully submersible and exceeds MIL-STD ingress protection requirements for dust and liquids. The DF150 delivers up to 91 % efficiency at full load. It operates with no minimum load and low leakage (275 μA at 230 VAC). Its MIL-STD-461G certification includes RE102, CE102, CS101, CS114, CS115, CS116, CS118 and RS103. The DF150 is available with conduction cooling via a base plate or convection cooling with a mounted heatsink.	24.09.2026 07:30:00	Sep	news_2026-11-01_8.jpg	\images\news_2026-11-01_8.jpg	https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-launches-defiant-family/	advancedenergy.com
High-Current Common-Mode Chokes for Automotive DC Power Applications	Sumida Corporation has introduced the CNFC6D33 and...	14017	Product Release	High-Current Common-Mode Chokes for Automotive DC Power Applications	Sumida Corporation has introduced the CNFC6D33 and CNFC11D57, a series of DC common-mode chokes designed to suppress electromagnetic interference (EMI) in automotive and other demanding electronic applications. The devices are designed for DC power-line applications in automotive, industrial, and consumer electronics. The CNFC6D33 measures 7.2 × 6.2 × 3.5 mm<sup>3</sup> and supports rated currents up to 4 A, while providing common-mode impedance of up to 2,500 &ohm; typical at 100 MHz, depending on the version. DCR is as low as 15 m&ohm; maximum. The larger CNFC11D57 supports rated currents up to 16 A yet measures only 12.3 × 11.3 × 6.0 mm<sup>3</sup>. Three impedance configurations provide flexibility for different EMI-filtering requirements, with common-mode impedance ranging from 240 &ohm; to 1,000 &ohm; minimum at 100 MHz. DCR is 3 m&ohm; maximum. Both devices are designed for operation from -40 °C to +150 °C, including self-heating, supporting applications exposed to demanding electrical and thermal conditions. Potential applications include automotive HVAC systems, traction inverters, onboard chargers, automotive powertrain systems, DC power supplies, industrial and consumer electronics and other DC power systems requiring EMI suppression. The CNFC6D33 and the CNFC11D57 have provisional AEC-Q200 compliance.	23.09.2026 14:30:00	Sep	news_2026-10-15_17.jpg	\images\news_2026-10-15_17.jpg	https://products.sumida.com/ProductsInfo/ProductGuide/EMC/EMC.php?productid=102	sumida.com
Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth	Technology group Wärtsilä and Tokyo Gas Engineerin...	13990	Industry News	Power Solutions to support Japan’s accelerating AI-driven Data Centre Growth	Technology group Wärtsilä and Tokyo Gas Engineering Solutions Co (TGES) have signed a Memorandum of Understanding (MoU) to jointly evaluate power supply solutions for data centres in Japan. The Memorandum of Understanding between Wärtsilä and TGES aims to establish a framework for jointly evaluating gas- or dual-fuel engine-based power generation solutions for selected data centre opportunities currently under development by TGES in Japan. Under the MoU, the two companies will cooperate in developing initial technical concepts and establishing performance parameters and in assessing the feasibility of selected projects. Wärtsilä is a provider of on-site power to data centre projects.	17.09.2026 12:00:00	Sep	news_2026-10-01_7.png	\images\news_2026-10-01_7.png	https://www.wartsila.com/media/news/17-09-2026-wartsila-and-tges-to-evaluate-power-solutions-to-support-japan-s-accelerating-ai-driven-data-centre-growth-3791059	wartsila.com
Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation	Nexperia and Tata Electronics have started a strat...	13989	Industry News	Strategic Partnership across Semiconductor Manufacturing, Technology and Innovation	Nexperia and Tata Electronics have started a strategic partnership spanning semiconductor wafer manufacturing, assembly and test, technology collaboration, and innovation. The partnership establishes a framework for long-term cooperation across multiple stages of the semiconductor value chain and supports the growth ambitions of both companies. The partnership is structured around three areas: Front-end wafer fabrication, back-end assembly and test as well as technology and ecosystem development. As part of the front-end manufacturing collaboration, Nexperia and Tata Electronics are laying the groundwork for the production of Nexperia's MOSFET portfolio at Tata Electronics' upcoming 300mm semiconductor fab in Dholera, Gujarat. In parallel, the partnership also includes collaboration on semiconductor assembly and test of Nexperia’s discrete semiconductor products at Tata Electronics’ packaging facility in Jagiroad, Assam. The alliance reflects the companies’ shared ambition to build a long-term manufacturing partnership that enhances manufacturing flexibility, strengthens supply chain resilience, and establishes scalable production pathways to support Nexperia’s future growth. Tata Electronics is building India’s first commercial semiconductor fab in Dholera, Gujarat, and the first indigenous semiconductor assembly and test facility in Jagiroad, Assam, with a combined investment of USD 14 billion, to serve global customers across critical sectors.	17.09.2026 11:00:00	Sep	news_2026-10-01_6.png	\images\news_2026-10-01_6.png	https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-Tata-Electronics-announce-strategic-partnership-across-semiconductor-manufacturing-technology-and-innovation	nexperia.com
Dual Channel Gate Driver	Infineon Technologies introduces the EiceDRIVER&tr...	13994	Product Release	Dual Channel Gate Driver	Infineon Technologies introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver engineered for high-density silicon power designs in AI datacenter applications. Housed in a WQFN-12 package measuring 2.2 mm x 2.2 mm, the device addresses the growing demand for power conversion solutions that deliver higher server rack density without sacrificing reliability or thermal performance. The 2EDL6014AC-G2D supports dual high-side, dual low-side, and half-bridge configurations, making it suitable across the switched-capacitor and multilevel topologies increasingly adopted in next-generation AI server power architectures. The 2EDL6014AC-G2D provides two completely independent floating output gate drivers, each capable of driving a high-side MOSFET operating at up to 120 V. Full 4 A source and 6 A sink current driving capability takes care of the switching performance under demanding load conditions. Separate INA and INB input pins enable independent control of both channels, with integrated deglitch filtering for improved noise immunity in high-density PCB environments. The input stage is 3.3 V and 5 V logic compatible and can be directly connected to microcontroller ground to maximize signal integrity. Undervoltage lockout (UVLO) on both floating output supplies forces the corresponding outputs low in the event of insufficient supply voltage, supporting safe system startup. An exposed pad provides low thermal impedance, improving heat dissipation under sustained heavy loads, a characteristic directly relevant to the continuous high-utilization operating profiles of AI inference and training infrastructure. Applications include solid-state transformers and circuit breakers, power supply and battery backup units, intermediate bus converters, and second-stage DC conversion power modules.	17.09.2026 09:30:00	Sep	news_2026-10-01_11.jpg	\images\news_2026-10-01_11.jpg	https://www.infineon.com/technology-news/2026/inftn202609-139	infineon.com
Distribution Agreement with Current Sensor Company	Avnet Silica announced a distribution agreement wi...	13984	Industry News	Distribution Agreement with Current Sensor Company	Avnet Silica announced a distribution agreement with LEM. Under the agreement, Avnet Silica will offer LEM’s portfolio of PCB-mounted and module-mounted current sensors, covering currents from below 1 A up to 42 kA, voltage sensors for applications up to 6.4 kV, and Rogowski coil solutions for grid monitoring and instrumentation. As electrification raises the performance and safety demands placed on power systems, accurate current and voltage measurement is becoming increasingly important to engineers. LEM provides a range of galvanically isolated sensing technologies for high-current and high-voltage applications, supporting precise system control, fault and overload detection, and energy management. LEM’s sensing solutions are designed for applications across automotive, e-mobility and EV charging, data centres, energy, industrial automation and smart infrastructure.	17.09.2026 06:00:00	Sep	news_2026-10-01_1.jpg	\images\news_2026-10-01_1.jpg	https://my.avnet.com/wcm/connect/ca9b2830-fdbb-4fad-a1f0-5b81061f3b73/avs-lem-sensing-portfolio-2026.pdf?MOD=AJPERES&ContentCache=NONE&CACHE=NONE&CVID=q2LP-mb	avnet.com
60 V Dual Power MOSFETs	Taiwan Semiconductor introduces a family of automo...	13996	Product Release	60 V Dual Power MOSFETs	Taiwan Semiconductor introduces a family of automotive-grade power MOSFETs to its TQM Series. Available in a PDFN56UD, the 60 V dual n-channel devices support drop-in pin compatibility with other commonly used package types. The devices’ 5 mm × 6 mm packaging with heat-spreader contacts enables drain currents of 40 A and an R<sub>DS(ON)</sub> of 13 m&ohm;. Additionally, their wettable flank connections are suited for automated placement. TSC’s 60 V dual power PDFN56UD MOSFETs are suited for applications like H-bridge and half-bridge rectifiers, motor/actuator controls and solenoid drives. All are produced to meet AEC-Q standards, and documentation for the production part approval process (PPAP) can be provided.	15.09.2026 11:30:00	Sep	news_2026-10-01_13.png	\images\news_2026-10-01_13.png	https://www.taiwansemi.com/en/product-filter/?category=automotive-mosfets-21	taiwansemi.com
MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits	ROHM has developed the RS4P063BPHZG, a 100 V MOSFE...	13995	Product Release	MOSFET with wide-SOA for Automotive Safety Functions and Protection Circuits	ROHM has developed the RS4P063BPHZG, a 100 V MOSFET optimized for automotive safety functions and protection circuits. The device achieves a wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under V<sub>DS</sub> = 100 V and P<sub>W</sub> = 100 μs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 mm × 8.0 mm) and TOLG (TO-Leaded with Gullwing, 9.9 mm × 11.7 mm) packages as well.	15.09.2026 10:30:00	Sep	news_2026-10-01_12.jpg	\images\news_2026-10-01_12.jpg	https://www.rohm.com/news-detail?news-title=2026-09-15_news_mosfet&defaultGroupId=false	rohm.com
Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents”	The world’s largest public festival has become inc...	13988	Industry News	Munich Oktoberfest: Commercial Battery Storage Systems solve Power Grid Capacity Issues at “Tents”	The world’s largest public festival has become increasingly electrified since Russia’s first attack of Ukraine. However, the physical power grid infrastructure on site is reaching its limits. Munich’s municipal utility company, Stadtwerke München (SWM), could only further increase capacity at the medium-voltage level at disproportionate cost. This year SWM ensures the reliable operation of the large Pschorr-Bräurosl and Löwenbräu festival “tents” (halls) with three commercial battery storage systems supplied by the TESVOLT. A large festival tent is provided with a grid connection capacity of around 420 kW by SWM, but actual demand can surge to well over 500 kW during peak periods. At those moments, the grid connection is operating under continuous overload. The appetite for electricity at the Theresienwiese has multiplied within a short period of time. In addition to the move away from gas since the start of Russia's war of aggression against Ukraine, new and stricter municipal emissions regulations accelerate the transition to electric-powered systems. As even small food stalls are now required to comply with extensive regulations governing the use of gas, tent operators can save money by switching to fully electric kitchens, avoiding the installation of costly exhaust gas systems and monitoring equipment. At the same time, comfort levels are increasing. The patio heaters in outdoor areas alone now require up to 150 kW per tent. Particularly in cooler weather, peak loads rise significantly, as the heaters consume large amounts of electricity. This power is now supplied decentrally by the battery storage systems, reducing the strain on the tents’ grid connections.	15.09.2026 10:00:00	Sep	news_2026-10-01_5.png	\images\news_2026-10-01_5.png	https://www.tesvolt.com/en/press/munich-oktoberfest-tesvolt-commercial-battery-storage-systems-solve-power-grid-capacity-issues-at-festival-tents.html	tesvolt.com
Fully regenerative Dynamic Test System for 800 V AI Data Center Power	With the EA-ELR 21000 Tektronix introduces a dynam...	13993	Product Release	Fully regenerative Dynamic Test System for 800 V AI Data Center Power	With the EA-ELR 21000 Tektronix introduces a dynamic test system, which acts as an auto-ranging, high-dynamic electronic load test system built on a fully regenerative architecture for validating the ±400 V and 800 V DC power architectures emerging in AI data centers. Rather than dissipating absorbed test energy as heat, the system returns it to the grid with up to 95 % regenerative efficiency, helping manufacturers conduct sustained high-power validation with less demand on lab power and cooling infrastructure. The system is built around the EA-ELR 21000-80 4U HS, a 30 kW regenerative electronic load module rated for up to 1,000 V and up to 80 A. The EA-ELR 21000 Dynamic Test System delivers up to 12 A/μs at 240 kW of current slew rate to emulate the rapid load transitions that challenge 800 V power shelves and power racks. It provides up to 1.92 MW of modular test capacity across up to eight racks and 64 loads, expanding in 30 kW increments. Each rack delivers up to 240 kW in a 0.6 m<sup>2</sup> footprint. The EA-ELR 21000-80 4U HS is rated for up to 1,000 V, 80 A and 30 kW in 4U. Integrated waveform generation supports repeatable load profiles, while coordinated controls enable multiple loads to operate as one synchronized test system. The modular architecture also allows to service individual modules without disrupting the entire system. The EA-ELR 21000 is also designed for solid-state transformers that convert medium-voltage AC power for high-power DC infrastructure.	15.09.2026 08:30:00	Sep	news_2026-10-01_10.jpg	\images\news_2026-10-01_10.jpg	https://www.tek.com/en/news/tektronix-unveils-regenerative-test-system-for-800v-ai-data-center-power	tek.com
