Bodo's WBG Expert Talk

Talk to the experts! Join my virtual roundtable, focused on wide bandgap technology. Our goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles we published in the magazine, giving you the chance to ask questions to the experts out of the industry.

If you are interested in participating as an expert, please plan your article for the magazine. We will then invite you to one of the upcoming rounds. Our aim is to give as many companies as possible this opportunity, as we are sure that a wide variety of contributions is of value to everyone. Different speakers will bring new perspectives and approaches.

My next session will take place on September 29th.
We will discuss SiC from 3:00 to 4:00 pm CEST and GaN from 4:30 to 5:30 pm.
Our platform of choice is ZOOM.

Free Registration

Don’t miss the current issue of the magazine – it is waiting for you in my archive!

Below you will find the articles that will be addressed in my upcoming expert talk. Please feel free to submit your question to the author by using the link in the description. He will then answer your question during the session. All questions will be forwarded to the companies. We will motivate the authors to give you a direct reply in case we received too many submissions and your specific question is unanswered yet.

Silicon Carbide (SiC) Current Limiting Devices
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Download the Article:
bp_article_1654.pdf
  • SiC
  • 2021-09-29 3:00

A known justification for Electrical Protection is to prevent transitory event like lightning, EMI, short-circuit, as well as transitory power-up effects, from disturbing and possibly permanently damage impacted electronic systems.

By Dr Jean-Baptiste Fonder (FAE), Dr Dominique Tournier (CTO), Gonzalo Picun (BDM) and Laurent Martinez (Sales Mgr), CALY Technologies (ask-caly@bodospower.com)

This article was published in our July 2020 issue.

Hard Paralleling SiC MOSFET Based Power Modules
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Download the Article:
bp_article_1678.pdf
  • SiC
  • 2021-09-29 3:00

Perhaps the most fundamental question concerning this topic is to ask why parallel modules? What is the advantage of paralleling 2 x 200A modules to make a 400A module, why not simply use a 400A part? On the commercial side, in the 1200V class, IGBT modules are available in multiple current ratings and packages up to 3600A.

By Andre Lenze, David Levett, Ziqing Zheng and Krzysztof Mainka, Infineon Technologies (ask-infineon@bodospower.com)

This article was published in our September 2020 issue.

Near Chip-Scale WBG Half-Bridge
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Download the Article:
bp_article_1815.pdf
  • SiC
  • 2021-09-29 3:00

Near chip-scale Type IV μMaxPak enables higher power-density, lower inductance and lower thermal resistance, relative to benchmark Types, I & II μMaxPak, by a factor of two.

By Courtney R. Furnival, Founder, Semiconductor Packaging Solutions (ask-furnival@bodospower.com)

This article was published in our July 2021 issue.

Comparing Quasi-Resonant and Active Clamp Flyback Topologies for 65W Wall Charger Applications Using GaN Technology
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Download the Article:
bp_article_1825.pdf
  • GaN
  • 2021-09-29 4:30

Wall chargers using power GaN devices offer many advantages such as high-power density, higher efficiency and low operating temperatures compared to silicon-based solutions. This article discusses comparative results of ACF and QRF topology-based, 65W wall chargers using a GaN-based solution.

By Harshit Soni and Rajesh Ghosh, Tagore Technology Inc. (ask-tagore@bodospower.com)

This article was published in our August 2021 issue.

Why Motors Are Smaller, Faster and More Precise With GaN
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Download the Article:
bp_article_1831.pdf
  • GaN
  • 2021-09-29 4:30

With the growing adoption and increasing applications of GaN, Bodo Arlt has taken the opportunity to talk to EPC’s CEO and Co-Founder Alex Lidow to discuss what he believes is the next big market for this evolving technology.

By Bodo Arlt, Publishing Editor, Bodo’s Power Systems (ask-epc@bodospower.com)

This article was published in our September 2021 issue.

How Lightweight 5G is Made Possible by GaN
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Download the Article:
bp_article_1835.pdf
  • GaN
  • 2021-09-29 4:30

With the launch of 5G, this next generation cellular network promises a trilogy of capabilities that will change how we approach wireless applications. Offering massive connectivity, tremendous throughput, and ultra-low latency, many applications will, at last, be able to ditch the wire.

By Giuseppe Bernacchia, Senior Principal Application Engineer and Moshe Domb, Director Application Engineering at Infineon Technologies (ask-infineon@bodospower.com)

This article was published in our September 2021 issue.

GaN FETs Become the Technology of Choice for Audiophiles
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Download the Article:
bp_article_1833.pdf
  • GaN
  • 2021-09-29 4:30

Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications. Mostly, designers are impressed by the increased efficiency and ower density that GaN delivers, which results in devices that have greater power capabilities than their silicon counterparts.

By Ilian Bonov, GaN International Product Marketing Engineer, Nexperia (ask-nexperia@bodospower.com)

This article was published in our September 2021 issue.