Bodo's WBG Expert Talk

Talk to the experts! Join my virtual roundtable, focused on wide bandgap technology. Our goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles we published in the magazine, giving you the chance to ask questions to the experts out of the industry.

My next session will take place on June 30th.
We will discuss SiC from 3:00 to 4:00 pm CEST and GaN from 4:30 to 5:30 pm.
Our platform of choice is ZOOM.

Free Registration

Don’t miss the current issue of the magazine – it is waiting for you in my archive!

Below you will find the articles that will be addressed in my upcoming expert talk. Please feel free to submit your question to the author by using the link in the description. He will then answer your question during the session. All questions will be forwarded to the companies. We will motivate the authors to give you a direct reply in case we received too many submissions and your specific question is unanswered yet.

Reliability Challenges of Automotive-grade Silicon Carbide Power MOSFETs
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Download the Article:
bp_article_1755.pdf
  • SiC
  • 2021-06-30 3:00

In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports mainly about trends, testing for wear of components, and testing for abnormal conditions. In summary, the main challenges are related to the cost of raw material, stable high-temperature operation, and high current density. However, the scenario is very dynamic and major changes are expected in the coming 2-3 years.

By Francesco Iannuzzo, Aalborg University, Denmark (ask-aalborguniversity@bodospower.com)

This article was published in our March 2021 issue.

How SiC MOSFETs Are Made and How They Work Best
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Download the Article:
bp_article_1747.pdf
  • SiC
  • 2021-06-30 3:00

Semiconductors came a long way since the early beginning of the minute man project and the traitorous eight puzzling about if better office air filtering would increase the yield of their production. In the more recent years there has been a big push into energy efficient conversion.

By Thomas Hauer, Avnet Silica (ask-avnetsilica@bodospower.com)

This article was published in our March 2021 issue.

How Silicon Carbide Is Improving Switched Power Converter Designs
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Download the Article:
bp_article_1753.pdf
  • SiC
  • 2021-06-30 3:00

When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during component selection. The introduction of 650 V SiC MOSFETs has made them more attractive for applications where they would not have previously been considered.

By René Mente, Senior Staff Engineer, Infineon Technologies (ask-infineon@bodospower.com)

This article was published in our March 2021 issue.

High-quality Power Semiconductor Modules now Support Lower Voltages
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Download the Article:
bp_article_1777.pdf
  • SiC
  • 2021-06-30 3:00

Hitachi ABB Power Grids Semiconductors is well known for its high-reliability power semiconductors that support medium and high voltage applications, including IGBT power semiconductors used in the main traction chain of rail rolling stock, press-pack devices used in HVDC (High Voltage Direct Current distribution) and other T&D (Transmission and Distribution) applications, as well as various power semiconductors used in industrial applications such as medium voltage drives. Building on its experience of highperformance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids is now strengthening its product portfolio with support for lower voltages.

By Tomáš Žlnay, Ladislav Radvan, Christian Winter, Roc Blumenthal, and Tobias Keller, Hitachi ABB Power Grids (ask-abb@bodospower.com)

This article was published in our May 2021 issue.

Extreme GaN - What Happens When eGaN FETs are Exposed to Voltage and Current Levels Well Above Data Sheet Limits
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Download the Article:
bp_article_1803.pdf
  • GaN
  • 2021-06-30 4:30

Recently, Efficient Power Conversion (EPC) did a series of tests to take eGaN FETs beyond their data sheet limits to quantify the effects of large amounts of overstress voltage and current and the results are published here for the first time.

By Robert Strittmatter, Alejandro Pozo, and Alex Lidow, Efficient Power Conversion (ask-epc@bodospower.com)

This article was published in our May 2021 issue.

Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality
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Download the Article:
bp_article_1776.pdf
  • GaN
  • 2021-06-30 4:30

Like Leonardo da Vinci (1452-1519) and his amazing inventions, including the ‘helicopter’ and ‘robotic knight’, electronics academics have long been frustrated that their ideas cannot become reality due to the limited materials available at the time. Leonardo would be amazed at today’s lightweight alloys and tiny, high-speed electric stepper motors compared to his rudimentary ironwork and waterpower. Now, old, slow, lossy silicon chips are consigned to history, as new, fast, efficient gallium nitride (GaN) power ICs turn academic dreams into industrial reality from mobile fast chargers to data center power supplies.

By Tom Ribarich and Stephen Oliver, Navitas Semiconductor (ask-navitas@bodospower.com)

This article was published in our May 2021 issue.

Efficient Power GaN Technology and Packaging Innovations Delivers a Winning Combination
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Download the Article:
bp_article_1797.pdf
  • GaN
  • 2021-06-30 4:30

Gallium nitride for power applications has moved out of the development phase and into the mainstream. No longer is it a niche ‘exotic’ technology to be discussed in esoteric papers at academic conferences, it is being used in many power applications and being designed in widely for volume growth.

By Dr. Dilder Chowdhury, Director, Strategic Marketing, Power GaN Technology at Nexperia (ask-nexperia@bodospower.com)

This article was published in our June 2021 issue.

Bulk Capacitor Optimization for Offline Power Supplies Using Galium Nitride-IC
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Download the Article:
bp_article_1791.pdf
  • GaN
  • 2021-06-30 4:30

The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented electronic markets. Gone are the days when travelers needed to carry separate adaptors for their laptops and cell phones. Aftermarket adaptor manufacturers are focusing their efforts on servicing this new market opportunity. The need for high efficiency, cost-effective solutions for higher power density has never been greater.

By Chris Lee, Product Manager, Power Integrations (ask-powerintegrations@bodospower.com)

This article was published in our June 2021 issue.