140 W USB-C Power Delivery Reference Design	Eggtronic introduced a 140 W USB-C Power Delivery ...	13998	Product Release	140 W USB-C Power Delivery Reference Design	Eggtronic introduced a 140 W USB-C Power Delivery AC/DC reference platform for next-generation premium laptops and high-performance devices. This reference design is developed based on Renesas’ high-voltage GaN transistors combining Eggtronic's EPIC™ combo controller with Renesas' high-voltage GaN device, the TP70H150G4LSG (700 V, 150 m&ohm; R<sub>DS(on)</sub>). Unlike conventional high-power USB-C adapters that rely on costly LLC, Asymmetrical Half-Bridge (AHB), or Active Clamp Flyback (ACF) topologies, this reference design achieves efficiencies approaching 96 % while maintaining the bill of materials cost of a traditional QR flyback converter. The platform also delivers 94.5 % efficiency at 90 V<sub>AC</sub> input enabling compliance with the latest DOE Level VII energy efficiency requirements. At the heart of the solution is Eggtronic's EPIC combo controller, which integrates major control function into a single device, including totem pole Power Factor Correction (PFC), isolated primary-side regulation, synchronous rectification, proprietary low-latency isolated communication and USB Power Delivery protocol management. The platform's Totem Pole PFC overcomes two of the most common limitations of conventional implementations, EMI performance and light-load efficiency. The PFC stage feeds Eggtronic's proprietary QuarEgg™ regenerative flyback architecture, which utilizes a single primary-side switch to achieve higher efficiency and lower system cost than LLC, AHB, and ACF converters while maintaining the simplicity and economics of a QR flyback design.	14.09.2026 13:30:00	Sep	news_2026-10-01_15.jpg	\images\news_2026-10-01_15.jpg	https://www.eggtronic.com/eggtronic-introduces-high-efficiency-140w-usb-c-power-delivery-reference-design-powered-by-renesas-gan-transistors/	eggtronic.com
Anti-Surge Chip Resistors in 0402 Size	ROHM has developed the “SDR01 Series” of high anti...	14009	Product Release	Anti-Surge Chip Resistors in 0402 Size	ROHM has developed the “SDR01 Series” of high anti-surge chip resistors, delivering a rated power of 0.33 W in the 0402 (1005 Metric) size. Designed for electronic equipment where mounting densities continue to increase, the series is well suited for automotive, industrial, consumer electronics, and AI server applications. The products help save board space and reduce component count by enabling replacement of larger-size resistors and consolidation of resistors while maintaining the reliability required of anti-surge chip resistors. ROHM optimized the resistive element and electrode designs of the SDR01 Series. This enables high rated power to be guaranteed in the 0402 size while securing the reliability expected of high anti-surge chip resistors. The devices guarantee 0.33 W up to the rated terminal temperature of T<sub>k</sub> = 125°C. In addition, these products achieve a TCR of ±100 ppm/°C for 10 ohm; ≤ R ≤ 2.2 M&ohm;. By suppressing resistance-value fluctuations caused by temperature changes, the components support stable circuit operation and contribute to smaller, more reliable power supply circuits and peripheral interface circuits.	10.09.2026 06:30:00	Sep	news_2026-10-15_9.jpg	\images\news_2026-10-15_9.jpg	https://www.rohm.com/news-detail?news-title=2026-09-10_news_resistor&defaultGroupId=false	rohm.com
Thermoelectric Generators	Same Sky® (formerly CUI Devices) and its Therm...	14000	Product Release	Thermoelectric Generators	Same Sky® (formerly CUI Devices) and its Thermal Management Group expanded its thermoelectric generator (TEG) modules product line. Utilizing the temperature difference between the hot and cold side of the module to generate usable power, the SPG family of thermoelectric generators now offers output power up to 27.3 W in expanded package sizes from 30 x 30 mm<sup>2</sup> to 80 x 80 m mm<sup>2</sup> m with profiles as of e.g. 3.5 mm. They are suited for applications where waste heat is present, like industrial processes, to recover energy that would otherwise be lost. These TEG modules feature silicone sealing, continuous maximum hot side temperatures up to 300 °C, and graphite pad options for a simplified thermal interface. Additional specifications measured under conditions (T<sub>h</sub> = 300 °C / T<sub>c</sub> = 30 °C) include an open circuit voltage of 8 to 17.7 V<sub>DC</sub>, a matched load resistance of 0.83 to 5.7 &ohm;, a matched load output voltage of 4 to 8.8 V with a matched load output current of 1 to 5.7 A. The heat flow across the module is 90 to 525 W, while the heat flow density is 6.2 to 13.2 W/cm<sup>2</sup>.	09.09.2026 15:30:00	Sep	news_2026-10-01_17.jpg	\images\news_2026-10-01_17.jpg	https://www.sameskydevices.com/news/press-releases/same-sky-expands-thermoelectric-generators-product-line	sameskydevices.com
TDAP Stage 2 Certificate for EMC Chokes	The Würth Elektronik lab at its Quality Design Cen...	14008	Industry News	TDAP Stage 2 Certificate for EMC Chokes	The Würth Elektronik lab at its Quality Design Center Asia in Shenzhen/China has been awarded with the TDAP Stage 2 certificate for the product “choke for suppressing electromagnetic interference” by VDE Prüf- und Zertifizierungsinstitut GmbH. This entitles Würth Elektronik to conduct tests in its own lab at its Chinese site under the supervision of VDE experts. The test results are recognized by VDE and, if successful, can lead to VDE certification. The VDE Institute’s TDAP (Test Data Acceptance Program) accelerates the certification process, thereby reducing time to market. Specifically, the certification of the laboratory in Shenzhen means that Würth Elektronik is permitted to conduct acceptance testing of its common-mode chokes in accordance with IEC 60938. Assessment of the lab at the recently expanded Quality Design Center (QDC) Asia was accompanied by intensive technical discussions. The successful certification was followed by a presentation ceremony in Offenbach, where Yangyang Chen, Head of Würth Elektronik’s facility in Shenzhen, received the certificate.	09.09.2026 13:00:00	Sep	news_2026-10-15_8.jpg	\images\news_2026-10-15_8.jpg	https://www.we-online.com/en/news-center/press/press-releases?d=vde-certification	we-online.com
Battery Cells provide more Energy at the same Weight	Together with partners from research and industry,...	13987	Industry News	Battery Cells provide more Energy at the same Weight	Together with partners from research and industry, the Fraunhofer Institute for Solar Energy Systems ISE has modified the structure of battery electrodes so that the battery cells can store 10 to 15 percent more energy at the same weight. They achieved this by more than tripling the coating thickness of the battery electrodes - for example, in lithium-ion batteries - which simultaneously reduces the number of current collectors in the battery cell. The research team implemented the new electrode architecture in lithium-ion pouch cells manufactured using industry-standard processes. Furthermore, they successfully applied the concept to zinc-ion and sodium-ion battery cells. Normally, the anode and cathode consist of many thin, alternating layers of electrode coating and current collectors. Fraunhofer ISE has managed to increase the thickness of the electrode coating from the previously standard 100 to 200 μm to up to 800 μm, thereby significantly reducing the number of current collectors required. As a result, there is now much more space for active material, which increases the energy density by 10 to 15 percent, depending on the battery type and design. The research team initially validated the new electrode architecture for zinc-ion, sodium-ion, and lithium-ion batteries experimentally using small battery cells in the laboratory. For lithium-ion batteries, they also manufactured prototypes of pouch battery cells with this electrode structure on a semi-automated production line in the cleanroom of the Fraunhofer ISE Battery Materials and Cell Production Lab. The battery electrodes are PFAS-free and are manufactured without the use of toxic solvents.	09.09.2026 09:00:00	Sep	news_2026-10-01_4.jpg	\images\news_2026-10-01_4.jpg	https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/more-energy-at-the-same-weight-fraunhofer-ise-optimizes-battery-cells.html	ise.fraunhofer.de
Acquisition of Interconnect Technology Company	Harwin has acquired KEC Limited, a UK-based design...	13986	Industry News	Acquisition of Interconnect Technology Company	Harwin has acquired KEC Limited, a UK-based designer and manufacturer of rugged interconnect technologies for the aerospace, defence and high-end industrial sectors. Founded in 1979, KEC manufactures EMC backshells and panel fittings that deliver long-term, reliable operation in complex, mission-critical applications. Harwin will now add the full range of KEC technologies and services to its existing portfolio of high-reliability signal, power and coax connector technologies and accessories. In addition to expanding the Harwin product range, the acquisition will make available KEC’s circular and D-type EMC backshells, glands and panel fittings and fully bespoke solutions to a wider market thanks to Harwin’s global sales, distribution and support network.	09.09.2026 08:00:00	Sep	news_2026-10-01_3.jpg	\images\news_2026-10-01_3.jpg	https://www.harwin.com/blog/harwin-kec-acquisition	harwin.com
Common Mode Chokes with higher Voltage Rating	ITG Electronics has introduced its C201371B Series...	13992	Product Release	Common Mode Chokes with higher Voltage Rating	ITG Electronics has introduced its C201371B Series of 300 V<sub>AC</sub> NanoCrystal common mode chokes (CMCs), providing an EMI filtering option for higher-voltage electronic systems. This expansion of ITG's 250 V<sub>AC</sub> C201371A Series, the C201371B family increases the voltage rating to 300 V<sub>AC</sub>. The upgrade helps designers address more demanding operating conditions, increase safety margins against transient surges, and support compliance with applicable safety standards, including UL/IEC 60938-2 and IEC 62368-1. The series uses nanocrystalline core material, produced by rapidly cooling molten metal to create crystals with grain sizes on the nanoscale. The material's high permeability enables designers to achieve the required inductance with fewer winding turns. In turn, the chokes can provide lower direct current resistance (DCR), helping reduce power loss and improve overall system efficiency. Compared with ferrite-based common mode chokes, the C201371B Series can save approximately 30-60 % in space and weight. This combination of smaller size, lower weight and reduced DCR makes the series well suited to power electronics designs in which thermal performance, efficiency and board space are critical considerations. Available in through-hole configurations, the C201371B Series spans inductance values from 0.4 mH to 11.0 mH, DCR values from 20.0 m&ohm; to 380.0 m&ohm;, and maximum current ratings from 4.5 to 0.9 A. The components are designed for AC/DC converters used in industrial equipment and automotive applications, as well as other commercial and consumer electronics requiring compact common-mode noise suppression.	09.09.2026 07:30:00	Sep	news_2026-10-01_9.png	\images\news_2026-10-01_9.png	https://www.itg-electronics.com/en/series/950	itg-electronics.com
Battery Company relocates within Silicon Valley	Ensurge Micropower, a company active in solid-stat...	13985	Industry News	Battery Company relocates within Silicon Valley	Ensurge Micropower, a company active in solid-state lithium microbatteries, is relocating its San Jose operations. The move gives Ensurge a fully equipped, battery-focused environment, purpose-built to accelerate its proprietary lithium solid-state microbattery development and pilot-line operations, as well as a state-of-the-art space to host customers, partners, and stakeholders across med-tech, consumer electronics, IoT, and defense markets. The 32,000-square-foot facility is designed around the company's core technology development and operational needs, creating an environment for both pilot production and commercialization. Under the transition plan, Ensurge will still retain a defined process area at its current site through year-end to maintain continuous operations as equipment and workflows are transferred and qualified.	09.09.2026 07:00:00	Sep	news_2026-10-01_2.jpg	\images\news_2026-10-01_2.jpg	https://www.ensurge.com/en/posts/ensurge-micropower-relocates	ensurge.com
