Advantages of 100V GaN in 48V Applications
In both consumer electronics and automotive electrification, we are in a cycle of “more” right now. For consumers, more videos, pictures, Insta-this, Snap-that are all driving data demands skyrocketing. In automotive, more features and functions are added every model cycle including entertainment peripherals, safety features, hybrid motion torque and additional and brighter LEDs. Providing “more” requires more power to be delivered. More power is typically constrained by size and/or weight restrictions. This is why a growing number of industries are moving to higher-voltage, 48V distribution versus conventional 12V distribution.
By Lei Kou, Power Electronics Applications Engineer, and Juncheng (Lucas) Lu, Applications Engineering Manager, GaN Systems
(ask-gansystems@bodospower.com)
This article was published in our
September 2020
issue.
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GaN Power Semiconductor Device Dynamic Characterization
As we’ve discussed in our last few articles, dynamic characterization of Silicon Carbide (SiC) power semiconductor devices poses a lot of design challenges to make repeatable and reliable double pulse test solutions. Gallium Nitride (GaN) power semiconductor field effect transistors (FET) present even more difficult challenges because of its higher frequency operation and multiple variations of technology. In this article, we discuss how we overcome the challenges associated with GaN FET dynamic characterization.
By Ryo Takeda, Bernhard Holzinger, Michael Zimmermann, and Mike Hawes, Keysight Technologies
(ask-keysight@bodospower.com)
This article was published in our
October 2020
issue.
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GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers
Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.
By John S. Glaser, Director of Applications Engineering, Efficient Power Conversion Corporation
(ask-epc@bodospower.com)
This article was published in our
November 2020
issue.
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GaN Transistor Eliminates EMC at Source
EMI problems are often the last major bottleneck at the end of product development. Modelling and first measurements help to reduce the risk, but especially when a compact design is required, there is little space for last-minute changes. As time scales slip, the prices of the components used increases in proportion to the desperation and pressure to get the unit to market.
By Nigel Springett, Ing Büro Springett
(ask-springett@bodospower.com)
This article was published in our
January 2021
issue.
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Unleashing GaN with High-Performance Gate Driving
GaN technology is a true enabler for power stages, today providing performance that was unthinkable in the previous decade. The maximum performance and benefits from GaN are obtained only when the gate driver matches the same degree of performance and innovation as the transistors. After many years of research and development, MinDCet has overcome the pitfalls in GaN gate driving by introducing the MDC901 gate driver.
By Mike Wens, CEO, Managing Director, MinDCet NV
(ask-mindcet@bodospower.com)
This article was published in our
February 2021
issue.
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Reducing Size, Noise, and Field Failures of Transportation APUs
Designers are finally able to extract disruptive system-level benefits of SiC technology to shrink the size, noise, and field failures of auxiliary power units (APUs) in transportation vehicles.
By Kevin Speer, Nitesh Satheesh, and Marc Rommerswinkel, Microchip Technology
(ask-microchip@bodospower.com)
This article was published in our
December 2020
issue.
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Coreless Transformers Isolate SiC Gate Drivers For EV & Industrial Applications
Along with requirements for higher voltage operation and greater efficiency, the latest EV and industrial power system trends push for greater integration and safety of power system devices. A key element in enabling these features are isolated gate drivers. Of the few methods of isolating a gate driver, the latest innovations of coreless transformer technology are paving the way for compact and efficient gate drivers for high voltage systems.
By Mitch van Ochten, Sr. Applications Engineer at ROHM USA
(ask-rohm@bodospower.com)
This article was published in our
December 2020
issue.
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Achieving Fast Switching with a High-Voltage Isolated Driver IC
Industrial systems have struggled in recent years with the need of high efficiency, combined with the need of more compact systems. This also influences the choice of the gate drivers associated to high speed switches, like Silicon Carbide (SiC) MOSFETs. STMicroelectronics has recently launched the STGAP2, a family of isolated gate drivers focused on the industrial power market. Its portfolio includes different isolation voltages and functionalities.
By Vladimir Scarpa, Jan Svetlik, and Michele Lauria, ST Microelectronics
(ask-stm@bodospower.com)
This article was published in our
December 2020
issue.
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1200 V Discrete SiC MOSFETs in a Comparison with the HighSpeed 3 IGBTs for Servo-Drive Systems
For applications like servo drives, size and weight are very important, however, cooling capability is limited. For this reason, discrete CoolSiC™ MOSFETs are the ideal solution for fulfilling these requirements and improving performance. The reduced losses allow for the implementation of a zero-maintenance fanless design. In addition, the motor and drive can be integrated, and therefore reduce the control cabinet size, and simplify cabling.
By Blaž Klobučar and Dr. Zhihui Yuan, Infineon Technologies AG, Austria
(ask-infineon@bodospower.com)
This article was published in our
January 2021
issue.
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750V Gen 4 SiC FETs Enable Higher Efficiency Power Designs
Silicon carbide adoption has accelerated dramatically in recent years, thanks to solid technological progress in the quality and performance of components, their availability, and the emergence of applications that benefit from that performance. UnitedSiC has pursued a strategy of continuous technological innovation, to deliver the lowest Rds(on) power components in the 650V-1200V range, built on the excellent characteristics and high yields of our proprietary SiC JFET technology.
By Anup Bhalla, V.P. Engineering, United Silicon Carbide Inc.
(ask-unitedsic@bodospower.com)
This article was published in our
January 2021
issue.
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