Silicon Carbide (SiC) Current Limiting Devices
A known justification for Electrical Protection is to prevent transitory event like lightning, EMI, short-circuit, as well as transitory power-up effects, from disturbing and possibly permanently damage impacted electronic systems.
By Dr Jean-Baptiste Fonder (FAE), Dr Dominique Tournier (CTO), Gonzalo Picun (BDM) and Laurent Martinez (Sales Mgr), CALY Technologies
(ask-caly@bodospower.com)
This article was published in our
July 2020
issue.
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Hard Paralleling SiC MOSFET Based Power Modules
Perhaps the most fundamental question concerning this topic is to ask why parallel modules? What is the advantage of paralleling 2 x 200A modules to make a 400A module, why not simply use a 400A part? On the commercial side, in the 1200V class, IGBT modules are available in multiple current ratings and packages up to 3600A.
By Andre Lenze, David Levett, Ziqing Zheng and Krzysztof Mainka, Infineon Technologies
(ask-infineon@bodospower.com)
This article was published in our
September 2020
issue.
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Near Chip-Scale WBG Half-Bridge
Near chip-scale Type IV μMaxPak enables higher power-density, lower inductance and lower thermal resistance, relative to benchmark Types, I & II μMaxPak, by a factor of two.
By Courtney R. Furnival, Founder, Semiconductor Packaging Solutions
(ask-furnival@bodospower.com)
This article was published in our
July 2021
issue.
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Comparing Quasi-Resonant and Active Clamp Flyback Topologies for 65W Wall Charger Applications Using GaN Technology
Wall chargers using power GaN devices offer many advantages such as high-power density, higher efficiency and low operating temperatures compared to silicon-based solutions. This article discusses comparative results of ACF and QRF topology-based, 65W wall chargers using a GaN-based solution.
By Harshit Soni and Rajesh Ghosh, Tagore Technology Inc.
(ask-tagore@bodospower.com)
This article was published in our
August 2021
issue.
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Why Motors Are Smaller, Faster and More Precise With GaN
With the growing adoption and increasing applications of GaN, Bodo Arlt has taken the opportunity to talk to EPC’s CEO and Co-Founder Alex Lidow to discuss what he believes is the next big market for this evolving technology.
By Bodo Arlt, Publishing Editor, Bodo’s Power Systems
(ask-epc@bodospower.com)
This article was published in our
September 2021
issue.
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How Lightweight 5G is Made Possible by GaN
With the launch of 5G, this next generation cellular network promises a trilogy of capabilities that will change how we approach wireless applications. Offering massive connectivity, tremendous throughput, and ultra-low latency, many applications will, at last, be able to ditch the wire.
By Giuseppe Bernacchia, Senior Principal Application Engineer and Moshe Domb, Director Application Engineering at Infineon Technologies
(ask-infineon@bodospower.com)
This article was published in our
September 2021
issue.
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GaN FETs Become the Technology of Choice for Audiophiles
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications. Mostly, designers are impressed by the increased efficiency and ower density that GaN delivers, which results in devices that have greater power capabilities than their silicon counterparts.
By Ilian Bonov, GaN International Product Marketing Engineer, Nexperia
(ask-nexperia@bodospower.com)
This article was published in our
September 2021
issue.
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