Electrical Safety Testers	The electrical safety testers of Kikusui’s TOS5400...	13991	Product Release	Electrical Safety Testers	The electrical safety testers of Kikusui’s TOS5400 Series perform two of the four fundamental safety tests: withstanding voltage and insulation resistance tests, both essential for ensuring product reliability and safety. This series complies with major international safety standards, including IEC, EN, BS, VDE, UL, CSA, GB, and JIS. In addition, to ensure stable and reliable measurements, the TOS5400 Series is equipped with a high-efficiency PWM switching amplifier, which means, that it can maintain a stable output voltage even when the AC line voltage or frequency fluctuates, enabling consistent evaluation in regions where the power supply is unstable. The discharge detection function allows the response speed (sensitivity) to be adjusted, making it possible to detect momentary discharges and high-frequency discharge components such as arc and corona discharges. The TOS5400 is also the first Kikusui withstanding voltage and insulation resistance tester featuring a touchscreen display. Its intuitive interface is claimed to simplify operation, to reduce setup time, and to support more efficient and easier test execution. It is well suited for R&D and QA testing, laboratories, production line inspections and certification bodies looking to enhance both the accuracy and efficiency of their safety evaluation processes.	09.09.2026 06:30:00	Sep	news_2026-10-01_8.png	\images\news_2026-10-01_8.png	https://global.kikusui.co.jp/products-index/safety-testers/	kikusui.co.jp
TMR Switch Family expanded with leaded TO-92 Package Option	Littelfuse announced the TX00AT314AMA Omnipolar TM...	13999	Product Release	TMR Switch Family expanded with leaded TO-92 Package Option	Littelfuse announced the TX00AT314AMA Omnipolar TMR Switch Sensor, the latest addition to the TX00 TMR Switch family. The TX00AT314AMA delivers the same performance as the SOT-23-3 TX00AS314TRA in a leaded TO-92 package and with South Korea country of origin, providing design teams with a new form factor option and a diversified supply chain. The TX00AT314AMA integrates a precision TMR (Tunnel Magnetoresistance) sensing element with CMOS signal-processing circuitry - including an on-chip voltage generator, low-noise amplifier, comparator, and Schmitt trigger. Like its SOT-23-3 sibling, it features X-axis (in-plane) magnetic sensing for detection of fields parallel to the sensor surface. The device operates with a typical supply current of 1.5 μA and supports high-speed detection up to 1 kHz. Like all TX00 family members, the TX00AT314AMA features omnipolar detection with a sensitivity of about 14 Gauss, allowing it to respond to both North and South magnetic poles without polarity alignment constraints. Its operate and release thresholds, combined with built-in hysteresis are said to enable bounce-free switching even in electrically noisy environments. Typical applications are building and home automation (smart meters with tamper detection, position and limit sensing, industrial automation (proximity sensing), consumer electronics (appliances, power tools, battery-powered IoT and wearable devices as well as utilities (gas, water, and heat metering).	08.09.2026 14:30:00	Sep	news_2026-10-01_16.jpg	\images\news_2026-10-01_16.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-expands-omnipolar-tmr-switch-family-with-leaded-to-92-package-option	littelfuse.com
600 V Super Junction MOSFETs	Alpha and Omega Semiconductor (AOS) released &alph...	13997	Product Release	600 V Super Junction MOSFETs	Alpha and Omega Semiconductor (AOS) released αMOS E2™ 600 V Super Junction MOSFETs: AOGT037V60DE2 (600 V, 37 m&ohm;) and AOGT060V60DE2 (600 V, 60 m&ohm;). These devices are suited for applications including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems. This MOSFET platform features a body-diode ruggedness with a di/dt of 1500 A/μs, in a top-side-cooled GTPAK™ package to increase thermal performance via the top-side cooling pad. As a result, system designers can enhance thermal dissipation and reclaim PCB space to maximize overall power density.	08.09.2026 12:30:00	Sep	news_2026-10-01_14.jpg	\images\news_2026-10-01_14.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductors-new-amos-e2-600v-super-junction-mosfets-support-optimized	aosmd.com
Europe’s Battery Storage Boom Accelerates	Europe’s battery storage market is entering its mo...	13951	Industry News	Europe’s Battery Storage Boom Accelerates	Europe’s battery storage market is entering its most transformative year yet, with annual installations forecast to rise from 32 GWh in 2025 to 57 GWh in 2026, a 78% year-on-year increase, according to EUPD Research’s latest EES Report© Europe H1 2026. The milestone signals a fundamental shift in Europe’s energy transition, as battery storage becomes critical infrastructure for renewable integration, grid flexibility and electrification across residential, commercial and utility-scale markets. Germany, Bulgaria, Italy, the United Kingdom and Spain are expected to lead Europe’s battery storage market in 2026. Bulgaria’s emergence among Europe’s leading markets demonstrates the transformative impact of EU recovery funding, highlighting growing momentum across Central and South-Eastern Europe. Growth is driven by falling battery costs, rising electricity prices, and increasing adoption of solar-plus-storage systems to maximize self-consumption and reduce energy bills. Commercial and industrial storage is gaining traction as businesses seek to reduce energy costs and optimize on-site generation, while utility-scale deployment is accelerating, supported by improving market opportunities and policy frameworks, despite persistent grid-connection and permitting challenges. The residential segment remains one of Europe’s strongest growth engines, with installations expected to increase from 11 GWh in 2025 to 15 GWh in 2026, a 36% annual increase. Germany remains the largest residential market, followed by Italy, the Netherlands, the UK and Austria. In 2025, BYD, Huawei, Sungrow and Fox ESS were the leading brands, with BYD and Huawei retaining prominent positions and together accounting for more than 30% of the total share.	07.09.2026 09:00:00	Sep	news_2026-09-15_4.png	\images\news_2026-09-15_4.png	https://eupd-group.com/europes-battery-storage-boom-accelerates-as-2026-installations-set-to-jump-78-yoy/	eupd-group.com
Smart Power Stage Exceeds 2 A per Square Millimeter	Infineon Technologies introduces the TDA235E5 and ...	13958	Product Release	Smart Power Stage Exceeds 2 A per Square Millimeter	Infineon Technologies introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon’s OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, this family delivers a power density exceeding 2 A/mm², which is claimed to set a new reference point for power stage performance in high-current AI processor applications. The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. The TDA235E5 and TDA235E0 integrate into Infineon’s end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails.	07.09.2026 08:30:00	Sep	news_2026-09-15_11.jpg	\images\news_2026-09-15_11.jpg	https://www.infineon.com/technology-news/2026/inftn202609-136	infineon.com
Low-Noise DC Power Supplies designed for Test Environments	Kikusui Electronics has introduced the PMX-E Serie...	13956	Product Release	Low-Noise DC Power Supplies designed for Test Environments	Kikusui Electronics has introduced the PMX-E Series of DC power solutions for the engineers’ daily work. Each unit is equipped with communication interfaces like LAN, USB, and RS-232C. These interfaces enable seamless connection to automated test setups, data acquisition systems, and remote-control environments. PMX-E weighs approximately 5–6 kg (depending on the model), and is optimized for benchtop use. All models feature front-facing output terminals, which simplify wiring and make connecting load harnesses faster. Depending on the model the output voltage is between 18 V and 500 V delivering between 0.1 A and 5 A.	04.09.2026 06:30:00	Sep	news_2026-09-15_9.png	\images\news_2026-09-15_9.png	https://global.kikusui.co.jp/w2-2/dc-power-supply-en/pmx-e/pmx-e/	kikusui.co.jp
Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies	XP Power introduces the ASB320 series of 320 W ful...	13963	Product Release	Baseplate-cooled 320 W Full-Brick AC/DC Power Supplies	XP Power introduces the ASB320 series of 320 W fully integrated, baseplate-cooled AC/DC power supplies offering single output from 12 V to 54 VDC in an encapsulated brick format. Global ITE safety approvals, Class B emissions and a low-profile rugged mechanical design make these power supplies suitable for space-constrained industrial automation, communications, test and measurement, and analytical instrumentation equipment. Featuring a built-in EMC filter, AC fuse, and bulk storage capacitor, the units reduce external components. The efficiency of up to 94 % and baseplate cooling at operating temperatures from -40 °C to +90 °C enable operation in compact sealed or fanless systems. The ASB320 offers seven single DC output voltages: 12, 15, 24, 28, 36, 48, and 54 VDC, and features a universal input range of 90 to 264 VAC. With peak power capability of up to 360 W for 5 s, the units provide headroom for transient loads without oversizing. In addition, the ±5 % output voltage trim helps engineers optimize system performance for specific load requirements. The units offer in-built over current, over voltage and over temperature protection circuitry.	03.09.2026 13:30:00	Sep	news_2026-09-15_16.jpg	\images\news_2026-09-15_16.jpg	https://www.xppower.com/resources/press-releases/320w-ac-dc-power-supplies-ITE%20applications	xppower.com
3D-PEIM 2026 Registration Now Open	The rapid emergence of AI infrastructure is fundam...	13953	Event News	3D-PEIM 2026 Registration Now Open	The rapid emergence of AI infrastructure is fundamentally reshaping power electronics, advanced packaging, and heterogeneous integration. Higher current densities, vertical power delivery architectures, thermal management, reliability, advanced materials, and AI-assisted design are becoming central challenges for next-generation computing systems. 3D-PEIM 2026 brings together researchers and industry leaders developing the technologies that will enable this transformation. Taking place November 16–19, 2026 at Arizona State University in Tempe, Arizona (USA), the symposium offers a technical program spanning the complete ecosystem of power electronics integration - from materials and manufacturing to system architecture and AI-driven design. This year’s program features a collection of plenary and keynote presentations addressing the rapidly evolving relationship between AI computing and power electronics. The presentations are complemented by invited talks on AI-enabled EDA, AI-driven power electronics co-design, advanced thermal solutions, integrated magnetics, heterogeneous packaging, and high-density voltage regulation, highlighting the multidisciplinary innovations driving future AI hardware. Beyond the Technical Sessions four expert-led tutorials on advanced packaging, sintering technologies, digital twins, and magnetic materials as well as an industry-academic panel discussion on key challenges in 3D power electronics packaging and manufacturing will complement the program.	03.09.2026 11:00:00	Sep	news_2026-09-15_6.jpg	\images\news_2026-09-15_6.jpg	https://www.3d-peim.org/registration/	3d-peim.org
PCIM Asia Shenzhen 2026 with higher international Attendance	PCIM Asia Shenzhen concluded its 2026 edition at t...	14001	Event News	PCIM Asia Shenzhen 2026 with higher international Attendance	PCIM Asia Shenzhen concluded its 2026 edition at the Shenzhen World Exhibition & Convention Center on 28 August. For three days 271 companies showcased across 30,000 square metres of exhibition space products and technologies from across the power electronics value chain, including solutions for e-mobility, AI data centres and renewable energy & smart energy. Alongside the exhibition, the PCIM Asia Shenzhen Conference featured 131 academic presentations by senior experts, scholars and representatives of leading global companies. Together, the exhibition and conference enabled discussion between companies, researchers and technical specialists, earning positive feedback from participants throughout the event. Added-up, 25,313 visitors attended the event, which is a 49 % increase over PCIM Asia Shanghai 2025, and 1,300 visitors (183 % increase) came from overseas. Mitsubishi Electric and Infineon Technologies supported PCIM Asia Shenzhen as Strategic Partners, with Semikron Danfoss, Fuji Electric and ROHM participating as Platinum Sponsors. The next event in PCIM's China series, PCIM Asia Shanghai, will take place from 24 – 26 August 2027 at the Shanghai New International Expo Centre in China.	03.09.2026 06:00:00	Sep	news_2026-10-15_1.jpg	\images\news_2026-10-15_1.jpg	https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en/press/press-releases/2026/PCIM26_FR.html	pcimasia-shanghai.com
50 W and 100 W DC/DC Converters with 4:1 Input Range	RECOM has expanded its portfolio of isolated DC/DC...	13964	Product Release	50 W and 100 W DC/DC Converters with 4:1 Input Range	RECOM has expanded its portfolio of isolated DC/DC converters with the RP50-AW and RP100-FW series. The converter families combine 4:1 input voltage ranges with robust isolation and comprehensive protection features for reliable operation in demanding environments. The RP50-AW series delivers up to 50 W output power in a compact 1×1 square inch footprint. The series supports input voltage ranges from 9-36 VDC and 18-75 VDC, offers efficiencies up to 93%, and features 2.25 kVDC isolation. In addition to single-output versions, dual-output models are also available. The operating temperature range extends from -40 °C to +105 °C, while an optional heatsink version improves thermal performance in high ambient conditions. For higher power requirements, the RP100-FW series provides up to 100 W output power with efficiencies up to 94 %. The series also supports a 4:1 input range of 9-36 VDC or 18-75 VDC. They operate in the temperature range from -40 °C to +110 °C and at altitudes up to 5000 m. Dimensions of 50.8 × 25.4 × 10.7 mm³ are achieved without heatsink, while an optional heatsink version measuring 50.8 × 26.5 × 32.2 mm³ improves thermal performance in demanding operating conditions. Both series integrate several protection functions including overvoltage, overload, overtemperature and continuous short-circuit protection, together with remote ON/OFF control supporting positive or negative logic. They both comply with current RoHS and REACH requirements. The RP50-AW and RP100-FW series are suitable for industrial control systems, test and measurement equipment, communication infrastructure and transportation-related electronics.	02.09.2026 14:30:00	Sep	news_2026-09-15_17.jpg	\images\news_2026-09-15_17.jpg	https://recom-power.com/en/rec-n-new-50w-and-100w-dc!sdc-converters-combine-high-power-density-with-41-ultra-wide-input-range-480.html?5	recom-power.com
Collaboration on Solid-State Transformers and Sidecars for AI Power	Infineon Technologies and Skeleton Technologies, w...	13952	Industry News	Collaboration on Solid-State Transformers and Sidecars for AI Power	Infineon Technologies and Skeleton Technologies, which is active in high-power energy storage systems e. g. for AI data centers, have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency, resilient power solutions for data centers. Solid-state transformers (SSTs) and high-power sidecars are increasingly important building blocks for AI data center infrastructure. They enable more efficient power conversion from grid to core and higher system resilience. Accordingly, the two companies aim to advance these technologies to improve energy efficiency and system performance throughout the power delivery chain. Under the agreement, Infineon and Skeleton will jointly explore and develop advanced architectures for the entire AI data center power chain that delivers electricity from grid to core. This includes next-generation SSTs for medium-voltage AC to high-voltage DC conversion. The companies intend to combine Infineon’s high-voltage CoolSiC™ power semiconductors with Skeleton’s expertise in power conversion systems and supercapacitor technology. The companies are also collaborating on GaN-based peak-shaving systems that combine Skeleton’s supercapacitor technology with Infineon’s CoolGaN™ power semiconductors.	02.09.2026 10:00:00	Sep	news_2026-09-15_5.jpg	\images\news_2026-09-15_5.jpg	https://www.infineon.com/technology-news/2026/inftn202609-134	infineon.com
High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission	Würth Elektronik is expanding its optoelectronics ...	13960	Product Release	High-Speed Optocouplers for fast and Interference-Resistant Signal Transmission	Würth Elektronik is expanding its optoelectronics portfolio with the WL-OCHS high-speed optocoupler. This component is designed for high-speed digital signal transmission between galvanically isolated circuit sections. The optocoupler supports data rates from 1 MBd to 10 MBd and provides an isolation voltage of up to 5000 V<sub>RMS</sub>. Optocouplers offer galvanic isolation of high voltages and potential differences. However, the short switching times (tpHL/tpLH) of 100 ns to 1500 ns enable the high-speed optocoupler to transmit signals with significantly lower delay than conventional optocouplers. Thanks to its high CMTI (common-mode transient immunity), the optocoupler ensures reliable signal transmission even during rapid input/output voltage changes in demanding, electrically noisy environments. In addition, a copper leadframe improves resistance to corrosion and environmental influences, significantly enhancing the robustness of the new optocoupler series. The device is suitable for microcontroller, FPGA, and DSP interfaces, as well as for serial communication interfaces such as UART, SPI, and RS-232/RS-485. Typical applications therefore include measurement and control technology, industrial electronics in high-interference environments, medical devices requiring safe electrical isolation, in addition to PLC and automation systems.	01.09.2026 10:30:00	Sep	news_2026-09-15_13.jpg	\images\news_2026-09-15_13.jpg	https://www.we-online.com/en/news-center/press/press-releases?d=wl-ochs	we-online.com
Collaboration on Power Semiconductor Solutions for EVs and HEVs	Nexperia will explore a strategic collaboration on...	13950	Industry News	Collaboration on Power Semiconductor Solutions for EVs and HEVs	Nexperia will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in GaN and SiC semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on the existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms. The companies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems.	01.09.2026 08:00:00	Sep	news_2026-09-15_3.png	\images\news_2026-09-15_3.png	https://www.nexperia.com/about/news-events/press-releases/nexperia-explores-collaboration-on-next-generation-power-semiconductor-solutions-for-electrified-powertrains-with-aurobay-technologies	nexperia.com
European Partnership with Power Electronics Distribution Company	SemiQ has announced a distribution agreement with ...	13954	Industry News	European Partnership with Power Electronics Distribution Company	SemiQ has announced a distribution agreement with Ibérica Semiconductores de Potencia, a Spanish-headquartered specialist in power electronics. This partnership expands SemiQ’s European reach and support for its range of high performance SiC MOSFETs and Schottky diodes. Under the deal, Ibérica will have access to SemiQ’s complete portfolio of modules, discrete and bare-die products, and will provide these with application and design support to power system developers across the entire continent. Headquartered in Madrid, Ibérica will lead the development of SemiQ’s business in Spain, while supporting customers and opportunities across Europe.	26.08.2026 12:00:00	Aug	news_2026-09-15_7.jpg	\images\news_2026-09-15_7.jpg	https://semiq.com/semiq-expands-european-reach-and-support-through-partnership-with-power-electronics-distribution-specialist-isp/	semiq.com
Multiaxial coreless Halleffect Current Sensor for (H)Evs	Texas Instruments (TI) introduced a multiaxial cor...	13965	Product Release	Multiaxial coreless Halleffect Current Sensor for (H)Evs	Texas Instruments (TI) introduced a multiaxial coreless Hall-effect current sensor designed for all hybrid electric vehicle and electric vehicle (HEV/EV) traction inverter applications. The TMCS2100-Q1 sensor offers current sensing through the combination of multiaxial measurement and a proprietary algorithm, which is said to eliminate the trade-off between precision and system size in traction inverter designs. While existing coreless solutions are limited to single-axis measurements, the TMCS2100-Q1 sensor measures magnetic fields in both horizontal and vertical directions. This multiaxial measurement is 20 times more accurate than single-axis alternatives, achieving displacement error of less than 1 % at 0.4 mm movement and as low as 0.25 % at 0.1 mm. This level- of precision improves the EV powertrain torque control loop, maximizing efficiency and power delivery across varying load and thermal conditions. TI’s current sensing technology measures both axes simultaneously. Vibration during vehicle operation creates movement between the sensor and conductor, causing single-axis, differential coreless sensors to lose accuracy. The TMCS2100-Q1 sensor reduces vibration-induced error by measuring magnetic fields in both horizontal and vertical axes at once. By eliminating the magnetic core without sacrificing precision, the TMCS2100-Q1 sensor enables smaller, more power-dense traction inverter designs, helping automakers build EVs that are more efficient.	25.08.2026 15:30:00	Aug	news_2026-09-15_18.png	\images\news_2026-09-15_18.png	https://www.ti.com/about-ti/newsroom/news-releases/2026/ti-debuts-new-approach-to-current-sensing-for-unprecedented-accuracy-in-hev-and-ev-traction-inverter-designs.html	ti.com
650 V IGBTs	ROHM has developed its 4<sup>th</sup> Generation o...	13961	Product Release	650 V IGBTs	ROHM has developed its 4<sup>th</sup> Generation of 650 V IGBTs, which is well-suited for automotive electric compressors and HV heaters, as well as for inverters in industrial equipment. The automotive-grade 650 V-class products operate with V<sub>CE(sat)</sub>= 1.55 V and comply with the AEC-Q101 automotive. The devices can withstand short-circuits for 7 μs at T<sub>j</sub> = 25 °C. The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR / RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website.	25.08.2026 11:30:00	Aug	news_2026-09-15_14.jpg	\images\news_2026-09-15_14.jpg	https://www.rohm.com/news-detail?news-title=2026-08-25_news_igbt&defaultGroupId=false	rohm.com
German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company	Infineon Technologies has acquired C2i Semiconduct...	13937	Industry News	German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company	Infineon Technologies has acquired C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology is said to complement Infineon’s portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The transaction is expected to close in the third quarter of calendar year 2026. This acquisition aims to strengthen Infineon’s position in power solutions for AI data centers and create a center of excellence for digital power technologies in India. C2i Semiconductors brings expertise in software-defined power management and system-level power architectures. Software-defined power solutions combine advanced power semiconductors with intelligent digital control and software algorithms to optimize power conversion, regulation and system performance in real time. As increasingly powerful AI processors create highly dynamic and rapidly changing power demands, power delivery systems must respond faster and more precisely to sudden load fluctuations while maintaining efficiency and system stability. By adding intelligence to the power delivery architecture, software-defined solutions help data center operators improve efficiency, reduce power losses, and support the increasing power density requirements of next-generation AI processors. C2i Semiconductors’ technology takes a system-level approach to power delivery, spanning the path from grid to core and enabling more intelligent and adaptive power architectures for AI infrastructure.	24.08.2026 12:00:00	Aug	news_2026-09-01_7.png	\images\news_2026-09-01_7.png	https://www.infineon.com/press-release/2026/infpr202608-129	infineon.com
1000 V Wire-to-Board Connector for Automotive Powertrains	The high-voltage ZE150HV Series wire-to-board conn...	13957	Product Release	1000 V Wire-to-Board Connector for Automotive Powertrains	The high-voltage ZE150HV Series wire-to-board connector from Hirose is now commercially available. Suitable for electric vehicle (EV) and hybrid electric vehicle (HEV) powertrains, the connector features a 4.5 mm pitch and supports 1000 V AC/DC, 10 A per pin, and operating temperatures up to 125 °C. Engineered to meet IEC 60664 standards (Pollution Degree 2, altitude 6,000 m), the ZE150HV combines reliable electrical performance with mechanical stability. Traditionally, there is a standard distance required between pins of 6.8 mm to achieve 1000 V. The ZE150HV Series features a patented design that reduces this required distance to 4.5 mm. By placing proprietary ribs between the contacts, Hirose has reduced the size of the connector to support miniaturization of powertrain and other high-voltage systems. The double-spring structure increases pressure, strengthening the contact force and stabilizing the connection under severe vibration. A housing and built-in connector position assurance (CPA) mechanism helps prevent incomplete mating. This reduces the risk of electrical arcing or exposure, especially important in high-voltage environments.	24.08.2026 07:30:00	Aug	news_2026-09-15_10.png	\images\news_2026-09-15_10.png	https://info.hirose.com/ze150hv	hirose.com
Acquisition of VPD Company	Navitas signed a definitive agreement to acquire C...	13949	Industry News	Acquisition of VPD Company	Navitas signed a definitive agreement to acquire Claros, a power management solutions company developing vertical power delivery (VPD) and integrated voltage regulator (IVR) technology for next-generation AI data centers, in a transaction valued at up to approximately $232.8 million. Navitas’ potential acquisition of Claros would extend the Company’s AI infrastructure portfolio from the grid all the way to the xPU by bringing VPD and IVR capabilities that can directly power the high-current, high-speed processors at the heart of AI systems. On the last step of 800 V HVDC architectures, traditional voltage regulator modules (VRMs) push power sideways across the board, and as xPUs demand thousands of amps and near-instant response times, this lateral approach hits what Navitas refers to as a "power wall". Bandwidth and compute performance are constrained by the limitations of existing power delivery systems. Through the combination of Navitas and Claros, the company expects to break through that wall from grid-to-xPU. Claros’ VPD and IVR technologies stack power conversion, drive, control, and passives into a single, compact package. By placing this solution directly beneath or inside the chip package or printed circuit board, power travels only millimeters instead of inches. The result is ultra-fast transient response, significantly lower impedance, higher efficiency at sub-volt levels, and the power density required for the next generation of AI compute. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close before year-end, subject to customary closing conditions, including applicable regulatory approvals.	24.08.2026 07:00:00	Aug	news_2026-09-15_2.jpg	\images\news_2026-09-15_2.jpg	https://www.navitassemi.com/en/press-releases/navitas-to-acquire-claros-advancing-ai-infrastructure-with-vpd-and-ivr-technology-for-grid-to-xpu	navitassemi.com
Zait Akcam appointed as Managing Director of GVA	GVA Leistungselektronik has appointed Zait Akcam a...	13931	People	Zait Akcam appointed as Managing Director of GVA	GVA Leistungselektronik has appointed Zait Akcam as its new Managing Director. Mr. Akcam is already well known to many customers and partners through his many years as Head of Sales at the Mannheim/Germany-based company. With more than 30 years of experience in the semiconductor industry and his knowledge of international markets, he brings considerable industry and management expertise to his new role. In his new position, Akcam will drive the continued development of GVA, with a particular focus on the needs of customers and partners. One of his key priorities will be the ongoing development of the company’s product and service portfolio. The aim is to further strengthen GVA’s position as a trusted partner in power electronics and to continue providing customers with innovative solutions combined with the high level of service they have come to expect.	22.08.2026 06:00:00	Aug	news_2026-09-01_1.jpg	\images\news_2026-09-01_1.jpg	https://www.gva-power.de/en/	gva-power.de
650 W Thick Film Power Resistors	The power capabilities and compact package of thes...	13947	Product Release	650 W Thick Film Power Resistors	The power capabilities and compact package of these devices by Vishay allow designers to reduce the number of parallel resistors required. Their performance is supported by a "cold system" baseplate design that enables efficient heat transfer to an external heatsink, maintaining stable operation over a wide temperature range from -55 °C to +155 °C. RPWA 650 series devices integrate a power resistor and optional embedded NTC temperature sensor in a single housing. Customizable cabling and an easy-mount design with self-calibrating pressure eliminate the need for board-level soldering, reduce wiring and assembly complexity, and enable faster plug and play integration in power modules and assemblies. Available in a range of resistance values from 6.2 Ω to 1 MΩ, with tolerances down to ± 5 %, the RPWA 650 series supports a variety of circuit functions, including precharge, discharge, active discharge, power conversion, and snubber operations. The devices are suited for automotive, energy, industrial, medical, and avionics systems used in harsh environments. Their maximum operating voltage is specified up to 6000 V<sub>DC</sub> with a dielectric strength to 7000 V<sub>RMS</sub>, and typical self-inductance of ≤ 40 nH. For high voltage and fast-switching circuits, this combination enables accurate energy dissipation and minimizes transient overshoot. The devices also offer a pulse energy capability, supporting repetitive operation up to 3.5 J per pulse for 50 μs pulses. The RoHS-compliant resistors are pending AEC-Q200 qualification.	20.08.2026 15:30:00	Aug	news_2026-09-01_17.jpg	\images\news_2026-09-01_17.jpg	https://www.vishay.com/en/company/press/releases/2026/RPWA-650/	vishay.com
Collaboration on Battery Management Systems and Integrated PowerBox Solutions	Schaeffler and CATL have signed a memorandum of un...	13936	Industry News	Collaboration on Battery Management Systems and Integrated PowerBox Solutions	Schaeffler and CATL have signed a memorandum of understanding (MoU) in the field of e-mobility for the joint development of Battery Management Systems (BMS) and "X-in-1" Integrated PowerBox (IPB) solutions. The collaboration builds on an already secured customer project and addresses the growing demand for electrification solutions in the European market. Both companies are pursuing a long-term partnership.	20.08.2026 11:00:00	Aug	news_2026-09-01_6.jpg	\images\news_2026-09-01_6.jpg	https://www.schaeffler.com/en/media/press-releases/press-releases-detail.jsp?id=88211712	schaeffler.com
18 V GaN FET e.g. for Next-Generation AI Power Architectures	Efficient Power Conversion (EPC) announced the mas...	13939	Product Release	18 V GaN FET e.g. for Next-Generation AI Power Architectures	Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that allows it to replace MOSFETs with ratings up to 25 V. AI power architectures are transitioning to 800 V DC power distribution, adopting 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the EPC2370 delivers a benchmark 101 A continuous current rating, 0.28 mΩ typical R<sub>DS(on)</sub>, 26 nC gate charge in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package. The EPC2370 is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. Its 18 V continuous and 22 V transient ratings provide voltage margin for reliable operation while enabling peak efficiencies of 98 % and full-load efficiencies of 97 % in high-density power modules. Beyond AI servers, the EPC2370 is also suited for high-current DC/DC converters used in high-performance computing, telecommunications infrastructure, and advanced industrial power systems. To accelerate evaluation and product development, EPC also offers the EPC90168 evaluation board. Measuring 2" × 2", the EPC90168 features two EPC2370 GaN FETs configured as a half bridge. The board includes all critical components and an optimized layout to maximize switching performance. It also provides multiple probe points for convenient waveform measurements and efficiency evaluation.	20.08.2026 07:30:00	Aug	news_2026-09-01_9.jpg	\images\news_2026-09-01_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3353/epc-announces-mass-production-of-epc2370-18-v-gan-fet-for-next-generation-ai-power-architectures	epc-co.com
1 W Isolated DC/DC Converters for Medical and ITE Applications	Bel Fuse launched its PTM1-S Series, a family of 1...	13946	Product Release	1 W Isolated DC/DC Converters for Medical and ITE Applications	Bel Fuse launched its PTM1-S Series, a family of 1 W isolated DC/DC converters engineered to meet the growing demand for medically certified, high-isolation power in compact form factors. Housed in an encapsulated SIP-7 package, the series is built for medical instrumentation, harsh-environment equipment, and industrial control systems that require both dual medical and ITE safety certification in a single part. The PTM1-S Series offers 6000 V<sub>DC</sub> isolation and reinforced insulation rated for 300 V<sub>AC</sub>, protecting against surges and cross-circuit faults in applications where isolation integrity is critical. The series is dual certified to UL/IEC 62368 for information technology equipment and EN 60601 and 2xMOOP for medical use, giving engineers the flexibility to qualify a single part number across both medical and industrial designations rather than stocking separate solutions for each. The converters are rated for continuous operation across an extended -40 °C to +100 °C temperature range, making them well suited to harsh outdoor and industrial environments as well as controlled clinical settings. With a 1:1 input-to-output voltage ratio, the initial lineup spans 5, 12, 15, and 24 V<sub>DC</sub> input options with 5 and 12 V<sub>DC</sub> single outputs, covering the input rails most common in medical and industrial control platforms.	19.08.2026 14:30:00	Aug	news_2026-09-01_16.jpg	\images\news_2026-09-01_16.jpg	https://www.belfuse.com/resources/news/bel-launches-ptm1-s-series-1w-isolated-dc-dc-converters-for-medical-and-ite-applications	belfuse.com
Palm-sized Split Core Current Sensors with Accuracy up to 0.01 %	Yokogawa Test & Measurement released its second-ge...	13943	Product Release	Palm-sized Split Core Current Sensors with Accuracy up to 0.01 %	Yokogawa Test & Measurement released its second-generation of AC/DC split core current sensors, the CT500SA and CT200SA. Designed specifically for space-constrained environments, such as in-vehicle xEV testing, they offer accurate current measurements for the 200 A and 500 A ranges. The sensors are compatible with both power analyzers and waveform measurement instruments. The main sensor unit of both devices measures 110 mm width × 62 mm height × 25 mm depth. Each features a single unlock-and-open button for one-handed clamp-on installation, while the body includes both an M4 screw hole and a cable tie slot to secure the sensor in place. The CT500SA and CT200SA guarantee accuracy of ±0.1 % from -40 °C to 85 °C. Within 23±5 °C range this improves further still, achieving a peak accuracy of ±0.09 % of reading +0.01 % of full scale. Both models guarantee accuracy “one order of magnitude higher than that of conventional current sensors”, equivalent to through-hole types but with the convenience of clamp-on installation. Available frequency bandwidths differ between the two models. The CT500SA delivers a bandwidth of 500 kHz (−3 dB), while the CT200SA extends to 1 MHz (−3 dB). The CT200SA and CT500SA can also measure switching frequencies, used for motor inverter validation and requiring wideband measurement. Both models hold a phase accuracy of ±0.1° (0.1 Hz ≤ f ≤ 1 kHz). Major Target Markets are EV/xEV, Automotive, Renewable energy: Photovoltaic (PV) / solar and HVAC.	19.08.2026 11:30:00	Aug	news_2026-09-01_13.jpg	\images\news_2026-09-01_13.jpg	https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-to-release-ct500sa-and-ct200sa-acdc-split-core-current-sensors/	tmi.yokogawa.com
Radiation-Hard Power GaN FETs for Space Computing	EPC Space announced three eGaN® power transis...	13959	Product Release	Radiation-Hard Power GaN FETs for Space Computing	EPC Space announced three eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems. The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads. All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm²/mg, and neutron > 4E15 n/cm². The EPC7050PCSH is a 15 V device with 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with typical R<sub>DS(on)</sub> of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability and typical R<sub>DS(on)</sub> of 0.5 mΩ. All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5 V – 12 V, delivering an R<sub>DS(on)</sub> × Q<sub>G</sub> figure of merit to enable higher-frequency and higher-efficiency operation. The devices also target point-of-load buck converters/IVRs supplying 0.8 V core voltage for the processor.	18.08.2026 09:30:00	Aug	news_2026-09-15_12.jpg	\images\news_2026-09-15_12.jpg	https://epc.space/2026/08/epc-space-introduces-radiation-hard-egan-fets-for-next-generation-space-computing/	epc.space
Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules	Sumitomo Bakelite has developed a high-power-densi...	13940	Product Release	Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules	Sumitomo Bakelite has developed a high-power-density 3D SiC-MOSFET power module with a resin-insulated dual-layer structure through joint research with Tohoku University. By optimizing the thermal expansion characteristics and elastic modulus of the resin insulated substrate and epoxy molding compound, Sumitomo Bakelite significantly reduced module warpage. In addition, the adoption of an Ag semi-sintering bonding material improved bonding reliability with the heat sink. By replacing conventional ceramic insulated substrates with resin-insulated substrates, the mismatch in the coefficients of thermal expansion between the substrate and copper is significantly reduced, suppressing power module warpage to 20 μm or less. The use of resin-insulated substrates suppresses module warpage caused by differences in thermal expansion between substrate materials. This enables a thinner Thermal Interface Material (TIM) layer between the module and the heat sink, significantly reducing thermal resistance while ensuring highly reliable bonding to the heat sink and significantly improving mountability. Ag semi-sintering TIM enables low-temperature, pressureless bonding, unlike conventional soldering and sintered-silver bonding processes that require high temperatures and high pressure, thereby reducing the thermal stress applied to the module. In addition, its high adhesion and low elastic modulus enable a bond-line thickness of less than 100 μm while significantly improving the reliability and durability of the bonding layer between the module and the heat sink. Compared with industry-standard solutions, this technology is said to make it possible to reduce the volume of power units by approximately 50 %.	18.08.2026 08:30:00	Aug	news_2026-09-01_10.png	\images\news_2026-09-01_10.png	https://www.sumibe.co.jp/english/topics/2026/it-materials/0804_01/index.html	sumibe.co.jp
2027 IEEE Electronic Components and Technology Conference: Call for Papers	The 2027 IEEE Electronic Components and Technology...	13955	Event News	2027 IEEE Electronic Components and Technology Conference: Call for Papers	The 2027 IEEE Electronic Components and Technology Conference (ECTC), the technical conference and product exhibition for the world’s semiconductor packaging industry, has announced a Call for Papers. ECTC 2027 will take place June 1-4, 2027 at the Gaylord Rockies Resort & Convention Center in Denver, CO/USA. More than 2,500 scientists, engineers and businesspeople from around the world are expected to attend. The deadline for abstract submissions is October 5, 2026. The ECTC 2027 technical program will address the latest developments, trends and applications in a range of advanced packaging topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, chiplet architectures, hybrid bonding, wafer-level packaging (WLP) and panel-level packaging (PLP), fan-out and fan-in packaging, flip-chip technologies, integrated photonics and optoelectronics, LEDs, 5G, quantum computing and systems, and other emerging technologies in electronics packaging. Previously unpublished, non-commercial paper abstracts are requested in areas like Applied Reliability, Assembly and Manufacturing Technology, Electrical Design and Analysis, Emerging Technologies, Interconnections, RF, High-Speed Components & Systems, Materials & Processing, Packaging Technologies, Photonics and Thermal/Mechanical Simulation & Characterization.	17.08.2026 13:00:00	Aug	news_2026-09-15_8.jpg	\images\news_2026-09-15_8.jpg	https://ectc.net/	ectc.net
Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications	Panasonic Industry Europe released the ECWFJ serie...	13944	Product Release	Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications	Panasonic Industry Europe released the ECWFJ series of metallized polypropylene film capacitors. The series is aimed at engineers working across industrial and automotive power electronics (it is qualified to AEC-Q200 standards) who require dependable performance under demanding environmental conditions. The ECWFJ series demonstrates resistance to moisture, maintaining stable operation under conditions of 40 °C and 95 % relative humidity for up to 1.000 hours. Typical application areas include electric mobility systems such as DC/DC converters, on-board chargers and e-compressors, along with solar inverters and EV charging infrastructure. The series is also designed for use in industrial power supplies, LED lighting, smart meters and embedded power systems, where consistent electrical performance and durability are essential. Technically, the ECWFJ series covers DC voltage ratings from 600 V up to 1.100 V. Capacitance values range from 1 μF up to 12 μF. The capacitors operate across a temperature range from -40 °C up to +110 °C, with the 1.000 V variant rated up to 105 °C. The devices are engineered to withstand thermal shock from -55 °C up to 85 °C over 1.000 cycles and can tolerate maximum ambient temperatures of up to 125 °C for limited durations. Panasonic’s proprietary patterned metallization with an integrated fuse mechanism helps ensure stable capacitance over the lifetime of the component and enhances overall system reliability. The design is complemented by a flame-retardant plastic enclosure and non-conductive resin, supporting compliance with UL and other regulatory standards. In addition, the capacitors are fully compliant with RoHS requirements.	17.08.2026 12:30:00	Aug	news_2026-09-01_14.jpg	\images\news_2026-09-01_14.jpg	https://industry.panasonic.eu/company/newsroom/film-capacitor-cost-effective-ECWJF	industry.panasonic.eu
Acquisition of High-Voltage Product Line	Dean Technology (DTI) and HVP High Voltage Product...	13934	Industry News	Acquisition of High-Voltage Product Line	Dean Technology (DTI) and HVP High Voltage Products of Munich, Germany, have announced an addition to their catalog of products. DTI and HVP have jointly acquired the high voltage measurement and driver businesses of North Star High Voltage (NSHV), a manufacturer of high voltage probes. NSHV has developed and defined high voltage measurement for the last 24 years. Their high voltage probes are designed to provide high accuracy while providing wide bandwidth capability, rugged packaging, and overall convenience. Two main types of probes are available – the PVM series designed for portability, and the VD series optimized for long life and accuracy. Both types of probes can be used with 1 MΩ input oscilloscopes standard, or with meters of various input impedances.	17.08.2026 09:00:00	Aug	news_2026-09-01_4.png	\images\news_2026-09-01_4.png	https://www.deantechnology.com/dti-hvp-acquires-new-high-voltage-product-line/	deantechnology.com
Digital Isolators in Quad-Channel Configuration	Toshiba Electronics Europe has expanded its DCL34x...	13942	Product Release	Digital Isolators in Quad-Channel Configuration	Toshiba Electronics Europe has expanded its DCL34xx0B series of standard digital isolators with four quad-channel devices for industrial automation equipment. These devices achieve a typical current consumption of 0.2 mA per channel while supporting data rates of up to 25 Mbit/s. Applications include programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor drives, inverters and switching power supplies. The DCL34xx0B series operates from supply voltages of 2.25 V to 5.5 V and provides a minimum isolation voltage of 3000 V<sub>rms</sub>. Housed in a SSOP16 package, the devices support operation across a temperature range of -40 °C to +125 °C. Using Toshiba’s magnetic-coupling isolation technology, these devices provide isolated signal transmission with a common-mode transient immunity (CMTI) of 30 kV/μs (min). The additions comprise the DCL340L0B and DCL340H0B with four forward channels and zero reverse channels (4:0), and the DCL342L0B and DCL342H0B with two forward channels and two reverse channels (2:2).	13.08.2026 10:30:00	Aug	news_2026-09-01_12.jpg	\images\news_2026-09-01_12.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260813-1.html	toshiba.semicon-storage.com
Single and Three Phase Common Mode HEMP Power Line Filters	The EMC solutions provider EMIS offers a range of ...	13962	Product Release	Single and Three Phase Common Mode HEMP Power Line Filters	The EMC solutions provider EMIS offers a range of EMI powerline filters designed to protect sensitive electrical and electronic equipment against High-Altitude Electromagnetic Pulse (HEMP) and conducted Electromagnetic Interference (EMI/RFI) resulting from high-energy electromagnetic events, including nuclear-induced electromagnetic disturbances and lightning-related transients. EMIS SMF913 and TMF913HEMP EMI Power Line Filters provide single phase and three phase configurations, and suitable for AC and DC facility power applications. With current ratings from 6 to 3000 A, they are able to support applications ranging from control panels and communication equipment to high-current facility power distribution systems. The EMIS HEMP filter design features Integrated 80 kA peak surge-current protection (8/20 μs) which provides protection against lightning-induced surges and power switching transients. Standard Performance models provide 100 dB insertion loss from 30 MHz to 18 GHz, followed by 90 dB attenuation up to 40 GHz. Extended-performance models provide 100 dB attenuation from 14 kHz to 40 GHz, offering enhanced protection against both low-frequency conducted interference and high-frequency electromagnetic disturbances. Built-in discharge resistors safely dissipate energy stored in internal capacitors after power is switched off, improving operator safety and reducing maintenance hazards. The EMIS HEMP filters are designed in accordance with the requirements of MIL-STD-188-125-1/2 and MIL-PRF-15733J, supporting HEMP-hardened facility and high-performance EMI/RFI protection applications and tested in accordance with MIL-STD-188-125-1/2 to withstand specified E1 Short Pulse and E2 Intermediate Pulse current injection levels under common-mode and line-to-ground conditions, with E1 residual current limited to ≤10 A and no damage to the filter during E2 testing.	12.08.2026 12:30:00	Aug	news_2026-09-15_15.jpg	\images\news_2026-09-15_15.jpg	https://emisglobal.com/product-category/military-grade-filters/	emisglobal.com
Silicone-free Thermal Conductive Paste	To compensate for even the smallest air pockets be...	13945	Product Release	Silicone-free Thermal Conductive Paste	To compensate for even the smallest air pockets between the contact pairs, Fischer Elektronik is expanding its product range of thermal interface materials to include a high-performance, silicone- and solvent-free thermal conductive paste. This thermal paste, with the product code WLPF 36 035, has a thermal conductivity of 3.6 W/m•K and is CRM-free; it is therefore not subject to any additional training requirements. The paste contains no metallic fillers, is electrically insulating and is claimed to offer high long-term stability with good creep properties. The WLPF 36 035 thermal grease can be used within a temperature range of -60 °C to +100 °C and is supplied in a 35 g tin. Other types and sizes of packaging can be produced to customer specifications on request.	11.08.2026 13:30:00	Aug	news_2026-09-01_15.jpg	\images\news_2026-09-01_15.jpg	https://www.fischerelektronik.de/en/latest-news/news/2026-fischer-pressemitteilungen/new-silicone-freehigh-performance-thermal-conductive-paste/	fischerelektronik.de
Manufacturing Facility in Guadalajara, Mexico, opened	Indium Corporation has opened a manufacturing faci...	13935	Industry News	Manufacturing Facility in Guadalajara, Mexico, opened	Indium Corporation has opened a manufacturing facility in Guadalajara, Mexico. This 1,230-square-meter facility will manufacture solder paste, cored wire, and wave flux products to support customers throughout the Americas and global markets. Production will initially focus on Indium Corporation’s best-selling paste series Indium8.9HF and Indium10.8HF. This marks the first phase of the company’s long-term manufacturing investment in Mexico, with more capabilities planned as the facility grows to meet customer demand. At full capacity, the Guadalajara facility is expected to produce approximately 18–20 metric tons of solder paste per month. In addition to manufacturing and operational roles, the site will house customer service and technical support teams.	11.08.2026 10:00:00	Aug	news_2026-09-01_5.jpg	\images\news_2026-09-01_5.jpg	https://www.indium.com/press-releases/indium-corporation-opens-new-manufacturing-facility-in-guadalajara-mexico-expanding-global-production-network/	indium.com
TVS Diodes for simplified ISO 7637 Load-Dump Protection	Littelfuse announced the TPSMD-FL Series FlatSuppr...	13941	Product Release	TVS Diodes for simplified ISO 7637 Load-Dump Protection	Littelfuse announced the TPSMD-FL Series FlatSuppressX™ TVS Diodes, a family of automotive-grade transient voltage suppression devices designed to simplify ISO 7637-2 Pulse 5b load-dump protection for 12 V vehicle electronics. Unlike conventional TVS diodes that can allow transient voltages to rise to levels requiring additional protection circuitry, the TPSMD-FL Series leverages proprietary FlatSuppressX™ technology to maintain a low, flat, and stable clamping voltage profile during high-energy transient events. This enables designers to meet demanding automotive load-dump requirements with lower clamping fewer external components, reducing design complexity and PCB space requirements. Rated for 3000 W peak pulse power dissipation and housed in a compact surface-mount DO-214AB package, the TPSMD-FL Series is optimized to protect sensitive automotive electronics from high-energy surges. The devices are AEC-Q101 qualified and designed specifically for applications requiring compliance with ISO 7637-2 Pulse 5b load-dump standards. They provide IEC 61000-4-2 ESD protection up to 30 kV air and contact discharge. The TPSMD-FL Series is suited for automotive applications operating on 12 V power rails.	11.08.2026 09:30:00	Aug	news_2026-09-01_11.jpg	\images\news_2026-09-01_11.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-tpsmd-fl-tvs-diodes-for-simplified-iso-7637-load-dump-protection	littelfuse.com
Quad-Channel Digital Isolators for High-Temperature Applications	Toshiba Electronics Europe has expanded its standa...	13927	Product Release	Quad-Channel Digital Isolators for High-Temperature Applications	Toshiba Electronics Europe has expanded its standard digital isolator line-up with the DCL54xx01A series, comprising ten quad-channel devices that support data rates of up to 150 Mbps and operate at temperatures up to 125 °C. Target industrial automation applications include programmable logic controllers (PLCs), I/O interfaces, motor control, inverters and switching power supplies. The DCL54xx01A series operates from 2.25 V to 5.5 V and provides an isolation voltage of 5000 V<sub>rms</sub> for one minute. Typical propagation delay is 10.9 ns, while typical pulse-width distortion is 0.8 ns. The devices are housed in an SOIC16-W package and operate from -40 °C to +125 °C, making them suitable for industrial systems in high-temperature environments. The series is available in 4:0, 3:1 and 2:2 forward/reverse channel-direction configurations. Devices are also available with different default output states and enable-control options.	06.08.2026 12:30:00	Aug	news_2026-08-15_12.jpg	\images\news_2026-08-15_12.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260806-1.html	toshiba.semicon-storage.com
Power Operational Amplifier Family	Apex Microtechnology released three precision powe...	13923	Product Release	Power Operational Amplifier Family	Apex Microtechnology released three precision power operational amplifiers - the PA167, PA168, and PA169 - delivering up to 20 % higher thermal performance than previous generations. The PA167 is a high-voltage MOSFET operational amplifier featuring a monolithic amplifier core designed for applications requiring high output voltage or output current density. Operating up to 205 V, the device delivers 1 A of continuous output current in the standard version and 2 A in the A-grade version, with up to 6 A peak current and 33 W of internal power dissipation. The PA168 operates up to 200 V with 8 A of continuous output current, 12 A peak current, and 52 W of internal power dissipation. Separate power supplies for the amplifier core and output stage allow designers to optimize voltage swing and overall system efficiency. The PA169 integrates two independent high-voltage amplifier channels into a 52-pin QFP package, delivering dual 200 V, 2 A continuous (6 A peak) amplifier channels with up to 52 W of internal power dissipation for applications requiring multiple high-performance amplifier channels in a single package. All three devices utilize Apex’s monolithic MOS technology and incorporate integrated protection features including temperature-compensated current limiting with over-current flag indication and amplifier disable functionality. Housed in a 20 mm × 20 mm PQ package, the devices are targeted towards applications like high-density voltage and current sources, electrostatic transducers, beam and mirror deflection systems, deformable mirror focusing, piezoelectric positioning, and other precision motion control applications.	06.08.2026 08:30:00	Aug	news_2026-08-15_8.jpg	\images\news_2026-08-15_8.jpg	https://www.apexanalog.com/press/product-news-pq-expansion.html	apexanalog.com
2200 V GaN Technology	Power Integrations announced that PowiGaN™ g...	13922	Product Release	2200 V GaN Technology	Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200 V, which is according to the company "far exceeding the voltage capabilities of all other commercially available GaN technologies". This positions PowiGaN well for high-voltage data centers, EVs, renewable energy and HVDC infrastructure as they leverage higher-voltage bus architectures in search of greater power density. GaN power switches are steadily supplanting silicon transistors in a wide range of power conversion applications thanks to their higher efficiency and switching frequencies. However, GaN technology must keep pace with data center, EV, renewables and HVDC infrastructure roadmaps calling for higher voltages and greater power density. Alternatives include lower-frequency silicon carbide or arrays of stacked, lower-voltage GaN devices. PowiGaN ICs rated at 1700 V are already being designed into single-stage data center auxiliary power applications, while 1250 V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800 V<sub>DC</sub> data centers. In addition to data centers other possible applications are e.g. EVs, photovoltaic inverters and battery-energy storage systems.	05.08.2026 07:30:00	Aug	news_2026-08-15_7.jpg	\images\news_2026-08-15_7.jpg	https://investors.power.com/news/news-details/2026/Power-Integrations-Demonstrates-Worlds-First-2200-V-GaN-Technology-for-Next-Era-High-Voltage-Power-Systems/default.aspx	power.com
Custom Magnetics Research and Development Center opened in Northern Germany	Bourns has opened a research, development, and des...	13932	Industry News	Custom Magnetics Research and Development Center opened in Northern Germany	Bourns has opened a research, development, and design center for its custom magnetics operations in Rosdorf near Göttingen/Germany. The facility brings together the full 44-person engineering, prototyping, and design team - the same group that has been developing custom magnetic components at this site since Bourns acquired Kaschke Components in 2021 - in a renovated 3,000-square-meter building. Production of inductive components continues at Bourns’ manufacturing sites in Tunisia. The move comes after Bourns wound down ferrite production at the team’s previous location, leaving it in a building that was too large for an engineering and design operation. Rather than adapt the old space, Bourns chose to start fresh. The center includes a prototype workshop with separate areas for measurement technology and qualification equipment - tools the engineering team needs to move from concept to tested design without leaving the building. After renovation there are now 17 offices where each engineer has a permanent desk, a soundproof booth for uninterrupted work, two meeting rooms, and a work café - all designed with the home office as the benchmark to beat. Heating and cooling come from a geothermal system feeding two heat pumps. Rainwater drains into a surrounding basin and two on-site ponds rather than the municipal system. Bourns also added electric vehicle charging stations for employees. All renovation work - interior fit-out, electrical, painting, fire safety - was handled by local companies based in the German federal state of Lower Saxony.	05.08.2026 07:00:00	Aug	news_2026-09-01_2.jpg	\images\news_2026-09-01_2.jpg	https://www.bourns.com/news/press-releases/pr/2026/08/05/bourns-opens-custom-magnetics-research-and-development-center-in-goettingen--germany	bourns.com
Silicon Photovoltaics Make Power Generation in Space More Cost-Effective	Source Energy and the Fraunhofer Institute for Sol...	13933	Industry News	Silicon Photovoltaics Make Power Generation in Space More Cost-Effective	Source Energy and the Fraunhofer Institute for Solar Energy Systems ISE have jointly developed a product line for space satellites based on silicon solar cells. The solar arrays use a special interconnection technology. Combined with inexpensive silicon solar cells, this enables modules at much lower costs compared to standard III-V technology currently dominating the space sector. The high cost and limited availability of solar cells based on III-V materials are major constraints for commercial missions, particularly Low Earth Orbit (LEO) satellites. The resulting solar modules are compact and lightweight: 64 g and 629 cm², (321 mm by 209 mm). The average power output of the prototypes was 15.6 W – with modules achieving 16.1 W – and an average active area efficiency of 18.8 % (AM0 at 25 °C). At 252 W/kg, the module’s specific power is competitive with other silicon modules in its class. The silicon solar cells are interconnected using shingle-matrix technology, where individual solar cells are cut into strips and arranged with certain overlap and spacing relative to one another, like brickwork. An electrically conductive adhesive bonds the solar cells together. The machine manufacturer M10 Solar Equipment GmbH has developed an industrial stringer for shingle-matrix technology. If the solar panel is damaged – for example, by a small meteorite or space debris – the matrix arrangement of the solar cells allows the current to simply flow around the damaged area. Rows and columns of solar cells in the layout can be flexibly adjusted depending on the satellite’s voltage and current requirements.	04.08.2026 08:00:00	Aug	news_2026-09-01_3.jpg	\images\news_2026-09-01_3.jpg	https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/silicon-photovoltaics-make-power-generation-in-space-more-cost-effective.html	ise.fraunhofer.de
Wide-Terminal Metal Foil Current Sense Resistors	Bourns announced the CFG-A Series Wide-Terminal Me...	13926	Product Release	Wide-Terminal Metal Foil Current Sense Resistors	Bourns announced the CFG-A Series Wide-Terminal Metal Foil Current Sense Resistors, available in 0508 and 0612 footprints. Rated up to 2 W (0612 footprint rated at 2 W at 70 °C; 0508 rated up to 1.5 W), and covering a resistance range of 1–30 mΩ, the CFG-A Series is AEC-Q200-compliant and designed for automotive power electronics, motor drives, and other high-reliability applications where accurate, thermally stable current measurement is required. Automotive electrification, spanning 12 V to 48 V mild-hybrid architectures and beyond, is raising current sensing accuracy requirements while simultaneously compressing available board space. This metal foil element in the CFG-A Series delivers a TCR down to ±50 ppm/°C for values ≥5 mΩ (model-dependent), maintaining measurement accuracy across the -55 °C to +155 °C operating range and better stability under sustained load. The wide-terminal geometry lowers thermal resistance from the resistive element to the PCB, reducing localized heating and improving long-term drift performance. Its value range spans from 1–10 mΩ (CFG0508A) and 1–30 mΩ (CFG0612A) with ±1% and ±5% tolerances.	03.08.2026 11:30:00	Aug	news_2026-08-15_11.jpg	\images\news_2026-08-15_11.jpg	https://www.bourns.com/news/press-releases/pr/2026/08/03/bourns-introduces-cfg-a-series-wide-terminal-metal-foil-current-sense-resistors-for-automotive-and-high-reliability-applications	bourns.com
President of Danfoss Power Electronics appointed	Danfoss Power has appointed Kern Jain as President...	13918	People	President of Danfoss Power Electronics appointed	Danfoss Power has appointed Kern Jain as President of Danfoss Power Electronics. He most recently served as Segment CFO of Danfoss Power Electronics and Drives and brings more than 20 years of experience in global technology and pharmaceutical companies. Mr. Jain has started in his new role as President of Danfoss Power Electronics on 1 August 2026. He succeeds Dominic Dorfner, who has left the company at his own request. Over the past months, the two worked closely together to ensure a smooth handover, allowing Jain to meet customers and colleagues ahead of his official start. The Danfoss business unit develops and markets power electronics products and solutions under the established Semikron Danfoss brand. The leadership transition coincides with the renaming of the business unit from Semikron Danfoss to Danfoss Power Electronics, reflecting being part of the Danfoss Group’s core electrification business. The established Semikron Danfoss brand will be retained for products and solutions. Within the Danfoss Group, the Power Electronics and Drives segment operates two distinct businesses: Danfoss Drives and Danfoss Power Electronics.	01.08.2026 07:00:00	Aug	news_2026-08-15_3.jpg	\images\news_2026-08-15_3.jpg	https://www.semikron-danfoss.com/about-semikron-danfoss/news-events/news/kern-jain-appointed-president-of-danfoss-power-electronics	semikron-danfoss.com
High-Voltage Power Supply for High-Precision Applications	DBK David + Baader has expanded its portfolio with...	13938	Product Release	High-Voltage Power Supply for High-Precision Applications	DBK David + Baader has expanded its portfolio with Vantys, a high-voltage power supply designed for high-precision measurement, analytical, and testing systems. Vantys targets applications where even the smallest deviations in output voltage can directly affect measurement accuracy, process stability, and system availability. The power supply features a fast and stable regulation, enabling rapid adaptation to changing operating conditions. At the same time, it offers integration flexibility through analog and digital interfaces as well as SCPI-compatible control. This simplifies integration into existing systems and reduces engineering effort. Typical applications include medical technology systems such as X-ray and CT equipment, as well as analytical and scientific applications including mass spectrometry and electron microscopy. The power supply is also suitable for security and inspection systems, such as X-ray screening equipment, and industrial processes utilizing ionization technology. In addition to precision and regulation performance, long-term system availability was a key development focus. With a design lifetime of at least 50,000 hours, a wear-free solid-state architecture, and integrated self-diagnostics and safe-state functions, Vantys helps reduce maintenance requirements and unplanned downtime. The system is based on a scalable architecture and can be configured for different voltage ranges. Development is carried out using automotive-grade components.	01.08.2026 06:30:00	Aug	news_2026-09-01_8.jpg	\images\news_2026-09-01_8.jpg	https://www.industrial-eu.dbk-group.com/all-products/high-voltage-power-supply-vantys	industrial-eu.dbk-group.com
"Engineer Social Hub": Engineers supporting Engineers	ROHM launched the English-language version of Engi...	13920	Industry News	"Engineer Social Hub": Engineers supporting Engineers	ROHM launched the English-language version of Engineer Social Hub, an online platform designed to make the company’s technical information, know-how, and support more accessible to engineers. Engineer Social Hub brings together ROHM’s technical content related to semiconductor products and solutions in one place. Through product-specific FAQs and discussions, as well as a chatbot, users can search for solutions to technical questions and obtain direct support from ROHM engineers. Previously, when users encountered technical challenges, they often needed to contact ROHM individually or make inquiries through distributors. Via the Engineer Social Hub, users can now access ROHM’s technical information and know-how online – anytime and from anywhere. FAQs and discussions on the site can be read and searched without logging in. If users are unable to find the information they need, they can register as members and post questions in discussions, enabling them to explore solutions in greater depth. The site also provides documents and videos explaining how to use Engineer Social Hub. Going forward, ROHM will continue to evolve Engineer Social Hub into a community in which not only ROHM and users, but also users themselves, can communicate with one another to generate new ideas and solutions. Through this initiative, ROHM aims to contribute to solving engineers’ technical challenges by creating a site where engineers connect, create, and collaborate.	30.07.2026 08:00:00	Jul	news_2026-08-15_5.png	\images\news_2026-08-15_5.png	https://www.rohm.com/news-detail?news-title=2026-07-30_news&defaultGroupId=false	rohm.com
Harnessing Leakage Inductance	Würth Elektronik is expanding its WE-MCRI product ...	13928	Product Release	Harnessing Leakage Inductance	Würth Elektronik is expanding its WE-MCRI product series with the 1090HL variant (HL = High Leakage), a coupled inductor specifically designed to improve the performance of SEPIC, ZETA and &Cacute;uk converters. This double choke takes an unconventional approach by deliberately harnessing leakage inductance, which is normally treated as a parasitic element in conventional designs. The coupled inductor enables more effective filtering for improved EMC performance with a far more compact design. By using the molded double choke, which measures 11 × 10 × 9 mm³, ripple current reduction can be achieved with a lower inductance value. Cost and space are reduced compared with using two separate inductors. This special component also requires a smaller AC coupling capacitor, without sacrificing efficiency while enabling a more compact design. As a molded coupled inductor, this component delivers temperature-stable and soft saturation performance.	29.07.2026 13:30:00	Jul	news_2026-08-15_13.jpg	\images\news_2026-08-15_13.jpg	https://www.we-online.com/en/news-center/press/press-releases?d=we-mcri-high-leakage	we-online.com
12 V Automotive eFuse supports Software-defined Vehicles	Infineon Technologies has expanded its automotive ...	13925	Product Release	12 V Automotive eFuse supports Software-defined Vehicles	Infineon Technologies has expanded its automotive power distribution portfolio with the SPOC™ Wire Guard BTS80009 SWPx 1ES, a 12 V automotive eFuse with SPI interface. As the first member of a smart power switch family, it combines a protected high-side switch with integrated I²t wire protection, software configurability, and advanced diagnosis. It is designed for new E/E architectures that support SDV concepts with over-the-air updates. The SPOC Wire Guard BTS80009 SWPx 1ES automotive eFuse provides failure isolation within µs as well as current sensing, avoiding overdimensioning of the wire diameter compared with traditional melting fusesFor permanently powered loads, the product features a dedicated idle mode with a power consumption of a few μA while maintaining full protection. Its 24-bit SPI interface is daisy-chain-capable. Supporting platform reuse across vehicle variants, the configuration and protection parameters can be adjusted in software for each variant. In addition, SPOC Wire Guard devices provide real-time status, pre-warning indicators, and other diagnostics. SPOC Wire Guard also addresses growing needs for features supporting ADAS and enables fail-operational capabilities for L2++ to L5. It is offered as a Safety Element out of Context (SEooC) for use in systems up to ASIL-D in accordance with ISO 26262, with an integrated non-volatile memory (NVM) to configure an application-specific safe state. It can autonomously react to supply-voltage drops caused by load faults to protect the supply and is available in four variants with a scalable feature set (A, I, P, and F) supporting currents up to 34.5 A.	29.07.2026 10:30:00	Jul	news_2026-08-15_10.jpg	\images\news_2026-08-15_10.jpg	https://www.infineon.com/technology-news/2026/inftn202607-124	infineon.com
Current Transducer with PPM-Class Precision	Danisense announced a high-precision DP12IP curren...	13921	Product Release	Current Transducer with PPM-Class Precision	Danisense announced a high-precision DP12IP current transducer designed for isolated DC and AC current measurement in demanding PCB-mounted power electronics applications. Based on the company’s closed-loop compensated fluxgate technology, the DP12IP series combines ppm-class accuracy with a maximum linearity error of 10 ppm and high long-term stability in a PCB-mount package featuring a form factor of 32 mm and weighing 250 g. This allows for integration into 1U power supplies and other space-constrained equipment. The transducer supports current measurement up to 18 A and accommodates measurement resistors up to 100 Ω at full scale. It uses fixed excitation frequency and second harmonic zero-flux detection for current measurement. Typical applications include magnet power supplies for particle accelerators, stable precision power supplies, precision servo drives for motion control, battery test benches, battery emulators, and power measurement and power analysis systems.	28.07.2026 06:30:00	Jul	news_2026-08-15_6.jpg	\images\news_2026-08-15_6.jpg	https://danisense.com/products/dp12ip/	danisense.com
Software for Three-Phase Power Analysis on MXO Series Oscilloscopes	Rohde & Schwarz has introduced the R&S MXO-K333 so...	13915	Product Release	Software for Three-Phase Power Analysis on MXO Series Oscilloscopes	Rohde & Schwarz has introduced the R&S MXO-K333 software option for three-phase power analysis on its MXO series oscilloscopes. The software adds in-depth measurement and analysis functions for testing and debugging three phase power systems, drives and inverters. Available for all four and eight channel models of the MXO 3, MXO 4, MXO 5 and 5C oscilloscopes, it supports the analysis of voltage and current signals in three-phase AC systems. This test solution keeps the captured waveforms visible during measurement, allowing engineers to review power values and check transient behavior in the same instrument. Other oscilloscope functions such as math, spectrum analysis, measurement tracking and zone trigger remain available for further analysis. A guided setup wizard assigns the oscilloscope channels to the voltage and current probes used for the three-phase analysis. It verifies the wiring and supports common two-wire, three-wire and four-wire configurations (2V2A, 3V3A and 3VN3A). After setup, the software provides cycle-by-cycle calculations for RMS values, power factor, active power, reactive power and total power. By defining the input and output configuration, users can also calculate the system’s three-phase efficiency. Additional analysis views include phasor display, harmonic analysis and THD measurements in line with IEC 61000-3-2 and MIL-STD-1399. As an oscilloscope-based solution, the R&S MXO-K333 enables engineers to correlate three-phase power results directly with the underlying voltage and current waveforms in real time. This is especially valuable during R&D and debugging, when power behavior often must be analyzed alongside switching events, transients, control signals and communication activity.	23.07.2026 15:30:00	Jul	news_2026-08-01_15.jpg	\images\news_2026-08-01_15.jpg	https://www.rohde-schwarz.com/uk/about-us/news-press/all-news/rohde-schwarz-presents-new-software-for-three-phase-power-analysis-on-mxo-series-oscilloscopes_229356-1642048.html?change_c=GB	rohde-schwarz.com
Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption	Navitas Semiconductor and Magnachip Semiconductor,...	13919	Industry News	Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption	Navitas Semiconductor and Magnachip Semiconductor, a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets. Under the terms of the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar™ (TAP) technology to enter the HV and UHV SiC markets. The license covers 1200 V, 2300 V, 3300 V and higher voltage GeneSiC technologies, enabling Magnachip to build on Navitas’ SiC device platforms for next-generation power conversion applications. Magnachip will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified, and internalized at Magnachip’s fab in South Korea. The companies expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems. The companies also stated that the agreement encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later.	23.07.2026 07:30:00	Jul	news_2026-08-15_4.jpg	\images\news_2026-08-15_4.jpg	https://www.navitassemi.com/en/press-releases/navitas-and-magnachip-announce-strategic-partnership-to-accelerate-high-voltage-and-ultra-high-voltage-silicon-carbide-adoption	navitassemi.com
High-Precision Power Analyzer	Yokogawa introduced the WT1500 power analyzer for ...	13924	Product Release	High-Precision Power Analyzer	Yokogawa introduced the WT1500 power analyzer for high-voltage, multi-functional measurement within the renewable energy and xEV markets as well as for semiconductor and battery applications. Operating with an input voltage of 2000 V<sub>DC</sub>, its four measurement channels fit within a 2U (approx. 88 mm), 19-inch chassis, making it suitable for the rack-mount and PC controlled test environments. Resolver signal input support enables engineers to conduct motor evaluation tests without needing additional equipment, while multi-unit synchronization capabilities will later allow up to 5 units to connect, for a maximum of 20 power channels. The WT1500 achieves a total power accuracy of ±0.038 % (DC, 50/60 Hz) and low-power-factor accuracy of ±0.07 % of S at 50/60 Hz and supports two types of input elements, High Voltage (HV) and Wide Bandwidth (WB). The HV element supports direct measurement up to 2000 V<sub>DC</sub> and 300 kHz, well-suited for high-voltage PCS and ESS applications. The WB element supports up to 1000 V with a 2 MHz bandwidth, crucial for measuring the complex, high-frequency waveforms generated in today’s xEV motors. Both inputs share a common sensor input and can be mixed in a single unit. The instrument supports four power measurements and four motor evaluations, including both encoder and resolver signal inputs, IEEE 1588 time synchronization, and data output to CAN/CAN-FD buses and low-latency data transmission via UDP communication. Featuring several interfaces for remote control via PC, external monitor or tablet up to five WT1500 units can be synchronized, enabling 20-channel power measurement.	22.07.2026 09:30:00	Jul	news_2026-08-15_9.jpg	\images\news_2026-08-15_9.jpg	https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-releases-wt1500-precision-power-analyzer/	tmi.yokogawa.com
AEC-Q101 compliant 40 V N-channel MOSFETs	Toshiba Electronics Europe has launched the XPJ1R5...	13907	Product Release	AEC-Q101 compliant 40 V N-channel MOSFETs	Toshiba Electronics Europe has launched the XPJ1R504PB, an automotive-compliant 40 V, 120 A N-channel power MOSFET housed in the S-TOGL™ package, expanding its lineup for 12 V systems. Target applications include inverters, semiconductor relays, load switches, and motor drives. By adding this 40 V MOSFET to its existing lineup in the S-TOGL package, which includes the XPJR6604PB and XPJ1R004PB, Toshiba has expanded its product options to meet a range of applications and performance requirements. The S-TOGL package employs gull wing leads that help relieve mounting stress, thereby improving the mechanical reliability of the soldered connections. In addition, the package features a post less structure that integrates the chip’s source-electrode connection and outer leads, thereby reducing parasitic resistance and achieving an on resistance (R<sub>DS(ON)</sub>) of 1.54 mΩ (max.) at a gate-source voltage (V<sub>GS</sub>) of 10 V. The use of a thick copper frame in the S-TOGL package lowers the transient thermal impedance between the channel and the case (Z<sub>th(ch-c)</sub>) to 0.76 K/W, reducing conduction loss and suppressing heat generation, thereby improving overall system efficiency. Furthermore, a multi-pin structure for the source leads enhances current distribution, enabling high current capability.	21.07.2026 07:30:00	Jul	news_2026-08-01_7.jpg	\images\news_2026-08-01_7.jpg	https://toshiba.semicon-storage.com/eu/company/news/2026/07/automotive-20260721-1.html	toshiba.semicon-storage.com
Strategic Acquisition increases Medium Voltage Expertise	Tamura Corporation has entered into a share transf...	13917	Industry News	Strategic Acquisition increases Medium Voltage Expertise	Tamura Corporation has entered into a share transfer agreement, through its subsidiary Tamura-Europe Limited, to acquire EMG Power Electric S.r.l. This strategic acquisition marks another important step in Tamura’s "One TAMURA for Next 100" Medium-Term Management Plan, strengthening the Group’s capabilities in medium-voltage power technologies and supporting growth in key markets including renewable energy, industrial electrification, AI-driven data centers and critical power infrastructure. Following the completion of the transaction, EMG will serve as the Tamura Group’s Global Center of Excellence for medium-voltage dry-type transformer technologies, supporting engineering development, manufacturing excellence and technology transfer across the Group’s worldwide operations. By combining EMG’s expertise with Tamura’s global engineering and manufacturing network across Japan, Europe, the United States, Mexico, China and Malaysia, the Group aims to strengthen its ability to deliver advanced power conversion solutions to customers worldwide.	21.07.2026 06:50:00	Jul	news_2026-08-15_2.png	\images\news_2026-08-15_2.png	https://www.tamuracorp.com/global/	tamuracorp.com
Family of 1200-2300 V SiC Power Modules	WeEn Semiconductors has launched a family of AC/DC...	13908	Product Release	Family of 1200-2300 V SiC Power Modules	WeEn Semiconductors has launched a family of AC/DC and DC/DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications. The semiconductors are available in an array of packages and with voltages ranging from 1200 to 2300 V, R<sub>DS(on)</sub> values as low as 1.5 mΩ and customer-specific configurations can also be created. Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kV<sub>AC</sub> to 800 V<sub>DC</sub> in a single stage. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T). Similarly, half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing.	20.07.2026 08:30:00	Jul	news_2026-08-01_8.jpg	\images\news_2026-08-01_8.jpg	https://www.ween-semi.com/about/news/technical-article/61	ween-semi.com